JP6711370B2 - 基板、撮像ユニットおよび撮像装置 - Google Patents
基板、撮像ユニットおよび撮像装置 Download PDFInfo
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- JP6711370B2 JP6711370B2 JP2018100081A JP2018100081A JP6711370B2 JP 6711370 B2 JP6711370 B2 JP 6711370B2 JP 2018100081 A JP2018100081 A JP 2018100081A JP 2018100081 A JP2018100081 A JP 2018100081A JP 6711370 B2 JP6711370 B2 JP 6711370B2
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- H01L27/144—Devices controlled by radiation
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2011−59272号公報
[特許文献2] 特開2012−028496号公報
図1は、第1実施形態に係る撮像ユニット10の模式断面図である。撮像ユニット10は、撮像チップ100と、コア基板120と、環囲部材140と、光学素子の一例としてのカバーガラス160と、電子部品180とを含んで構成される。
図8は、第2実施形態に係る撮像ユニット10の模式斜視図である。撮像ユニット10は、撮像チップ100と、コア基板120と、環囲部材140と、光学素子の一例としてのカバーガラス160とを含んで構成される。図8は、図面を見易くする目的でカバーガラス160が取り外された状態を示している。被写体光束が撮像チップ100へ入射する方向をz軸方向とする。撮像チップ100の長手方向をx軸方向、短手方向をy軸方向とする。なお、コア基板120の一側面(紙面の右側側面)から伸延部151が外側へ伸延する方向をx軸プラス方向とし、x軸プラス方向と逆方向をx軸マイナス方向とする。
第2実施形態で上述したように、撮像ユニットの部品実装面にはコネクタだけでなくバイパスコンデンサが配置されている。そのため、バイパスコンデンサを部品実装面に実装する場合は、バイパスコンデンサの実装面積を確保する必要がある。第3実施形態の撮像ユニットは、バイパスコンデンサの数を減らすことで電子部品の実装面積を確保しつつ、電源も安定させることが可能となる。
Claims (10)
- 撮像チップが配置される基板であって、
第1絶縁層と、
前記第1絶縁層の弾性率とは異なる弾性率を有する第2絶縁層と、
前記第1絶縁層および前記第2絶縁層に挟まれ、前記第1絶縁層および前記第2絶縁層よりも剛性の高い芯層と、を備え、
前記芯層は、前記第1絶縁層に設けられた伝熱経路を介して前記撮像チップで発生した熱を受け取る基板。 - 前記第1絶縁層および前記第2絶縁層の少なくともいずれか一方の絶縁層は、ガラスクロスに熱硬化性樹脂を含浸させて形成された絶縁層である請求項1に記載の基板。
- 前記第1絶縁層および前記第2絶縁層に挟まれ、前記第1絶縁層および前記第2絶縁層よりも剛性の高い第2芯層と、
前記芯層および前記第2芯層に挟まれ、前記芯層および前記第2芯層よりも熱伝導率の低い断熱層と、
を備える請求項1または請求項2に記載の基板。 - 前記芯層の熱伝導率は、前記第2芯層の熱伝導率よりも大きい請求項3に記載の基板。
- 前記第2芯層の比熱容量は、前記芯層の比熱容量よりも大きい請求項3または請求項4に記載の基板。
- 前記第1絶縁層に形成された配線層を備える請求項1から請求項5のいずれか一項に記載の基板。
- 前記撮像チップと、
請求項6に記載の基板と、を備え、
前記撮像チップは、前記配線層に実装される撮像ユニット。 - 前記第1絶縁層の弾性率は、前記第2絶縁層の弾性率よりも小さい請求項7に記載の撮像ユニット。
- 前記伝熱経路は、前記第1絶縁層に設けられた貫通孔により形成される請求項7または請求項8に記載の撮像ユニット。
- 前記貫通孔は、前記撮像チップの発熱領域に対応して設けられた請求項9に記載の撮像ユニット。
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