JP6858656B2 - 給電部材及び基板処理装置 - Google Patents
給電部材及び基板処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 89
- 239000002184 metal Substances 0.000 claims description 89
- 239000000835 fiber Substances 0.000 claims description 24
- 238000012546 transfer Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 48
- 239000007789 gas Substances 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 15
- 239000010949 copper Substances 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000002500 effect on skin Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32027—DC powered
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Description
最初に、本実施形態に係る給電部材が適用可能な基板処理装置について、エッチング装置を例に挙げて説明する。図1は、本実施形態に係るエッチング装置の概略図である。
本実施形態に係る給電部材70について説明する。図2は、本実施形態に係る給電部材70の一例を示す図である。図3は、図2の給電部材70の中心軸を通る縦断面図である。図4は、図2の給電部材70の接続部材の断面形状の説明図である。
尚、本実施形態では第1の導電部材710と第2の導電部材720は対向配置されているが、対向配置されていない場合でも電気的に接続可能である。
本実施形態に係る給電部材70の効果について説明する。
次に、本実施形態に係る給電部材70の接続部材730の変形例について説明する。図7から図9は、本実施形態に係る給電部材の接続部材の別の例の断面形状の説明図である。
次に、多孔質金属シートにより形成された接続部材を有する給電部材の断熱性及び電気伝導性について、具体的に説明する。
圧力:50mTorr(6.7Pa)
高周波電力HF:2400W
高周波電力LF:0W
エッチングガス:CF4(150sccm)
エッチング時間:1分
ウエハW:SiO2/Si(φ300mm)
圧力:20mTorr(2.7Pa)
高周波電力HF:0W
高周波電力LF:2000W
エッチングガス:O2(150sccm)
エッチング時間:1分
ウエハW:SiO2/Si(φ300mm)
圧力:20mTorr(2.7Pa)
高周波電力HF:2400W
高周波電力LF:500W
エッチングガス:O2(150sccm)
エッチング時間:1分
ウエハW:SiO2/Si(φ300mm)
圧力:20mTorr(2.7Pa)
高周波電力HF:600W
高周波電力LF:4500W
エッチングガス:O2(150sccm)
エッチング時間:1分
ウエハW:SiO2/Si(φ300mm)
20 載置台
32 第1高周波電源
34 第2高周波電源
70 給電部材
710 第1の導電部材
720 第2の導電部材
730 接続部材
740 支持部材
106a チャック電極
112 直流電圧源
Claims (9)
- 電力を供給するために用いられる給電部材であって、
第1の導電部材と、
第2の導電部材と、
少なくとも一部が多孔質金属シートにより形成され、前記第1の導電部材と前記第2の導電部材とを電気的に接続する接続部材と、
を有し、
前記多孔質金属シートは、金属繊維により形成されている、
給電部材。 - 前記金属繊維の繊維径は、10μm〜20μmである、
請求項1に記載の給電部材。 - 前記多孔質金属シートは、円筒形状又はロール状に形成されている、
請求項1又は2に記載の給電部材。 - 前記円筒形状の内部空間に設けられ、一端が前記第1の導電部材と接続され、他端が前記第2の導電部材と接続された、断熱性を有する絶縁部材により形成された支持部材を有する、
請求項3に記載の給電部材。 - 前記支持部材の内部には、伝熱ガスを通流させて前記円筒形状の内部空間に向けて前記伝熱ガスを供給する伝熱ガス供給路が形成されている、
請求項4に記載の給電部材。 - 当該給電部材は、プラズマ生成用の高周波電源と、基板に対して所定のプラズマ処理を施す処理容器内に設けられたプラズマ生成用電極との間に設けられており、
前記第1の導電部材は、前記プラズマ生成用電極と接続され、
前記第2の導電部材は、前記高周波電源に接続される、
請求項1乃至5のいずれか一項に記載の給電部材。 - 当該給電部材は、静電チャック用の直流電圧源と、処理容器内に設けられた静電チャック用のチャック電極との間に設けられており、
前記第1の導電部材は、前記チャック電極に接続され、
前記第2の導電部材は、前記直流電圧源に接続される、
請求項1乃至6のいずれか一項に記載の給電部材。 - 処理容器と、
前記処理容器内に設けられたプラズマ生成用電極と、
前記プラズマ生成用電極に印加する高周波電力を生成する高周波電源と、
前記高周波電源により生成される前記高周波電力を伝送して前記プラズマ生成用電極に供給する給電部材と、
を備え、
前記給電部材は、
前記プラズマ生成用電極に接続される第1の導電部材と、
前記高周波電源に接続される第2の導電部材と、
多孔質金属シートにより形成され、前記第1の導電部材と前記第2の導電部材とを電気的に接続する接続部材と、
を有し、
前記多孔質金属シートは、金属繊維により形成されている、
基板処理装置。 - 処理容器と、
前記処理容器内に設けられた静電チャック用のチャック電極と、
前記チャック電極に印加する直流電力を生成する直流電圧源と、
前記直流電圧源により生成される前記直流電力を伝送して前記チャック電極に供給する給電部材と、
を備え、
前記給電部材は、
前記チャック電極に接続される第1の導電部材と、
前記直流電圧源に接続される第2の導電部材と、
多孔質金属シートにより形成され、前記第1の導電部材と前記第2の導電部材とを電気的に接続する接続部材と、
を有し、
前記多孔質金属シートは、金属繊維により形成されている、
基板処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2017124344A JP6858656B2 (ja) | 2017-06-26 | 2017-06-26 | 給電部材及び基板処理装置 |
KR1020180071393A KR102508315B1 (ko) | 2017-06-26 | 2018-06-21 | 급전 부재 및 기판 처리 장치 |
TW107121427A TWI779052B (zh) | 2017-06-26 | 2018-06-22 | 供電構件及基板處理裝置 |
US16/016,990 US10943766B2 (en) | 2017-06-26 | 2018-06-25 | Power feed member and substrate processing apparatus |
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JP2017124344A JP6858656B2 (ja) | 2017-06-26 | 2017-06-26 | 給電部材及び基板処理装置 |
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JP2019009306A JP2019009306A (ja) | 2019-01-17 |
JP6858656B2 true JP6858656B2 (ja) | 2021-04-14 |
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JP (1) | JP6858656B2 (ja) |
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TW (1) | TWI779052B (ja) |
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TWI756475B (zh) * | 2017-10-06 | 2022-03-01 | 日商東京威力科創股份有限公司 | 抑制粒子產生之方法及真空裝置 |
JP6530878B1 (ja) * | 2017-10-24 | 2019-06-12 | 日本碍子株式会社 | ウエハ載置台及びその製法 |
KR102608957B1 (ko) * | 2018-08-27 | 2023-12-01 | 삼성전자주식회사 | 플라즈마 처리 장치 |
JP2021170495A (ja) * | 2020-04-16 | 2021-10-28 | 株式会社イー・エム・ディー | 高周波アンテナ及びプラズマ処理装置 |
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JP2562761B2 (ja) * | 1992-02-14 | 1996-12-11 | 株式会社巴川製紙所 | 金属繊維焼結シートの製造方法 |
JP4545896B2 (ja) * | 2000-07-19 | 2010-09-15 | 日本発條株式会社 | ヒータユニット及びその製造方法 |
US6416897B1 (en) * | 2000-09-01 | 2002-07-09 | Siemens Westinghouse Power Corporation | Tubular screen electrical connection support for solid oxide fuel cells |
JP2003213432A (ja) * | 2002-01-24 | 2003-07-30 | Shinko Seiki Co Ltd | プラズマcvd装置用電極 |
JP4183059B2 (ja) | 2002-03-26 | 2008-11-19 | 東京エレクトロン株式会社 | 高周波給電棒及びプラズマ処理装置 |
JP4132873B2 (ja) * | 2002-02-28 | 2008-08-13 | 東京エレクトロン株式会社 | プラズマ処理装置およびその給電部材 |
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TW201922063A (zh) | 2019-06-01 |
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KR20190001536A (ko) | 2019-01-04 |
US10943766B2 (en) | 2021-03-09 |
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US20180374679A1 (en) | 2018-12-27 |
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