JP6564139B2 - 液晶パネルに用いられるアレイ基板及びその製造方法 - Google Patents
液晶パネルに用いられるアレイ基板及びその製造方法 Download PDFInfo
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- JP6564139B2 JP6564139B2 JP2018526707A JP2018526707A JP6564139B2 JP 6564139 B2 JP6564139 B2 JP 6564139B2 JP 2018526707 A JP2018526707 A JP 2018526707A JP 2018526707 A JP2018526707 A JP 2018526707A JP 6564139 B2 JP6564139 B2 JP 6564139B2
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- layer
- electrode
- polycrystalline silicon
- insulating layer
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- 239000000758 substrate Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 79
- 239000010409 thin film Substances 0.000 claims description 46
- 238000002161 passivation Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- -1 for example Substances 0.000 description 2
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- 229910021389 graphene Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
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- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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Description
Claims (8)
- 液晶パネルに用いられるアレイ基板であって、
前記アレイ基板は、
基板と、
前記基板上に配置された低温多結晶シリコン薄膜トランジスタと、
前記低温多結晶シリコン薄膜トランジスタを被覆する平坦化層と、
前記低温多結晶シリコン薄膜トランジスタのドレイン電極が露出され、前記平坦化層の中に形成されたスルーホールと、
タッチ段階において駆動電極として使用され、且つ一体に接続され、前記平坦化層上に配置された間隔を開けて配列する共通電極と受信電極と、
前記共通電極、前記受信電極と前記平坦化層を被覆するパッシベーション層と、
前記スルーホールを介して前記ドレイン電極と接触し、前記パッシベーション層上に配置された画素電極と、
を含み、
前記アレイ基板は、更に、
前記共通電極が露出され、前記パッシベーション層の中に配置された第3貫通孔と、
前記パッシベーション層上に配置され、前記画素電極と接触しない接続電極と、
を含み、
前記接続電極は前記第3貫通孔を介して前記共通電極と接触し、間隔を開けて切断された前記共通電極を一体に接続させる、
ことを特徴とする液晶パネルに用いられるアレイ基板。 - 前記共通電極と前記受信電極は同時に形成される、
ことを特徴とする請求項1に記載のアレイ基板。 - 前記画素電極と前記接続電極は同時に形成される、
ことを特徴とする請求項1に記載のアレイ基板。 - 前記アレイ基板は、更に、
前記低温多結晶シリコン薄膜トランジスタに対向して設置され、前記基板と前記低温多結晶シリコン薄膜トランジスタの間に配置された遮光層と、
前記遮光層及び前記基板を被覆し、前記遮光層と前記低温多結晶シリコン薄膜トランジスタの間に配置された第1絶縁層と、を含む、
ことを特徴とする請求項1に記載のアレイ基板。 - 前記低温多結晶シリコン薄膜トランジスタは、
前記第1絶縁層上に配置された多結晶シリコン層と、
前記第1絶縁層上の前記多結晶シリコン層を被覆する第2絶縁層と、
前記第2絶縁層上に配置されたゲート電極と、
前記第2絶縁層上の前記ゲート電極を被覆する第3絶縁層と、
前記多結晶シリコン層の表面が露出され、前記第3絶縁層と前記第2絶縁層との中に形成された第1貫通孔及び第2貫通孔と、
前記第3絶縁層上に配置されたソース電極とドレイン電極と、
を含み、
前記ソース電極は前記第1貫通孔を充填して前記多結晶シリコン層の表面と接触し、前記ドレイン電極は前記第2貫通孔を充填して前記多結晶シリコン層の表面と接触し、
前記平坦化層は前記第3絶縁層上に配置され且つ前記ソース電極と前記ドレイン電極を被覆する、
ことを特徴とする請求項4に記載のアレイ基板。 - 液晶パネルに用いられるアレイ基板の製造方法であって、
前記製造方法は、
基板を提供することと、
前記基板に低温多結晶シリコン薄膜トランジスタを形成することと、
前記低温多結晶シリコン薄膜トランジスタを被覆する平坦化層を形成することと、
前記平坦化層に前記低温多結晶シリコン薄膜トランジスタのドレイン電極が露出されるスルーホールを形成することと、
前記平坦化層にタッチ段階において駆動電極として使用され、且つ一体に接続され、間隔を開けて配列する共通電極と受信電極を同時に形成することと、
前記共通電極、前記受信電極と前記平坦化層を被覆するパッシベーション層を形成することと、
前記パッシベーション層に前記スルーホールを介して前記ドレイン電極と接触する画素電極を形成することと、
を含み、
前記製造方法は、更に、
前記パッシベーション層を形成した後、前記パッシベーション層に前記共通電極が露出される第3貫通孔を形成することと、
前記画素電極を形成すると同時に前記パッシベーション層に前記画素電極と接触しない接続電極を形成することと、
を含み、
前記接続電極は前記第3貫通孔を介して前記共通電極と接触し、間隔を開けて切断された前記共通電極を一体に接続させる、
ことを特徴とする液晶パネルに用いられるアレイ基板の製造方法。 - 前記製造方法は、更に、
前記低温多結晶シリコン薄膜トランジスタを形成する前、前記基板上に前記低温多結晶シリコン薄膜トランジスタに対向して設置する遮光層を形成することと、
前記基板に前記遮光層を被覆する第1絶縁層を形成することと、
を含む、
ことを特徴とする請求項6に記載の製造方法。 - 前記低温多結晶シリコン薄膜トランジスタの製造方法は、具体的に、
前記第1絶縁層に多結晶シリコン層を形成することと、
前記第1絶縁層に前記多結晶シリコン層を被覆する第2絶縁層を形成することと、
前記第2絶縁層にゲート電極を形成することと、
前記第2絶縁層に前記ゲート電極を被覆する第3絶縁層を形成することと、
前記多結晶シリコン層の表面が露出され、前記第3絶縁層と前記第2絶縁層に第1貫通孔と第2貫通孔を形成することと、
前記第3絶縁層にソース電極とドレイン電極を形成することと、
を含み、
前記ソース電極は前記第1貫通孔を充填して前記多結晶シリコン層の表面と接触し、前記ドレイン電極は前記第2貫通孔を充填して前記多結晶シリコン層の表面と接触し、
前記平坦化層は前記第3絶縁層上に配置され且つ前記ソース電極と前記ドレイン電極を被覆する、
ことを特徴とする請求項7に記載の製造方法。
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CN201510827673.9 | 2015-11-24 | ||
PCT/CN2015/095816 WO2017088179A1 (zh) | 2015-11-24 | 2015-11-27 | 用于液晶面板中的阵列基板及其制作方法 |
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CN105489552B (zh) * | 2016-01-28 | 2018-08-14 | 武汉华星光电技术有限公司 | Ltps阵列基板的制作方法 |
CN105810692A (zh) * | 2016-04-18 | 2016-07-27 | 京东方科技集团股份有限公司 | 阵列基板、显示面板、显示装置及阵列基板制作方法 |
CN106298955A (zh) * | 2016-09-07 | 2017-01-04 | 武汉华星光电技术有限公司 | 低温多晶硅薄膜晶体管及其制作方法、液晶面板及显示器 |
KR102599536B1 (ko) * | 2017-01-26 | 2023-11-08 | 삼성전자 주식회사 | 생체 센서를 갖는 전자 장치 |
CN106847743B (zh) * | 2017-02-07 | 2019-12-24 | 武汉华星光电技术有限公司 | Tft基板及其制作方法 |
CN107146770B (zh) * | 2017-05-10 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种阵列基板的制备方法、阵列基板和显示装置 |
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US10330991B1 (en) * | 2018-05-31 | 2019-06-25 | a.u. Vista Inc. | Liquid crystal display devices with electrode stacks and methods for manufacturing such devices |
CN109768054B (zh) | 2019-02-25 | 2020-11-10 | 云谷(固安)科技有限公司 | 阵列基板及显示屏 |
US11626579B2 (en) * | 2020-06-09 | 2023-04-11 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED display panel with light shielding layer disposed on touch structure |
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CN104951132B (zh) * | 2015-06-02 | 2018-08-28 | 业成光电(深圳)有限公司 | 触控显示面板结构 |
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