TW201921580A - 具有冷卻和傳導銷的基板支撐件 - Google Patents

具有冷卻和傳導銷的基板支撐件

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TW201921580A
TW201921580A TW107128266A TW107128266A TW201921580A TW 201921580 A TW201921580 A TW 201921580A TW 107128266 A TW107128266 A TW 107128266A TW 107128266 A TW107128266 A TW 107128266A TW 201921580 A TW201921580 A TW 201921580A
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Taiwan
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substrate
substrate support
conductive
conductive pins
gas
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TW107128266A
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English (en)
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特拉維斯李 高
菲利浦亞倫 克勞司
李元錫
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美商應用材料股份有限公司
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Publication of TW201921580A publication Critical patent/TW201921580A/zh

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Abstract

此處所述的實施例大致關於電漿輔助或電漿強化的處理腔室。更具體而言，此處的實施例關於靜電夾持（ESC）基板支撐件，配置成在電漿輔助或電漿強化的半導體製造處理期間，對基板提供脈衝DC電壓，及施加脈衝DC電壓的方法。

Description

具有冷卻和傳導銷的基板支撐件
此處所述的實施例大致關於在半導體製造中使用的處理腔室，具體而言，關於具有配置成對佈置於其上的基板偏壓的基板支撐組件的處理腔室，及偏壓基板的方法。
可靠地產生高深寬比的特徵為半導體設備的非常大規模整合（VLSI）及超大規模整合（ULSI）的下一代的關鍵技術挑戰。形成高深寬比的一個方法為使用電漿輔助的蝕刻處理以在基板的材料層（例如，介電層）中形成高深寬比開口。在通常的電漿輔助蝕刻處理中，電漿形成於處理腔室中，且來自電漿的離子朝向基板及在其遮罩中形成的開口加速，以在遮罩表面下方的材料層中形成開口。
通常，藉由將在400kHz至2MHz的範圍中的低頻率RF功率耦合至基板而加速離子朝向基板，藉此在基板上建立偏壓。然而，將RF功率耦合至基板相對於電漿不會對基板施加單一電壓。在通常使用的配置中，介於基板及電漿之間的電位差從接近零的值至RF功率的頻率下最大負的值震盪。缺乏單一電位，從電漿加速離子至基板導致大範圍的離子能量在基板表面處及在材料層中形成的開口（特徵）中。此外，從RF偏壓得到不同離子的軌跡產生相對於基板表面的離子的大角度分佈。當蝕刻高深寬比特徵的開口時，大範圍的離子能量為非所欲的，因為離子無法以足夠高的能量到達特徵的底部來維持所欲的蝕刻率。大角度分佈的離子相對於基板表面為非所欲的，因為此舉導致特徵輪廓的變形，例如在其垂直側壁中的縮頸及彎曲。
因此本領域中需要在電漿輔助蝕刻處理期間在基板的材料表面處提供具有低角度分佈的高能量離子的窄範圍的能力。
本揭露案大致關於電漿輔助或電漿強化的處理腔室。更具體而言，此處的實施例關於靜電夾持（ESC）基板支撐件，配置成在電漿輔助或電漿強化的半導體製造處理期間，提供脈衝DC電壓至其上佈置的基板，及提供脈衝DC電壓至基板的方法。
在一個實施例中，提供一種基板支撐組件。基板支撐組件包括基板支撐件，以介電材料形成，其中基板支撐件的介電材料具有穿過其形成的第一直徑的複數個開口。該基板支撐件進一步包括同心地佈置於表面且靠近邊緣的密封唇部，其中當基板夾持至基板支撐件時，基板支撐件的表面及密封唇部界定氣室。此處，基板支撐件具有電極平面地佈置在基板支撐件中且平行於基板支撐件的表面。基板支撐組件進一步包括複數個傳導銷，其中各個傳導銷穿過複數個開口的相對應開口而佈置。各個傳導銷具有小於複數個開口的第一直徑的第二直徑。各個分別的傳導銷及開口界定通道，且氣室及通道形成氣體容積。
在另一實施例中，提供一種用於處理基板之方法。方法包括將第一氣體流至處理腔室中；從第一氣體形成電漿；且將基板電氣夾持至佈置於處理腔室中的基板支撐件。方法進一步包括使用穿過複數個開口而佈置且延伸超過介電材料的表面的複數個傳導銷，以第一脈衝DC電壓對基板進行偏壓，其中各個分的傳導銷及開口界定通道。方法進一步包括提供第二氣體至通道。
在另一實施例中，提供一種處理腔室。處理腔室包括一或更多側壁及底部，界定處理容積；及基板支撐組件，佈置於處理容積中。基板支撐組件包括傳導底座，以一導電材料形成。基板支撐件，熱耦合至傳導底座，且包括具有複數個開口形成於其中的介電材料，及平面地佈置於基板支撐件的介電材料中的電極。基板支撐組件進一步包括複數個傳導銷，其中各個銷穿過形成於基板支撐件的介電材料中的開口之一者而佈置，且各個分別的銷及開口在其中界定通道。基板支撐組件的各個銷延伸超過基板支撐件的介電材料的表面，且電氣耦合至傳導底座。在某些實施例中，處理腔室進一步包括電漿產生裝置，包含電容耦合電漿（CCP）源或電感耦合電漿（ICP）源，而電氣耦合至RF電源供應器。舉例而言，在一個實施例中，電漿產生裝置包含佈置於處理容積面向基板支撐件的電漿電極，及配置成將電漿電極耦合至RF電源供應器的功率導管。在其他實施例中，電漿產生裝置包含微波電漿源，例如電子迴旋共振電漿（ECR）源或線性微波電漿源（LPS），及配置成將微波電漿源電氣耦合至微波電源供應器的功率導管。
此處所述的實施例大致關於電漿輔助或電漿強化的處理腔室。更具體而言，此處的實施例關於靜電夾持（ESC）基板支撐件，配置成提供脈衝DC電壓至基板，及在電漿輔助或電漿強化的半導體製造處理期間，提供脈衝DC電壓至基板之方法。
此處所述的實施例透過導電銷直接提供脈衝DC功率至基板，此等導電銷穿過基板支撐件而佈置，且延伸超過基板支撐件的表面。直接放置在及/或直接接觸傳導銷的基板保持在適當位置中用於藉由安裝在基板支撐件中的電極所提供的靜電夾持力來處理。通常，運行通過傳導銷的DC電流透過阻抗耗損而加熱傳導銷。因此，此處所述的傳導銷及基板支撐件配置成使用諸如氦氣的氣體維持傳導銷在所欲的溫度，此氣體可提供至基板支撐件的表面。
第1A圖根據一個實施例，為處理腔室100的概要剖面視圖，具有靜電夾持（ESC）基板支撐組件160佈置於其中。在此實施例中，處理腔室100為電漿處理腔室，例如電漿蝕刻腔室、電漿強化的沉積腔室，舉例而言電漿強化的化學氣相沉積（PECVD）腔室或電漿強化的原子層沉積（PEALD）腔室、電漿製程腔室、或基於電漿的離子佈植腔室，例如電漿摻雜（PLAD）腔室。
此處，所述的處理腔室100為PECVD處理腔室的概要代表，包含電容耦合電漿（ICP）產生裝置。處理腔室100的特徵為界定處理容積120的腔室蓋103、一或更多側壁102及腔室底部104。具有複數個開口118佈置於其中的噴淋頭112佈置在腔室蓋103中，且用以從氣體入口114均勻地分配處理氣體至處理容積120中。噴淋頭112耦合至RF電源供應器142，或在某些實施例中為VHF電源供應器，而從處理氣體透過其中的電容耦合點燃電漿135。在其他實施例中，電漿產生裝置包含電氣耦合至RF電源供應器的電感耦合電漿（ICP）源或微波電漿源，例如電子迴旋共振電漿（ECR）源或線性微波電漿源（LPS），而電氣耦合至微波電源供應器。
處理容積120透過真空出口113流體耦合至真空，例如一或更多所描繪的真空幫浦，而將處理容積120維持在次大氣壓條件下，且從此處排空處理及其他氣體。佈置於處理容積120中的基板支撐組件160佈置在密封地延伸穿過腔室底部104的支撐桿124上。支撐桿124耦合至抬升及下降支撐桿124以及佈置於其上的基板支撐組件160的控制器140，以促進基板115的處理且傳送基板115進出處理腔室100。通常，當基板支撐組件160在抬升的或處理位置中時，基板115與噴淋頭112隔開約0.2英吋及2.0英吋之間，例如約1.25英吋。
基板115透過在一或更多側壁102之一者中的開口126裝載至處理容積120中，此開口在基板115的處理期間傳統上以門或閥（未顯示）密封。佈置於舉升銷箍134上方的複數個舉升銷136可移動地佈置穿過基板支撐組件160，以促進基板115進出的傳送。舉升銷箍134耦合至密封地延伸穿過腔室底部的舉升箍桿131，此舉升箍桿131藉由致動器130的方式抬升及降低舉升銷箍134。當舉升銷箍134在抬升的位置中時，複數個舉升銷136在基板支撐件127的表面上方延伸，由此抬升基板115且使得基板115能夠藉由機械手臂處置器提取。當舉升銷箍134在降低的位置中時，複數個舉升銷136與基板支撐件127的表面齊平或更低，且基板115放置在透過此延伸的複數個傳導銷138上。
此處的基板支撐組件160包括傳導底座125、熱耦合至且佈置於傳導底座125上的基板支撐件127及透過基板支撐件127電氣耦合至傳導底座125的複數個傳導銷138。基板支撐組件160的傳導底座125用以在處理期間調節基板支撐件127及佈置於其上的基板115的溫度，且提供脈衝DC功率至複數個傳導銷。此處，傳導底座125包括佈置於其中的一或更多流體導管137，而流體耦合至且與諸如製冷源或水源的冷卻劑源133流體連通。傳導底座125為抗腐蝕導電且導熱材料的形式，例如抗腐蝕金屬，例如鋁、鋁合金或不銹鋼。基板支撐件127通常以介電材料形成，例如陶瓷材料，例如Al2 O3 、AlN、Y2 O3 或其結合。此處的基板支撐件127以黏著劑或藉由適合的機械構件熱耦合且固定耦合至傳導底座125。
基板支撐組件160提供用於偏壓基板115且將基板115夾持至此。基板115藉由與複數個傳導銷138直接電氣接觸而偏壓。複數個傳導銷138穿過基板支撐件127佈置且電氣耦合至傳導底座125。通常，複數個傳導銷138以抗腐蝕導電材料形成，例如鋁、鋁合金、碳化矽或其結合。
此處，傳導底座125電氣耦合至佈置於脈衝DC架150中的偏壓控制器152，偏壓控制器152包括電氣耦合至第一DC電源供應器156的固態脈衝器/切換器。第一DC電源供應器156提供介於約0kV及約10kV之間的高電壓（HV）DC功率，且偏壓控制器152透過固態脈衝器/切換器將HV DC功率轉換成具有介於約10Hz及約100kHz之間的頻率的循環脈衝DC電壓，例如介於約500Hz及約10kHz之間。循環脈衝DC電壓透過直接的電氣連接提供脈衝DC偏壓至基板115。
ESC電極122電氣耦合至佈置於脈衝DC架150中的電氣浮動電壓源154。電氣浮動電壓源154電氣耦合至對此提供參考電壓的偏壓控制器152。電氣浮動電壓源154包括對ESC電極122提供夾持電壓的第二DC電源供應器158。第二DC電源供應器158從偏壓控制器152在脈衝DC電壓上電氣浮動，以在提供至ESC電極122而安裝在基板支撐件127中的DC夾持電壓及提供至基板115的脈衝DC電壓（參考電壓）之間提供恆定電壓差。此處，ESC電壓高於脈衝DC電壓約0V及約500V之間，例如介於約500V及約4500V之間，例如介於約1000V及約3000V之間，例如約2500V。
基板115在處理期間直接接觸及/或放置在複數個傳導銷138上。在一個實施例中，複數個傳導銷138包括固定耦合至基板支撐組件160的複數個銷，而在基板支撐表面128的介電材料上方延伸介於約1µm及約10µm之間的第一距離G1 ，例如介於約3µm及約7µm，例如約5µm。以第一距離G1 與基板支撐表面128間隔開來的基板115藉由安裝在基板支撐件127的介電材料中的ESC電極122所提供的夾持力穩固地保持至複數個傳導銷138。此處，ESC電極122包含一或更多連續導電材料部分，例如沿著平行於基板支撐表面128的平面而平面地佈置的網格、箔片、環或板。ESC電極122藉由導電材料部分中的開口，且藉由佈置於ESC電極及複數個傳導銷138之間的基板支撐件的介電材料與複數個傳導銷電氣隔絕。此處的ESC電極藉由介於約100µm及約300µm之間的第二距離G2 而與基板支撐表面128隔開。
在處理期間，基板115的離子衝擊將加熱基板115至非所欲的高溫，而處理容積120的低壓導致基板115及基板支撐表面128之間的不良熱條件。再者，流動通過複數個傳導銷138的DC電流造成其非所欲的加熱，且造成與其接觸的基板115阻抗耗損。因此，在此處的實施例中，基板支撐組件160配置成提供氣體至介於基板115、複數個傳導銷138及基板支撐件127的介電材料之間的氣體容積123。此處，氣體容積123包含氣室123A及與氣室123A連通的複數個冷卻通道123B。氣室123A藉由基板支撐表面128、同心佈置於基板支撐表面128且靠近其周圍的密封唇部128A、及夾持至基板支撐件127的基板115而界定。通常，密封唇部128A以基板支撐件127的介電材料形成。
複數個冷卻通道123B之各者分別藉由在基板支撐件127的介電材料及複數個傳導銷138之一者中所形成的開口來界定。通常為鈍氣導熱氣體，諸如氦氣的氣體藉由透過傳導底座125佈置的氣體導管147而提供至氣體容積123。氣體導管147流體耦合至且與氣源146流體連通。氣體將基板115及複數個傳導銷138熱耦合至基板支撐件127的傳導底座125，以增加之間的熱傳輸。通常，在氣體容積123中的氣體壓力介於約1 Torr及約100 Torr之間，例如介於約1 Torr及約20 Torr之間。在其他實施例中，背側導管147進一步透過基板支撐件127佈置，且提供氣體通過形成於基板支撐表面128中的開口。在某些實施例中，基板支撐組件160進一步包括流體耦合至氣體容積123的幫浦通道（未顯示），且配置成提供氣流通過氣體容積123且透過對流熱傳輸冷卻基板115及基板支撐組件160的表面。
第1B圖為第1A圖中所顯示的基板支撐組件160的頂部俯視圖。第1C圖為第1B圖中所顯示基板支撐件127的部分的放大頂部俯視剖面視圖。如第1C圖中所顯示，形成於基板支撐件127的介電材料中的開口具有大於傳導銷138的第二直徑D2 的第一直徑D1 ，界定冷卻通道123B的通道寬度W。此處的通道寬度W介於約0.1mm及約5mm之間，例如介於約0.1mm及約4mm之間，例如介於約1mm及約3mm之間，例如約2mm。
第1D圖根據一個實施例，為第1A-1C圖中所顯示的複數個傳導銷138之一者的部分的立體圖。此處，傳導銷138具有圓頂的銷頭138A及銷桿138B。銷頭138A的圓頂形狀提供與基板的物理接觸，而不會危及受到尖的邊緣刮傷。在其他實施例中，銷頭138A為實質上平坦的具有導角邊緣。在某些實施例中，銷桿138B進一步包括以橫向延伸的形狀組成的表面特徵，例如從其縱向外部表面延伸的複數個突起138C。當氣體行進在銷桿138B的縱向表面上介於複數個傳導銷138及基板支撐件127的傳導底座125之間時，複數個突起138C在傳導銷138及/或氣體的湍流上提供增加的表面積，以增加之間的傳導及/或對流熱傳輸。此處的表面特徵以形成在傳導銷138的表面上的突起（凸塊）及其他突出物組成。在某些實施例中，表面特徵與傳導銷138同時且以相同材料形成，例如在鑄造處理中。在其他實施例中，表面特徵透過沉積處理形成在傳導銷138上，例如物理氣相沉積處理、CVD處理、電鍍處理或任何其他適合的處理用於修改傳導銷的表面及/或在其上形成材料層。通常，突起138C以與傳導銷138相同的材料形成，例如鋁、鋁合金或碳化矽，且包含任何適合的形狀。在某些實施例中，表面特徵為突出物，例如矩形柱（顯示於第1F圖中）或其他柱，例如橢圓形、方形、矩形、三角形、多邊形、不規則形狀或其結合。在其他實施例中，用於增加傳導銷的表面積及/或提供湍流氣流通過複數個冷卻通道123B的表面特徵包含銷桿138B的粗糙的外部表面。在其他實施例中，銷頭138A具有平坦的表面。在某些實施例中，複數個傳導銷138上不具有表面特徵。
第1E-1F圖根據其他實施例，為傳導銷的部分的立體圖。在第1E圖中，傳導銷148包括銷桿148B，具有複數個突起148C從其縱向外部表面延伸，及銷頭148A，佈置於銷桿148B上，銷頭148A具有漸細的側及大於銷桿138B的第二直徑D2 的接觸表面直徑D3 。銷頭148A膨脹的形狀提供傳導銷148及基板之間的寬的接觸面積。在某些實施例中，銷頭148A的邊緣為圓形的，以降低刮傷佈置於其上的基板的機會。在第1F圖中，傳導銷178包括銷桿178B，具有複數個矩形形狀的突出物178C從其縱向外部表面延伸，及銷頭178A，佈置於銷桿178B上，銷頭具有圓柱形形狀，及大於銷桿178B的第二直徑D2 的接觸表面直徑D3 。在其他實施例中，形成傳導銷138、148或178以具有湍流化形狀，例如螺紋形狀、螺旋形狀、波形形狀或隨機波動形狀。
在某些實施例中，表面特徵形成於基板支撐件127中的開口的內部表面（內壁）上，而與複數個傳導銷138一起界定複數個冷卻通道123B。此處，在基板支撐件127中形成於或為開口的內壁上的表面特徵以從其表面延伸的突起組成、從其表面延伸的突出物組成、內壁表面的粗糙物組成，形成內壁以具有湍流形狀，例如螺旋的內壁表面或波動的內壁表面，或其結合。
第1G圖根據另一實施例，為佈置於基板支撐組件的部分中的傳導銷的剖面視圖。在此實施例中，傳導銷138佈置於傳導彈性元件129上，定位在傳導銷138之間且耦合至傳導底座125。當電氣夾持至基板支撐件127時，基板115推擠傳導銷138朝向傳導底座125。基板115直接放置在佈置於基板支撐表面128的複數個台面128B上，且傳導彈性元件129對傳導銷138提供向上力而維持與基板115的接觸。此處，複數個突起138C將傳導銷138置中於冷卻通道123B中，且當基板115與其接觸時傳導銷138維持約垂直的。通常，基板115藉由以基板支撐件127的介電材料形成的複數個台面128B與基板支撐表面128隔開一距離G1 。在某些實施例中，複數個台面128B藉由紋路化基板支撐表面128而形成，使得介於基板支撐表面128及基板115之間的接觸面積小於基板115的表面面積，以允許氣體至界定於之間的氣室123中。
第2A圖圖示例如第2B圖中所顯示循環DC電壓186的循環DC電壓，藉由例如第1A圖中所顯示的偏壓控制器152的偏壓控制器來提供，其中循環DC電壓186在T的循環時間中從0伏特循環至-V0 。第2B圖圖示ESC DC電壓188在循環DC電壓186上電氣浮動。在第2B圖中，提供至複數個傳導銷及佈置於其上的基板的循環DC電壓186以1kHz的頻率在約0V及約-1000V之間循環。ESC DC電壓188藉由耦合至約500V的靜態DC電源供應器的ESC控制器提供。ESC DC電壓188在循環DC電壓186上電氣浮動，藉此在基板及ESC電極之間提供約500V的恆定電位，且藉此在之間提供恆定夾持力。
第3圖根據此處所述的實施例，為流程圖圖示在電漿輔助的處理期間偏壓基板之方法300。於310處，方法300包括將處理氣體流至處理腔室中，且於320處，方法300包括從處理氣體形成電漿。
於330處，方法300包括將基板電氣夾持至基板支撐件，例如第1圖中所述的基板支撐件127。夾持力藉由平面佈置而平行於基板支撐表面，且安裝在基板支撐件的介電材料中的ESC電極提供。ESC電極耦合至ESC功率，而在用以偏壓基板的脈衝DC電源供應器上電氣浮動。在一個實施例中，恆定電氣浮動DC夾持電壓介於約0V及約5000V之間，例如介於約500V及約4500V之間，例如介於約1000V及約3000V之間，例如約2500V。此處，基板支撐件以介電材料形成，具有穿過其形成的複數個開口，複數個開口具有第一直徑。
在340處，方法300包括使用複數個傳導銷偏壓基板，各個傳導銷穿過複數個開口的相對應開口而佈置。複數個傳導銷之各者延伸超過介電材料的表面，且基板與傳導銷直接電氣接觸。此處，複數個傳導銷之各者具有小於複數個開口的相對應開口的第一直徑的第二直徑，使得各個分別的傳導銷及開口界定通道。
於350處，方法300包括透過與其流體連通的氣體導管，提供例如氦氣的化學鈍氣熱傳導氣體至複數個通道之一或更多者。在某些實施例中，複數個傳導銷包含一或更多表面特徵，用於湍流通過通道的氣流，藉此增加傳導銷及基板支撐件的介電材料之間的熱傳輸。在其他實施例中，一或更多表面特徵形成在複數個開口之一或更多者的內壁上及/或中。應理解亦可在操作320之後、操作330之後、操作340之後或操作350之後形成電漿。
此處所述的基板支撐組件及方法獲得在電漿輔助處理期間基板的直接脈衝DC偏壓，而與靜電夾持力的使用相容。脈衝DC偏壓允許增加離子能量的控制且在基板表面處及其中形成的特徵開口中的角度分佈。此增加的控制至少在形成高深寬比特徵中及/或需要直線蝕刻輪廓的其他特徵為所欲的，例如用於記憶體設備的介電材料中的高深寬比蝕刻，包括非揮發性快閃記憶設備、動態隨機存取記憶設備，及在淺溝槽隔離（STI）應用的矽蝕刻中或用以形成FinFET設備中所使用的矽鰭片。
儘管以上導向本揭露案的實施例，可衍生出本揭露案的其他及進一步實施例而不會悖離其基本範疇，且本揭露案的範疇藉由以下的申請專利範圍決定。
100‧‧‧處理腔室
102‧‧‧側壁
103‧‧‧腔室蓋
112‧‧‧噴淋頭
113‧‧‧真空出口
114‧‧‧氣體入口
115‧‧‧基板
118‧‧‧開口
120‧‧‧處理容積
122‧‧‧ESC電極
123A‧‧‧氣室
123B‧‧‧冷卻通道
123‧‧‧氣體容積
124‧‧‧支撐桿
125‧‧‧傳導底座
126‧‧‧開口
127‧‧‧基板支撐件
128A‧‧‧密封唇部
128B‧‧‧台面
128‧‧‧基板支撐表面
129‧‧‧傳導彈性元件
130‧‧‧致動器
131‧‧‧舉升箍桿
133‧‧‧冷卻劑源
134‧‧‧舉升銷箍
135‧‧‧電漿
136‧‧‧舉升銷
137‧‧‧流體導管
138A‧‧‧銷頭
138B‧‧‧銷桿
138C‧‧‧突起
138‧‧‧傳導銷
140‧‧‧控制器
142‧‧‧RF電源供應器
146‧‧‧氣源
147‧‧‧氣體導管
148A‧‧‧銷頭
148B‧‧‧銷桿
148C‧‧‧突起
148‧‧‧傳導銷
150‧‧‧脈衝DC架
152‧‧‧偏壓控制器
154‧‧‧電氣浮動電壓源
156‧‧‧第一DC電源供應器
158‧‧‧第二DC電源供應器
160‧‧‧基板支撐組件
178A‧‧‧銷頭
178B‧‧‧銷桿
178C‧‧‧矩形形狀的突出物
178‧‧‧傳導銷
186‧‧‧循環DC電壓
188‧‧‧ESC DC電壓
300‧‧‧方法
310-350‧‧‧步驟
以上本揭露案所載特徵可以此方式而詳細理解，以上簡要概述的本揭露案的更具體說明可藉由參考實施例而獲得，某些實施例圖示於隨附圖式中。應理解隨附圖式僅圖示本揭露案的通常實施例，且因此不應考慮為其範疇的限制，因為本揭露案認可其他均等效果的實施例。
第1A圖根據一個實施例，為具有靜電夾持（ESC）基板支撐件的處理腔室的概要剖面視圖，其中具有傳導銷佈置於其中。
第1B圖為第1A圖中所顯示基板支撐組件的頂部俯視圖。
第1C圖為第1B圖中所顯示基板支撐件的部分的放大頂部俯視剖面視圖。
第1D圖根據一個實施例，為傳導銷的部分的立體圖。
第1E-1F圖根據其他實施例，為傳導銷的部分的立體圖。
第1G圖根據另一實施例，為佈置於基板支撐組件的部分中的傳導銷的剖面視圖。
第2A-2B圖圖示藉由第1A圖的脈衝DC架所提供的循環DC電壓及電氣浮動ESC夾持電壓。
第3圖根據此處所述的實施例為流程圖，圖示電漿輔助或電漿強化處理期間偏壓基板之方法。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無

Claims (20)

  1. 一種基板支撐組件，包含： 一基板支撐件，以一介電材料形成，該介電材料具有穿過其形成的一第一直徑的複數個開口，該基板支撐件包含同心地佈置於一表面且靠近一邊緣的一密封唇部，其中當一基板夾持至該基板支撐件時，該基板支撐件的該表面及該密封唇部界定一氣室，且一電極平面地佈置在該基板支撐件中且平行於該基板支撐件的該表面；及複數個傳導銷，各個傳導銷穿過該複數個開口的一相對應開口而佈置，且具有小於該第一直徑的一第二直徑，其中各個分別的傳導銷及開口界定一通道，且其中該氣室及該等通道形成一氣體容積。
  2. 如請求項1所述之基板支撐組件，進一步包含一傳導底座，熱耦合至該基板支撐件。
  3. 如請求項2所述之基板支撐組件，進一步包含穿過該傳導底座而佈置的一氣體導管，用於提供一氣體至該氣體容積，其中該氣體導管與該氣體容積流體連通。
  4. 如請求項1所述之基板支撐組件，其中該電極為一傳導網格、箔片或板。
  5. 如請求項1所述之基板支撐組件，其中該電極與該複數個傳導銷電氣隔絕。
  6. 如請求項2所述之基板支撐組件，其中該傳導底座包含一導電材料。
  7. 如請求項6所述之基板支撐組件，其中該複數個傳導銷電氣耦合至該傳導底座。
  8. 如請求項1所述之基板支撐組件，其中該複數個傳導銷之一或更多者具有佈置於其一外表面上的一表面特徵，該表面特徵以複數個突起、複數個突出物、一粗糙的外部表面或其結合而組成。
  9. 如請求項7所述之基板支撐組件，其中該等傳導銷之各者佈置在或耦合至一彈性元件，該彈性元件佈置於該基板支撐組件中。
  10. 如請求項7所述之基板支撐組件，其中該複數個傳導銷之一或更多者固定地耦合至該基板支撐組件，且延伸超過該基板支撐件的該表面約1µm及約10µm之間。
  11. 如請求項4所述之基板支撐組件，進一步包含穿過該傳導底座佈置的一幫浦導管，與該氣體容積流體連通，以形成一氣體排空路徑。
  12. 一種用於處理一基板之方法，包含以下步驟： 將一第一氣體流至該處理腔室中；從該第一氣體形成一電漿；將一基板電氣夾持至佈置於一處理腔室中的一基板支撐件，該基板支撐件包含具有複數個開口形成於其中的一介電材料；使用穿過該複數個開口而佈置且延伸超過該介電材料的一表面的複數個傳導銷，以一第一脈衝DC電壓對該基板進行偏壓，其中各個分的傳導銷及開口界定一通道；及提供一第二氣體至該等通道。
  13. 如請求項12所述之方法，其中將該基板電氣夾持至該基板支撐件的步驟包含以下步驟：提供一靜態DC功率以產生提供至一夾持電極的一第二脈衝DC電壓，該夾持電極平面地佈置於該基板支撐件中，其中第一脈衝DC電壓及該第二脈衝DC電壓之間的差為一恆定夾持電壓。
  14. 如請求項12所述之方法，其中該等傳導銷之一或更多者具有佈置於其一外表面上的一表面特徵。
  15. 如請求項12所述之方法，其中該等開口之一或更多者具有在其一內壁上的一表面特徵。
  16. 一種處理腔室，包含： 一或更多側壁及一底部界定一處理容積；及一基板支撐組件，佈置於該處理容積中，包含：一傳導底座，以一導電材料形成；一基板支撐件，熱耦合至該傳導底座，該基板支撐件包含具有複數個開口形成於其中的一介電材料，及平面地佈置於該基板支撐件的該介電材料中的一電極；及複數個傳導銷，各個銷穿過該等開口之一者而佈置，各個分別的銷及開口在其中界定一通道，其中各個銷延伸超過該介電材料的一表面，且電氣耦合至該傳導底座。
  17. 如請求項16所述之處理腔室，進一步包含穿過該傳導底座而佈置的一氣體導管，用於提供一氣體至該等通道，其中該氣體導管與該等通道流體連通。
  18. 如請求項17所述之處理腔室，其中該電極與該等傳導銷電氣隔絕。
  19. 如請求項18所述之處理腔室，其中該等傳導銷之一或更多者具有一表面積增加特徵，該表面積增加特徵以一橫向延伸的形狀、佈置於該一或更多傳導銷的外部表面上的一或更多表面特徵、或其結合而組成。
  20. 如請求項16所述之處理腔室，其中該複數個傳導銷之一或更多者包含選自以下構成之群組的一材料：鋁、一鋁合金、碳化矽及其結合。
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