JP6845730B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- JP6845730B2 JP6845730B2 JP2017081911A JP2017081911A JP6845730B2 JP 6845730 B2 JP6845730 B2 JP 6845730B2 JP 2017081911 A JP2017081911 A JP 2017081911A JP 2017081911 A JP2017081911 A JP 2017081911A JP 6845730 B2 JP6845730 B2 JP 6845730B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor wafer
- diffusing plate
- light diffusing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims description 110
- 239000000758 substrate Substances 0.000 claims description 75
- 230000002093 peripheral effect Effects 0.000 claims description 41
- 230000001678 irradiating effect Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 description 168
- 229910052736 halogen Inorganic materials 0.000 description 61
- 150000002367 halogens Chemical class 0.000 description 61
- 238000012546 transfer Methods 0.000 description 53
- 239000007789 gas Substances 0.000 description 41
- 230000007246 mechanism Effects 0.000 description 34
- 239000010453 quartz Substances 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 238000009826 distribution Methods 0.000 description 25
- 239000012535 impurity Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- 238000012545 processing Methods 0.000 description 15
- 230000005855 radiation Effects 0.000 description 15
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 12
- 229910052724 xenon Inorganic materials 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 230000004913 activation Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
- G02B5/0215—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having a regular structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
- G02B5/0231—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having microprismatic or micropyramidal shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
図1は、本発明に係る熱処理装置1の構成を示す縦断面図である。図1の熱処理装置1は、基板として円板形状の半導体ウェハーWに対してフラッシュ光照射を行うことによってその半導体ウェハーWを加熱するフラッシュランプアニール装置である。処理対象となる半導体ウェハーWのサイズは特に限定されるものではないが、例えばφ300mmやφ450mmである(本実施形態ではφ300mm)。熱処理装置1に搬入される前の半導体ウェハーWには不純物が注入されており、熱処理装置1による加熱処理によって注入された不純物の活性化処理が実行される。なお、図1および以降の各図においては、理解容易のため、必要に応じて各部の寸法や数を誇張または簡略化して描いている。
次に、本発明の第2実施形態について説明する。第2実施形態の熱処理装置1の全体構成は第1実施形態と概ね同じである。また、第2実施形態の熱処理装置1における半導体ウェハーWの処理手順も第1実施形態と同様である。第2実施形態が第1実施形態と相違するのは、光拡散板の形態である。
次に、本発明の第3実施形態について説明する。第3実施形態の熱処理装置1の全体構成は第1実施形態と概ね同じである。また、第3実施形態の熱処理装置1における半導体ウェハーWの処理手順も第1実施形態と同様である。第3実施形態が第1実施形態と相違するのは、光拡散板の形態である。
次に、本発明の第4実施形態について説明する。第4実施形態の熱処理装置1の全体構成は第1実施形態と概ね同じである。また、第4実施形態の熱処理装置1における半導体ウェハーWの処理手順も第1実施形態と同様である。第4実施形態が第1実施形態と相違するのは、光拡散板の形態である。
次に、本発明の第5実施形態について説明する。第5実施形態の熱処理装置1の全体構成は第1実施形態と概ね同じである。また、第5実施形態の熱処理装置1における半導体ウェハーWの処理手順も第1実施形態と同様である。第5実施形態が第1実施形態と相違するのは、光拡散板の形態である。
以上、本発明の実施の形態について説明したが、この発明はその趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。例えば、光拡散板に形設する凹状または凸状の曲面の個数は、特に限定されるものではなく、適宜の数とすることができる。但し、曲面が1個のみであると、上記各実施形態のような光拡散効果を得るためには、光拡散板自体の板厚を相当に厚くする必要があり、光拡散板によって光が吸収されてエネルギー効率が低下するおそれがある。このため、光拡散板には複数の凹状または凸状の曲面を設けるようにする。
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
90,290,390,490,590 光拡散板
91,291,391 凹面
491,591 凸面
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (3)
- 基板に光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて前記基板を保持する保持部と、
前記チャンバーの一方側に設けられ、前記保持部に保持された前記基板に光を照射する光照射部と、
前記保持部と前記光照射部との間に設けられ、前記基板よりも小さな平面サイズを有する光拡散板と、
を備え、
前記光拡散板は、前記光拡散板の中心軸と前記保持部に保持された前記基板の中心軸とが一致するように設けられ、
前記光拡散板には、複数の凹状の曲面が形設され、
前記曲面は球面であり、
前記球面の曲率半径は、前記光拡散板の中心から周縁部に向けて大きくなることを特徴とする熱処理装置。 - 基板に光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて前記基板を保持する保持部と、
前記チャンバーの一方側に設けられ、前記保持部に保持された前記基板に光を照射する光照射部と、
前記保持部と前記光照射部との間に設けられ、前記基板よりも小さな平面サイズを有する光拡散板と、
を備え、
前記光照射部は、平面状に配列した複数のフラッシュランプを有し、
前記複数のフラッシュランプが配列される領域は前記基板の平面サイズよりも大きく、
前記光拡散板は、前記光拡散板の中心軸と前記保持部に保持された前記基板の中心軸とが一致するように設けられ、
前記光拡散板には、曲率半径が同一の複数の凹状の球面が均等な密度で形設されることを特徴とする熱処理装置。 - 基板に光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて前記基板を保持する保持部と、
前記チャンバーの一方側に設けられ、前記保持部に保持された前記基板に光を照射する光照射部と、
前記保持部と前記光照射部との間に設けられ、前記基板よりも小さな平面サイズを有する光拡散板と、
を備え、
前記光照射部は、平面状に配列した複数のフラッシュランプを有し、
前記複数のフラッシュランプが配列される領域は前記基板の平面サイズよりも大きく、
前記光拡散板は、前記光拡散板の中心軸と前記保持部に保持された前記基板の中心軸とが一致するように設けられ、
前記光拡散板には、曲率半径が同一の複数の凸状の球面が均等な密度で形設されることを特徴とする熱処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017081911A JP6845730B2 (ja) | 2017-04-18 | 2017-04-18 | 熱処理装置 |
KR1020180043985A KR102121105B1 (ko) | 2017-04-18 | 2018-04-16 | 열처리 장치 |
TW107112869A TWI712088B (zh) | 2017-04-18 | 2018-04-16 | 熱處理裝置 |
TW109123131A TWI743876B (zh) | 2017-04-18 | 2018-04-16 | 熱處理裝置 |
US15/954,237 US20180301360A1 (en) | 2017-04-18 | 2018-04-16 | Light irradiation type heat treatment apparatus |
US17/516,212 US20220051915A1 (en) | 2017-04-18 | 2021-11-01 | Light irradiation type heat treatment apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017081911A JP6845730B2 (ja) | 2017-04-18 | 2017-04-18 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018182153A JP2018182153A (ja) | 2018-11-15 |
JP6845730B2 true JP6845730B2 (ja) | 2021-03-24 |
Family
ID=63790250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017081911A Active JP6845730B2 (ja) | 2017-04-18 | 2017-04-18 | 熱処理装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20180301360A1 (ja) |
JP (1) | JP6845730B2 (ja) |
KR (1) | KR102121105B1 (ja) |
TW (2) | TWI743876B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP6845730B2 (ja) * | 2017-04-18 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP7191504B2 (ja) * | 2017-07-14 | 2022-12-19 | 株式会社Screenホールディングス | 熱処理装置 |
KR102623544B1 (ko) * | 2019-06-10 | 2024-01-10 | 삼성전자주식회사 | 광 조사 기반 웨이퍼 세정 장치 및 그 세정 장치를 포함한 웨이퍼 세정 시스템 |
KR102263006B1 (ko) * | 2019-07-18 | 2021-06-10 | 세메스 주식회사 | 기판 처리 장치 |
JP2022045565A (ja) | 2020-09-09 | 2022-03-22 | 株式会社Screenホールディングス | 熱処理装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60161616A (ja) * | 1984-02-01 | 1985-08-23 | Matsushita Electric Ind Co Ltd | 半導体ウエハの赤外線加熱装置 |
JP2000349038A (ja) * | 1999-06-02 | 2000-12-15 | Kokusai Electric Co Ltd | 基板処理装置 |
JP2002064069A (ja) * | 2000-08-17 | 2002-02-28 | Tokyo Electron Ltd | 熱処理装置 |
JP2003031517A (ja) * | 2001-07-19 | 2003-01-31 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP3715228B2 (ja) * | 2001-10-29 | 2005-11-09 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP2004186495A (ja) * | 2002-12-04 | 2004-07-02 | Toshiba Corp | 半導体装置の製造装置、半導体装置の製造方法、および半導体装置 |
JP2006278802A (ja) * | 2005-03-30 | 2006-10-12 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
CN101408630A (zh) * | 2007-10-12 | 2009-04-15 | 鸿富锦精密工业(深圳)有限公司 | 背光模组及其棱镜片 |
KR101368818B1 (ko) * | 2012-05-03 | 2014-03-04 | 에이피시스템 주식회사 | 기판 처리 장치 |
JP6845730B2 (ja) * | 2017-04-18 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
-
2017
- 2017-04-18 JP JP2017081911A patent/JP6845730B2/ja active Active
-
2018
- 2018-04-16 TW TW109123131A patent/TWI743876B/zh active
- 2018-04-16 TW TW107112869A patent/TWI712088B/zh active
- 2018-04-16 KR KR1020180043985A patent/KR102121105B1/ko active IP Right Grant
- 2018-04-16 US US15/954,237 patent/US20180301360A1/en not_active Abandoned
-
2021
- 2021-11-01 US US17/516,212 patent/US20220051915A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
TW201842589A (zh) | 2018-12-01 |
US20180301360A1 (en) | 2018-10-18 |
TW202044412A (zh) | 2020-12-01 |
TWI743876B (zh) | 2021-10-21 |
KR102121105B1 (ko) | 2020-06-09 |
JP2018182153A (ja) | 2018-11-15 |
KR20180117053A (ko) | 2018-10-26 |
TWI712088B (zh) | 2020-12-01 |
US20220051915A1 (en) | 2022-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6837871B2 (ja) | 熱処理方法 | |
JP6845730B2 (ja) | 熱処理装置 | |
US20170140976A1 (en) | Heat treatment apparatus for heating substrate by irradiation with flash light | |
JP6837911B2 (ja) | 熱処理装置 | |
US10153184B2 (en) | Light irradiation type heat treatment apparatus | |
JP6864564B2 (ja) | 熱処理方法 | |
US11764100B2 (en) | Heat treatment susceptor and heat treatment apparatus | |
JP6622617B2 (ja) | 熱処理装置 | |
JP6138610B2 (ja) | 熱処理装置 | |
JP6960344B2 (ja) | 熱処理方法および熱処理装置 | |
JP7191504B2 (ja) | 熱処理装置 | |
JP6770915B2 (ja) | 熱処理装置 | |
JP2019021828A (ja) | 熱処理装置 | |
JP7319894B2 (ja) | 熱処理装置 | |
JP6847610B2 (ja) | 熱処理装置 | |
JP6982446B2 (ja) | 熱処理装置 | |
JP7032947B2 (ja) | 熱処理方法 | |
JP6814572B2 (ja) | 熱処理装置 | |
JP6899248B2 (ja) | 熱処理装置 | |
JP2022045565A (ja) | 熱処理装置 | |
US20170221736A1 (en) | Heat treatment susceptor and heat treatment apparatus | |
JP6791693B2 (ja) | 熱処理装置 | |
JP2021068780A (ja) | 熱処理装置 | |
JP2022106561A (ja) | 熱処理装置および熱処理方法 | |
JP2021077660A (ja) | サセプタの製造方法、サセプタおよび熱処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191223 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201020 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201027 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201126 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210224 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210226 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6845730 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |