WO2021221675A1

WO2021221675A1 - Atmospheric plasma systems, apparatuses and processes

Info

Publication number: WO2021221675A1
Application number: PCT/US2020/030842
Authority: WO
Inventors: John Janik
Original assignee: Hzo, Inc.
Priority date: 2020-04-30
Filing date: 2020-04-30
Publication date: 2021-11-04

Abstract

An apparatus for applying atmospheric plasma includes a plasma generator, a pair of plates, a matching network and a transport. The plasma generator includes a power supply configured to provide high frequency electromagnetic waves to energize a plasma precursor fed into a plasma generation zone by a plasma precursor feed. The power supply is electrically connected to at least one plate to allow the creation of plasma between the plates. An impedance matching network is in electrical communication with, and positioned between, the power supply and at least one of the pair of plates. A transport is configured to transport an object through the plasma between the plates.

Description

ATMOSPHERIC PLASMA SYSTEMS, APPARATUSES AND PROCESSES

TECHNICAL FIELD

[0001] This disclosure relates generally to plasma processing without the need of a plasma reaction chamber. More specifically, this disclosure relates to using low temperature plasma in atmospheric conditions to perform a variety of processes such as cleaning, coating, and masking material removal, all within a single inline system.

BACKGROUND

[0002] Plasma processes are often used to clean surfaces by plasma etching or ashing. Plasma is also used alter the surface of materials to enhance adhesion of things like a coating to the material. Plasma also enhances the coating process through plasma-enhanced chemical vapor deposition (PECVD). Plasma is also be used in post coating processes to remove unwanted coating from particular parts of an item after the coating process is completed or to remove certain masking materials. Often all of these plasma processes are performed on the same item or object during the manufacturing process. This is especially true of items such as printed circuit boards, where the substrate is prepared with plasma surface adhesion enhancement, then coated with a polymer coating such as parylene using PECVD, and then subjected to a post-coating plasma ashing process to remove undesired coating or masking material. The problem with using plasma processing is that different processes require different plasmas and plasma conditions. Thus, each different plasma processing step requires its own plasma reaction chamber to retain the pressure needed for the processing step. The loading and unloading of items from multiple plasma reaction chambers increases the time and labor costs of the overall manufacturing process.

[0003] Atmospheric plasma processing does not require a plasma processing chamber. However, known atmospheric plasma processes use high temperature plasma. This is problematic for temperature-sensitive or environmentally-sensitive items such as printed circuit boards (PCBs) or printed circuit board assemblies (PCBAs). Additionally, atmospheric plasma processing often uses plasma created at low frequencies creating plasma with high ion activity that can damage the sensitive PCBs, PCBAs, or similarly sensitive items. Furthermore, atmospheric plasma is typically applied with a torch or pen- like device where an energy field is created within the torch or pen. Gas is blown through an energy field or plasma generation zone and the resulting plasma is blown out of the torch onto the item to be processed. To accomplish this, the gas flow must be under pressure or at high speed. The high pressure or speed application can also damage sensitive parts such as PCBs and PCBAs, not to mention the fact that increased speed and pressure often equate to increased plasma temperature, which as mentioned above, may be too harsh for environmentally-sensitive items.

[0004] Atmospheric plasma also suffers as a means to enhance plasma chemical vapor deposition coating processes, because the application of atmospheric plasma is dependent on the direction of the applicator which drastically increases the complexity of achieving an even coating. Additionally, it is difficult to coat opposite sides of an item simultaneously with known atmospheric plasma processes.

[0005] Embodiments of the present invention have been developed in response to problems and disadvantages associated with conventional plasma processing systems and apparatuses.

SUMMARY

[0006] A system, apparatus, and method are disclosed for atmospheric plasma processing of environmentally-sensitive objects. In one embodiment, the apparatus includes a plasma generator, a pair of plates, a matching network with tuning stubs, and a transport. The apparatus facilitates using atmospheric plasma to clean or prepare an item for coating, to coat the item, and/or for post-coating processes. Using embodiments of the present invention, these processes may be accomplished in a single process line.

[0007] The plasma generator may include a power supply and a precursor feed. In one embodiment, the power supply provides electromagnetic field or voltage field with waves having a frequency of greater than about 3 kHz. In another embodiment, the power supply provides electromagnetic waves having a frequency of between about 100 MHz and about 200 MHz. The power supply may be a radio frequency generator. The precursor feed may be configured to supply any precursor than can become a plasma when supplied with energy in the electromagnetic field. The precursor feed may supply a fluid or a solid. The fluid may be a gas or liquid. As used herein throughout, the term “gas” includes any of vapors, the gas phase of a liquid or solid, including without limitation atomized liquid, any gaseous species, and any liquids or solids suspended in any of the foregoing. As used herein throughout, the term “liquid” includes suspensions, emulsions, any liquid phase of a solid or fluid, any liquid species, or any gases or solids in any of the foregoing liquid forms. [0008] In one embodiment, the precursor feed is a gas supply configured to supply a variety of gases depending on the desired plasma application. For example, it may be desired to have a relatively inert plasma for a pre-coating cleaning or preparation step. In this embodiment, the gas supply could be configured to supply one or more of oxygen, argon, helium, and hydrogen, alone or as a mixture. These and other gases that might be used for surface activation or as a carrier gas in plasma-enhance chemical vapor deposition process. Where the apparatus is used to create plasma to enhance the chemical vapor deposition coating of an item, the gas supply gases may be configured to supply gas which will result in the generation of a plasma that could activate a surface of the item and facilitate the growth of desired polymers thereon.

[0009] The power supply and precursor feed may be configured and arranged such the power supply provides energy that ionizes plasma precursor supplied by the precursor feed into plasma within a desired plasma generation zone. The apparatus may include a pair of plates, one or more of which may be in electrical communication with the power supply. In one embodiment, the plasma is generated between parallel surfaces of the respective pair of plates such that the plasma generation zone is between two spaced plates.

[0010] The apparatus may also include a matching network positioned between the power supply and a plate. The other plate may be connected to ground. In another embodiment, the apparatus may include one or more power sources with a matching network positioned between the one or more power sources and each plate. This may allow electrical potential to oscillate between the plates providing plasma on both sides of an object to be coated between the plates, thus allowing the apparatus to coat both sides of an item substantially simultaneously. Thus, embodiments of the present invention may allow for a more uniform, a perhaps a more conformal coating.

[0011] The transport may be configured to transport an item to be processed using the atmospheric plasma through the plasma generation zone between the plates. In this way, the item can be processed without the harsh effects of a jet plasma, such as those emitted by pen- type devices.

[0012] A system for in-line processing using different atmospheric plasma processes may include one or more apparatuses, with each apparatus or multiple apparatuses performing a different plasma process in one inline system. In one embodiment, the system includes at least one apparatus for performing atmospheric plasma pre-coating treatments and atmospheric plasma enhanced coating. In one embodiment, a single transport may be used to pass an item or items between the plasma generation zones of one or more apparatuses during one or more of the pre-coating treatment or treatments, coating, or post coating treatment or treatments. This configuration allows for inline processing techniques and obviates the need to laboriously load and unload items into and out of various plasma treatment chambers. [0013] One or more apparatuses may form a plasma processing area. For example, a single apparatus may be used to pre-treat an item in a first plasma processing area. Multiple apparatuses may be used to provide multiple plasma enhanced chemical vapor deposition coats of one or more items. Several apparatuses may be used to apply coats of a particular material and these apparatuses may define a second plasma processing area, for example.

One or more apparatuses may be used to apply a second or third coat of a different material, and each of these may define a third or fourth plasma processing area. A post-coating process may include one or more apparatuses that define another plasma processing area. In other embodiments, a single processing step may contain multiple plasma processing areas.

[0014] In one embodiment, the system may include inhibitors for inhibiting a plasma processing element moving out of at least one plasma processing area. These inhibitors may include, by way of non-limiting example, vacuums, pumps, exhausts, vents, blowers, liquids, shields, gas flows, cold traps, containment devices, and the like. These inhibitors are configured to allow the use of multiple atmospheric plasma apparatuses in a single inline process.

[0015] A method of atmospheric plasma processing may include providing an apparatus or system described herein. The method may include the steps of generating a plasma with the apparatus or a plasma generator. The method may further include passing an item though the plasma. In one embodiment, this may include passing the item between the two electrodes of the apparatus. In another embodiment, the method may include oscillating an electrical potential between the two electrodes in a push/pull configuration to provide a substantially even coating on both sides of the item with one pass through the apparatus. In another embodiment, the method may include the step of passing an item or plurality of items through a plurality of separately created plasmas without removing the item or plurality of items from a plasma generation chamber. The method may also include the step of matching the impedance between a power supply and an electrode connection. The method may also include the step of inhibiting a plasma, a plasma formation product, and/or a plasma processing by-product and the like to at least one plasma processing area.

[0016] The described features, structures, advantages, and/or characteristics of the subject matter of the present disclosure may be combined in any suitable manner in one or more embodiments and/or implementations. In the following description, numerous specific details are provided to impart a thorough understanding of embodiments of the subject matter of the present disclosure. One skilled in the relevant art will recognize that the subject matter of the present disclosure may be practiced without one or more of the specific features, details, components, materials, and/or methods of a particular embodiment or implementation. In other instances, additional features and advantages may be recognized in certain embodiments and/or implementations that may not be present in all embodiments or implementations. Further, in some instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of the subject matter of the present disclosure. The features and advantages of the subject matter of the present disclosure will become more fully apparent from the following description and appended claims or may be learned by the practice of the subject matter as set forth hereinafter.

BRIEF DESCRIPTION OF THE DRAWINGS [0017] In order that the advantages of the subject matter may be more readily understood, a more particular description of the subject matter briefly described above will be rendered by reference to specific embodiments that are illustrated in the appended drawings. Understanding that these drawings depict only typical embodiments of the subject matter and are not therefore to be considered to be limiting of its scope, the subject matter will be described and explained with additional specificity and detail through the use of the drawings, in which:

[0018] Figure 1 is a schematic diagram of an atmospheric plasma apparatus with a matching network according to an exemplary embodiment;

[0019] Figure 2 is a schematic diagram of an atmospheric plasma apparatus with multiple matching networks according to an exemplary embodiment;

[0020] Figure 3 is a schematic diagram of an atmospheric plasma system with a plasma processing area according to an exemplary embodiment;

[0021] Figure 4 is a schematic diagram of an atmospheric plasma system with multiple plasma processing areas according to an exemplary embodiment; [0022] Figure 5 is a schematic block diagram of a method, according to an exemplary embodiment; and

[0023] Figure 6 is a schematic block diagram of an atmospheric plasma system according to an exemplary embodiment.

DETAILED DESCRIPTION

[0024] Embodiments of the disclosure will be described herein below with reference to the accompanying drawings. In the description of the drawings, similar reference numerals are used for similar elements. Specific details are given in the description to provide a thorough understanding of the embodiments. However, it will be understood by one of ordinary skill in the art that the embodiments may be practiced without these specific details. Various embodiments described herein may include additional or fewer units, devices, components, modules, etc. than are shown in the figures. Certain processes, structures, and techniques may be shown without unnecessary detail in order to avoid obscuring the embodiments. Likewise, some elements in the accompanying drawings are exaggerated, and each element, size or interval is not necessarily to scale.

[0025] The terms used in describing the various embodiments of the disclosure are for the purpose of describing particular embodiments and are not intended to limit the disclosure. As used herein, the singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. All of the terms used herein including technical or scientific terms have the same meanings as those generally understood by an ordinary skilled person in the related art unless they are defined otherwise. Terms defined in this disclosure should not be interpreted as excluding the embodiments of the disclosure. Additional term usage is described below to assist the reader in understanding the disclosure.

[0026] The terms "have," "may have," "include," and "may include" as used herein indicate the presence of corresponding features (for example, elements such as numerical values, functions, operations, or parts), and do not preclude the presence of additional features.

[0027] The word "exemplary" is used herein to mean "serving as an example or illustration." Any aspect or design described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other aspects or designs.

[0028] The terms "A or B," "at least one of A and B," "one or more of A and B", or “A and/or B” as used herein include all possible combinations of items enumerated with them. For example, use of these terms, with A and B representing different items, means: (1) including at least one A; (2) including at least one B; or (3) including both at least one A and at least one B. In addition, the articles "a" and "an" as used herein should generally be construed to mean "one or more" unless specified otherwise or clear from the context to be directed to a singular form.

[0029] Terms such as "first" and "second" are used herein to distinguish one component from another without limiting the components and do not necessarily reflect importance or an order of use. For example, a first component and a second component may indicate different components regardless of the order or importance. Additionally, reference to a “first” component in an embodiment need not necessarily require the existence of a “second” component in that embodiment.

[0030] It will be understood that, when two or more elements are described as being “coupled,” “connected,” “operatively coupled,” “in communication,” or “in operable communication,” with or to each other, the connection or communication may be direct, or there may be an intervening element between the two or more elements. To the contrary, it will be understood that when two or more elements are described as being "directly” coupled with or to another element or in "direct communication” with or to another element, there is no intervening element between the first two or more elements.

[0031] Furthermore, “connections” or “communication” between elements may be, without limitation, wired, wireless, electrical, mechanical, optical, chemical, electrochemical, comparative, by sensing, or in any other way two or more elements interact, communicate, or acknowledge each other. It will further be appreciated that elements may be “connected” with or to each other, or in “communication” with or to each other by way of local or remote processes, local or remote devices or systems, distributed devices or systems, or across local or area networks, telecommunication networks, the Internet, other data communication networks conforming to a variety of protocols, or combinations of any of these. Thus, by way of non-limiting example, units, components, modules, elements, devices and the like may be “connected’, or “communicate” with each other locally or remotely by means of a coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), shared chipset or wireless technologies such as infrared, radio, and microwave.

[0032] The expression “configured to” as used herein may be used interchangeably with “suitable for,” “having the capacity to,” “designed to,” “adapted to,” “made to,” or “capable of’ according to a context. The term “configured” does not necessarily mean “specifically designed to” in a hardware level. Instead, the expression “apparatus configured to . . may mean that the apparatus is “capable of . . along with other devices or parts in a certain context.

[0033] Reference throughout this specification to “one embodiment,” “an embodiment,” or similar language means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Appearances of the phrases “in one embodiment,” “in an embodiment,” and similar language throughout this specification may, but do not necessarily, all refer to the same embodiment. Similarly, the use of the term “implementation” means an implementation having a particular feature, structure, or characteristic described in connection with one or more embodiments of the present disclosure, however, absent an express correlation to indicate otherwise, an implementation may be associated with one or more embodiments. [0034] Reference throughout this specification to “atmospheric plasma,” “plasma in atmosphere,” or similar expressions refers to a plasma in which no reaction vessel is needed to ensure the maintenance of a pressure level differing from atmospheric pressure.

[0035] The term “plate” herein throughout means any conductor used to make electrical contact with some part of a circuit and may be used interchangeably herein throughout with the term “electrode.” Additionally, the term “pair of plates” is not limited to two plates or that each plate in a “pair of plates” need be similar. The terms “first plate” and/or a “second plate,” “plates,” or “pair of plates” include any one or more plates positioned relative to a similar or different one or more plates such that an electromagnetic field, energy field, or voltage field can be created between or around such plates. Accordingly, the term “pair of plates” means the minimum number of plates required to create an electromagnetic, energy, or voltage field that can energize matter to create plasma.

[0036] Similarly, references to “surfaces” or “opposing surfaces” of plates or pair of plates, need not be limited to a single surface of two opposing plates, but may include one or more surfaces of one or more plates, and/or one or more surfaces of one or more opposing plates.

[0037] “Plasma processing element” means anything created as a result of a plasma process. A “plasma processing element” includes, without limitation, plasma, plasma constituents, gas, gas constituents, plasma precursor materials, ash, material from the item or object received the processing, coating material, cleaning material, residues, remnants, reactants, reacted materials, contaminants, other resulting or leftover material from a plasma process, and the like.

[0038] The term “inhibiting” or “inhibit,” as used herein throughout is not meant to mean completely or totally containing, restricting, or controlling. As used herein throughout, for example, “inhibiting” or “to inhibit” a plasma processing element means not allowing the plasma processing element to move unimpeded. Accordingly, the term “inhibiting” or “to inhibit” a plasma processing element means utilizing any force to partially or fully impede the movement or flow of a plasma processing element and may be used synonymously with “urging,” “directing,” or otherwise “influencing” the movement of the plasma processing element.

[0039] It will be readily understood that the components of the embodiments as generally described herein and illustrated in the appended figures could be arranged and designed in a wide variety of different configurations. Thus, the following more detailed description of various embodiments, as represented in the figures, is not intended to limit the scope of the present disclosure but is merely representative of various embodiments. While the various aspects of the embodiments are presented in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

[0040] All or a portion of any embodiment disclosed herein may be utilized with all or a portion of any other embodiment, unless stated otherwise. Other aspects, as well as features and advantages of various aspects, of the disclosed subject matter will be apparent to those of ordinary skill in the art through consideration of this disclosure and the appended claims. [0041] Referring now to Figure 1, an apparatus 100 is shown for utilizing a plasma 102 in atmospheric conditions to clean, etch, ash, coat, treat, or perform a plasma process on an object 104. The apparatus 100 includes a plasma generator having a power supply 106 and a plasma precursor feed 108. The apparatus 100 includes a pair of plates 110 and 112, at least one of which is connected to, and in electrical communication with, the power supply 106. The plates 110, 112 in one embodiment may be capacitor plates, electrodes and/or grounded electrodes. The power supply 106 is configured to energize plasma precursor from the plasma precursor feed 108 to create the plasma 102 in a plasma generation zone 114 between the plates 110, 112. A transport 116 is configured to transport the object 104 through the plasma 102 between the plates 110 and 112. [0042] The power supply 106 is configured to provide power or energy to create and electromagnetic or voltage field between the plates 110 and 112. In one embodiment, the power supply provides power at a frequency of greater than about 3 kHz. In another embodiment, the power supply 106 provides power at a frequency of between about 40 kHz and about 400 MHz. In yet another embodiment, the power supply 106 provides power at a frequency of between about 100 MHz and about 200 MHz.

[0043] One or more of the plates 110 and 112 may serve as an electrode and/or a ground. In the embodiment of Figure 1, a first plate 110 is connected to, and in electronic communication with, the power supply 106. A second plate 112 is connected to ground. The power supply 106 provides power to the first plate 110 which creates an electromagnetic or voltage field between the first plate 110 and second plate 112. This field energizes a plasma precursor to create the plasma 102 in a plasma generation zone 114. In one embodiment, at least a portion of the plasma generation zone 114 is between the plates 110 and 112.

[0044] The plates 110 and 112 may each include a surface, 120 and 122 respectively, facing inwardly toward the plasma generation zone 114. The surfaces may include the points of contact between which energy waves pass to create the electromagnetic field. In one embodiment, the surfaces 120 and 122 oppose each other and are substantially parallel to one another 120, 122. The surfaces 120 and 122 may be spaced less than 600 millimeters from each other on average. In another embodiment, the surfaces 120 and 122 of the respective plates 110 and 112 may be spaced between about 50 millimeters and about 400 millimeters on average. In another embodiment, the surfaces 120 and 122 of the respective plates 110 and 112 may be spaced between about 100 millimeters and about 300 millimeters [0045] The surface of one or more of the plates 110 and 112 may be flat and may have a surface defined by a planar geometry that may include one or more of a rectangle, a square, a trapezoid, a polygon, a circle, an oval, a ellipses, a shape containing regularly or irregularly shaped curves, arcs, sectors, segments, or straight lines, a closed curve, or any other shape defining an area. In other embodiments, the surface, or a portion of the surface, of one or more of the plates 110 and 112 may not be completely flat but may be contoured and/or contain one or more curved, angled, or flat portions. Where the plates 120 and/or 122 are not flat, a planar cross-section of each surface 120 and 122 and/or plate 110 and 112 may have one or more areas defined by geometries as referenced in conjunction with flat surfaces above. In some embodiments, the surfaces 120 and 122 may be parallel, but not flat. In other embodiments, the surfaces 120 and 122 need not be parallel. In the embodiment of Figure 1, the surface 120 and 122 are substantially flat and parallel.

[0046] The plates 110 and/or 112 may be made of a variety of materials depending upon a variety of factors including without limitation, the plasma generation setup, the plasma application, and a desired characteristic of the plasma 102. In one embodiment, one of more of the plates 110, 112 may include one or more materials chosen from the group of copper, aluminum, stainless steel, tantalum, nickel, chromium, tin, niobium, zirconium, and carbon. The plates may have cooling systems to keep the plates under a certain predetermined temperature. In one embodiment, a water-cooling system is connected to the outer-grounded plate 112.

[0047] Additionally, it will be appreciated by those of skill in the art that the plates 110 and 112 may be utilized in a variety of configurations to provide the electromagnetic or voltage field in which the plasma 102 can be created. For example, the pair of plates 110, 112 in an apparatus 100 may be a single plate opposite multiple smaller plates. The pair of plates 110, 112 in an apparatus 100 may include one or more plates opposite the same or a different number of plates. In one embodiment, plate 110 includes the same size, shape, configuration, composition, and number of plates as plate 112. In another embodiment, plate 110 includes a different size, shape, configuration, composition and/or number of plates than plate 112. In some embodiments, the plates 110, 112 may be horizontal in arrangement. In some embodiments, the plates 110, 112 may be in vertical arrangement. Indeed, it is to be understood that the surfaces 120 and 122 may be parallel to one another in any orientation relative to the transport 116 and may be in any desirable orientation relative to the transport 116 without being parallel to one another.

[0048] The number, size, positioning, composition, and spacing of the pair of plates 110, 112, along with the configuration of the surfaces 120, 122 of the pair of plates 110, 112 and the geometries that define the surface area or a cross-section thereof, may be chosen to affect a particular characteristic of the plasma 102. These characteristics may be, by way of non limiting example, a size, a shape, a location, or an intensity of the plasma 102. Similarly, the spacing between opposing surfaces 120, 122 of the pair of plates 110, 112 may be chosen to optimize a plasma 102 or a plasma application, or to facilitate or optimize the passing of an object 102 between the pair of plates 110 and 112. [0049] It will be appreciated by those of skill in the art that at some frequencies, power is reflected from a plasma actuator, which in one embodiment is the pair of plates, back to the power supply 106. This power may not be contributing to plasma 102 formation, which may make the apparatus 100 less efficient. In order to transfer maximal power from a power supply 106 to a load (which in one embodiment is the first plate 110, the second plate 112 and/or the plasma 102), the load impedance may be transformed to match the internal resistance of the power supply 106. In one embodiment, this may be achieved using impedance matching networks 124. The matching may be accomplished using at least one tuning stub 126. In one embodiment, multiple tuning stubs 126 are used in one or more matching networks 124. It will be appreciated by those of skill in the art that one or more tuning stubs 126 may be configured in a variety of shapes and/or sizes to affect a desired impedance matching between a power supply 106 and a determined impedance range at the load and/or the point of plasma generation. Indeed, it is to be understood that a tuning stub 124 may be anything that transforms impedance along a power transmission line.

[0050] The power supply 106 may be connected to, and in electrical communication with, at least one plate 110, 112 through the matching network 124. Thus, in one embodiment, the impedance to be matched to the power supply impedance may be the impedance at the point of electrical connection (not shown) of the power transmission line to at least one of the plates 110, 112. This point of connection impedance may be measured using measuring devices or sensors known in the art that may be located at the connection point of the power transmission line to the one or more plates 110, 112.

[0051] In another embodiment, the impedance to be matched to the power supply 106 impedance may be the impedance of the plasma 102 itself. In one embodiment, the matching network 124 is tuned to minimize the amount of reflected power by matching the plasma density and power supply 106 output frequency to the negative capacitance of the plasma 102. In another embodiment, the matching network 124 is tuned or the tuning stubs sized based on a current and/or impedance range. In yet another embodiment, the combination of a high quality, low impedance transmission line of proper length with a properly sized matching network provides a desirable power transfer from power supply 106 to the plates 110, 112 that actuate the plasma 102 and/or to the plasma 102 itself.

[0052] When determining the impedance or other electrical parameters of the plasma 102, or connection point where the plasma 102 is generated, the particular apparatus 100, system, and/or plasma application need to be considered. Different power supplies 106, power termination line connection points (not shown) and plasma characteristics may have different impedances that may affect the tuning of certain matching networks 124. These considerations may include, without limitation, a vacuum or other localized pressure, a precursor or gas type, a precursor or gas purity, a power supply power level, a plate 110, 112 separation or offset, an plate 110, 112 size, length of transmission line between the power supply 106 and the plates 110 and/or 112, moving mechanical components inside the chamber such as the transport 116 described below, and the like. For example, the size of the plates 110 and/or 112 can affect capacitance which affects impedance at a connection point to the plates.

[0053] Because each apparatus 100 and/or plasma application by an apparatus 100 or system described below may be different, there may be changes in impedance from apparatus 100 to apparatus 100 and from plasma generation zone 114 to plasma generation zone 114. In addition, similar apparatuses 100 from the same production line performing the same plasm application may do so operating under different conditions, which may affect changes on the impedance applied at the load, be it the plates 110 and/or 112, and/or the plasma 102. Accordingly, in one embodiment, the impedance of a transmission line connection or parameters of the plasma used to determine a plasma impedance may be measured before, during and/or after plasma generation. The apparatus 100 and/or system discussed below may be configured to adjust to dynamic atmospheric, processing, apparatus and/or system conditions that could affect the impedance of a load and the matching of that impedance to the power source 106 impedance. In one embodiment, these adjustments are made automatically at the time variations in connection point impedance or plasma parameters are noted. By measuring connection point impedance and plasma electrical parameters associated with certain processes, plasma applications, apparatus configurations and/or system configurations, the user can use the embodiments described herein to customize certain plasma generation setups and matching networks for those setups or for particular processes and/or plasma applications. By continuing to monitor certain plasma characteristics, and fine tuning the matching networks 124 on the fly, a more uniform and consistent atmospheric plasma application may be achieved. In this way, atmospheric plasma may start to approximate the conformality desired with certain plasma coating processes. [0054] In order to determine the impedance of a given load at a given place or approximate it by algorithm, one embodiment of the present disclosure uses a variety of measuring devices (not shown) at one or more places in the apparatus 100 or system. In one embodiment, an electrical parameter of a plasma may be determined by using one or more of an impedance meter, a pulsed N2 laser, a current probe, a voltage probe, an X-ray detector, an optical diagnostic reader, a Langmuir probe, a directional coupler, a Schottky power detector and other sensors and measuring devices that may be used to determine electrical parameters of a plasma 102. These and other measuring devices or sensors may be utilized in, at, or along the transmission line, the power supply 106, the matching network 124, the tuning stubs 126, at, near, and/or between the plates 110, 112, and other places where electrical parameter data may be measured. The data gathered from these and other measuring devices may be used to tune, retune, or fine tune the matching networks 124 and facilitate the maximization of power for atmospheric plasma generation.

[0055] It is to be understood that there are many different designs of matching networks 124 for different impedance and power levels. In one embodiment, the matching network 124 is configured to convert the impedance at the plates 110 and/or 112, so that the power going forward from, or downstream from, the power supply 106 into the plasma generation zone 114, sees a desired load impedance that has been predetermined through system configuration and/or prior applications or estimated by algorithms using previously known or measured data. In one embodiment, the power going forward to energize a plasma precursor into plasma is greater than or equal to 50 ohms.

[0056] Thus, embodiments of the present disclosure may make the overall plasma generation process more efficient and more cost-effective. Additionally, by efficiently using and/or maximizing the power being utilized to create the atmospheric plasma 102, the plasma 102 generated between the plates 110 and 112 may resonate longer allowing for a larger process windo to utilize the atmospheric plasma 102. Tills also may provide overall cost savings.

[0057] The plasma precursor feed 108 may be configured to feed a plasma precursor into the plasma generation zone 114. This may be accomplished through one or more precursor feed paths 130. The precursor feed paths 130 may be configured within an interior 132 or body 132 of the one or more plates 110, 112. In one embodiment, the precursor feed paths 130 are configured to supply plasma precursor substantially evenly across a length of the plasma generation zone 114. In other embodiments, the plasma precursor feed 108 and/or precursor feed paths 130 may be configured to apply or direct plasma 102 to particular portions of the plasma generation zone 114 through which the object 104 may pass during a processing step such as etching, ashing, plasma-enhanced chemical vapor deposition, post processing masking material removal and the like.

[0058] In another embodiment, the plasma precursor feed 108 includes a directional apparatus (not shown) to facilitate the position, shape or a characteristic of the plasma generation zone 114 or the application of the plasma 102 to the object 104. The directional apparatus may be a nozzle, orifice, valve or other apparatus known in the art to direct a fluid flow.

[0059] The precursor feed 108 may be configured to supply a liquid or a solid such as a parylene dimer. The precursor feedl08 may be configured to gasify or atomize the liquid or solid when needed to form a plasma with certain desired characteristics. In one embodiment, the precursor feed 108 is configured to vaporize a plasma precursor. In other embodiment, the precursor feed 108 is configured to pyrolyze a plasma precursor. The plasma precursor feed 108 may include means to process the plasma precursor before introducing the plasma precursor into the plasma generation zone 114. By way of non-limiting example, these plasma precursor processing steps may include vaporization and/or pyrolysis. In other embodiments, the plasma precursor feed 108 may receive a plasma precursor that has already undergone one or more processing steps. In these embodiments, the plasma precursor feed 108 may simply be responsible for the task of providing the processed plasma precursor to the plasma generation zone 114. Thus, the plasma precursor feed 108 may be configured to process plasma precursor or receive unprocessed, partially processed, or fully processed plasma precursor. The plasma precursor feed 108 may then further process the received plasma precursor and pass it along to the plasma generation zone or just pass the received plasma precursor along to the plasma generation zone 114. The plasma precursor feed is configured to provide a plasma precursor for ionization, activation, and/or to be energized by an electromagnetic field produced between the plates 110, 112 by the power supply 106. Accordingly, the apparatus 100 and systems of the present disclosure can take solid material such as granular parylene, vaporize it in a sublimation step, pyrolyze it to create a monomer, and use that monomer to create a parylene polymer coating on an object or item through plasma enhanced chemical vapor deposition at atmosphere. [0060] In one embodiment, the plasma precursor is a gas and the plasma precursor feed 108 is a gas supply. Accordingly, in some embodiments, the term “plasma precursor feed” 108 may be used interchangeably with “gas supply” 108. It will be appreciated by those of skill in the art that the choice of source gas depends on the thermal stability of the substrate. Depending on the plasma process, and the desired utilization of the plasma, a variety of gas precursors may be used. For example, if the plasma process is an ashing process to remove coatings or other materials from a substrate, the precursor gas may include, without limitation, one or more of CO2, CF4, C3F6, C4F8, CH3F, S1F4 SF₆, Ar, O2, and ¾ in any number of mixtures or concentrations. If the plasma process is plasma enhanced chemical vapor deposition, the gas precursor will depend in part on the coating being deposited. In various plasma processes, one or more of silane (S1H4), dichlorosilane (S1CI2H2), trichlorosilane (SiHCb), tetraethylorthosilicate SiiC^lfcU), nitrous oxide (N2O), ammonia (NH4), and nitrogen (N2) may be used as reactant gases. Argon (Ar), Oxygen (O2₎, Helium (He), and Hydrogen (¾) may also be used as a carrier gas and/or a dilutant gas to prevent undesirable gas-phase reactions. Silicon and oxygen precursor gases are often used in plasma processing such as plasma-enhanced chemical vapor deposition.

[0061] It will be appreciated by those of skill in the art that one or more power supplies 106, one or more plasma precursor feeds 108, and/or one or more matching networks 124 may be operably arranged and connected in a number of various configurations to create a desired plasma 102 with desired characteristics in a desired location.

[0062] In one embodiment, the apparatus 100 may include one or more devices 134 to control a process condition, collect a material such as a process remnant and/or byproduct, sanitize an area, purify an area, urge or direct material to an area, pull or suck material to an area, combinations of the forgoing, and the like. These devices 134 may include, by way of non-limiting example, vacuums, pumps, exhausts, vents, blowers, fluid flows, traps, containment devices, and the like.

[0063] In one embodiment, one or more devices 134 may include a vacuum to clean out an area prior to a plasma atmospheric process. The device or devices 134 may also be used during or after a process to capture remnants, residues, byproducts, unreacted material, or other plasma process elements, plasma reactants, plasma constituents, plasma processing byproducts, and the like. For example, when atmospheric plasma is used in an etching process, it may be desirable to collect or remove etched material during the process to make ongoing or deeper etching more efficient or viable. Suspended coating material may need to be removed, collected or confined at a certain point in an enhanced plasma chemical vapor deposition process to avoid coating equipment, devices, parts of the object, other items, and the like. These devices 134 may be used to rinse or pump out material, atmospheric process elements, or contaminants prior to, during, or after a particular processing step. In one embodiment, the device 134 may be one or more of a turbomolecular pump, a turbo pump and a rotary pump.

[0064] The devices 134 may be used to control a process condition such as, by way of non-limiting example, a temperature, humidity, a plasma reaction rate, a plasma position, a deposition time, a flow rate, an air quality, a purity level, a particulate level, combinations of the foregoing, and the like. The devices 134 may also be used to collect or sample an area to test or determine condition which may be used to adjust a process or apparatus 100 or system configuration, including without limitation, the plasma generation process or plasma processing element inhibition process.

[0065] In one embodiment, the devices 134 may work in connection with openings 138 in a plenum 136 having a first plenum wall 136a and a second plenum wall 136b. The devices 134 may inhibit plasma processing elements through openings 138 in the plenum walls 136a, 136b. The devices 134 may force air, gas, liquids or other fluids or items though the openings 138 to facilitate the control or collection of certain plasma processing elements. The openings 138 may act like vents through which a process condition or atmospheric content may be monitored, controlled, or otherwise affected. In one embodiment, heat or coolant may be applied through the openings 138. In another example, the openings 138 may be access portals through which equipment may be placed to measure a process condition, a plasma characteristic, including without limitation, a plasma electrical parameter used to tune the matching network 124, or measure the amount or concentration of a plasma process element. [0066] In one embodiment, the first plenum wall 136a may be even, colinear or parallel with one or more surfaces 120, 122 of a plate 110 or 112. In this configuration, atmospheric plasma applications performed by the apparatus 100 can be relatively confined to a smaller place, where a plasma process, plasma processing elements, and plasma processing conditions might be better controlled, for example.

[0067] The apparatus 100 also may include a transport 116. The transport 116 may be any device or system used to carry, control, or move an object 104 within or through a plasma generation zone 114. Accordingly, the transport 116 is configured to move an object 104 between two or more plates 110, 112 and through the plasma 102 generated there between. The transport 116 may be a belt or system of belts upon which the object 104 rests. In other embodiments, the transport 116 may include one or more cradles suspended by one or more cables or wires. In yet other embodiments, one or more posts with one or more holding mechanisms may be connected to a drive shaft to move an object 104 between plates 110,

112 and through a plasma generation zone 114. The belts, cradles, holding mechanisms or other devices for holding or transporting an object 104 within a plasma 102, may be configured with openings or accesses to allow the generated plasma 102 to interact with multiple sides or portions of the object 104 while on or attached to the transport 116.

[0068] In one embodiment, the transport 116 may include multiple sections. Each section may be separately controlled such that a first object 104 may be able to pass through a particular apparatus 100 within a system (described below) multiple times without affecting the motion or movement of a second object (not shown) through another apparatus (not shown) on the same transport 116 that is part of the same production line in the same system. The apparatus 100 or system may be configured to automatically pass one or more objects 104 between multiple sections of the system with the same or different transport 116 configurations.

[0069] Referring now to Figure 2, one embodiment of an apparatus 200 is shown for utilizing atmospheric plasma 202 in plasma operations such that the need for labor or systems to insert and remove objects 204 from a sealed chamber may be substantially obviated. The apparatus 200 includes a first plasma generator having a first power supply 206a and a first plasma precursor feed in the form of a gas supply 208a. The apparatus 200 also includes a second plasma generator having a second power supply 206b and a second plasma precursor feed in the form of a gas supply 208b. The apparatus 200 includes two or more plates or plate configurations 210 and 212, at least one of which is connected to, and in electrical communication with, the first power supply 206a, and at least one other of which is connected to, and in electrical communication with, the second power supply 206b.

[0070] In the embodiment of Figure 2, each power supply 206a and 206b is connected to, and in electrical communication with, at least one plate 210 or 212 through a respective matching network 224a and 224b. A first matching network 224a may be configured to facilitate the matching of an impedance of the first power supply 206a with a desired impedance range of a load. The load in one embodiment may be an electrical connection (not shown) at a plate 210 or the plasma 202a, 202b itself. The first matching network 224a may be positioned between the first power supply 206a and a plate 210. A second matching network 224b may be configured to facilitate the matching of an impedance of the second power supply 206b with a desired impedance range at a load. The load here may also be an electrical connection (not shown) at a plate 212 or at the plasma 202a, 202b itself. The second matching network may be positioned between the second power supply 206b and a plate 212. Each of the first and second matching networks 224a and 224b may accomplish the impedance matching using at least one tuning stub 226. In one embodiment, multiple tuning stubs 226 are used.

[0071] In one embodiment, a first matching system 224a is configured to match the impedance of a first power supply 206a with the predetermined/pre-estimated or on the fly determination/estimation of the impedance of a first plasma portion 202a. Similarly, in another embodiment, a second matching system 224b is configured to match the impedance of a second power supply 206b with the predetermined/pre-estimated or on the fly determination/estimation of the impedance of a second plasma portion 202b. The dual power supplies allow for oscillation between the plates 210 and 212 creating two portions of the plasma 202a and 202b. It will be appreciated that this provides better control over plasma application processes and may increase uniformity and conformality of plasma coatings. [0072] The power supplies 206a and 206b are configured to energize plasma precursors to create respective plasmas 202a and 202b or a single plasma having plasma portions 202a and 202b in a plasma generation zone 214. The plasma precursor may be an individual gas or combination of gases know for use in plasma applications. The gas may be applied to the plasma generation zone 214 through one or more precursor gas feed paths 230. The precursor gas feed paths 230 may be configured within an interior 232 or body 232 of the one or more plates 210, 212 or plate configurations 210, 212. The feed paths 230 may include directors, valves, nozzles, or other apparatus to direct the generation or application of the plasma 202a, 202b, 202 or a characteristic of the plasma 202a, 202b, 202 as described above.

[0073] In one embodiment, the plasma generation zone 214 is between the plate configurations 210 and 212 and particularly between opposing surfaces 220 and 222 of said plate configurations 210 and 212. A transport 216 is configured to transport the object 204 through the plasmas 202a and 202b, which in one embodiment can be a single combined plasma 202. The transport 216 is configured to move the object 204 between the plates or plate configurations 210 and 212 as described above.

[0074] The power supplies 206a and 206b may be configured to provide electromagnetic or voltage fields between respective surfaces 220 and 222 of plates 210, 212 or plate configurations 210, 212 in one or more of the ways discussed in conjunction with Figure 1. In one embodiment, the electromagnetic field generated by at least one of the power supplies 206a and 206b are created using frequencies in the radio frequency range.

[0075] The surfaces 220 and 222 of one or more plates 210 and 212 may be configured in any of the configurations described herein or in any other way that promotes the generation of plasma 202a, 202b, or 202. Similarly, the plates 210, 212 and/or the respective surfaces 220 and 222, may be spaced in a manner to optimize the generation of plasma 202a, 202b, or 202 for a giving atmospheric plasma application.

[0076] The apparatus 200 may include one or more devices 234 to control a process condition, test an area or condition, collect a material such as a process remnant and/or byproduct, sanitize an area, purify an area, urge or direct material to an area, pull or suck material to an area, combinations of the forgoing, and the like. These devices 234 may include, by way of non-limiting example, vacuums, pumps, exhausts, vents, blowers, fluid flows, traps, containment devices, and the like and may be used as with the embodiment described in conjunction with Figure 1. The devices 234 may work in connection with openings 238 in a plenum 236 having a first plenum wall 236a and a second plenum wall 236b. The devices 234 may extract plasma processing elements through openings 238 in the plenum walls 236a, 236b. The devices 234 may force air, gas, liquids or other fluids or items though the openings 238 to facilitate the control or collection of certain plasma processing elements. The openings 238 may act like vents through which a process condition may be monitored, controlled, or affected. The openings 238 may facilitate the interaction and coordination of the plasma generator, the plasma inhibitors (described below) and the transport 216.

[0077] The transport 216 may be any device or system used to hold, maintain or move an object 204 within or through a plasma generation zone 214 and/or between two or more plates 210, 212. The transport 216 may be of the same or similar configuration at the transport of the embodiment described in conjunction with Figure 1 and may have the same or similar functionality. [0078] Turning now to Figure 3, an atmospheric plasma system 300 includes a plurality of plasma apparatuses 302a, 302b positioned within a plenum 304. In one embodiment, the apparatuses 302a, 302b may be of the type described herein. The apparatuses 302a, 302b are configured to provide electromagnetic fields between respective pairs of plates 310a, 312a and 310b, 312b to energize a plasma precursor and create a plasmas 316a, 316b in respective plasma generation zones 314a, 314b. In one embodiment, at least a portion of the plasma generation zones 314a, 314b, are between the respective pairs of plates 310a, 312a and 310b, 312b. In one embodiment one or more power supplies of the apparatuses 302 of the system 300 are configured to generate electromagnetic fields using power at a frequency of greater than about 3 kHz.

[0079] The system includes a transport 306 to move an item 308. The transport 306 may be of a type described in conjunction with Figures 1 and 2. The transport 306 may be configured to transport an object 308 through the plasma 312a and 312b generated between the plates 310a, 312a and 310b, 312b of a plurality of atmospheric plasma apparatuses 302a, 302b. The transport 306 may be configured to more forward or backward or to stop or pause for a duration of time to optimize the utilization of atmospheric plasma for a particular application. For example, the transport 306 may pass the object 308 through a first atmospheric plasma apparatus 302a, pause, reverse, and pass the object 308 through the first atmospheric plasma apparatus 302a again to apply multiple coats of a protective sealer for example. The transport 306 may then pass through a second atmospheric plasma apparatus 302b for an additional coat of the sealer. It will be appreciated that the direction, speed and stopping of the transport 306 may be controlled to optimize a particular atmospheric plasma utilization for a give atmospheric plasma apparatus 302a, 302b. It will further be appreciated that the transport 306 may be broken out into sections such that the direction, speed, intermitted pausing, and/or the repeating of any of the forgoing, either alone or in combination, may be applicable to a first object passing through a first atmospheric plasma apparatus 302a, without affecting a second object simultaneously passing through a second atmospheric plasma apparatus 302b.

[0080] The system 300 may include a one or more inhibitors 316 configured to substantially inhibit a plasma processing element (not shown) from leaving a plasma processing area 318. A plasma processing element may be anything introduced into a plasma processing area 318 by a plasma application. A plasma processing element may be one or more of a plasma, a plasma precursor, and a byproduct from a plasma process. In one embodiment the plasma processing element may be one or more of a, an unreacted gas, a partially or fully reacted gas, unreacted, partially reacted, or fully reacted surface elements, portions or remnants of the object 308 that have been etched or other processed in other ways to dislodge or alter object material, ash, coating material, cleaning material, or other materials created by a plasma processing step or a pre- or post- plasma processing step, and the like, either alone or in combination.

[0081] An inhibitor 316, may include without limitation, a vacuum, a pump, an exhaust, a vent, a blower, a liquid, a catch, a shield, a flow of fluid, a trap, a cold trap, a containment device, and the like. In one embodiment, one or more inhibitors 316 may be positioned adjacent or near an edge of a plasma generation zone 314a, 314b. In one embodiment, one or more inhibitors 316a may be positioned at a first edge of a first plasma generation zone 314a in a series of plasma generation zones 314a, 314b along a process direction 320. One or more inhibitors 316b may be positioned at a last edge of a last plasma generation zone 314b in a series of plasma generation zones 314a, 314b along a process direction 320. The inhibitors 316 may be the same as the devices 134 and 234 discussed in conjunction with Figures 1 and 2 and vice versa. It will be appreciated that one or more atmospheric plasma apparatuses may occupy a single plasma processing area 318. In one embodiment a plurality of atmospheric plasma apparatuses within a single plasm processing area 318 each performs a similar function. In this configuration, multiple atmospheric plasma apparatuses 302 may be similarly calibrated and inhibitors 316 may be chosen to inhibit the specific plasma elements generated by similar atmospheric apparatuses 302.

[0082] Inhibitors 316 may work individually or in combination with other inhibitors. For example, inhibitors 316a may be vacuums, each working to suck plasma element along a side of plasma apparatus 302a. Inhibitors 316b may work in combination with each other. For example, one inhibitor may be a blower or a pump and another inhibitor may be an exhaust vent configured and positioned to collect a flow of air or other fluid generated by the blower or pump. In another embodiment, one inhibitor 316may be a fluid flow device. For example, the fluid flow device may include a water or inert liquid source which flows or falls by force of gravity or by pump force to another inhibitor 316 or inhibitor component 16 acting as a drain. In one embodiment, the inhibitor 316 directs a flow of fluid along a path adjacent to one or more sides of a plasma generation zone 312. The path may be orthogonal to the plasma processing direction 320.

[0083] The inhibitors 316 may work continuously or intermittently and may recycle fluid or air or other inhibitor materials, components or mechanisms during the process of inhibiting migration of plasma elements outside a plasma processing area 318.

[0084] One or more inhibitors 316 functioning along a side of, or adjacent to, an atmospheric plasma apparatus 302 may create and edge or side 318a, 318b of the plasma processing area 318. Thus, the inhibitors 316 function to inhibit plasma elements from migrating outside a particular plasma processing area 318. In one embodiment, the plenum walls 304a and 304b, along with plasma processing area edges or sides 318a and 318b form a containment area that substantially contains a plasma element within the plasma processing area 318. It will be appreciated by those of skill in the art that the number, configuration, spacing, and function of the atmospheric plasma apparatuses 302 relative to the number, configuration, spacing and function of the inhibitors 316, together with the configuration of the plenum walls 304a and 304b relative to the apparatuses 302 and inhibitors 316 may determine the level of plasma element migration inhibition or containment.

[0085] Substantially inhibiting a plasma element migration from inside a plasma processing area 318 to outside that plasma processing area 318 may mean inhibiting more than fifty percent of the plasma elements created during a plasma generation within the plasma processing area 318 from entering another plasma processing area around one or more different plasma apparatuses. In one embodiment, it may be desirous that substantially inhibiting plasma elements from migrating outside a plasma processing area 318 means inhibiting more than seventy percent of the plasma elements created during a plasma generation within the plasma processing area 318 from entering another plasma processing area around one or more different plasma apparatuses. In yet another embodiment, substantially inhibiting plasma element migration from inside a plasma processing area 318 to outside that processing area may mean inhibiting more than ninety percent of the plasma elements created during a plasma generation within the plasma processing area 318 from entering another plasma processing area around one or more different plasma apparatuses. In yet another embodiment, substantially inhibiting plasma element migration from inside a plasma processing area 318 to outside that plasma processing area 318 may mean inhibiting plasma elements created during a plasma generation within the plasma processing area 318 to such a degree that such plasma elements do not adversely affect a plasma process in another plasma processing area.

[0086] In one embodiment, the system 300 includes sensors or other measurement devices (not shown) to determine an amount, concentration, condition, or characteristic of plasma processing element within a particular plasma processing area 318. The sensors may work in conjunction with one or more inhibitors 316, the plasma generators, and the transport 308 to control the amount of plasma processing element migration between processing areas 318. It will be appreciated that the sensors may be placed in any number of advantageous positions within the system to measure an aspect of plasma processing element in a particular area of the system 300. The sensors may also measure an aspect of a particular atmospheric plasma application or process, such as, without limitation, a depth of etching or ashing by atmospheric plasma, an amount of material being removed or added by atmospheric etching or ashing, an amount of particulate matter, a thickness of a coating being applied, a temperature, a pressure, or other aspect of the atmosphere in, on or around the object being processed. It will be appreciated by those of skill in the art that various types of sensors may be used to measure or monitor a wide variety of process conditions.

[0087] Turning now to Figure 4, an atmospheric plasma system 400 includes a plurality plasma apparatuses 402a, 402b positioned within a plenum 404. In one embodiment, the apparatuses 402a, 402b may be any of the types of apparatuses described herein. The system 400 includes a transport 406 to move an item 408 through the plasmas 412a, 412b generated between plates 410 of a plurality of atmospheric plasma apparatuses 402 in the system 400. The transport 406 may be any of the type of transports described herein. The system 400 also includes one or more inhibitors 416, any of which may be of the type described herein. In this embodiment, the inhibitors 416 establish an edge or side of a plasma processing area. The embodiments of Figure 4 show multiple processing areas 418, 419. Accordingly, the inhibitors 416 establish a flow or boundary 418a, 418b and 419a, 419b of respective plasma processing areas 418 and 419. The inhibitors may be any of the type of inhibitor described herein throughout and are configured to substantially inhibit a plasma processing element (not shown) from leaving a plasma processing area 418, 419. In one embodiment, the transport 406 moves an object 408 in the direction of process arrow 420 through multiple plasma processing areas 418, 419 without the need to place the object 408 in and out of various plasma chambers. [0088] As with the embodiment described in conjunction with Figure 3, plenum walls 404, may help confine plasma processing elements to a particular plasma processing area 418, 419. In one embodiment, the plenum walls 404 help define both plasma processing areas 418, 419. It will be appreciated that one or more apparatuses 402 within one or more plasma processing areas may be positioned within a single plenum defined by plenum walls 404. It will be appreciated by those of skill in the art that the number, configuration, spacing, and function of the atmospheric plasma apparatuses 402 and the number, configuration, spacing and function of the inhibitors 416 may help define a size or other characteristic of a plasma processing area 418, 419. The placement of the plenum walls 404 may also affect the size and containment abilities or the plasma processing area 418, 419. The number, configuration, spacing, and function of the atmospheric plasma apparatuses 402, inhibitors 416 and/or plenum walls 404 may also affect the ability of the inhibitors 416 to inhibit plasma processing elements from migrating between plasma processing areas 418, 419.

[0089] As with the inhibitors 316 in the system 300 embodiment described in conjunction with Figure 3, the inhibitors 416 of the embodiment described in Figure 4 may substantially inhibit plasma processing elements generated within a particular plasma processing area 418 or 419 from migrating outside that particular plasma processing area 418 or 419 without completely containing the plasma processing element with such plasma processing area 418 or 419. Indeed, an inhibitor 416 may substantially inhibit a plasma element migration from inside a plasma processing area 418, 419 to outside that plasma processing area 418, 419 may mean inhibiting more than sixty percent of the plasma elements created during a plasma generation within the plasma processing area 418, 419 from entering another plasma processing area established around one or more different plasma apparatuses. In one embodiment, the inhibitors 416 substantially inhibit a plasma element generated within a plasma processing area 418, 419 from migrating outside such plasma processing area 418,

419 by inhibiting more than eighty percent of the plasma elements created during a plasma generation from leaving such plasma zone 418, 419. In one embodiment, substantially inhibiting plasma element migration from inside a plasma processing area 418, 419 to outside that plasma processing area 418, 419 may mean inhibiting plasma elements created during a plasma generation within the plasma processing area 418, 419 such that plasma processing elements from that plasma processing area 418, 419 do not adversely affect a plasma process occurring in another plasma processing area. [0090] The system 400 may also have sensors or other measurement devices (not shown) to determine an amount, concentration, condition, or characteristic of a plasma element, or area containing a plasma element, within a particular plasma processing area. The sensors may work in conjunction with one or more inhibitors 416, plasma generators and/or transports 406 to control the amount of plasma processing element migration between processing areas 418, 419. In one embodiment, if a threshold amount or concentration of plasma processing element is detected, the inhibitors 416 may be adjusted to increase their ability to inhibit. By way of nonlimiting example, if a user desires to inhibit eighty-five percent of plasma processing elements from leaving a particular plasma processing area, and a sensor detects that the system is nearing that threshold for a particular area 418, 419, then one or more inhibitors 416 may adjusted to increase, for example, a fluid flow, or a suction pressure, or an exhaust intake. Additionally, the system 400 may bring additional inhibitors 416 online to meet an increased need to maintain a determined plasma processing element concentration within a particular plasma processing area 418, 419.

[0091] In one embodiment, the system 400 includes first plasma processing area 418 dedicated to cleaning an object 408, where one or more atmospheric plasma apparatuses 402 are calibrated for that purpose. Such calibrations may include, by way of nonlimiting example, one or more of using a particular type of plasma 412a or a plasma 412a with a particular characteristic, applying a plasma 412a to a particular area or areas of the object, applying a plasma 412a to an object at a particular angle or flow rate, determining a plasma application duration, determining a transport 406 speed or repetition of movement, adjusting a power application, adjusting a wave frequency, adjusting one or more gases, adjusting one or more plasma precursors, and the like. Dedicating a plasma processing area to a purpose such as cleaning may also include deciding which inhibitors 416 work best for that particular process.

[0092] In another embodiment, system 400 may also include a plasma processing area 419 dedicated to plasma enhanced chemical vapor deposition. One or more appropriately calibrated atmospheric plasma apparatuses 402b and various inhibitors 416 may be calibrated for this purpose. It will be appreciated by those of skill in the art that by using an atmospheric plasma apparatus of the kinds described herein, a single or simplified manufacturing process can be used while employing multiple and different plasma applications for different purposes. Accordingly, a single, more efficient overall process can use various types of plasma to prepare an object such as a printed circuit board, coat that circuit board, and remove masking materials from that circuit board, without stopping the process or incurring extra labor costs to move the object into and out of non-atmospheric plasma chambers. Furthermore, the apparatuses and systems described herein allow for the deployment of plasma directly in the production line and the need for cost-intensive chambers for producing a partial vacuum is eliminated.

[0093] Turning now to Figure 5, a method 500 for applying atmospheric plasma includes providing an atmospheric plasma generator 502, generating a plasma in a plasma generation zone 504, transporting an object through a plasma in the plasma generation zone, and substantially inhibiting a plasma processing element created by the plasma generation from leaving a predetermined plasma processing area around the plasma generator.

[0094] In one embodiment, the step 502 of providing an atmospheric plasma generator. The plasma generator may include a power supply configured to provide electromagnetic waves. The electromagnetic waves may be of a frequency of greater than about 3 kHz. In one embodiment, the power supply provides electromagnetic waves having a frequency of between about 40 kHz and about 400 MHz. In yet another embodiment, the power supply provides electromagnetic waves having a frequency of between about 100 MHz and about 200 MHz. The step 502 of providing an atmospheric plasma generator may also include providing a plasma precursor feed configured to supply a plasma precursor that can be energized by the electromagnetic waves to create a plasma in a plasma generation zone. In one embodiment, the plasma precursor is one or more gases. Providing 502 an atmospheric plasma generator may include providing one or more atmospheric plasma generators. In yet another embodiment, the step 502 of providing an atmospheric plasma generator includes providing an atmospheric plasma apparatus or system of the kinds described herein throughout to generate the plasma.

[0095] The step 504 of generating a plasma in a plasma generation zone in atmospheric conditions includes energizing the plasma precursor with electromagnetic waves existing between a pair of plates, at least one of said plates connected to and in electrical communication with the power supply of the plasma generator provided in step 502. In one embodiment, the step 504 generating a plasma includes matching an impedance of the power supply with the impedance at a plate connection that is connected to the power supply by using a matching network having at least one tuning stub. The matching network may be positioned between, and in electrical communication with the power supply and the plate connected to the power supply. In one embodiment, the step 504 of generating a plasma includes using the atmospheric plasma apparatus or system described herein throughout to generate to the plasma in a plasma generation zone.

[0096] Step 508 may include matching an impedance of the power supply of the plasma generator to a desired range of impedances of a load where the plasma might be generated. This may be accomplished using the matching networks described herein, which may include tuning stubs. The load impedance to be matched with the power supply impedance may include a plate connection impedance of a plate electrically attached to the power supply a power transmission line, where the plate facilitates the generation of the plasma. In one embodiment, the load impedance to be matched with the power supply impedance may be the plasma generated at the plate. In one embodiment the load impedance to be matched to the power supply impedance is a combination of the plate connection impedance and the plasma impedance.

[0097] The step 508 of transporting an object through a plasma in the plasma generation zone may include transporting an object through the plasma between a pair of plates, at least one of which is connected to, and in electrical communication with the power supply provided in step 502. In one embodiment, the step 506 includes using the atmospheric plasma apparatus or system described herein throughout to transport the object through a plasma in the plasma generation zone.

[0098] The step 510 of substantially inhibiting a plasma processing element created during step 504 from leaving a predetermine plasma processing area around the plasma generator provided in step 502 includes using an inhibitor positioned at an end of the plasma processing area to inhibit the plasma processing element from passing beyond the end of the plasma processing area. In one embodiment, inhibitors are positioned adjacent opposing sides of a plasma generator or at either end of a series of plasma generators along a process path. In one embodiment one or more plasma generators and inhibitors are placed within a plenum and the edges or sides of the plasma processing area created by the inhibitors, together with the walls of the plenum facilitate the substantial inhibition of a plasma processing element from leaving the plasma processing area. In one embodiment, the inhibitor directs a flow of fluid along a path adjacent to one or more sides of a plasma generation zone. The path may be orthogonal to a plasma processing direction. In one embodiment, step 508 includes using an atmospheric plasma apparatus or system described herein to substantially inhibit a plasma processing element created during step 504 from leaving a predetermine plasma processing area around one or more plasma generators provided in step 502.

[0099] Turning now to Figure 6, an atmospheric plasma system 600 may be of a kind described in conjunction with Figures 3 and 4. The atmospheric plasma system 600 may include a memory 602 configured to store instructions and a main processor 604 operatively coupled with the memory and configured to execute the instructions to perform operations relating to the apparatuses and systems described herein. The operations may include the method steps described in conjunction with Figure 5. The operations may further include those operations necessary or desired to carry out the functionality of the apparatus and/or system as described herein. The memory 602 can store, transmit, and/or receive data or information related to the power supply 618, plasma precursor feed 624, inhibitors 630, 632, 634, transport 638 or any other components, modules or units of an atmospheric plasma apparatus or system described herein. The memory 602 may also store and use information for controlling the size, location, or a characteristic of the plasma and how an object is exposed to, enters, exits, reenters, reexits or is maintain within the plasma. The memory 602 may store and use information for controlling plasma processing element migration. Memory 602 can additionally store protocols and/or algorithms associated with estimating, calculating and/or comparing an amount or concentration of plasma processing element within a plasma processing area.

[00100] It will be appreciated that the memory 602 described herein can be either volatile memory or nonvolatile memory or can include both volatile and nonvolatile memory. By way of illustration, and not limitation, nonvolatile memory can include read only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable PROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM), which acts as external cache memory. By way of illustration and not limitation, RAM is available in many forms such as synchronous RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), Synchlink DRAM (SLDRAM), and direct Rambus RAM (DRRAM). The memory 602 is intended to comprise, without being limited to, these and any other suitable types of memory. [00101] The main processor 604 may be one or more processors operatively coupled to the memory 602, such that the one or more processors can read information from and write information to the memory 602. The main processor 602 may be in operable communication with the power supply 618, plasma precursor feed 624, inhibitors 630, 632, 634, transport 638 or any other components, modules or units of an atmospheric plasma apparatus or system described herein. The main processor 604 may reside within one or more atmospheric plasma apparatuses or elsewhere in the system 600.

[00102] It will be appreciated by those of skill in the art that the main processor 604 or other processors that implement or perform the various illustrative apparatuses, systems, modules, units, components, features, functions, aspects, algorithms, methods and processes described in connection with the embodiments disclosed herein may be, and include without limitation, a general-purpose processor, a digital signal processor (DSP), a dedicated processor (e.g., an embedded processor), a generic-purpose processor (e.g., a central processing unit (CPU), an application processor (AP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, a discrete gate or transistor logic, discrete hardware components, a microprocessor, any conventional processor, controller, microcontroller, state machine, or any combination thereof.

[00103] Thus, the main processor 604 or processors referenced herein may be implemented as a combination of computing devices, for example, a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration. In some aspects, the main processor 604 and/or other processors and the memory 602 may be integral with each other. The main processor 604 and/or other processors and the memory 602 may reside in an ASIC. Additionally, the ASIC may reside in a user terminal or unit (not shown). In the alternative, the processors and the memory may reside as discrete components in a user terminal or unit (not shown).

[00104] Finally, the processor or processors may include one or more modules configured to execute instructions to implement or perform the various illustrative devices, systems, modules, units, components, functions, features, aspects, algorithms, methods and processes described in connection with the embodiments disclosed herein. It will be appreciated that the modules described herein are exemplary for the purpose of describing features of the present invention and should not be read to be limiting of its scope. It will be appreciated that the main processor 604, other processors, and associated modules, may be configured or programmed in several ways to accomplish the teachings of the embodiments disclosed herein.

[00105] In one embodiment, the system 600 and/or main processor 604 includes a plasma generation module 606 having a power supply module 608 and a precursor feed module 610. The main processor 604 may include an inhibitor module 612, a transport module 614, and a sensor module 616.

[00106] The plasma generation module 606 may use the power supply module 608 and the precursor feed module 610 to generate a plasma in atmosphere. The power supply module 608 may include a power supply 618 and a matching network 620. In one embodiment, the power supply 618 provides electromagnetic waves having a frequency of greater than about 3 kHz between two or more plates (not shown). In another embodiment, the frequency of the electromagnetic waves provided by the power supply 618 is between about 40 kHz and about 400 MHz. In yet another embodiment, the power supply 618 provides electromagnetic waves having a frequency of between about 100 MHz and about 200 MHz. In one embodiment, the power supply 618 is an RF generator.

[00107] In one embodiment, the power supply 618 is attached to, and in electronic communication with at least one of the two or more plates. One of the two or more plates may serve as an electrode and another of the two or more plates may serve as a ground. In another embodiment, one power supply 618 may be attached to, and in electronic communication with at least one of the two or more plates, and a second power supply 618 may be attached to another of the two or more plates.

[00108] The matching network may be positioned between, and in electronic communication with, the power supply 618 and a plate. Where more than one power supply 618 is used, a similar number of matching networks 620 may be positioned between, and in electronic communication with such power supplies and the plates to which they may be attached. Using two power supplies 618, each attached to a plate between which the plasma is generated, allows electrical potential to oscillate between the plates. The oscillating potential may allow plasma to be generated and applied to opposing sides of an object at relatively the same time, especially is the speed of oscillation is fast. Thus, the plasma, used in a plasma enhanced chemical vapor deposition, for example, may be applied to both sides of an object such as a printed circuit board almost simultaneously. In this configuration, the use of atmospheric plasma in a coating operation may be more conformal than it otherwise might be outside of a plasma deposition chamber.

[00109] The power supply module 608 may have its own processor 622 for controlling the functions of the power supply module 608 and may work in connection with the main processor 604 and/or other processors 628, 636, 640, and 644.

[00110] The precursor feed module 610 may be configured to supply any precursor than can become a plasma when provided with the energy supplied by the power supply module 608. The precursor feed module 610 may include plasma precursor feed 624 for suppling the precursor to be transformed at least partially into the plasma used for the variety of plasma operations described herein. The plasma precursor feed 624 may be configured to supply a fluid such as liquid or gas, or a solid. In one embodiment, the precursor feed is a gas supply configured to supply a variety of gases chosen for a desired plasma application. For example, it may be desired to have a relatively inert plasma for a pre-coating cleaning or preparation step. In this embodiment, the gas supply could be configured to supply a mixture of oxygen, argon, helium, and hydrogen for example. Where the apparatus is used to enhance the chemical vapor deposition coating of an object such as a printed circuit board, for example, the gas may be chosen such that once energized, the resulting plasma could activate a surface of the printed circuit board to facilitate the growth of desired polymers thereon into a coating such as perylene.

[00111] The plasma precursor feed 624 may be configured to prepare the plasma precursor prior to being energized. This preparation may be one or more of gasifying a precursor, pyrolyzing a precursor, heating a precursor, vaporizing a precursor, or other processes.

[00112] The precursor feed module 610 may include an applicator 626. The applicator 626 may include any number of directional apparatuses to facilitate creating a plasma in a certain position, with a particular shape, or with a one or more desired characteristics. The directional apparatus of the applicator 626 may include one or more of a nozzle, an orifice, a valve, an opening, other apparatus known in the art to direct a fluid flow. The applicator 626 may be a flow path. The flow path may be designed to increase or decrease a pressure. The flow path may be narrower at an entrance and broader at an exit, or vice versa. The applicator 626, alone or in combination with a directional apparatus, may be configured to apply a plasma precursor from the plasma precursor feed 624 at consistent or variable speed, flow rate, pressure, pressure differential, direction, frequency, temperature, volume, consistency, or intermittency. It will be appreciated by those of skill in the art that one or more applicators 626 may be used to apply a plasma precursor in one or more ways discussed above to a plasma generation zone (not shown). In one embodiment, the applicator and/or directional apparatus may be part of the plasma precursor feed 624.

[00113] The precursor feed module 610 may have its own processor 628 for controlling the functions of the precursor feed module 610 and may work in connection with the main processor 604 and/or other processors 622, 636, 640, and 644.

[00114] In one embodiment, the power supply module 608 and the precursor feed module are configured and arranged to optimize the ionization by the power supply 618 of the plasma precursor supplied by the plasma precursor feed 610. The modules 608 and 610 may work together to create a desired plasma and a desired plasma application to an object within a desired plasma generation zone.

[00115] The inhibitor module 612 may include a flow creator 630, a suction creator 632 and a capture device 634. The flow creator 630 may include, by way of non-limiting example, a fan, a pump, a vacuum, a blower, a device to create a positive pressure or pressure differential, a device to introduce a fluid, a heat source, an agitator, or anything that may change a direction of a plasma processing element resulting from the generation or use of an atmospheric plasma. The suction creator 632 may include, by way of non-limiting example, a fan, a pump, a vacuum, a blower, a device to create a negative pressure or pressure differential, or anything that may change a direction of a plasma processing element resulting from the generation or use of an atmospheric plasma. A capture device 634 may include, by way of non-limiting example a vent, a drain, an exhaust, a catch, a trap, a containment device, or anything that may capture or dispose of a plasma processing element resulting from the generation or use of an atmospheric plasma. It will be appreciated by those of skill in art that the categories of inhibitors and inhibitor components 630, 632, and 634 are merely representative for clarity of drawing and not to be deemed as exhaustive.

[00116] The inhibitor module 612 may control the intensity, timing, frequency and intermittency of use, power, direction and other operating parameters of an inhibitor. The inhibitor module 612 may work with the sensor module 616 to create shield that may allow up to a certain amount or concentration of plasma processing element to leave a plasma processing area. [00117] The inhibitor module 612 may have its own processor 636 for controlling the functions of the inhibitor module 636 and may work in connection with the main processor 604 and/or other processors 622, 628, 640, and 644.

[00118] The transport module 614 is configured to move an object through the plasma generated by the plasma generation module 606. The transport module 614 includes a transport 638, which may be a belt or system of belts upon which the object to be processed rests. In other embodiments, the transport 638 may include one or more cradles suspended by one or more cables or wires. In yet other embodiments, one or more posts with one or more holding mechanism may be connected to a drive shaft to move the object between plates and through a plasma generation zone. The transport 638 may be any device or system used to hold, maintain or move an object within or through a plasma generation zone and/or between two or more plates, between which an energized field exists.

[00119] In one embodiment, the transport module 614 may be configured to move the transport 638, and thus the object, forward or backward through a plasma, or to stop or pause the transport 638 for a duration of time within the plasma. The transport module 612 may work in conjunction with the plasma generation module 606 to optimize the utilization of atmospheric plasma for a particular application. For example, the transport module 614 may cause the transport 638 to pass the object through a first atmospheric plasma apparatus multiple times to apply multiple coats of a protective sealer. The transport module 614 may then cause the transport 638 to pass the object through a second atmospheric plasma apparatus for an additional coat or a post coating atmospheric plasma process. It will be appreciated that the direction, speed and stopping of the transport 638 may be controlled by the transport module 614 to optimize a particular atmospheric plasma utilization for a give atmospheric plasma apparatus. It will further be appreciated that the transport 638 may be broken out into sections with each section controlled by the transport module 614 such that the direction, speed, intermittent pausing, and the like of one object within a first atmospheric plasma apparatus does not affect other objects within the same system or production line, which may be moving at different speeds or directions through a second atmospheric plasma apparatus.

[00120] The transport module 614 may have its own processor 640 for controlling the functions of the inhibitor module 614 and may work in connection with the main processor 604 and/or other processors 622, 628, 636, and 644. [00121] The sensor module 612 may include sensors 642 or other measurement devices 642 to determine an amount, concentration, condition, or characteristic of plasma element within a particular plasma processing area. In one embodiment, the sensor module 612 controls the operation of the sensors 642 and the sending of data to and from the sensors 642 and other modules in the system 600. The sensors 642 may include one or more of an impedance meter, a pulsed N2 laser, current probe, voltage probe, X-ray detector, optical diagnostic reader, a Langmuir probe, a directional coupler, a spectrometer, chromatography equipment, proton radiography equipment, a plasma anemometer, a Schottky power detector, a temperatures gauge, a pressure gauge, a particulate matter gauge and other appropriate sensors for measuring a plasma process condition.

[00122] The sensors may work in conjunction with the inhibitor module 612 to control the amount of plasma element migration between processing areas. In this configuration, the sensors 642 may serve as a quality control measure to test a process condition and modify the system 600 accordingly.

[00123] The sensors 642 may also measure an aspect of a particular atmospheric plasma application, such as, without limitation, a depth of etching or ashing by atmospheric plasma, an amount of material being removed or added by atmospheric etching or ashing, thickness of a coating being applied, a temperature, pressure, or other aspect of the atmosphere in, on or around the object being processed. The sensors 642 may provide data to and from other modules or system components to start, stop, pause or in other ways alter a process step depending upon certain criteria. For example, the sensors may sense a depth of material removed during an ashing process and signal that the process should be stopped.

[00124] The sensors 642 may measure an electrical parameter of the plasma in order to maximize power output for a particular plasma application or particular plasma application setup. This data may also be used to tune the matching system prior to, during, or after a process step. The sensor module 616 may have its own processor 644 for controlling the functions of the sensor module 616 and may work in connection with the main processor 604 and/or other processors 622, 628, 636, and 640.

[00125] While certain illustrative embodiments have been described in connection with the figures, those of ordinary skill in the art will recognize and appreciate that embodiments encompassed by the disclosure are not limited to those embodiments explicitly shown and described herein. Rather, many additions, deletions, and modifications to the embodiments described herein may be made without departing from the scope of embodiments encompassed by the disclosure, such as those hereinafter claimed, including legal equivalents. In addition, features from one disclosed embodiment may be combined with features of another disclosed embodiment while still being encompassed within the scope of embodiments encompassed by the disclosure as contemplated by the inventors.

[00126] The present subject matter may be embodied in other specific forms without departing from its spirit or essential characteristics. The described embodiments are to be considered in all respects only as illustrative and not restrictive.

[00127] The scope of the present invention is defined by the appended claims.

Claims

CLAIMS What is claimed is:

1. An atmospheric plasma apparatus, comprising: a plasma generator, the plasma generator comprising a first power supply configured to provide power at a frequency of greater than about 3 kHz; a first plasma precursor feed configured to supply a plasma precursor that can be energized by the electromagnetic waves to create a plasma in a plasma generation zone; a pair of plates, wherein at least one of the plates is in electrical communication with the power supply and wherein at least a portion of the plasma generation zone is between the plates; a first matching network comprising at least one tuning stub, the matching network positioned between, and in electrical communication with, the power supply and the at least one plate, the matching network configured to facilitate the matching of the power supply impedance with a determined impedance range at a point of plasma generation, using at least one tuning stub; and a transport configured to transport an object through the plasma between the plates.

2. The atmospheric plasma apparatus of claim 1, wherein the power supply provides power at a frequency of between about 40 kHz and about 400 MHz.

3. The atmospheric plasma apparatus of claim 2, wherein the power supply provides power at a frequency of between about 100 MHz and about 200 MHz.

4. The atmospheric plasma apparatus of claim 1, wherein the plasma precursor comprises one or more gases chosen from the group comprising Ar, O2, ¾_, N2, He, C0₂, CF4, C₃F₆, C₄FS, CH₃F, SiF₄ SF₆, SiH₄, SiCl₂H₂, SiHCl₃, Si(OC₂H₅)₄, N₂0, and NH₄

5. The atmospheric plasma apparatus of claim 1, wherein a surface of one of the pair of plates opposes and is spaced less than 600 millimeters from a surface of the other of the pair of plates on average.

6. The atmospheric plasma apparatus of claim 5, wherein a surface of one of the pair of plates opposes and is spaced between about 50 millimeters and about 400 millimeters from a surface of the other of the pair of plates on average.

7. The atmospheric plasma apparatus of claim 6, wherein a surface of one of the pair of plates opposes and is spaced between about 100 millimeters and about 300 millimeters from a surface of the other of the pair of plates on average.

8. The atmospheric plasma apparatus of claim 1, wherein one or more of the pair of plates comprises one or more materials chosen from the group, copper, aluminum, stainless steel, tantalum, nickel, chromium, tin, niobium, carbon and zirconium.

9. The atmospheric plasma apparatus of claim 1, wherein one of the pair of plates is electrically connected to the first power supply and wherein the other of the pair of plates is electrically grounded.

10. The atmospheric plasma apparatus of claim 1, further comprising a second matching network comprising at least one tuning stub, and a second power supply, wherein the first matching network is in electrical communication with, and positioned between, the first power supply and one of the pair of plates, and wherein the second matching network is in electrical communication with, and positioned between, the second power supply and the other of the pair of plates, the matching networks configured to facilitate the matching of the power supply impedance to which each is connected with a determined impedance range at a point of plasma generation.

11. The atmospheric plasma apparatus of claim 10, further comprising a second plasma precursor feed configured to supply a plasma precursor that can be energized by electromagnetic waves generated by the second power supply to create a plasma in a plasma generation zone.

12. The atmospheric plasma apparatus of claim 1, wherein the plasma precursor feed comprises a directional apparatus to facilitate the application of the plasma to the object.

13. The atmospheric plasma apparatus of claim 1, wherein the matching network is tuned using data from one or more of impedance meter, a pulsed N2 laser, a current probe, a voltage probe, an X-ray detector, an optical diagnostic reader, a Langmuir probe, a directional coupler, and a Schottky power detector

14. An atmospheric plasma system, comprising: a plurality of atmospheric plasma apparatuses, each atmospheric plasma apparatus comprising: a plasma generator, the plasma generator comprising a power supply configured to power at a frequency of greater than about 3 kHz; a plasma precursor feed configured to supply a plasma precursor that can be energized by the electromagnetic waves to create a plasma in a plasma generation zone; a pair of plates, wherein at least one of the plates is in electrical communication with the power supply and wherein at least a portion of the plasma generation zone is between the plates; and a first matching network comprising at least one tuning stub, the matching network positioned between, and in electrical communication with, the power supply and the at least one plate, the matching network configured to facilitate the matching of the power supply impedance with a determined impedance range at a point of plasma generation using at least one tuning stub; and a transport configured to transport an object through the plasma between the plates of the plurality of atmospheric plasma apparatuses.

15. The atmospheric plasma system of claim 14, wherein a first plasma generator is configured to provide a plasma for cleaning the object and a second plasma generator is configured to provide a plasma for plasma enhanced chemical vapor deposition.

16. The atmospheric plasma system of claim 14, further comprising an inhibitor to substantially inhibit a plasma processing element from leaving a plasma processing area.

17. The atmospheric plasma system of claim 16, wherein the inhibitor is a fluid flow device positioned to direct a fluid along a path adjacent to at least one side of the plasma generation zone.

18. The atmospheric plasma system of claim 14 further comprising a memory configured to store instructions and a processor operatively coupled with the memory and configured to execute the instructions to perform operations, the operations comprising: generating a plasma in a first plasma generation zone, the plasma generating operation comprising: providing a plasma precursor between a pair of plates; energizing the plasma precursor between the pair of plates with at least one power supply in electrical communication with at least one of the pair of plates, the power supply configured to provide electromagnetic waves between the pair of plates, the electromagnetic waves comprising a frequency of greater than about 3 kHz; and matching an impedance of the at least one power supply with a determined impedance range at a point of plasma generation using at least one tuning stub; and transporting an object through the plasma generation zone and between the plates of the plurality of atmospheric plasma apparatuses.

19. The atmospheric plasma system of claim 18, wherein the operations further comprise substantially restricting a plasma processing by-product to a plasma processing area by using a restrictor positioned to direct a fluid along a path adjacent to at least one side of the plasma generation zone, the fluid configured to inhibit movement of the plasma processing by-product outside of the plasma processing area.

20. A method of applying atmospheric pressure, the method comprising, providing a plasma generator, the plasma generator comprising a first power supply configured to power at a frequency of greater than about 3 kHz; a first plasma precursor feed configured to supply a plasma precursor that can be energized by the electromagnetic waves to create a plasma in a plasma generation zone; generating a plasma in a first plasma generation zone, the plasma generating operation comprising: providing a plasma precursor between a pair of plates; energizing the plasma precursor between the pair of plates with the first power supply in electrical communication with at least one of a pair of plates, the power supply configured to provide electromagnetic waves between the pair of plates; matching an impedance of the first power supply with a determined impedance range at a point of plasma generation using at least one tuning stub; using a matching network comprising at least tuning stub, wherein the matching network is in electrical communication with the first power supply and the plate connected to the at least one power supply; transporting an object through the plasma between the pair of plates; and inhibiting a plasma processing by-product to a plasma processing area by using a restrictor positioned to direct a fluid along a path adjacent to at least one side of the plasma generation zone, the fluid configured to inhibit movement of the plasma processing by-product outside of the plasma processing area.