JP6423782B2 - 圧電薄膜共振器およびフィルタ - Google Patents
圧電薄膜共振器およびフィルタ Download PDFInfo
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- JP6423782B2 JP6423782B2 JP2015240563A JP2015240563A JP6423782B2 JP 6423782 B2 JP6423782 B2 JP 6423782B2 JP 2015240563 A JP2015240563 A JP 2015240563A JP 2015240563 A JP2015240563 A JP 2015240563A JP 6423782 B2 JP6423782 B2 JP 6423782B2
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- 239000010409 thin film Substances 0.000 title claims description 51
- 239000010408 film Substances 0.000 claims description 237
- 238000003780 insertion Methods 0.000 claims description 58
- 230000037431 insertion Effects 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 239000011800 void material Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 52
- 238000000034 method Methods 0.000 description 20
- 230000005540 biological transmission Effects 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
- 238000012986 modification Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
12 下部電極
14 圧電膜
14a 下部圧電膜
14b 上部圧電膜
16 上部電極
26 不連続部
28 挿入膜
30 空隙
31 音響反射膜
40 送信フィルタ
42 受信フィルタ
50 共振領域
52 外周領域
54 中央領域
Claims (8)
- 基板と、
前記基板上に設けられた下部電極および上部電極と、
前記上部電極と前記下部電極とが対向する共振領域内に少なくとも挟まれ、前記共振領域の中央である中央領域を囲む少なくとも一部の領域において、圧電膜に亀裂または空隙が設けられた前記圧電膜と、
を備え
前記亀裂または空隙は、前記下部電極の端部を起点に設けられ、前記中央領域を囲む他の領域には設けられておらず、
前記下部電極下に別の空隙が設けられ、
前記亀裂または空隙は、前記下部電極の端部と前記別の空隙の端部とが略一致した領域に設けられている圧電薄膜共振器。 - 前記亀裂または空隙は、前記上部電極が前記共振領域から引き出される領域に設けられている請求項1に記載の圧電薄膜共振器。
- 前記圧電膜中に挿入され、前記共振領域内の外周領域の少なくとも一部に設けられ、前記共振領域の中央領域には設けられていない挿入膜を備える請求項1または2記載の圧電薄膜共振器。
- 基板と、
前記基板上に設けられた下部電極および上部電極と、
前記上部電極と前記下部電極とが対向する共振領域内に少なくとも挟まれ、前記共振領域の中央である中央領域を囲む少なくとも一部の領域において、圧電膜に亀裂または空隙が設けられた前記圧電膜と、
前記圧電膜中に挿入され、前記共振領域内の外周領域の少なくとも一部に設けられ、前記共振領域の中央領域には設けられていない挿入膜と、
を備え
前記亀裂または空隙は、前記下部電極の端部を起点に設けられ、前記中央領域を囲む他の領域には設けられておらず、
前記亀裂または空隙は、前記挿入膜上および下に設けられた前記圧電膜に設けられている圧電薄膜共振器。 - 前記亀裂または空隙は、前記挿入膜下に設けられた前記圧電膜に設けられ、前記挿入膜上に設けられた前記圧電膜に設けられていない請求項3記載の圧電薄膜共振器。
- 前記亀裂または空隙の断面は下が広く上方が狭い請求項1から5のいずれか一項記載の圧電薄膜共振器。
- 前記挿入膜の音響インピーダンスは前記圧電膜より小さい請求項3から5のいずれか一項記載の圧電薄膜共振器。
- 請求項1から7のいずれか一項記載の圧電薄膜共振器を含むフィルタ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015240563A JP6423782B2 (ja) | 2015-12-09 | 2015-12-09 | 圧電薄膜共振器およびフィルタ |
US15/357,644 US10250218B2 (en) | 2015-12-09 | 2016-11-21 | Piezoelectric thin film resonator and filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2015240563A JP6423782B2 (ja) | 2015-12-09 | 2015-12-09 | 圧電薄膜共振器およびフィルタ |
Publications (2)
Publication Number | Publication Date |
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JP2017108288A JP2017108288A (ja) | 2017-06-15 |
JP6423782B2 true JP6423782B2 (ja) | 2018-11-14 |
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US (1) | US10250218B2 (ja) |
JP (1) | JP6423782B2 (ja) |
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JP6941981B2 (ja) * | 2017-06-27 | 2021-09-29 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
KR102418744B1 (ko) * | 2017-09-25 | 2022-07-08 | (주)와이솔 | 에어갭형 fbar 및 이의 제조방법 |
JP7017364B2 (ja) * | 2017-10-18 | 2022-02-08 | 太陽誘電株式会社 | ラダー型フィルタ、圧電薄膜共振器およびその製造方法 |
JP7116557B2 (ja) * | 2018-03-01 | 2022-08-10 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタ、デュプレクサおよび圧電薄膜共振器の製造方法 |
US11431318B2 (en) * | 2018-12-14 | 2022-08-30 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing thereof |
WO2023190697A1 (ja) * | 2022-03-31 | 2023-10-05 | 株式会社村田製作所 | 弾性波装置 |
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TWI365603B (en) | 2004-10-01 | 2012-06-01 | Avago Technologies Wireless Ip | A thin film bulk acoustic resonator with a mass loaded perimeter |
US7280007B2 (en) | 2004-11-15 | 2007-10-09 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Thin film bulk acoustic resonator with a mass loaded perimeter |
US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
EP1944866B1 (en) * | 2005-11-04 | 2011-12-28 | Murata Manufacturing Co., Ltd. | Piezoelectric thin film resonator |
JP5161698B2 (ja) * | 2008-08-08 | 2013-03-13 | 太陽誘電株式会社 | 圧電薄膜共振子及びこれを用いたフィルタあるいは分波器 |
US8692631B2 (en) * | 2009-10-12 | 2014-04-08 | Hao Zhang | Bulk acoustic wave resonator and method of fabricating same |
US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
JP6336712B2 (ja) | 2013-01-28 | 2018-06-06 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
JP6333540B2 (ja) | 2013-11-11 | 2018-05-30 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、及び分波器 |
-
2015
- 2015-12-09 JP JP2015240563A patent/JP6423782B2/ja active Active
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2016
- 2016-11-21 US US15/357,644 patent/US10250218B2/en active Active
Also Published As
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US20170170807A1 (en) | 2017-06-15 |
JP2017108288A (ja) | 2017-06-15 |
US10250218B2 (en) | 2019-04-02 |
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