JP6583081B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6583081B2 JP6583081B2 JP2016057341A JP2016057341A JP6583081B2 JP 6583081 B2 JP6583081 B2 JP 6583081B2 JP 2016057341 A JP2016057341 A JP 2016057341A JP 2016057341 A JP2016057341 A JP 2016057341A JP 6583081 B2 JP6583081 B2 JP 6583081B2
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- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims description 43
- 238000005530 etching Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 16
- 238000011534 incubation Methods 0.000 claims description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 142
- 239000007789 gas Substances 0.000 description 64
- 235000012431 wafers Nutrition 0.000 description 64
- 230000015572 biosynthetic process Effects 0.000 description 23
- 229910004298 SiO 2 Inorganic materials 0.000 description 22
- 230000004888 barrier function Effects 0.000 description 15
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 13
- 239000007788 liquid Substances 0.000 description 13
- 238000000926 separation method Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 239000002052 molecular layer Substances 0.000 description 6
- 238000005121 nitriding Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
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Description
次に前記第3の層をエッチングし、前記第1の層の上面が露出すると共に凹部内に第3の層が残った状態でエッチングを停止するエッチング工程と、
その後、基板の上に処理ガスを供給して第3の層を形成し、当該第3の層により前記凹部を埋め込む後段工程と、を含み、
前記第1の層はシリコン酸化層であり、前記第2の層は窒化シリコン層であり、前記第3の層は窒化シリコン層であることと、
前記処理ガスを供給した時に、第1の層の表面におけるインキュベーションタイムが第2の層の表面におけるインキュベーションタイムよりも長いことと、を特徴とする。
その後ウエハWは、例えばCMP(Chemical Mechanical Polishing)により研磨されて、SiO2膜100の表面のSiN膜103が除去される。これにより図7に示すようにウエハWの表面にSiO2膜100が露出し、ホール109がSiN膜103(102)により埋め込まれた状態となる。
さらに基板処理システムは、液処理システム8、真空処理システム9及び天井搬送機構300を各々制御するコントローラ202、203及び204を備えており、各コントローラ202、203及び204は、上位制御部である上位コンピュータ200により指示される。上位コンピュータ200は、例えば図2に示すウエハWに対して、真空処理システム9にて、1回目のSiN膜102の成膜処理を行う工程、次いで液処理システム8にて、SiN膜102膜のエッチング処理を行う工程、その後真空処理システム9に戻し、2回目のSiN膜103の成膜処理を行う工程を順次実施するためのプログラムを備えている。
さらに成膜装置は、例えば1枚のウエハWを真空容器内に載置して処理を行う枚葉式の成膜装置でも良い。あるいはウエハWに原料ガスと、反応ガスとを供給して、ウエハWの表面に分子層(あるいは原子層)を積層するCVD(chemical vapor deposition)法を行う成膜装置でもよい。
9 真空処理システム
10 成膜装置
100 SiO2膜
101 バリア膜
102 1回目のSiN膜
103 2回目のSiN膜
109 溝部
200 上位コンピュータ
202〜204 コンピュータ
300 天井搬送機構
W ウエハ
Claims (4)
- 上面に第1の層の表面が露出していると共に前記第1の層に凹部が形成され、前記凹部の側壁が第2の層により被覆された半導体装置製造用の基板の上に処理ガスを供給して第3の層を形成し、当該第3の層により前記凹部を埋め込む前段工程と、
次に前記第3の層をエッチングし、前記第1の層の上面が露出すると共に凹部内に第3の層が残った状態でエッチングを停止するエッチング工程と、
その後、基板の上に処理ガスを供給して第3の層を形成し、当該第3の層により前記凹部を埋め込む後段工程と、を含み、
前記第1の層はシリコン酸化層であり、前記第2の層は窒化シリコン層であり、前記第3の層は窒化シリコン層であることと、
前記処理ガスを供給した時に、第1の層の表面におけるインキュベーションタイムが第2の層の表面におけるインキュベーションタイムよりも長いことと、を特徴とする半導体装置の製造方法。 - 前記エッチング工程は、凹部内における第3の層に前段工程時に形成された空隙が露出している状態でエッチングを停止することを特徴とする請求項1記載の半導体装置の製造方法。
- 前記エッチング工程は、エッチング液である、加熱したリン酸溶液を基板に接触させる工程であることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記後段工程を行った後、前記エッチング工程及び前記後段工程を少なくとも1回繰り返すことを特徴とする請求項1ないし3のいずれか一項に記載の半導体装置の製造方法。
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