JP6866350B2 - 基板を処理する装置及びシステム、及び基板をエッチングする方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims description 207
- 238000005530 etching Methods 0.000 title claims description 39
- 238000012545 processing Methods 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 33
- 239000007789 gas Substances 0.000 claims description 155
- 238000000605 extraction Methods 0.000 claims description 41
- 238000010884 ion-beam technique Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 40
- 150000002500 ions Chemical class 0.000 description 30
- 239000002356 single layer Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000376 reactant Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
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- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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Description
本願は、米国特許仮出願第62/202261号、2015年8月7日出願、発明の名称”Apparatus And Techniques To Treat Substrates Using Directional Plasma And Reactive Gas”に基づいて優先権を主張し、その全文を参照することによって本明細書に含める。
ここで、本発明の実施形態を、添付した図面を参照しながら以下により十分に説明し、図面中にはいくつかの実施形態を示す。本発明の主題は多数の異なる形態で具体化することができ、本明細書中に記載する実施形態に限定されるものと考えるべきでない。これらの実施形態は、本発明が完全で完成したものとなるように提供し、本発明の主題の範囲を当業者に十分に伝える。図面中では、全体を通して同様な番号は同様な要素を参照する。
Claims (12)
- 基板を処理する装置であって、
処理チャンバ内に配置された反応性ガス出口を有する反応性ガス源であって、該反応性ガス出口は第1反応性ガスを前記基板へ指向させる反応性ガス源と、
第1方向に沿って延びる抽出開口を有する抽出プレートを含むプラズマチャンバと、
前記基板を保持するように構成された基板ステージであって、前記処理チャンバ内に配置され、前記第1方向に直交する第2方向に沿って、前記反応性ガス源に対面する第1位置と前記抽出開口に対面する第2位置との間を移動可能である基板ステージと、
前記反応性ガス出口と前記抽出開口との間に配置されたガス流量リストリクターであって、少なくとも前記プラズマチャンバと前記基板との間に差動排気流路を規定するガス流量リストリクターとを具え、
前記反応性ガス源が第1反応性ガス源であり、前記装置が、前記第1反応性ガスを前記基板へ指向させる第2出口を有する第2反応性ガス源をさらに具え、前記プラズマチャンバが前記第1反応性ガス源と前記第2反応性ガス源との間に配置され、前記基板ステージが、前記第1位置と、前記第2位置と、前記第2反応性ガス源に対面する第3位置との間を順に移動可能である装置。 - 前記プラズマチャンバに結合された排気ポートと、該排気ポートに接続されたプラズマチャンバ・ポンプとをさらに具えている、請求項1に記載の装置。
- 前記処理チャンバに結合されて前記処理チャンバ内の気体を排気する処理チャンバ・ポンプをさらに具え、前記差動排気流路内の第1圧力が、前記抽出開口と前記基板ステージとの間の領域内の第2圧力よりも小さい、請求項1に記載の装置。
- 前記プラズマチャンバに結合されて、不活性ガスを前記プラズマチャンバへ供給するための不活性ガス源をさらに具えている、請求項1に記載の装置。
- 前記プラズマチャンバ内に、前記抽出開口に隣接して配置されたビーム遮断器をさらに具え、該ビーム遮断器は第1抽出開口及び第2抽出開口を規定する、請求項1に記載の装置。
- 前記抽出開口が、前記第1方向に沿った100mm〜400mmの幅、及び前記第2方向に沿った2mm〜30mmの長さを有する、請求項1に記載の装置。
- 基板を処理するシステムであって、
前記基板を収容する処理チャンバと、
第1方向に沿って延びる抽出開口を有する抽出プレートを含むプラズマチャンバと、
前記プラズマチャンバに結合された反応性ガス出口を有する反応性ガス源であって、該反応性ガス出口は第1反応性ガスを前記プラズマチャンバへ指向させる反応性ガス源と、
前記基板を保持するように構成された基板ステージであって、前記処理チャンバ内に配置され、前記第1方向に直交する第2方向に沿って移動可能な基板ステージと、
前記基板ステージ及び前記プラズマチャンバの少なくとも一方に接続されたバイアス電源であって、前記プラズマチャンバと前記基板ステージとの間にバイアスを発生するためのバイアス電源と、
前記反応性ガス出口及び前記バイアス電源に結合されたコントローラであって、前記反応性ガス出口を閉じるための閉信号を送信し、前記反応性ガス出口が閉じられる際に、前記プラズマチャンバに対して負のバイアスを前記基板ステージにかけるための負バイアス信号を送信するシンクロナイザを含むコントローラとを具え、
前記シンクロナイザが、開信号を前記反応性ガス出口へ送信し、前記反応性ガス出口が開く際に、前記プラズマチャンバに対して正のバイアスを前記基板にかけるための正バイアス信号を送信するシステム。 - 基板をエッチングする方法であって、
前記基板が処理チャンバ内に配置された際に、反応性ガスを前記基板へ指向させるステップであって、前記反応性ガス、及び前記基板の材料から成る第1生成物層が前記基板の外面上に形成されるステップと、
イオンビームをプラズマチャンバから抽出開口を通して抽出するステップであって、該イオンビームは前記基板の露光部分に衝突するステップと、
前記基板を保持する基板ステージを、走査方向に沿って、前記抽出開口に対して走査するステップとを含み、
前記露光部分内の前記第1生成物層を前記基板からエッチングし、前記イオンビームで露光されない前記基板の未露光部分内の前記第1生成物層は前記基板からエッチングせず、
前記反応性ガスを前記基板へ指向させるステップが、前記反応性ガスを、反応性ガス出口を通して前記プラズマチャンバ内へ送ることを含み、前記反応性ガスは、前記抽出開口を通って前記基板へ流れ、前記方法が、
前記反応性ガス出口へ開信号を送信し、前記反応性ガス出口が開く際に、前記プラズマチャンバに対して正のバイアスを前記基板にかけるための正バイアス信号を送信するステップと、
前記反応性ガス出口が閉じる際に、前記プラズマチャンバに対して負のバイアスを前記基板ステージにかけるための負バイアス信号を送信するステップと
をさらに含む方法。 - 前記イオンビームが、前記基板の平面に直交する方向に対して0でない入射角をなす、請求項8に記載の方法。
- 前記イオンビームが、前記走査方向に直交する第1方向に沿った長軸を有する、請求項8に記載の方法。
- 前記反応性ガスを指向させるステップが、
前記反応性ガスを、前記処理チャンバ内に配置された反応性ガス源から直接、前記基板へ指向させることを含み、前記反応性ガスを指向させる期間中に、前記基板は第1位置に配置され、前記イオンビームを指向させる期間中に、前記基板は第2位置に配置され、前記基板は、前記走査方向に沿って、前記第1位置と前記第2位置との間で走査される、請求項8に記載の方法。 - 前記反応性ガス出口と前記抽出開口との間にガス流量リストリクターを配置するステップであって、該ガス流量リストリクターは、少なくとも前記プラズマチャンバと前記基板との間に差動排気流路を規定するステップと、
前記反応性ガスを、前記差動排気流路を通して前記反応性ガス出口から排気するステップと
をさらに含む、請求項8に記載の方法。
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US201562202261P | 2015-08-07 | 2015-08-07 | |
US62/202,261 | 2015-08-07 | ||
US14/970,738 US9706634B2 (en) | 2015-08-07 | 2015-12-16 | Apparatus and techniques to treat substrates using directional plasma and reactive gas |
US14/970,738 | 2015-12-16 | ||
PCT/US2016/042497 WO2017027165A1 (en) | 2015-08-07 | 2016-07-15 | Apparatus and techniques to treat substrates using directional plasma and reactive gas |
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US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US10128082B2 (en) * | 2015-07-24 | 2018-11-13 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques to treat substrates using directional plasma and point of use chemistry |
US9865484B1 (en) * | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10141161B2 (en) * | 2016-09-12 | 2018-11-27 | Varian Semiconductor Equipment Associates, Inc. | Angle control for radicals and reactive neutral ion beams |
US10730082B2 (en) * | 2016-10-26 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for differential in situ cleaning |
TW202239270A (zh) * | 2017-10-30 | 2022-10-01 | 美商元平台技術有限公司 | 利用化學輔助反應離子束蝕刻製造傾斜表面浮雕結構的方法 |
US10684407B2 (en) | 2017-10-30 | 2020-06-16 | Facebook Technologies, Llc | Reactivity enhancement in ion beam etcher |
US10815570B2 (en) * | 2017-11-13 | 2020-10-27 | Denton Vacuum, L.L.C. | Linearized energetic radio-frequency plasma ion source |
EP3503159B1 (fr) * | 2017-12-20 | 2021-05-05 | The Swatch Group Research and Development Ltd | Procédé d'implantation d'ions sur une surface d'un objet à traiter |
US10845596B2 (en) | 2018-01-23 | 2020-11-24 | Facebook Technologies, Llc | Slanted surface relief grating for rainbow reduction in waveguide display |
US10761330B2 (en) | 2018-01-23 | 2020-09-01 | Facebook Technologies, Llc | Rainbow reduction in waveguide displays |
US10914954B2 (en) | 2018-08-03 | 2021-02-09 | Facebook Technologies, Llc | Rainbow reduction for waveguide displays |
US10649119B2 (en) | 2018-07-16 | 2020-05-12 | Facebook Technologies, Llc | Duty cycle, depth, and surface energy control in nano fabrication |
US11137536B2 (en) | 2018-07-26 | 2021-10-05 | Facebook Technologies, Llc | Bragg-like gratings on high refractive index material |
JP7203531B2 (ja) * | 2018-08-08 | 2023-01-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
KR20210042939A (ko) * | 2018-09-05 | 2021-04-20 | 도쿄엘렉트론가부시키가이샤 | 전자빔 매개 플라즈마 에칭 및 증착 공정을 위한 장치 및 공정 |
US10468226B1 (en) | 2018-09-21 | 2019-11-05 | Varian Semiconductor Equipment Associates, Inc. | Extraction apparatus and system for high throughput ion beam processing |
US11195703B2 (en) | 2018-12-07 | 2021-12-07 | Applied Materials, Inc. | Apparatus and techniques for angled etching using multielectrode extraction source |
US11640909B2 (en) * | 2018-12-14 | 2023-05-02 | Applied Materials, Inc. | Techniques and apparatus for unidirectional hole elongation using angled ion beams |
US11715621B2 (en) | 2018-12-17 | 2023-08-01 | Applied Materials, Inc. | Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions |
US11150394B2 (en) | 2019-01-31 | 2021-10-19 | Facebook Technologies, Llc | Duty cycle range increase for waveguide combiners |
US11391950B2 (en) | 2019-06-26 | 2022-07-19 | Meta Platforms Technologies, Llc | Techniques for controlling effective refractive index of gratings |
US11056319B2 (en) * | 2019-07-29 | 2021-07-06 | Applied Materials, Inc. | Apparatus and system having extraction assembly for wide angle ion beam |
JP2021048194A (ja) * | 2019-09-17 | 2021-03-25 | キオクシア株式会社 | エッチング装置およびエッチング方法 |
US11796922B2 (en) * | 2019-09-30 | 2023-10-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices |
US11043394B1 (en) * | 2019-12-18 | 2021-06-22 | Applied Materials, Inc. | Techniques and apparatus for selective shaping of mask features using angled beams |
CN113140458B (zh) * | 2020-01-17 | 2024-03-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
WO2021221675A1 (en) * | 2020-04-30 | 2021-11-04 | Hzo, Inc. | Atmospheric plasma systems, apparatuses and processes |
US11226446B2 (en) | 2020-05-06 | 2022-01-18 | Facebook Technologies, Llc | Hydrogen/nitrogen doping and chemically assisted etching of high refractive index gratings |
KR102396275B1 (ko) * | 2020-06-05 | 2022-05-09 | 성균관대학교산학협력단 | 반도체 발광소자 및 이의 제조 방법 |
US11495430B2 (en) | 2020-07-15 | 2022-11-08 | Applied Materials, Inc. | Tunable extraction assembly for wide angle ion beam |
US11361968B2 (en) * | 2020-08-26 | 2022-06-14 | Applied Materials, Inc. | Atomic layer deposition using a substrate scanning system |
US12014898B2 (en) * | 2021-09-27 | 2024-06-18 | Applied Materials, Inc. | Active temperature control for RF window in immersed antenna source |
KR102475299B1 (ko) * | 2021-10-29 | 2022-12-06 | 박준철 | 웨이퍼 스캔 방법 및 장치, 그리고 상기 장치에서 사용되는 플라즈마 노즐 및 챔버 |
US11930583B1 (en) * | 2022-09-08 | 2024-03-12 | Ali Kaddoura | Heat conditioning through deflection/reflection/absorption of electromagnetic waves |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0770513B2 (ja) * | 1985-05-13 | 1995-07-31 | 株式会社日立製作所 | エッチングの方法およびエッチング装置 |
JPH0478268U (ja) * | 1990-11-14 | 1992-07-08 | ||
JP4680333B2 (ja) * | 1998-12-28 | 2011-05-11 | 東京エレクトロンAt株式会社 | プラズマ処理方法、エッチング方法、プラズマ処理装置及びエッチング装置 |
WO2000041228A1 (fr) * | 1998-12-28 | 2000-07-13 | Tokyo Electron Yamanashi Limited | Procede de traitement au plasma |
KR20000044933A (ko) | 1998-12-30 | 2000-07-15 | 김영환 | 반도체 소자의 금속층 식각 방법 |
US6921722B2 (en) | 2000-05-30 | 2005-07-26 | Ebara Corporation | Coating, modification and etching of substrate surface with particle beam irradiation of the same |
US6407001B1 (en) | 2000-06-30 | 2002-06-18 | Intel Corporation | Focused ion beam etching of copper |
FR2842388B1 (fr) * | 2002-07-11 | 2004-09-24 | Cit Alcatel | Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance |
JP2006054334A (ja) * | 2004-08-12 | 2006-02-23 | Seiko Epson Corp | 半導体製造装置、スパッタリング装置、ドライエッチング装置及び半導体装置の製造方法 |
US20100330787A1 (en) | 2006-08-18 | 2010-12-30 | Piero Sferlazzo | Apparatus and method for ultra-shallow implantation in a semiconductor device |
US8603591B2 (en) * | 2009-04-03 | 2013-12-10 | Varian Semiconductor Ewuipment Associates, Inc. | Enhanced etch and deposition profile control using plasma sheath engineering |
US8101510B2 (en) * | 2009-04-03 | 2012-01-24 | Varian Semiconductor Equipment Associates, Inc. | Plasma processing apparatus |
US20110139748A1 (en) | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
KR20110098355A (ko) | 2010-02-26 | 2011-09-01 | 성균관대학교산학협력단 | 중성빔 식각 장치를 이용한 원자층 식각 방법 |
US8617411B2 (en) | 2011-07-20 | 2013-12-31 | Lam Research Corporation | Methods and apparatus for atomic layer etching |
US8633115B2 (en) | 2011-11-30 | 2014-01-21 | Applied Materials, Inc. | Methods for atomic layer etching |
DE112012005837T5 (de) * | 2012-03-30 | 2014-10-30 | Hitachi, Ltd. | Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung |
US8497486B1 (en) * | 2012-10-15 | 2013-07-30 | Varian Semiconductor Equipment Associates, Inc. | Ion source having a shutter assembly |
US9288889B2 (en) * | 2013-03-13 | 2016-03-15 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques for energetic neutral beam processing |
US9017526B2 (en) * | 2013-07-08 | 2015-04-28 | Lam Research Corporation | Ion beam etching system |
US9576810B2 (en) | 2013-10-03 | 2017-02-21 | Applied Materials, Inc. | Process for etching metal using a combination of plasma and solid state sources |
US9293301B2 (en) * | 2013-12-23 | 2016-03-22 | Varian Semiconductor Equipment Associates, Inc. | In situ control of ion angular distribution in a processing apparatus |
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