JP6777245B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6777245B2 JP6777245B2 JP2019553716A JP2019553716A JP6777245B2 JP 6777245 B2 JP6777245 B2 JP 6777245B2 JP 2019553716 A JP2019553716 A JP 2019553716A JP 2019553716 A JP2019553716 A JP 2019553716A JP 6777245 B2 JP6777245 B2 JP 6777245B2
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- 239000004065 semiconductor Substances 0.000 title claims description 191
- 230000002093 peripheral effect Effects 0.000 claims description 131
- 239000000758 substrate Substances 0.000 claims description 123
- 229910052751 metal Inorganic materials 0.000 claims description 80
- 239000002184 metal Substances 0.000 claims description 80
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
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- 238000000034 method Methods 0.000 claims description 6
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- 239000000969 carrier Substances 0.000 description 9
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- 229910052782 aluminium Inorganic materials 0.000 description 8
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- 229910045601 alloy Inorganic materials 0.000 description 5
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- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009751 slip forming Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 230000005484 gravity Effects 0.000 description 1
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- 239000005368 silicate glass Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 150000003609 titanium compounds Chemical class 0.000 description 1
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Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2009−135408号公報
[特許文献2] 特開2005−175425号公報
Claims (22)
- トランジスタ領域を有する半導体基板と、
前記半導体基板上に設けられたエミッタ電極と、
前記半導体基板の前記トランジスタ領域に設けられ、前記エミッタ電極と電気的に接続するダミー導電部を有する第1のダミートレンチ部と、
前記エミッタ電極と電気的に接続される第1のコンタクト部と
を備え、
前記トランジスタ領域における前記半導体基板は、
前記半導体基板の上面に設けられる第1導電型のベース領域 と、
前記ベース領域の直下に設けられる第2導電型のドリフト領域と、
前記第1のダミートレンチ部の長手部の端部と前記半導体基板の端部との間の前記ベース領域に設けられ、前記第1のコンタクト部により前記エミッタ電極と電気的に接続し、前記ベース領域よりキャリア濃度が高い第1導電型の半導体領域と
を有し、
前記長手部が延伸する第1方向と直交する第2方向における前記第1のコンタクト部の幅は、前記第1のダミートレンチ部の前記第2方向の幅よりも大きい半導体装置。 - トランジスタ領域を有する半導体基板と、
前記半導体基板上に設けられたエミッタ電極と、
前記半導体基板の前記トランジスタ領域に設けられ、前記エミッタ電極と電気的に接続するダミー導電部を有する第1のダミートレンチ部と、
前記エミッタ電極と電気的に接続される第1のコンタクト部と
を備え、
前記トランジスタ領域における前記半導体基板は、
前記半導体基板の上面に設けられる第1導電型のベース領域 と、
前記ベース領域の直下に設けられる第2導電型のドリフト領域と、
前記第1のダミートレンチ部の長手部の端部と前記半導体基板の端部との間の前記ベース領域に設けられ、前記第1のコンタクト部により前記エミッタ電極と電気的に接続し、前記ベース領域よりキャリア濃度が高い第1導電型の半導体領域と
を有し、
前記トランジスタ領域は、隣接する2個の前記第1のダミートレンチ部の間に位置する前記半導体基板の一部であるメサ部を有し、
前記長手部が延伸する第1方向と直交する第2方向における前記第1のコンタクト部の幅は、前記メサ部の前記第2方向の幅よりも大きい半導体装置。 - トランジスタ領域を有する半導体基板と、
前記半導体基板上に設けられたエミッタ電極と、
前記半導体基板の前記トランジスタ領域に設けられ、前記エミッタ電極と電気的に接続するダミー導電部を有する第1のダミートレンチ部と、
前記エミッタ電極と電気的に接続される第1のコンタクト部と
を備え、
前記トランジスタ領域における前記半導体基板は、
前記半導体基板の上面に設けられる第1導電型のベース領域 と、
前記ベース領域の直下に設けられる第2導電型のドリフト領域と、
前記第1のダミートレンチ部の長手部の端部と前記半導体基板の端部との間の前記ベース領域に設けられ、前記第1のコンタクト部により前記エミッタ電極と電気的に接続し、前記ベース領域よりキャリア濃度が高い第1導電型の半導体領域と
を有し、
前記第1のダミートレンチ部は、
第1方向に延伸する前記長手部と、
前記第1方向と直交する第2方向に延伸し、前記長手部の前記第1方向の端部において前記長手部と接続する短手部と
を含み、
前記第2方向における前記第1のコンタクト部の幅は、前記第1のダミートレンチ部の前記短手部における前記第2方向の幅よりも大きい半導体装置。 - 前記トランジスタ領域に設けられ、少なくとも前記短手部の前記ダミー導電部と電気的に接続するポリシリコン層である接続層をさらに備え、
前記第1のコンタクト部における前記第2方向の幅は、前記接続層における前記第2方向の幅よりも大きい
請求項3に記載の半導体装置。 - トランジスタ領域を有する半導体基板と、
前記半導体基板上に設けられたエミッタ電極と、
前記半導体基板の前記トランジスタ領域に設けられ、前記エミッタ電極と電気的に接続するダミー導電部を有する第1のダミートレンチ部と、
前記エミッタ電極と電気的に接続される第1のコンタクト部と
を備え、
前記トランジスタ領域における前記半導体基板は、
前記半導体基板の上面に設けられる第1導電型のベース領域 と、
前記ベース領域の直下に設けられる第2導電型のドリフト領域と、
前記第1のダミートレンチ部の長手部の端部と前記半導体基板の端部との間の前記ベース領域に設けられ、前記第1のコンタクト部により前記エミッタ電極と電気的に接続し、前記ベース領域よりキャリア濃度が高い第1導電型の半導体領域と
を有し、
前記第1のコンタクト部は、
前記第1のダミートレンチ部の前記長手部が延伸する第1方向と直交する第2方向に平行に延伸する主領域と、
前記主領域に接続し、前記主領域から前記第1のダミートレンチ部に向かう方向に延伸する副領域と
を含む、半導体装置。 - 前記第1のコンタクト部は、
1個の前記主領域と、
2個の前記副領域と
を有し、
2個の前記副領域は、
前記主領域の前記第2方向の第1の端部に接続し、前記第1のダミートレンチ部に向かう方向に延伸する、第1の副領域と、
前記主領域の前記第1の端部とは異なる前記第2方向の第2の端部に接続し、前記第1のダミートレンチ部に向かう方向に延伸する、第2の副領域と
である
請求項5に記載の半導体装置。 - トランジスタ領域と前記トランジスタ領域に隣接するダイオード領域とを有する半導体基板と、
前記半導体基板上に設けられたエミッタ電極と、
前記半導体基板の前記トランジスタ領域に設けられ、前記エミッタ電極と電気的に接続するダミー導電部を有する第1のダミートレンチ部と、
前記エミッタ電極と電気的に接続される第1のコンタクト部と、 前記ダイオード領域に設けられ、前記エミッタ電極と電気的に接続するダミー導電部を有する第2のダミートレンチ部と、
前記ダイオード領域の一部の領域であって、前記第2のダミートレンチ部の長手部の端部と前記半導体基板の端部との間の前記領域において、前記ダイオード領域に設けられた第1導電型の半導体領域と前記エミッタ電極とが電気的に接続される第2のコンタクト部と
を備え、
前記トランジスタ領域における前記半導体基板は、
前記半導体基板の上面に設けられる第1導電型のベース領域 と、
前記ベース領域の直下に設けられる第2導電型のドリフト領域と、
前記第1のダミートレンチ部の長手部の端部と前記半導体基板の端部との間の前記ベース領域に設けられ、前記第1のコンタクト部により前記エミッタ電極と電気的に接続し、前記ベース領域よりキャリア濃度が高い第1導電型の半導体領域と
を有し、 前記長手部が延伸する第1方向と直交する第2方向における前記第2のコンタクト部の幅は、前記第1のコンタクト部における前記第2方向の幅よりも長い半導体装置。 - 前記ダイオード領域は、隣接する2個の前記第1のダミートレンチ部の間に位置する前記半導体基板の一部であるメサ部を有し、
前記第2のコンタクト部は、前記第2方向に延伸して、前記ダイオード領域における複数の前記メサ部に対応する長さに渡って設けられる
請求項7に記載の半導体装置。 - 前記トランジスタ領域は、前記半導体基板の深さ方向において、前記第1のダミートレンチ部の底部と第1導電型のベース領域の底部との間に設けられ、且つ、前記深さ方向に直交する平面方向において前記第1のコンタクト部よりも内側に設けられた、第2導電型の電荷蓄積領域を含む
請求項7または8に記載の半導体装置。 - 前記半導体装置は、
前記第2方向において互いに離間して設けられた複数の前記トランジスタ領域と、
複数の前記トランジスタ領域のうち、前記第2方向において隣接する各2個の前記トランジスタ領域の間に設けられた前記ダイオード領域と
を備える
請求項7から9のいずれか一項に記載の半導体装置。 - トランジスタ領域を有する半導体基板と、
前記半導体基板上に設けられたエミッタ電極と、
前記半導体基板の前記トランジスタ領域に設けられ、前記エミッタ電極と電気的に接続するダミー導電部を有する第1のダミートレンチ部と、
前記エミッタ電極と電気的に接続される第1のコンタクト部と、 前記トランジスタ領域が設けられる活性領域の外側に位置するゲートランナー部と、
前記トランジスタ領域に各々位置する、
前記第1のダミートレンチ部の長手部が延伸する第1方向に延伸し、且つ、前記ゲートランナー部と電気的に接続するゲート導電部を有する、ゲートトレンチ部と、
前記第1方向と直交する第2方向において最も外側に位置する前記ゲートトレンチ部または前記第1のダミートレンチ部よりも外側に位置し、前記第1方向に延伸する1以上の周辺長手コンタクト部と
を備え、
前記トランジスタ領域における前記半導体基板は、
前記半導体基板の上面に設けられる第1導電型のベース領域 と、
前記ベース領域の直下に設けられる第2導電型のドリフト領域と、
前記第1のダミートレンチ部の前記長手部の端部と前記半導体基板の端部との間の前記ベース領域に設けられ、前記第1のコンタクト部により前記エミッタ電極と電気的に接続し、前記ベース領域よりキャリア濃度が高い第1導電型の半導体領域と
を有し、
前記1以上の周辺長手コンタクト部のうち前記第2方向において前記半導体基板の端部に最も近い周辺長手コンタクト部と前記ゲートランナー部との離間距離は、前記第1のコンタクト部と前記ゲートランナー部との離間距離に等しい半導体装置。 - トランジスタ領域を有する半導体基板と、
前記半導体基板上に設けられたエミッタ電極と、
前記半導体基板の前記トランジスタ領域に設けられ、前記エミッタ電極と電気的に接続するダミー導電部を有する第1のダミートレンチ部と、
前記エミッタ電極と電気的に接続される第1のコンタクト部と、
前記トランジスタ領域が設けられる活性領域の外側に位置するゲート金属層と、
前記トランジスタ領域に設けられ、前記第1のダミートレンチ部の長手部が延伸する第1方向に延伸する複数のゲートトレンチ部と、
を備え、
前記トランジスタ領域における前記半導体基板は、
前記半導体基板の上面に設けられる第1導電型のベース領域 と、
前記ベース領域の直下に設けられる第2導電型のドリフト領域と、
前記第1のダミートレンチ部の前記長手部の端部と前記半導体基板の端部との間の前記ベース領域に設けられ、前記第1のコンタクト部により前記エミッタ電極と電気的に接続し、前記ベース領域よりキャリア濃度が高い第1導電型の半導体領域と
を有し、
前記トランジスタ領域における前記半導体基板は、第1導電型のベース領域を有し、
前記第1のコンタクト部により前記エミッタ電極と接続される前記半導体領域は、前記ベース領域よりもキャリア濃度の高い高濃度領域であり、
前記高濃度領域は、前記第1のコンタクト部の下方から、前記ゲート金属層の下方まで連続して設けられていて、
それぞれのゲートトレンチ部は、前記トランジスタ領域から、前記ゲート金属層の下方まで延伸して設けられており、
前記高濃度領域は、2つの前記ゲートトレンチ部の間において、前記第1のコンタクト部の下方から、前記ゲート金属層の下方まで延伸して設けられている半導体装置。 - 少なくとも一つの前記ゲートトレンチ部は、前記第1方向における端部が前記ゲート金属層の下方に配置されており、
前記高濃度領域は、前記ゲートトレンチ部の前記第1方向における前記端部よりも外側まで延伸している
請求項12に記載の半導体装置。 - 複数の前記第1のコンタクト部のそれぞれに対して前記高濃度領域が設けられており、
それぞれの前記高濃度領域は、前記ゲートトレンチ部の前記第1方向における前記端部よりも外側において互いに接続されている
請求項13に記載の半導体装置。 - 前記半導体装置は、前記ゲート金属層と、前記ゲートトレンチ部の前記端部との間に設けられ、前記ゲート金属層と前記ゲートトレンチ部とを電気的に接続する、ポリシリコンで形成されたゲート接続部を備え、
前記高濃度領域は、前記ゲート接続部と重ならない領域に配置されている
請求項13または14に記載の半導体装置。 - 前記ゲート金属層の下方において、複数の前記ゲート接続部が離散的に配置されており、
前記高濃度領域は、2つの前記ゲート接続部の間を通って、前記ゲートトレンチ部の前記端部よりも外側まで延伸している
請求項15に記載の半導体装置。 - 少なくとも一部の前記ゲートトレンチ部は、上面視における形状が直線であり、前記直線の端部が前記ゲート金属層の下方に配置されており、
前記高濃度領域は、2つの前記直線の端部の間を通って、前記直線の端部よりも外側まで延伸している
請求項13から16のいずれか一項に記載の半導体装置。 - 少なくとも一部の前記ゲートトレンチ部は、
第1方向に延伸する2つの長手部と、
前記ゲート金属層の下方に設けられ、2つの前記長手部を接続する短手部と
を有し、
前記高濃度領域は、2つの前記短手部の間を通って、前記短手部よりも外側まで延伸している
請求項13から17のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記トランジスタ領域に隣接するダイオード領域を有し、
前記半導体装置は、
前記ダイオード領域に設けられ、前記エミッタ電極と電気的に接続するダミー導電部を有する第2のダミートレンチ部と、
前記第2のダミートレンチ部の長手部の端部と前記半導体基板の端部との間に設けられた第2のコンタクト部と
を備え、
前記第2のコンタクト部の下方から前記ゲート金属層の下方まで、前記高濃度領域が設けられており、
前記第1方向と直交する第2方向において、前記ダイオード領域における前記高濃度領域の幅が、前記トランジスタ領域における前記高濃度領域の幅よりも大きい
請求項12から18のいずれか一項に記載の半導体装置。 - 前記高濃度領域は、前記長手部が延伸する第1方向において、前記ゲート金属層よりも外側まで設けられている
請求項12から19のいずれか一項に記載の半導体装置。 - 前記半導体装置は、前記第1方向と直交する第2方向において最も外側に位置する前記第1のダミートレンチ部よりも外側に位置し、前記第1方向に延伸する1以上の周辺長手コンタクト部を備え、
前記高濃度領域は、前記周辺長手コンタクト部に対しても設けられており、
前記高濃度領域は、前記周辺長手コンタクト部の下方から前記ゲート金属層の下方まで、前記第2方向に延伸して設けられている
請求項12から20のいずれか一項に記載の半導体装置。 - 前記トランジスタ領域に設けられ、前記第1のダミートレンチ部の長手部が延伸する第1方向に延伸するゲートトレンチ部を更に備え、
前記トランジスタ領域における前記半導体基板は、前記ベース領域に設けられ、前記ドリフト領域よりキャリア濃度が高い第2導電型のエミッタ領域を有し、
前記エミッタ領域は、
前記ゲートトレンチ部と接し、
前記半導体基板の上面において前記エミッタ電極と電気的に接続する
請求項1から21のいずれか一項に記載の半導体装置。
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