JP6661204B1 - Layered material cleavage method - Google Patents
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- JP6661204B1 JP6661204B1 JP2019079849A JP2019079849A JP6661204B1 JP 6661204 B1 JP6661204 B1 JP 6661204B1 JP 2019079849 A JP2019079849 A JP 2019079849A JP 2019079849 A JP2019079849 A JP 2019079849A JP 6661204 B1 JP6661204 B1 JP 6661204B1
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000003776 cleavage reaction Methods 0.000 title claims abstract description 23
- 230000007017 scission Effects 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 title claims description 63
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000003780 insertion Methods 0.000 claims abstract description 7
- 230000037431 insertion Effects 0.000 claims abstract description 7
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000003475 lamination Methods 0.000 claims description 9
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 abstract description 20
- 238000010586 diagram Methods 0.000 abstract description 8
- 229940125773 compound 10 Drugs 0.000 abstract 1
- ZLVXBBHTMQJRSX-VMGNSXQWSA-N jdtic Chemical compound C1([C@]2(C)CCN(C[C@@H]2C)C[C@H](C(C)C)NC(=O)[C@@H]2NCC3=CC(O)=CC=C3C2)=CC=CC(O)=C1 ZLVXBBHTMQJRSX-VMGNSXQWSA-N 0.000 abstract 1
- 239000002390 adhesive tape Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002932 luster Substances 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【課題】所望の積層面で劈開する。【解決手段】シート状物質１１が多数積層された熱電半導体化合物（例えば、ビスマス・テルル系化合物又はアンチモン・テルル系化合物）１０を劈開する劈開方法であって、熱電半導体化合物１０の何れかの積層面に平行に刃２２を、操作部の操作速度よりも低減させた挿入速度で挿入する挿入ステップと、熱電半導体化合物１０が積層面で劈開される劈開ステップとを備える。刃２２は、すくい面が台形形状の片刃であることが好ましい。【選択図】図１PROBLEM TO BE SOLVED: To cleave at a desired laminated surface. Kind Code: A1 A cleavage method for cleaving a thermoelectric semiconductor compound (for example, a bismuth-tellurium compound or an antimony-tellurium compound) 10 in which a large number of sheet-shaped substances 11 are laminated, in which any one of the thermoelectric semiconductor compounds 10 is laminated. An insertion step of inserting the blade 22 parallel to the surface at an insertion speed that is lower than the operation speed of the operation portion, and a cleavage step of cleaving the thermoelectric semiconductor compound 10 on the laminated surface. The blade 22 is preferably a single blade having a trapezoidal rake face. [Selection diagram] Fig. 1
Description
本発明は、層状物質劈開方法に関する。 The present invention relates to a method for cleaving a layered material.
シート状物質（例えば、グラフェン）が多数積層された層状物質（例えば、グラファイト、黒鉛）から単層のシート状物質を剥離する方法が知られている。例えば、特許文献１には、グラファイトの表層面に粘着テープを貼り付け、その後、粘着テープを剥離する作業を実行することで、グラフェンシートを形成する、ことが開示されている。 There is known a method of peeling a single-layer sheet material from a layered material (eg, graphite, graphite) in which a large number of sheet-like materials (eg, graphene) are stacked. For example, Patent Document 1 discloses that a graphene sheet is formed by attaching an adhesive tape to a surface layer of graphite and then performing an operation of peeling the adhesive tape.
ところで、熱電変換素子には、例えば、ビスマス・テルル系（Ｂｉ−Ｔｅ系）やアンチモン・テルル系（Ｓｂ−Ｔｅ系）の結晶が使用される。これらの結晶は、グラファイトと同様に、シート状物質が積層された積層構造をしており、面状に劈開することができる。このようなシート状物質の特性評価を行う場合、特許文献１に記載の技術を適用して、粘着テープで剥離することが考えられる。 By the way, for example, a bismuth tellurium (Bi-Te) or antimony tellurium (Sb-Te) crystal is used for the thermoelectric conversion element. These crystals have a laminated structure in which sheet-like substances are laminated like graphite, and can be cleaved in a planar shape. When performing the property evaluation of such a sheet-like substance, it is conceivable to apply the technique described in Patent Document 1 and peel off the sheet-like substance with an adhesive tape.
しかしながら、粘着テープを用いて層状物質を劈開すると、シート状物質と隣接するシート層物質との結合強度が小さい層で劈開してしまう。そのため、必ずしも所望の積層面で劈開できるとは限らない。 However, when the layered material is cleaved using an adhesive tape, the layered material is cleaved in a layer having a low bonding strength between the sheet material and an adjacent sheet layer material. Therefore, cleavage cannot always be performed at a desired stacked surface.
本発明は、このような事情に鑑みてなされたものであり、所望の積層面で劈開することができる層状物質劈開方法を提供することを目的とする。 The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a method for cleaving a layered material that can be cleaved on a desired stacked surface.
前記目的を達成するために、本発明は、シート状物質が多数積層された熱電半導体化合物（例えば、ビスマス・テルル系化合物又はアンチモン・テルル系化合物）を劈開する層状物質劈開方法であって、前記熱電半導体化合物の何れかの積層面に、すくい面が台形形状の片刃を挿入する挿入ステップと、前記熱電半導体化合物が前記積層面で劈開される劈開ステップとを備えることを特徴とする。 In order to achieve the above object, the present invention provides a method of cleaving a layered material for cleaving a thermoelectric semiconductor compound (for example, a bismuth tellurium-based compound or an antimony tellurium-based compound) in which a large number of sheet-like materials are stacked, The method is characterized by comprising an insertion step of inserting a single blade having a trapezoidal rake face into any one of the laminated surfaces of the thermoelectric semiconductor compound, and a cleavage step of cleaving the thermoelectric semiconductor compound at the laminated surface.
本発明によれば、所望の積層面で劈開することができる。 According to the present invention, cleavage can be performed at a desired layer plane.
以下、図面を参照して、本発明の実施の形態（以下、「本実施形態」と称する）につき詳細に説明する。なお、各図は、本実施形態を十分に理解できる程度に、概略的に示してあるに過ぎない。また、各図において、共通する構成要素や同様な構成要素については、同一の符号を付し、それらの重複する説明を省略する。 Hereinafter, an embodiment of the present invention (hereinafter, referred to as “the present embodiment”) will be described in detail with reference to the drawings. In addition, each figure is only schematically shown to the extent that the present embodiment can be sufficiently understood. In addition, in each of the drawings, common constituent elements and similar constituent elements are denoted by the same reference numerals, and redundant description thereof will be omitted.
（第１実施形態）
図１は、本発明の第１実施形態として、層状物質をシート状に劈開する劈開方法を説明する説明図である。
まず、作業者は、特性評価サンプルとしての層状物質１０を両面テープ４５で載置台４０に固定する（ＳＰ１）。このとき、両面テープ４５でなく、ゲルや真空吸着等で層状物質１０を載置台４０に固定しても構わない。層状物質１０は、シート状物質１１が多数積層して構成された熱電半導体化合物であり、例えば、ビスマス・テルル（Ｂｉ−Ｔｅ）系化合物やアンチモン・テルル（Ｓｂ−Ｔｅ）系化合物の結晶である。
(1st Embodiment)
FIG. 1 is an explanatory diagram illustrating a cleavage method for cleaving a layered material into a sheet as a first embodiment of the present invention.
First, the worker fixes the layered material 10 as a property evaluation sample to the mounting table 40 with the double-sided tape 45 (SP1). At this time, the layered material 10 may be fixed to the mounting table 40 by gel, vacuum suction, or the like instead of the double-sided tape 45. The layered substance 10 is a thermoelectric semiconductor compound formed by laminating many sheet-shaped substances 11, and is, for example, a crystal of a bismuth tellurium (Bi-Te) -based compound or an antimony tellurium (Sb-Te) -based compound. .
例えば、図２に示すＢｉ２Ｔｅ３系化合物は、六方晶の層状構造を有する層状化合物であり、ｃ軸方向に、２層のＢｉ（黒丸）と、３層のＴｅ（白丸）とが積層したものである。ここで、中間のＴｅをＴｅ（２）と表記し、両側のＴｅをＴｅ（１）と表記している。隣接するＴｅ（１）層間は、弱いファン・デル・ワールス力で結合しており、ｃ軸に垂直な面（ａｂ面：積層面）で容易に劈開する。なお、Ｔｅ（１）−Ｂｉ間は、共有結合で強く結合しており、Ｂｉ−Ｔｅ（２）間は、（共有結合＋イオン結合）で強く結合している。また、Ｂｉ２Ｔｅ３系化合物は、熱電特性も異方性を示し、ファン・デル・ワールス結合を横切らないａｂ面方向で電気伝導率が向上し、高い熱電性能を奏する。 For example, the Bi 2 Te 3 based compound shown in FIG. 2 is a layered compound having a hexagonal layered structure, and two layers of Bi (black circles) and three layers of Te (white circles) are stacked in the c-axis direction. It was done. Here, Te in the middle is described as Te (2), and Te on both sides is described as Te (1). Adjacent Te (1) layers are connected by a weak van der Waals force, and are easily cleaved on a plane perpendicular to the c-axis (ab plane: stacked plane). Note that Te (1) -Bi is strongly bonded by a covalent bond, and Bi-Te (2) is strongly bonded by (covalent bond + ionic bond). In addition, the Bi 2 Te 3 -based compound also exhibits anisotropy in thermoelectric properties, has improved electrical conductivity in the ab plane direction that does not cross Van der Waals bonds, and exhibits high thermoelectric performance.
図１の説明に戻り、作業者は、ＸＹＺθステージ３０を用い、超硬カッター２０の刃を層状物質１０の壁面まで移動させる（ＳＰ２）。さらに、作業者は、超硬カッター２０の片刃部２２を層状物質１０の任意のシート状物質１１の積層面に略平行に挿入する（ＳＰ３）。これにより、シート状物質１１が劈開（剥離）される。なお、層状物質１２は、層状物質１０からシート状物質１１が剥離された残存物質を意味する。また、図１では、片刃部２２を最上層に挿入し、シート状物質１１と層状物質１２とに劈開しているが、片刃部２２を他の積層面（所望の積層面）に挿入すれば、層状物質と層状物質とに劈開される。さらに作業者は、劈開したシート状物質１１及び層状物質１２の何れか一方又は双方を用いて、熱電特性や電気抵抗等の特性評価を行う。 Returning to the description of FIG. 1, the operator moves the blade of the carbide cutter 20 to the wall surface of the layered material 10 using the XYZθ stage 30 (SP2). Further, the operator inserts the one-blade portion 22 of the carbide cutter 20 substantially parallel to the lamination surface of any sheet material 11 of the layer material 10 (SP3). Thereby, the sheet material 11 is cleaved (peeled). Note that the layered substance 12 means a remaining substance obtained by peeling the sheet-shaped substance 11 from the layered substance 10. Further, in FIG. 1, the one-blade portion 22 is inserted into the uppermost layer and is cleaved into the sheet-like material 11 and the layered material 12. Is cleaved into a layered material and a layered material. Further, the operator evaluates characteristics such as thermoelectric characteristics and electric resistance using one or both of the cleaved sheet-like material 11 and the layered material 12.
図３は、層状物質の劈開に使用する刃の構造図である。図３（ａ）は、平面図であり、図３（ｂ）は、正面図であり、図３（ｃ）は、側面図である。
超硬カッター２０は、軸部２１と片刃部２２とを有し、軸部２１と片刃部２２とが接着（接合）されている。軸部２１は、直径φ（例えば、φ＝１．５８ｍｍ）、長さＬ（例えば、Ｌ＝１６ｍｍ）の軸体であり、ＸＹＺθステージ３０に固定される。
FIG. 3 is a structural diagram of a blade used for cleaving a layered material. 3A is a plan view, FIG. 3B is a front view, and FIG. 3C is a side view.
The cemented carbide cutter 20 has a shaft portion 21 and a single blade portion 22, and the shaft portion 21 and the single blade portion 22 are bonded (joined). The shaft 21 is a shaft having a diameter φ (for example, φ = 1.58 mm) and a length L (for example, L = 16 mm), and is fixed to the XYZθ stage 30.
片刃部２２は、例えば、平面視で直角二等辺三角形状の超硬スチールで形成されており、頂点の近傍に軸部２１が接合される。片刃部２２の平面形状である二等辺三角形の底角θ４がθ４＝４５°であり、頂角は９０°である。片刃部２２の厚みＴは、例えば、Ｔ＝０．５ｍｍであり、幅Ｄ（例えば、Ｄ＝７．２３４ｍｍ）の片刃が底辺の領域に形成されている。片刃部２２のすくい面２２ａと逃げ面２２ｂとは、刃角θ１（例えば、θ１＝２０°）、逃げ角θ２（例えば、θ２＝５°）、すくい角θ３（例えば、θ３＝１５５°）で形成されている。 The single-edged portion 22 is formed of, for example, a cemented carbide steel having a right-angled isosceles triangle shape in a plan view, and the shaft portion 21 is joined near a vertex. The base angle θ4 of the isosceles triangle, which is the planar shape of the single blade portion 22, is θ4 = 45 °, and the apex angle is 90 °. The thickness T of the single blade portion 22 is, for example, T = 0.5 mm, and a single blade having a width D (for example, D = 7.234 mm) is formed in the bottom region. The rake face 22a and the flank face 22b of the single blade portion 22 have a blade angle θ1 (eg, θ1 = 20 °), a clearance angle θ2 (eg, θ2 = 5 °), and a rake angle θ3 (eg, θ3 = 155 °). Is formed.
すくい面２２ａは、台形形状であり（図３（ｂ））、底辺の両端にはシャープエッジ２２ｃが形成されている。このシャープエッジ２２ｃは、例えば、サンプルとしての層状物質１０が小さいときに使用される。シャープエッジ２２ｃを使うことによって、作業者が容易に片刃部２２を積層面に挿入することができる。なお、片刃部２２は、平面視直角二等辺三角形でなくても、平面視二等辺三角形でもよく、非対称な三角形状でもよい。また、超硬カッター２０は、片刃に限らず両刃であっても構わない。 The rake face 22a has a trapezoidal shape (FIG. 3B), and sharp edges 22c are formed at both ends of the base. This sharp edge 22c is used, for example, when the layered material 10 as a sample is small. By using the sharp edge 22c, the operator can easily insert the single blade portion 22 into the lamination surface. In addition, the one-blade part 22 does not need to be a right-angled isosceles triangle in plan view, may be an isosceles triangle in plan view, or may be an asymmetric triangle. Further, the carbide cutter 20 is not limited to a single blade and may be a double blade.
図４は、劈開前の層状物質を示す写真であり、図５は、層状物質を劈開した劈開面を示す写真である。図４に示す層状物質１０はＢｉ２Ｔｅ３系化合物の結晶であり、図５で示すシート状物質１１の劈開面は、金属光沢を放っている。 FIG. 4 is a photograph showing the layered material before cleavage, and FIG. 5 is a photograph showing a cleavage plane obtained by cleaving the layered material. The layered substance 10 shown in FIG. 4 is a crystal of a Bi 2 Te 3 compound, and the cleavage plane of the sheet-shaped substance 11 shown in FIG. 5 has a metallic luster.
（第２実施形態）
前記第１実施形態では、層状物質１０を劈開してシート状物質１１を作成した。本第２実施形態では、劈開したシート状物質１１をさらに微細形状に細分化する。
(2nd Embodiment)
In the first embodiment, the sheet material 11 is formed by cleaving the layer material 10. In the second embodiment, the cleaved sheet material 11 is further subdivided into fine shapes.
図６は、シート状物質を細分化する細分化方法を説明する説明図である。
作業者は、シート状物質１１の上面の端部を超硬カッター２０の逃げ面２２ｂで押圧する（ＳＰ１）。逃げ面２２ｂは、逃げ角θ２を有しているので、逃げ面２２ｂの先端部がシート状物質１１を線状に押圧する。これにより、シート状物質１１が押圧された線状領域（例えば、端部）で割れる。このとき、作業者は、シャープエッジ２２ｃ（図３（ｂ））の部分でシート状物質１１を押圧しても構わない。そして、作業者は、超硬カッター２０を移動させつつ、シート状物質１１の上面を逃げ面２２ｂで押圧する（ＳＰ２）。これにより、シート状物質１１がＳＰ１と異なる他の部位で割れ、微細形状の多数の細片１１ｂに細分化される。
FIG. 6 is an explanatory diagram illustrating a subdivision method for subdividing a sheet-like substance.
The operator presses the end of the upper surface of the sheet material 11 with the flank 22b of the carbide cutter 20 (SP1). Since the flank 22b has the flank angle θ2, the tip of the flank 22b presses the sheet-like substance 11 linearly. As a result, the sheet material 11 is broken at the pressed linear region (for example, at the end). At this time, the operator may press the sheet-like substance 11 at the portion of the sharp edge 22c (FIG. 3B). Then, the operator presses the upper surface of the sheet material 11 with the flank 22b while moving the carbide cutter 20 (SP2). As a result, the sheet-like substance 11 is broken at another portion different from SP1, and is divided into many fine pieces 11b.
図７は、シート状物質を細分化した細片を示す写真である。
シート状物質１１が大きさ０．１ｍｍ程度の複数の細片１１ｂに細分化されている。また、それぞれの細片１１ｂの表面は、金属光沢を放っている。なお、サイズ比較のために、φ２５μｍの金線１５が載置されている。
FIG. 7 is a photograph showing a fragment obtained by subdividing a sheet-like substance.
The sheet material 11 is subdivided into a plurality of small pieces 11b having a size of about 0.1 mm. The surface of each strip 11b has a metallic luster. In addition, a gold wire 15 of φ25 μm is placed for size comparison.
（比較例）
前記実施形態の層状物質劈開方法では、片刃部２２を積層面に平行に挿入したが、層状物質１０の両面に粘着テープを貼付して、両側から引き離すことにより剥離することもできる。
(Comparative example)
In the method for cleaving the layered material of the above-described embodiment, the single-edged portion 22 is inserted in parallel with the lamination surface.
図８は、本発明の比較例である劈開方法を説明する説明図である。
まず、作業者は、層状物質１０の両面に粘着テープ４６を貼付する（ＳＰ２１）。ＳＰ２１の後、作業者は、２枚の粘着テープ４６を互いに反対方向に引き離す（ＳＰ２２）。これにより、層状物質１０の何れかの積層面で剥離する。具体的には、隣接するシート状物質１１同士の密着力（ファンデルワールス力）が小さい積層面で剥離する。そのため、何れの積層面で剥離されるか予測困難である。
FIG. 8 is an explanatory diagram illustrating a cleavage method as a comparative example of the present invention.
First, the worker attaches the adhesive tape 46 to both surfaces of the layered material 10 (SP21). After SP21, the worker separates the two adhesive tapes 46 in opposite directions (SP22). As a result, the layer material is peeled off on any one of the laminated surfaces. Specifically, the sheet materials 11 are separated from each other on the lamination surface where the adhesive force (Van der Waals force) between the adjacent sheet materials 11 is small. Therefore, it is difficult to predict which lamination surface will be peeled off.
しかしながら、前記第１実施形態のように、超硬カッター２０を用いた層状物質劈開方法であれば、片刃部２２を所望の積層面に挿入することができる。つまり、所望の積層面の劈開面１１ａを露出することができる。 However, in the case of the method for cleaving a layered material using the carbide cutter 20 as in the first embodiment, the single-edged portion 22 can be inserted into a desired lamination surface. That is, the cleavage plane 11a of the desired laminated surface can be exposed.
図９は、粘着テープを用いて層状物質を劈開した劈開面を示す写真である。
劈開面１１ａには、細かい傷が発生している。この傷は、２枚の粘着テープ４６の引き離しを手作業で行った際、劈開面同士が擦り合わせられて生じたと考えられる。この傷は、特性評価の評価結果が変わる原因となり、好ましいものではない。
FIG. 9 is a photograph showing a cleavage plane obtained by cleaving a layered material using an adhesive tape.
Fine scratches are generated on the cleavage plane 11a. This scratch is considered to have been caused by the cleavage surfaces being rubbed together when the two adhesive tapes 46 were separated manually. This flaw is not preferable because it causes a change in the evaluation result of the characteristic evaluation.
一方、前記第１実施形態の層状物質劈開方法によれば、超硬カッター２０を用いて、金属光沢を放つ劈開面１１ａが露出するので、安定な評価結果を得ることができる。 On the other hand, according to the method for cleaving the layered material of the first embodiment, the cleavage surface 11a emitting a metallic luster is exposed using the carbide cutter 20, so that a stable evaluation result can be obtained.
（第２実施形態）
前記実施形態の層状物質劈開方法は、ＸＹＺθステージ３０が超硬カッター２０を移動させたが、ＸＹＺθステージ３０の代わりに３軸マニュピレータを用いることもできる。
(2nd Embodiment)
Although the XYZθ stage 30 moves the carbide cutter 20 in the method for cleaving the layered material of the embodiment, a three-axis manipulator may be used instead of the XYZθ stage 30.
図１０は、本発明の第２実施形態で使用されるダイボンダの外観図であり、図１０（ａ）は、実体顕微鏡を除いた平面図であり、図１０（ｂ）は、実体顕微鏡を２点鎖線で示した側面図である。
ダイボンダ１００は、実体顕微鏡５０と、ステージ５２と、ワークホルダ５３と、３軸マニュピレータ６０とを備える。３軸マニュピレータ６０は、ヘッド部６１と操作部６２とを備える。ヘッド部６１には、超硬カッター２０が取り付けられ、ワークホルダ５３には、層状物質１０が固定される。３軸マニュピレータ６０は、操作部６２をＸＹＺ方向に動かすことにより、ヘッド部６１をＸＹＺ方向に１／Ｎ（例えば、Ｎ＝８）の変位量で移動させるものである（米国特許第５８７１１３６号明細書、米国特許第５９３１３７２号明細書参照）。回転ノブ６６は、超硬カッター２０を１対１の回転量で回転させるノブである。
FIG. 10 is an external view of a die bonder used in the second embodiment of the present invention, FIG. 10 (a) is a plan view excluding a stereo microscope, and FIG. It is the side view shown by the dotted chain line.
The die bonder 100 includes a stereo microscope 50, a stage 52, a work holder 53, and a three-axis manipulator 60. The three-axis manipulator 60 includes a head unit 61 and an operation unit 62. The carbide cutter 20 is attached to the head portion 61, and the layered material 10 is fixed to the work holder 53. The three-axis manipulator 60 moves the head unit 61 in the XYZ directions by a displacement of 1 / N (for example, N = 8) by moving the operation unit 62 in the XYZ directions (US Pat. No. 5,871,136). And U.S. Pat. No. 5,931,372). The rotation knob 66 is a knob for rotating the carbide cutter 20 by a one-to-one rotation amount.
この第２実施形態の層状物質劈開方法によれば、ヘッド部６１に取り付けられている超硬カッター２０が操作部６２の１／Ｎの変位量で移動させられる。このため、作業者は、実体顕微鏡５０で確認しながら、層状物質１０の積層面への片刃部２２の挿入速度を、操作部６２の操作速度よりも低減させることができる。 According to the method for cleaving the layered material of the second embodiment, the cemented carbide cutter 20 attached to the head portion 61 is moved by a 1 / N displacement amount of the operation portion 62. For this reason, the operator can reduce the insertion speed of the single blade portion 22 to the lamination surface of the layered material 10 more than the operation speed of the operation portion 62 while checking with the stereomicroscope 50.
１０，１２ 層状物質
１１ シート状物質
１１ａ 劈開面
２０ 超硬カッター
２２ 片刃部
２２ａ すくい面
３０ ＸＹＺθステージ
４５ 両面テープ
４６ 粘着テープ
６０ ３軸マニュピレータ
６２ 操作部
１００ ダイボンダ
10, 12 Layered substance 11 Sheet-shaped substance 11a Cleavage surface 20 Carbide cutter 22 Single blade portion 22a Rake surface 30 XYZθ stage 45 Double-sided tape 46 Adhesive tape 60 Triaxial manipulator 62 Operation unit 100 Die bonder
Claims (4)
前記熱電半導体化合物の何れかの積層面に、すくい面が台形形状の片刃を挿入する挿入ステップと、
前記熱電半導体化合物が前記積層面で劈開される劈開ステップと
を備えることを特徴とする層状物質劈開方法。 A method for cleaving a layered material that cleaves a thermoelectric semiconductor compound in which a large number of sheet-like materials are stacked,
An insertion step of inserting a rake face with a trapezoidal single-edged blade on any one of the laminated surfaces of the thermoelectric semiconductor compound,
Cleaving the thermoelectric semiconductor compound on the lamination plane.
前記挿入ステップでは、前記台形形状の片刃の底辺の両端に形成されたシャープエッジの一方を前記積層面に挿入する In the inserting step, one of the sharp edges formed at both ends of the base of the trapezoidal single blade is inserted into the lamination surface.
ことを特徴とする層状物質劈開方法。A method for cleaving a layered material, comprising:
前記熱電半導体化合物は、ビスマス・テルル系化合物又はアンチモン・テルル系化合物である
ことを特徴とする層状物質劈開方法。 The method for cleaving a layered material according to claim 1 or 2 , wherein
The method for cleaving a layered material, wherein the thermoelectric semiconductor compound is a bismuth tellurium-based compound or an antimony tellurium-based compound.
前記挿入ステップは、操作部の操作速度よりも低減させた挿入速度で前記片刃を挿入する
ことを特徴とする層状物質劈開方法。 The method for cleaving a layered material according to any one of claims 1 to 3, wherein
The insertion step, layered material cleavage method characterized by inserting said piece blade in the operating portion of the operating speed insertion speed which is also reduced from.
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