JP6542854B2 - セラミックコーティングを有する熱処理されたセラミック基板及びコートされたセラミックスへの熱処理 - Google Patents
セラミックコーティングを有する熱処理されたセラミック基板及びコートされたセラミックスへの熱処理 Download PDFInfo
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Description
ここでFは力であり、Aは面積であり、Hは距離である。熱処理温度が室温から約500℃に上昇するにつれて、ファンデルワールス力は弱まり、熱膨張が距離Hの増加を引き起こし得る。熱処理温度が500℃から約1200℃に上昇するにつれて、距離Hの減少に少なくとも部分的に起因して、ファンデルワールス力が強くなり得る。このような距離の減少は、基板表面吸収粒子及び/または変形に起因し得る。
ここでFは力であり、γは液体−気体表面張力であり、Rは粒子と基板表面との間の界面の有効半径であり、θは接触角である。これらの温度では、粒子は液体中へと拡散し得、対応するグレイン上で再成長し得る。これによって、セラミック物品が冷却された後であっても、基板表面から粒子が除去され得る。
105 炉
115 自動機器レイヤ
120 計算装置
150 プロセス
155、160、165、170 ブロック
202、204、206、212、214、216 顕微鏡写真
222、224、226、228、230、232、234 顕微鏡写真
236、238、240、242、244、246、248 顕微鏡写真
250、252、254、256 顕微鏡写真
302、304 顕微鏡写真
308 元素マップ
310 セラミックコーティング
312 遷移層
314 セラミック基板
320、322、324、326、328、330、332 顕微鏡写真
350、352、354、356 顕微鏡写真
370 ギャップ
Claims (13)
- Al 2 O 3 を含むセラミック基板と、
セラミック基板上のセラミックコーティングであって、イットリウム含有固溶体を含む非焼結セラミックコーティングであり、セラミック基板とは異なる組成を有し、Y 4 Al 2 O 9 と固溶体Y 2 O 3 −ZrO 2 との化合物を含むセラミックコーティングと、
セラミック基板とセラミックコーティングとの間の遷移層であって、セラミック基板由来の第2の元素と反応したセラミックコーティング由来の第1の元素を含み、Y 3 Al 5 O 12 (YAG)を含み、1ミクロン〜5ミクロンの厚さを有する遷移層とを含むセラミック物品。 - セラミック物品は、修復されたセラミック基板である、請求項1記載のセラミック物品。
- セラミックコーティングは、セラミックコーティングへの破壊されていない結合を有するセラミックコーティングの表面に複数の溶融した粒子を含む、請求項1記載のセラミック物品。
- 遷移層は、非多孔性であり、プロセスガスに非反応である、請求項1記載のセラミック物品。
- セラミックコーティングは、12メガパスカルの接着強度でセラミック基板に接着している、請求項1記載のセラミック物品。
- セラミック物品は、プラズマエッチャ用のプロセスチャンバーコンポーネントである、請求項1記載のセラミック物品。
- セラミック基板上に、a)固溶体Y 2 O 3 −ZrO 2 、又はb)Y 4 Al 2 O 9 と固溶体Y 2 O 3 −ZrO 2 とを含むセラミックコーティングを形成するために溶射プロセスを実行する工程であって、セラミックコーティングは、初期空隙率、初期のクラック量、初期粒子数、及び初期接着強度を有する工程と、
0.1℃/分〜20℃/分のランプレートで1000℃〜1800℃の間の温度範囲にセラミックコーティングを加熱する工程と、
セラミックコーティングの空隙率を初期空隙率未満に減少させ、セラミックコーティングのクラックの量を初期のクラック量未満に減少させ、セラミックコーティングの接着強度を初期接着強度未満に減少させるために、最大24時間の間、前記温度範囲内の1以上の温度でセラミックコーティングの熱処理を実行する工程であって、セラミックコーティングは、セラミックコーティングの焼結を防止するために、セラミックコーティングの焼結温度未満で熱処理される工程と、
熱処理後に前記ランプレートでセラミックコーティングを冷却する工程であって、熱処理後にセラミックコーティングは、焼結されず、初期のクラック量未満の減少したクラック量を有し、初期空隙率未満の減少した空隙率を有し、初期接着強度を超える増加した接着強度を有する工程とを含む方法。 - セラミックコーティングは、SiO2、B2O3、Er2O3、Nd2O3、Nb2O5、CeO2、Sm2O3、及びYb2O3のうちの1つによってドープされる、請求項7記載の方法。
- セラミック基板は、Y2O3、Al2O3、Y4Al2O9、Y3Al5O12(YAG)、石英、SiC、Si3N4、AlN、又はSiC−Si3N4のうちの少なくとも1つからなる、請求項7記載の方法。
- セラミック基板及びセラミックコーティングは、セラミックコーティングとセラミック基板との間に遷移層を形成するために熱処理中に反応するセラミックを含む、請求項9記載の方法。
- 熱処理は、セラミック基板とセラミックコーティングとの間に遷移層を形成するために、セラミックコーティングをセラミック基板と反応させ、期間及び温度範囲は、遷移層が1ミクロン〜5ミクロンの厚さを有するように選択される、請求項7記載の方法。
- ポリマーがセラミックコーティング上に形成された後に、加熱する工程、熱処理する工程、及び冷却する工程を、空気の存在下で繰り返す工程を含み、空気の存在下で熱処理を繰り返す工程は、ポリマーに空気と反応してガスとなるようにさせることにより、セラミックコーティングを洗浄する、請求項7記載の方法。
- セラミックコーティングはY 4 Al 2 O 9 と固溶体Y 2 O 3 −ZrO 2 とを含む請求項7記載の方法。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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US201261602020P | 2012-02-22 | 2012-02-22 | |
US61/602,020 | 2012-02-22 | ||
US201261619854P | 2012-04-03 | 2012-04-03 | |
US61/619,854 | 2012-04-03 | ||
US13/745,589 US9212099B2 (en) | 2012-02-22 | 2013-01-18 | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
US13/745,589 | 2013-01-18 |
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- 2013-02-22 TW TW102106241A patent/TWI573778B/zh active
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JP6293064B2 (ja) | 2018-03-14 |
US20130216821A1 (en) | 2013-08-22 |
US10364197B2 (en) | 2019-07-30 |
TWI573778B (zh) | 2017-03-11 |
JP2019206470A (ja) | 2019-12-05 |
CN108249957A (zh) | 2018-07-06 |
KR20170102370A (ko) | 2017-09-08 |
KR102067107B1 (ko) | 2020-01-16 |
CN107382376B (zh) | 2021-08-17 |
CN107382376A (zh) | 2017-11-24 |
TW201343603A (zh) | 2013-11-01 |
CN105492400A (zh) | 2016-04-13 |
JP2015512848A (ja) | 2015-04-30 |
KR102067108B1 (ko) | 2020-01-16 |
JP2018048072A (ja) | 2018-03-29 |
JP6878504B2 (ja) | 2021-05-26 |
KR20140138190A (ko) | 2014-12-03 |
US20190233343A1 (en) | 2019-08-01 |
WO2013126466A1 (en) | 2013-08-29 |
US11279661B2 (en) | 2022-03-22 |
US20210317049A1 (en) | 2021-10-14 |
US9212099B2 (en) | 2015-12-15 |
CN108249957B (zh) | 2021-07-16 |
US20160060181A1 (en) | 2016-03-03 |
JP2021120346A (ja) | 2021-08-19 |
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