JP6665478B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6665478B2 JP6665478B2 JP2015203103A JP2015203103A JP6665478B2 JP 6665478 B2 JP6665478 B2 JP 6665478B2 JP 2015203103 A JP2015203103 A JP 2015203103A JP 2015203103 A JP2015203103 A JP 2015203103A JP 6665478 B2 JP6665478 B2 JP 6665478B2
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- 239000004065 semiconductor Substances 0.000 title claims description 189
- 238000009792 diffusion process Methods 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 38
- 230000015556 catabolic process Effects 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 17
- 238000002485 combustion reaction Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000567 combustion gas Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- Physics & Mathematics (AREA)
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Description
特許文献1 特開2001−217420号公報
特許文献2 特開平11−145466号公報
特許文献3 特開2001−94092号公報
特許文献4 国際公開第2014/073656号
特許文献5 国際公開第2014/142331号
Claims (14)
- 半導体基板と、
前記半導体基板に形成され、主電流を流す半導体素子と、
前記半導体基板の第1面側に形成され、前記半導体素子を囲む耐圧構造領域と、
前記第1面側に形成され、前記耐圧構造領域により囲まれる領域の内側の第1端子および外側の第2端子を有する保護用ダイオードと、
前記第1面側に形成され、前記耐圧構造領域における前記保護用ダイオードと並んだ領域および前記保護用ダイオードの間の隙間部分に設けられた、前記半導体基板の前記第1面とは逆導電型であるフローティング電位の拡散層と、
を備え、
前記拡散層は、前記保護用ダイオードの延伸方向と略平行に延伸する半導体装置。 - 前記拡散層は、前記耐圧構造領域における前記保護用ダイオードと並んだ領域および前記保護用ダイオードの間の隙間部分を含む前記耐圧構造領域の外周の一部のみに対して設けられる請求項1に記載の半導体装置。
- 前記隙間部分は、前記第1端子および前記第2端子の間に延伸する前記保護用ダイオードの延伸方向に沿って、前記保護用ダイオードに隣接して延伸する請求項1または2に記載の半導体装置。
- 前記拡散層は、前記隙間部分の延伸方向において複数箇所に設けられる請求項3に記載の半導体装置。
- 前記拡散層は、前記隙間部分において、前記保護用ダイオードから前記耐圧構造領域までの間で複数箇所並んで設けられる請求項1〜4のいずれか一項に記載の半導体装置。
- 前記保護用ダイオードの延伸方向の第1位置において前記保護用ダイオードから前記耐圧構造領域までの間に設けられる前記拡散層の数は、前記保護用ダイオードの延伸方向において前記第1位置より前記第2端子に近い第2位置において前記保護用ダイオードから前記耐圧構造領域までの間に設けられる前記拡散層の数よりも小さい請求項5に記載の半導体装置。
- 前記拡散層は、前記隙間部分において、前記保護用ダイオードと、前記耐圧構造領域とを結ぶ方向に複数箇所並んで設けられる請求項1〜6のいずれか一項に記載の半導体装置。
- 前記拡散層を覆う絶縁層を更に備える請求項1から7のいずれか一項に記載の半導体装置。
- 前記保護用ダイオードは、隣接して交互に設けられた複数の第1導電型半導体層および複数の第2導電型半導体層を有する請求項1から8のいずれか一項に記載の半導体装置。
- 前記保護用ダイオードは、ポリシリコンにより形成される請求項1から9のいずれか一項に記載の半導体装置。
- 前記半導体基板の前記第1面側において、前記半導体素子、前記耐圧構造領域、前記保護用ダイオード、および前記拡散層を覆う、SiNを含む表面保護膜を備える請求項1から10のいずれか一項に記載の半導体装置。
- 前記半導体素子は、IGBTまたはMOSFETである請求項1から11のいずれか一項に記載の半導体装置。
- 半導体基板と、
前記半導体基板に形成され、主電流を流す半導体素子と、
前記半導体基板の第1面側に形成され、前記半導体素子を囲む耐圧構造領域と、
前記第1面側に形成され、前記耐圧構造領域により囲まれる領域の内側の端子および外側の端子を有する保護用ダイオードと、
前記第1面側に形成され、前記耐圧構造領域における前記保護用ダイオードと並んだ領域および前記保護用ダイオードの間の隙間部分を含む前記耐圧構造領域の外周の一部のみに対して設けられた、前記半導体基板の前記第1面とは逆導電型である拡散層と、
を備え、
前記拡散層は、前記保護用ダイオードの延伸方向と略平行に延伸する半導体装置。 - 前記拡散層は、前記隙間部分のみに対して設けられる請求項13に記載の半導体装置。
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JP3191747B2 (ja) | 1997-11-13 | 2001-07-23 | 富士電機株式会社 | Mos型半導体素子 |
JP2001094092A (ja) | 1999-09-24 | 2001-04-06 | Toyota Autom Loom Works Ltd | パワーmosトランジスタ |
JP4054155B2 (ja) | 2000-02-01 | 2008-02-27 | 三菱電機株式会社 | 半導体装置 |
JP4757449B2 (ja) * | 2004-01-29 | 2011-08-24 | 三菱電機株式会社 | 半導体装置 |
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