JP6570249B2 - 導電性ポリマー組成物、コンタクト、部品、および方法 - Google Patents
導電性ポリマー組成物、コンタクト、部品、および方法 Download PDFInfo
- Publication number
- JP6570249B2 JP6570249B2 JP2014547399A JP2014547399A JP6570249B2 JP 6570249 B2 JP6570249 B2 JP 6570249B2 JP 2014547399 A JP2014547399 A JP 2014547399A JP 2014547399 A JP2014547399 A JP 2014547399A JP 6570249 B2 JP6570249 B2 JP 6570249B2
- Authority
- JP
- Japan
- Prior art keywords
- composition
- particles
- conductive
- silver
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title claims description 112
- 238000000034 method Methods 0.000 title claims description 13
- -1 contacts Substances 0.000 title description 29
- 229920001940 conductive polymer Polymers 0.000 title description 8
- 239000002245 particle Substances 0.000 claims description 78
- 229920000642 polymer Polymers 0.000 claims description 38
- 229910052709 silver Inorganic materials 0.000 claims description 29
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 28
- 239000004332 silver Substances 0.000 claims description 28
- 239000012948 isocyanate Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 239000000178 monomer Substances 0.000 claims description 19
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 17
- 150000002513 isocyanates Chemical class 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229920001187 thermosetting polymer Polymers 0.000 claims description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 3
- 150000003346 selenoethers Chemical class 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 31
- 239000000194 fatty acid Substances 0.000 description 31
- 229930195729 fatty acid Natural products 0.000 description 31
- 239000004593 Epoxy Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 23
- 150000004665 fatty acids Chemical class 0.000 description 20
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000011521 glass Substances 0.000 description 19
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000010409 thin film Substances 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 238000001723 curing Methods 0.000 description 14
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 13
- 239000003999 initiator Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000002161 passivation Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 10
- 230000005693 optoelectronics Effects 0.000 description 10
- 229920000728 polyester Polymers 0.000 description 10
- 150000003254 radicals Chemical class 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 229910052763 palladium Inorganic materials 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 239000011258 core-shell material Substances 0.000 description 7
- 239000003085 diluting agent Substances 0.000 description 7
- 239000002923 metal particle Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- VOBUAPTXJKMNCT-UHFFFAOYSA-N 1-prop-2-enoyloxyhexyl prop-2-enoate Chemical group CCCCCC(OC(=O)C=C)OC(=O)C=C VOBUAPTXJKMNCT-UHFFFAOYSA-N 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 125000004386 diacrylate group Chemical group 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920005862 polyol Polymers 0.000 description 3
- 150000003077 polyols Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 2
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 2
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 125000005313 fatty acid group Chemical group 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- IMYCVFRTNVMHAD-UHFFFAOYSA-N 1,1-bis(2-methylbutan-2-ylperoxy)cyclohexane Chemical compound CCC(C)(C)OOC1(OOC(C)(C)CC)CCCCC1 IMYCVFRTNVMHAD-UHFFFAOYSA-N 0.000 description 1
- JWTGRKUQJXIWCV-UHFFFAOYSA-N 1,2,3-trihydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(O)C(O)CO JWTGRKUQJXIWCV-UHFFFAOYSA-N 0.000 description 1
- ODCMOZLVFHHLMY-UHFFFAOYSA-N 1-(2-hydroxyethoxy)hexan-2-ol Chemical compound CCCCC(O)COCCO ODCMOZLVFHHLMY-UHFFFAOYSA-N 0.000 description 1
- HYFLWBNQFMXCPA-UHFFFAOYSA-N 1-ethyl-2-methylbenzene Chemical compound CCC1=CC=CC=C1C HYFLWBNQFMXCPA-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- HBFBFJVRBIGLND-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)butane-1,4-diol Chemical compound OCCC(CO)(CO)CO HBFBFJVRBIGLND-UHFFFAOYSA-N 0.000 description 1
- PUGOMSLRUSTQGV-UHFFFAOYSA-N 2,3-di(prop-2-enoyloxy)propyl prop-2-enoate Chemical compound C=CC(=O)OCC(OC(=O)C=C)COC(=O)C=C PUGOMSLRUSTQGV-UHFFFAOYSA-N 0.000 description 1
- ODBCKCWTWALFKM-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhex-3-yne Chemical compound CC(C)(C)OOC(C)(C)C#CC(C)(C)OOC(C)(C)C ODBCKCWTWALFKM-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- GTEXIOINCJRBIO-UHFFFAOYSA-N 2-[2-(dimethylamino)ethoxy]-n,n-dimethylethanamine Chemical compound CN(C)CCOCCN(C)C GTEXIOINCJRBIO-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- RCXHRHWRRACBTK-UHFFFAOYSA-N 3-(oxiran-2-ylmethoxy)propane-1,2-diol Chemical compound OCC(O)COCC1CO1 RCXHRHWRRACBTK-UHFFFAOYSA-N 0.000 description 1
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical group C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 description 1
- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- SVYKKECYCPFKGB-UHFFFAOYSA-N N,N-dimethylcyclohexylamine Chemical compound CN(C)C1CCCCC1 SVYKKECYCPFKGB-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- NUMHJBONQMZPBW-UHFFFAOYSA-K bis(2-ethylhexanoyloxy)bismuthanyl 2-ethylhexanoate Chemical compound [Bi+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O NUMHJBONQMZPBW-UHFFFAOYSA-K 0.000 description 1
- ZZUFUNZTPNRBID-UHFFFAOYSA-K bismuth;octanoate Chemical compound [Bi+3].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O.CCCCCCCC([O-])=O ZZUFUNZTPNRBID-UHFFFAOYSA-K 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- QAEKNCDIHIGLFI-UHFFFAOYSA-L cobalt(2+);2-ethylhexanoate Chemical compound [Co+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O QAEKNCDIHIGLFI-UHFFFAOYSA-L 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012973 diazabicyclooctane Substances 0.000 description 1
- AYOHIQLKSOJJQH-UHFFFAOYSA-N dibutyltin Chemical compound CCCC[Sn]CCCC AYOHIQLKSOJJQH-UHFFFAOYSA-N 0.000 description 1
- 239000012975 dibutyltin dilaurate Substances 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000009533 lab test Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- OJURWUUOVGOHJZ-UHFFFAOYSA-N methyl 2-[(2-acetyloxyphenyl)methyl-[2-[(2-acetyloxyphenyl)methyl-(2-methoxy-2-oxoethyl)amino]ethyl]amino]acetate Chemical compound C=1C=CC=C(OC(C)=O)C=1CN(CC(=O)OC)CCN(CC(=O)OC)CC1=CC=CC=C1OC(C)=O OJURWUUOVGOHJZ-UHFFFAOYSA-N 0.000 description 1
- POULHZVOKOAJMA-UHFFFAOYSA-N methyl undecanoic acid Natural products CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical group CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- ZUFQCVZBBNZMKD-UHFFFAOYSA-M potassium 2-ethylhexanoate Chemical compound [K+].CCCCC(CC)C([O-])=O ZUFQCVZBBNZMKD-UHFFFAOYSA-M 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
- C08F290/064—Polymers containing more than one epoxy group per molecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/67—Unsaturated compounds having active hydrogen
- C08G18/671—Unsaturated compounds having only one group containing active hydrogen
- C08G18/672—Esters of acrylic or alkyl acrylic acid having only one group containing active hydrogen
- C08G18/673—Esters of acrylic or alkyl acrylic acid having only one group containing active hydrogen containing two or more acrylate or alkylacrylate ester groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/80—Masked polyisocyanates
- C08G18/8061—Masked polyisocyanates masked with compounds having only one group containing active hydrogen
- C08G18/8093—Compounds containing active methylene groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/10—Encapsulated ingredients
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D151/00—Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
- C09D151/08—Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D175/00—Coating compositions based on polyureas or polyurethanes; Coating compositions based on derivatives of such polymers
- C09D175/04—Polyurethanes
- C09D175/14—Polyurethanes having carbon-to-carbon unsaturated bonds
- C09D175/16—Polyurethanes having carbon-to-carbon unsaturated bonds having terminal carbon-to-carbon unsaturated bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Conductive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Photovoltaic Devices (AREA)
Description
本出願は、どちらも2011年12月13日付で出願され、参照することによって本明細書に組み込まれる、米国特許仮出願第61/569,853号および同第61/569,889号の優先権を主張する。
Claims (12)
- 導電性熱硬化性組成物であって:
70重量%〜92重量%の導電性粒子であって、導電性粒子は、0.2〜2m2/gの表面積を有する銀でコーティングされた銅の粒子であり、銅合金コアと銀シェルとを含む、導電性粒子;および
70℃より高い温度および250℃以下の温度で硬化することができる硬化性ポリマー組成物であって、ヒドロキシル基を有するエチレン性不飽和モノマーまたはオリゴマー、および200℃より低い非ブロッキング温度を有するブロック化イソシアネートを含む硬化性ポリマー組成物;
を含む、前記組成物。 - コアが前記銀でコーティングされた銅の粒子のそれぞれの80〜98重量%を占め、そしてシェルが前記銀でコーティングされた銅の粒子のそれぞれの2〜20重量%を占める、請求項1記載の組成物。
- 導電性粒子が0.01ミクロン〜50ミクロンのD50粒子サイズを有する、請求項1記載の組成物。
- 導電性粒子が銀でコーティングされた銅合金のフレークである、請求項1記載の組成物。
- 導電性粒子が0.1〜6g/ccのタップ密度を有する、請求項1記載の組成物。
- 硬化性ポリマー組成物が無溶媒である、請求項1記載の組成物。
- 基体上に導電性層を形成する方法であって:
70重量%〜92重量%の導電性粒子であって、導電性粒子は、0.2〜2m2/gの表面積を有する銀でコーティングされた銅合金の粒子であり、銅合金コアと銀シェルとを含む、導電性粒子;および
70℃より高い温度および250℃以下の温度で硬化することができる硬化性ポリマー組成物であって、ヒドロキシル基を有するエチレン性不飽和モノマーまたはオリゴマーおよび200℃より低い非ブロッキング温度を有するブロック化イソシアネートを含む硬化性ポリマー組成物;
を含む組成物を形成し;
組成物を基体上に1〜100ミクロンの厚さに施用し;そして
施用された組成物を250℃未満の温度まで加熱して導電性層を形成することを含む、前記方法。 - 複数の層、および導電性部材を含む光起電デバイスであって、前記導電性部材が
70重量%〜92重量%の導電性粒子であって、導電性粒子は、0.2〜2m2/gの表面積を有する銀でコーティングされた銅合金の粒子であり、銅合金コアと銀シェルとを含む導電性粒子、および
700℃より高い温度および250℃以下の温度で硬化することができる硬化性ポリマー組成物であって、ヒドロキシル基を有するエチレン性不飽和モノマーまたはオリゴマーおよび200℃より低い非ブロッキング温度を有するブロック化イソシアネートを含む硬化性ポリマー組成物を熱硬化させることによって形成されるポリマーマトリックス
を含む組成物から形成された、前記デバイス。 - 複数の層がアモルファスシリコン、結晶シリコン、または両者の層を含む、請求項8記載の光起電デバイス。
- 複数の層がP−I−Nダイオードを含む、請求項8記載の光起電デバイス。
- 複数の層が銅インジウムガリウム(ジ)セレニド(CIGS)の層を含む、請求項8記載の光起電デバイス。
- 複数の層がアルミニウムの層と、結晶シリコン材料の層とを含む、請求項8記載の光起電デバイス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161569889P | 2011-12-13 | 2011-12-13 | |
US201161569853P | 2011-12-13 | 2011-12-13 | |
US61/569,889 | 2011-12-13 | ||
US61/569,853 | 2011-12-13 | ||
PCT/US2012/069368 WO2013090498A1 (en) | 2011-12-13 | 2012-12-13 | Electrically conductive polymeric compositions, contacts, assemblies, and methods |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015507655A JP2015507655A (ja) | 2015-03-12 |
JP6570249B2 true JP6570249B2 (ja) | 2019-09-04 |
Family
ID=48613127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014547399A Expired - Fee Related JP6570249B2 (ja) | 2011-12-13 | 2012-12-13 | 導電性ポリマー組成物、コンタクト、部品、および方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10287442B2 (ja) |
EP (1) | EP2791204B1 (ja) |
JP (1) | JP6570249B2 (ja) |
WO (2) | WO2013090344A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014150302A1 (en) | 2013-03-14 | 2014-09-25 | Dow Corning Corporation | Conductive silicone materials and uses |
US9447308B2 (en) | 2013-03-14 | 2016-09-20 | Dow Corning Corporation | Curable silicone compositions, electrically conductive silicone adhesives, methods of making and using same, and electrical devices containing same |
EP2787511B1 (en) * | 2013-04-02 | 2018-05-30 | Heraeus Deutschland GmbH & Co. KG | Particles comprising Al and Ag in electro-conductive pastes and solar cell preparation |
WO2014186677A1 (en) | 2013-05-16 | 2014-11-20 | Lord Corporation | Aqueous conductive coating |
EP2922101A1 (en) * | 2014-03-19 | 2015-09-23 | Institut für Solarenergieforschung GmbH | Conductive polymer/Si interfaces at the backside of solar cells |
EP2946854A1 (en) * | 2014-05-23 | 2015-11-25 | Heraeus Precious Metals North America Conshohocken LLC | Coated conductive metallic particles |
WO2016029398A1 (en) | 2014-08-28 | 2016-03-03 | E.I. Du Pont De Nemours And Company | Solar cells with copper electrodes |
DE112014006907T5 (de) | 2014-08-28 | 2017-06-08 | E.I. Du Pont De Nemours And Company | Kupfer enthaltende leitfähige Pasten und daraus hergestellte Elektroden |
DE112014006910T5 (de) | 2014-08-28 | 2017-05-18 | E.I. Du Pont De Nemours And Company | Kupferhaltige leitfähige Pasten und daraus hergestellte Elektroden |
JP6151742B2 (ja) * | 2015-06-09 | 2017-06-21 | タツタ電線株式会社 | 導電性ペースト |
WO2017035103A1 (en) * | 2015-08-25 | 2017-03-02 | Plant Pv, Inc | Core-shell, oxidation-resistant particles for low temperature conductive applications |
US10418497B2 (en) | 2015-08-26 | 2019-09-17 | Hitachi Chemical Co., Ltd. | Silver-bismuth non-contact metallization pastes for silicon solar cells |
KR102096131B1 (ko) | 2016-07-04 | 2020-04-01 | 주식회사 엘지화학 | 전기전도성 미립자의 제조방법 및 이를 이용하여 제조된 미립자 |
JP2018037526A (ja) * | 2016-08-31 | 2018-03-08 | 横浜ゴム株式会社 | 接続部付太陽電池セル及び太陽電池モジュール |
US10711141B1 (en) * | 2016-10-04 | 2020-07-14 | Triton Systems, Inc. | Nickel free conductive filler |
US11773271B2 (en) * | 2018-10-19 | 2023-10-03 | University Of South Florida | Conductive paste based on nano-hybrid materials |
US20220098409A1 (en) * | 2019-01-11 | 2022-03-31 | Dupont Polymers, Inc. | Electrically insulating and thermally conductive polymer compositions |
US11289238B2 (en) * | 2019-12-04 | 2022-03-29 | Heraeus Precious Metals North America Conshohocken Llc | Compositions for the filling of high aspect ratio vertical interconnect access (VIA) holes |
DE102023106179A1 (de) | 2023-03-13 | 2024-04-04 | HighLine Technology GmbH | Verfahren zum Anordnen einer elektrisch leitenden Kontaktierungsstruktur an eine Solarzelle sowie Druckkopf und Druckeinheit zum Ausbilden einer Mehrzahl von elektrisch leitenden Kontaktierungselementen |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6147760A (ja) * | 1984-08-16 | 1986-03-08 | Shin Etsu Polymer Co Ltd | 異方導電接着剤 |
JPS62164757A (ja) | 1986-01-14 | 1987-07-21 | Shinto Paint Co Ltd | 導電性回路を形成する方法 |
US4695404A (en) * | 1986-04-07 | 1987-09-22 | Amerasia International Technology, Inc. | Hyperconductive filled polymers |
JPH01201485A (ja) | 1988-02-05 | 1989-08-14 | Kobe Steel Ltd | 金属微粉末のAg無電解めっき方法 |
CA1339810C (en) | 1988-08-29 | 1998-04-14 | Marian J. Ostolski | Process for the preparation of noble metal coated non-noble metal substrates, coated materials produced in accordance therewith and compositions utilizing the coated materials |
US5476688A (en) | 1988-08-29 | 1995-12-19 | Ostolski; Marian J. | Process for the preparation of noble metal coated non-noble metal substrates, coated materials produced in accordance therewith and compositions utilizing the coated materials |
US5139819A (en) * | 1990-04-17 | 1992-08-18 | Advanced Products, Inc. | Fast curing and storage stable thermoset polymer thick film compositions |
US5707554A (en) * | 1996-05-08 | 1998-01-13 | Rexam Graphics, Incorporated | Electrically conductive surface release polymers |
US5855820A (en) * | 1997-11-13 | 1999-01-05 | E. I. Du Pont De Nemours And Company | Water based thick film conductive compositions |
US6013203A (en) | 1998-08-19 | 2000-01-11 | Enthone-Omi, Inc. | Coatings for EMI/RFI shielding |
US6555762B2 (en) | 1999-07-01 | 2003-04-29 | International Business Machines Corporation | Electronic package having substrate with electrically conductive through holes filled with polymer and conductive composition |
US6905637B2 (en) * | 2001-01-18 | 2005-06-14 | General Electric Company | Electrically conductive thermoset composition, method for the preparation thereof, and articles derived therefrom |
US6515237B2 (en) * | 2000-11-24 | 2003-02-04 | Hitachi Chemical Company, Ltd. | Through-hole wiring board |
US7183891B2 (en) * | 2002-04-08 | 2007-02-27 | Littelfuse, Inc. | Direct application voltage variable material, devices employing same and methods of manufacturing such devices |
JP3879749B2 (ja) * | 2003-07-08 | 2007-02-14 | 日立化成工業株式会社 | 導電粉及びその製造方法 |
US7083859B2 (en) * | 2003-07-08 | 2006-08-01 | Hitachi Chemical Co., Ltd. | Conductive powder and method for preparing the same |
KR100719993B1 (ko) * | 2003-09-26 | 2007-05-21 | 히다치 가세고교 가부시끼가이샤 | 혼합 도전 분말 및 그의 이용 |
KR100804840B1 (ko) | 2004-08-03 | 2008-02-20 | 히다치 가세고교 가부시끼가이샤 | 도전 페이스트 및 그것을 이용한 전자부품 탑재기판 |
JP4660701B2 (ja) | 2004-12-03 | 2011-03-30 | Dowaエレクトロニクス株式会社 | 銀被覆銅粉およびその製造方法並びに導電ペースト |
JP4583164B2 (ja) | 2004-12-28 | 2010-11-17 | 三井金属鉱業株式会社 | 銀銅複合粉及び銀銅複合粉の製造方法 |
WO2006095611A1 (ja) * | 2005-03-11 | 2006-09-14 | Toyo Ink Mfg. Co., Ltd. | 導電性インキ、導電回路、及び非接触型メディア |
JP5105134B2 (ja) * | 2005-05-13 | 2012-12-19 | 株式会社スリーボンド | 硬化性組成物及びそれを用いた放熱部材の形成方法 |
TWI448527B (zh) * | 2005-11-08 | 2014-08-11 | Toyo Ink Mfg Co | 硬化性電磁波遮蔽性黏著性薄膜,其製造方法,及其使用方法,暨電磁波遮蔽物之製造方法及電磁波遮蔽物 |
US20090280326A1 (en) | 2006-04-12 | 2009-11-12 | Thomas Giesenberg | Process for the Treatment of Metal Coated Particles |
US20080057233A1 (en) * | 2006-08-29 | 2008-03-06 | Harrison Daniel J | Conductive thermal transfer ribbon |
KR100787381B1 (ko) * | 2006-11-16 | 2007-12-24 | 한국과학기술연구원 | 미세 캡슐-도전성 입자 복합체, 이의 제조 방법 및 이를이용한 이방 도전성 접착 필름 |
US20100096014A1 (en) * | 2006-12-25 | 2010-04-22 | Hideyo Iida | Conductive paste for solar cell |
WO2008118947A1 (en) * | 2007-03-26 | 2008-10-02 | Lord Corporation | Method for producing heterogeneous composites |
US20090211626A1 (en) * | 2008-02-26 | 2009-08-27 | Hideki Akimoto | Conductive paste and grid electrode for silicon solar cells |
US20100000123A1 (en) * | 2008-07-03 | 2010-01-07 | Shuo-Hsiu Johnny Chang | Hygienic footwear cushion and the method of manufacturing the same |
US8617427B2 (en) * | 2008-10-22 | 2013-12-31 | Heraeus Precious Metals North America Conshohocken Llc | Electrically conductive polymeric compositions, contacts, assemblies and methods |
JP5219140B2 (ja) * | 2008-10-24 | 2013-06-26 | 東洋紡株式会社 | めっき用低温硬化導電性ペースト、およびそれを使用した電気配線 |
TWI390005B (zh) * | 2008-12-31 | 2013-03-21 | Eternal Chemical Co Ltd | 無溶劑導電膠組成物及使用該組成物之太陽能電池元件 |
US20110129673A1 (en) * | 2009-12-01 | 2011-06-02 | Henkel Corporation | Silver-coated boron nitride particulate materials and formulations containing same |
JP5833809B2 (ja) * | 2010-02-01 | 2015-12-16 | デクセリアルズ株式会社 | 異方性導電フィルム、接合体及び接続方法 |
US20120119163A1 (en) | 2010-11-17 | 2012-05-17 | E. I. Du Pont De Nemours And Company | Solderable polymer thick film silver electrode composition for use in thin-film photovoltaic cells and other applications |
US8704087B2 (en) * | 2011-06-01 | 2014-04-22 | E I Du Pont De Nemours And Company | Solderable polymer thick film conductive electrode composition for use in thin-film photovoltaic cells and other applications |
-
2012
- 2012-12-12 WO PCT/US2012/069117 patent/WO2013090344A1/en active Application Filing
- 2012-12-13 WO PCT/US2012/069368 patent/WO2013090498A1/en active Application Filing
- 2012-12-13 EP EP12858309.3A patent/EP2791204B1/en not_active Not-in-force
- 2012-12-13 JP JP2014547399A patent/JP6570249B2/ja not_active Expired - Fee Related
- 2012-12-13 US US14/363,120 patent/US10287442B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10287442B2 (en) | 2019-05-14 |
EP2791204A1 (en) | 2014-10-22 |
WO2013090498A1 (en) | 2013-06-20 |
WO2013090344A1 (en) | 2013-06-20 |
US20140332071A1 (en) | 2014-11-13 |
EP2791204A4 (en) | 2015-09-30 |
EP2791204B1 (en) | 2019-10-23 |
JP2015507655A (ja) | 2015-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6570249B2 (ja) | 導電性ポリマー組成物、コンタクト、部品、および方法 | |
US9082899B2 (en) | Electrically conductive polymeric compositions, contacts, assemblies, and methods | |
EP2791946B1 (en) | Composition and conductor formed therefrom | |
EP2791979B1 (en) | Photovoltaic cell and method of forming the same | |
TWI604625B (zh) | 太陽電池模組及其製造方法 | |
NL2009382C2 (en) | Method for manufacturing a solar cell and solar cell obtained therewith. | |
JP2011165668A (ja) | 導電性アルミニウムペースト及びその製造方法、太陽電池及びそのモジュール | |
US20140345685A1 (en) | Photovoltaic Cell And Method Of Forming The Same | |
CN104025308B (zh) | 太阳能电池装置及其制造方法 | |
CN104011874A (zh) | 太阳能电池及其制备方法 | |
CN116376469A (zh) | 一种多功能复合胶膜其制备方法和应用 | |
Mizuno et al. | Cu nanoparticle array-mediated III–V/Si integration: Application in series-connected tandem solar cells | |
TWI598887B (zh) | 電極組成物、使用其製造的電極以及太陽電池 | |
EP2618386B1 (en) | Bifacial solar cell | |
KR101587267B1 (ko) | 알루미늄 전극 페이스트 및 이를 이용한 태양전지소자 | |
CN218215315U (zh) | Perc太阳能电池片、电池组件和光伏*** | |
Nishimura et al. | Peeling Technique by Two-Dimensional MoSe 2 Atomic Layer for Bifacial-Flexible Cu (In, Ga) Se 2 solar cells | |
WO2024124299A1 (en) | A method for forming an electrical connection on a surface of a substrate | |
CN113421931A (zh) | 太阳能电池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140813 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151013 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160824 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160913 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161212 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170523 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20170530 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20170623 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180808 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180907 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190221 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190806 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6570249 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |