JP6790172B2 - 相互レシピ整合性に基づくレシピ選択 - Google Patents
相互レシピ整合性に基づくレシピ選択 Download PDFInfo
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7069—Alignment mark illumination, e.g. darkfield, dual focus
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- G—PHYSICS
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- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Radar Systems Or Details Thereof (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
本出願は、2015年6月17日に出願された米国特許出願62/181,047号の優先権を主張し、その全体が参照により本書に援用される。
本発明は、メトロロジおよびリソグラフィの装置およびプロセスに関する。
[節17]
複数の基板測定レシピのそれぞれを用いてメトロロジデータを得ることと、
コンピュータを用いて、メトロロジデータから複数の基板測定レシピのそれぞれのためのパラメータを決定することであって、パラメータは基板測定レシピに用いられる入射光の角度分布へのメトロロジデータの依存性を特徴付けることと、
パラメータに基づいて複数の基板測定レシピから少なくとも1つの基板測定レシピを選択することと、
を備える方法。
[節18]
メトロロジデータは、オーバーレイ誤差、アライメント、または限界寸法を含む、節17に記載の方法。
[節19]
メトロロジデータは、複数の基板測定レシピの少なくとも1つに用いられるターゲットの像平面イメージの特性を含む、節17に記載の方法。
[節20]
メトロロジデータは、複数の基板測定レシピの少なくとも1つに用いられるターゲットの瞳面イメージの特性を含む、節17に記載の方法。
[節21]
パラメータは、固定されたアジマス角において入射光の入射角に対するメトロロジデータの派生物(derivative)である、節17から20のいずれかに記載の方法。
[節22]
パラメータを決定することは、徐々に異なる入射角を用いてメトロロジデータを得ることを備える、節21に記載の方法。
[節23]
パラメータは、アジマス角に関係なく入射光の入射角に対するメトロロジデータの派生物である、節17から20のいずれかに記載の方法。
[節24]
徐々に増える頂角を有する円錐表面に沿って伝播する光を用いてメトロロジデータを取得することを備える、節23に記載の方法。
[節25]
パラメータは、入射光の異なる角度分布を有する2つの基板測定レシピを用いて得られる2組のメトロロジデータ間の差である、節17から20のいずれかに記載の方法。
[節26]
複数の基板測定レシピのうち少なくとも1つは、一つの入射ビームを用いる、節17から25のいずれかに記載の方法。
[節27]
複数の基板測定レシピのうち少なくとも1つを用いて測定されるターゲットは、プロセス誘起ターゲット非対称性を有する、節17から26のいずれかに記載の方法。
[節28]
入射光の角度分布は、複数の基板測定レシピのうち少なくとも1つを用いて測定されるパターンのオリエンテーションに関連する、節17から27のいずれかに記載の方法。
[節29]
選択された基板測定レシピを用いて基板を検査することをさらに備える、節17から28のいずれかに記載の方法。
[節30]
命令が記録されたコンピュータ読取可能媒体を含むコンピュータプログラム製品であって、命令はコンピュータが節17から29のいずれかに記載の方法を実施することによって実行される、コンピュータプログラム製品。
−放射ビームBを調整する照明システムIL。この典型的なケースでは、照明システムは放射源SOも備える。
−パターニングデバイスMA(例えばレチクル)を保持するパターニングデバイスホルダが設けられ、アイテムPSに対してパターニングデバイスを正確に位置決めする第1位置決め装置PMに接続される第1オブジェクトテーブル(例えばマスクテーブル)MT。
−基板W(例えばレジストコートされたシリコンウェハ)を保持する基板ホルダが設けられ、アイテムPSに対して基板を正確に位置決めする第2位置決め装置PWに接続される第2オブジェクトテーブル(基板テーブル)WT。
−パターニングデバイスMAの照射部分を基板Wの(例えば一以上のダイを備える)ターゲット部分Cに結像する投影システムPS(例えば屈折光学系、反射光学系、反射屈折光学系)。
−ソースコレクタモジュールSO。
−放射ビームB(例えばEUV放射)を調整するよう構成される照明システム(イルミネータ)IL。
−パターニングデバイス(例えばマスクまたはレチクル)MAを支持するよう構築されるサポート構造(例えばマスクテーブル)MTであって、パターニングデバイスを正確に位置決めするよう構成される第1位置決め装置PMに接続されるサポート構造MT。
−基板(例えば、レジストで覆われたウェハ)Wを保持するよう構築される基板テーブル(例えばウェハテーブル)WTであって、基板を正確に位置決めするよう構成される第2位置決め装置PWに接続される基板テーブルWT。
−パターニングデバイスMAにより放射ビームBに付与されたパターンを基板Wの(例えば1つ以上のダイを備える)ターゲット部分Cに投影するよう構成される投影システム(例えば反射投影システム)PS。
−プログラマブルミラーアレイ。このようなデバイスの例は、粘弾性制御層及び反射面を持つマトリクス・アドレス指定可能面である。このような装置の背後にある基本原理は、(例えば)反射面のアドレス指定領域は入射放射を回折放射として反射するが、非アドレス指定領域は入射放射を非回折放射として反射するというものである。適切な空間フィルタを使用し、非回折放射を反射ビームから除去し、回折放射のみを残す。このようにして、ビームは、マトリクス・アドレス指定可能面のアドレス指定パターンに応じてパターン化される。必要なマトリクス・アドレス指定は、適切な電子的手段を用いて実行できる。このようなミラーアレイのさらなる情報は、例えば米国特許第5,296,891号明細書および米国特許第5,523,193号明細書から得られ、これらは参照することにより本明細書に援用される。
−プログラマブルLCDアレイ。このような構造の例は、米国特許第5,229,872号明細書により与えられ、これは参照することにより本明細書に援用される。
Claims (6)
- 複数の基板測定レシピのうち1つの基板測定レシピと、前記複数の基板測定レシピのうち他の各基板測定レシピとの間の相互レシピ整合性を、前記複数の基板測定レシピを用いて得られる基板上の複数の領域におけるオーバーレイ誤差または基板の相対位置の値から決定することと、
前記複数の基板測定レシピのそれぞれに関し、前記相互レシピ整合性の和を計算することと、
前記和が最大となった基板測定レシピを除外することと、
特定の数の基板測定レシピが残るまで、または、残っている基板測定レシピの前記和が特定の値を過ぎるまで、前記決定、前記計算および前記除外を繰り返すことと、
を備えることを特徴とする方法。 - 前記値は、前記領域からの回折放射を測定またはシミュレーションすることにより得られることを特徴とする請求項1に記載の方法。
- 前記値は、前記領域からの回折放射のうち2つの回折次数の振幅間の差を測定またはシミュレーションすることにより得られることを特徴とする請求項1または2に記載の方法。
- 前記領域のそれぞれは、ターゲット構造を備え、該ターゲット構造は既知のオーバーレイ誤差バイアスを有するオーバーレイ周期構造を備えることを特徴とする請求項1から3のいずれかに記載の方法。
- 前記複数の基板測定レシピは、前記値に到達するために測定またはシミュレーションに用いられる放射の波長、前記値に到達するために測定またはシミュレーションに用いられる放射の偏光、前記値に到達するために測定またはシミュレーションに用いられる前記領域内のターゲット、または前記値に到達するために測定またはシミュレーションに用いられる放射の入射角度、から選択される1つ以上のパラメータの点で異なることを特徴とする請求項1から4のいずれかに記載の方法。
- 前記複数の基板測定レシピのうち前記除外により残った基板測定レシピを用いて基板を検査することをさらに備えることを特徴とする請求項1から5のいずれかに記載の方法。
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US201562181047P | 2015-06-17 | 2015-06-17 | |
US62/181,047 | 2015-06-17 |
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US (3) | US10338484B2 (ja) |
EP (1) | EP3311224B1 (ja) |
JP (2) | JP6630369B2 (ja) |
KR (1) | KR102162234B1 (ja) |
CN (1) | CN107924137B (ja) |
IL (1) | IL256196B (ja) |
NL (1) | NL2016937A (ja) |
TW (1) | TWI689796B (ja) |
WO (1) | WO2016202695A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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