JP6692306B2 - 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 - Google Patents
半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 Download PDFInfo
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- JP6692306B2 JP6692306B2 JP2017021945A JP2017021945A JP6692306B2 JP 6692306 B2 JP6692306 B2 JP 6692306B2 JP 2017021945 A JP2017021945 A JP 2017021945A JP 2017021945 A JP2017021945 A JP 2017021945A JP 6692306 B2 JP6692306 B2 JP 6692306B2
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Description
本実施形態の半導体装置は、炭化珪素層と、炭化珪素層の上に位置し、リン(P)、ヒ素(As)、アンチモン(Sb)、及び、ビスマス(Bi)の群の少なくとも一つの元素を含み、少なくとも一つの元素の少なくとも一部が3個の酸素と一重結合で結合し1個の酸素と二重結合で結合する酸化シリコン層と、を備える。
本実施形態の半導体装置は、酸化シリコン層が、ボロン(B)、アルミニウム(Al)、ガリウム(Ga)、スカンジウム(Sc)、イットリウム(Y)、及び、ランタノイド(La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)の群の少なくとも一つの元素を含む点以外は、第1の実施形態と同様である。以下、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、MOSFETの終端領域が設けられる点で第1の実施形態と異なっている。第1の実施形態と重複する内容については記述を省略する。
本実施形態のインバータ回路及び駆動装置は、第1の実施形態の半導体装置を備える駆動装置である。
本実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
本実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
本実施形態の昇降機は、第1の実施形態の半導体装置を備える昇降機である。
16 pウェル領域(炭化珪素層)
28 酸化シリコン層
30 ゲート電極
100 MOSFET(半導体装置)
150 インバータ回路
300 駆動装置
400 車両
500 車両
600 昇降機
Claims (15)
- 炭化珪素層と、
前記炭化珪素層の上に位置し、リン(P)、ヒ素(As)、アンチモン(Sb)、及び、ビスマス(Bi)の群の少なくとも一つの元素と、水酸基と結合するシリコンを含み、前記少なくとも一つの元素の少なくとも一部が3個の酸素と一重結合で結合し1個の酸素と二重結合で結合する酸化シリコン層と、
を備え、
前記少なくとも一つの元素の少なくとも一部と前記水酸基と結合するシリコンが対を成す構造を形成する半導体装置。 - 前記少なくとも一つの元素の中で、3個の酸素と一重結合で結合し1個の酸素と二重結合で結合する元素の占める割合が、4個の酸素と一重結合する元素の占める割合よりも多い請求項1記載の半導体装置。
- 前記少なくとも一つの元素の中で、3個の酸素と一重結合で結合し1個の酸素と二重結合で結合する元素の占める割合が、4個の酸素と一重結合する元素の占める割合の10倍以上である請求項2記載の半導体装置。
- 前記少なくとも一つの元素の中で、3個の酸素と一重結合で結合し1個の酸素と二重結合で結合する元素の割合が90%以上である請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記少なくとも一つの元素の濃度が1×1018cm−3以上5×1021cm−3以下である請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記酸化シリコン層が水素を含み、前記水素の濃度が前記少なくとも一つの元素の濃度の80%以上120%以下である請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記酸化シリコン層の層厚方向の両端部から層厚の10%を除外した領域に在る第1の位置での水素の濃度が、前記第1の位置での前記少なくとも一つの元素の濃度の80%以上120%以下である請求項1ないし請求項6いずれか一項記載の半導体装置。
- 炭化珪素層と、
前記炭化珪素層の上に位置し、リン(P)、ヒ素(As)、アンチモン(Sb)、及び、ビスマス(Bi)の群の少なくとも一つの第1の元素と、ボロン(B)、アルミニウム(Al)、ガリウム(Ga)、スカンジウム(Sc)、イットリウム(Y)、及び、ランタノイド(La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)の群の少なくとも一つの第2の元素と、を含む酸化シリコン層と、を備え、
前記少なくとも一つの第1の元素の少なくとも一部が3個の酸素と一重結合で結合し1個の酸素と二重結合で結合し、
前記少なくとも一つの第1の元素の少なくとも一部と前記第2の元素が対を成す構造を形成する半導体装置。 - 前記炭化珪素層との間に前記酸化シリコン層が位置するゲート電極を、更に備える請求項1ないし請求項8いずれか一項記載の半導体装置。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備えるインバータ回路。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備える駆動装置。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備える車両。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備える昇降機。
- 炭化珪素層の上に、リン(P)、ヒ素(As)、アンチモン(Sb)、及び、ビスマス(Bi)の群の少なくとも一つの元素を含む酸化シリコン層を形成し、
非酸化性雰囲気中で第1の熱処理を行い、
オゾンと窒素を含む雰囲気中で前記第1の熱処理よりも低い温度で第2の熱処理を行い、
水素を含む雰囲気中で第3の熱処理を行う半導体装置の製造方法。 - 前記第2の熱処理の温度は、100℃以上700℃以下である請求項14記載の半導体装置の製造方法。
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