JP6537891B2 - 発光装置及びその製造方法 - Google Patents
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- JP6537891B2 JP6537891B2 JP2015105097A JP2015105097A JP6537891B2 JP 6537891 B2 JP6537891 B2 JP 6537891B2 JP 2015105097 A JP2015105097 A JP 2015105097A JP 2015105097 A JP2015105097 A JP 2015105097A JP 6537891 B2 JP6537891 B2 JP 6537891B2
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Description
11 金属パターン
12 AuSnペースト(AuSn共晶接合層)
20 LED素子
20a 半導体層
20b 支持基板
30 波長変換部材
31 蛍光体支持基板
32 凸部
33 第1蛍光体層
34 遮光層
35 第2蛍光体層(蛍光体分散液)
36 開口部
40 接着層
51 基板
52 金属パターン
53 接合層
54 LED素子
54a 半導体層
54b 支持基板
55 蛍光体層
56 遮光層
61 加工ドリル
62 ディスペンサーノズル
63 研磨定盤
Claims (19)
- 複数の発光素子と、
前記複数の発光素子上または上方に配置された蛍光体層と、
前記蛍光体層に配置された遮光層であって、隣接する2つの発光素子について見たとき、前記2つの発光素子の間の領域の中心を基準として、該中心よりも、前記2つの発光素子の各々の中心に近づいた位置に1層ずつ配置された遮光層と
を有し、
前記遮光層は、前記蛍光体層を、平面視上、前記発光素子の中心位置と重なる蛍光体領域と、前記発光素子の間の領域と重なる蛍光体領域とに区画する発光装置。 - 前記遮光層は、平面視上、前記発光素子と重なる位置に配置される請求項1に記載の発光装置。
- 前記遮光層は、前記発光素子の中心位置と前記発光素子の輪郭線の中線を基準として、前記発光素子の中心位置とは反対側に配置される請求項1または2に記載の発光装置。
- 複数の発光素子と、
前記複数の発光素子上または上方に配置された蛍光体層と、
前記蛍光体層に配置された遮光層であって、隣接する2つの発光素子について見たとき、前記2つの発光素子の間の領域の中心を基準として、該中心よりも、前記2つの発光素子の各々の中心に近づいた位置に1層ずつ配置された遮光層と
を有し、
前記発光素子の間の領域上方の、または前記発光素子の間の領域上方に近接する蛍光体領域の波長変換効率が、前記発光素子の中心位置上方の、または前記発光素子の中心位置上方に近接する蛍光体領域の波長変換効率より低い発光装置。 - 前記蛍光体層は、凸部を有する基板上に形成され、前記遮光層は、前記凸部に沿って配置される請求項1〜4のいずれか1項に記載の発光装置。
- 前記凸部は、前記発光素子の各々の輪郭線に沿って、連続的にまたは断続的に配置される請求項5に記載の発光装置。
- 前記凸部は、前記発光素子の間の領域の上方に配置される請求項5または6に記載の発光装置。
- 前記凸部は、平面視上、前記凸部の中心と、前記発光素子の間の領域の中心が一致するように配置される請求項7に記載の発光装置。
- 複数の発光素子と、
前記複数の発光素子上または上方に配置された蛍光体層と、
前記蛍光体層に配置された遮光層であって、隣接する2つの発光素子について見たとき、前記2つの発光素子の間の領域の中心を基準として、該中心よりも、前記2つの発光素子の各々の中心に近づいた位置に1層ずつ配置された遮光層と
を有し、
前記蛍光体層は、凸部を有する基板上に形成され、前記遮光層は、前記凸部に沿って配置され、
前記凸部の側面に蛍光体領域が形成され、該蛍光体領域上に前記遮光層が形成される発光装置。 - 前記凸部の側面及び上面に蛍光体領域が形成される請求項9に記載の発光装置。
- 前記凸部を有する基板は、前記凸部が形成されていない面が前記発光素子に対向するように配置される請求項5〜10のいずれか1項に記載の発光装置。
- 前記凸部を有する基板は、前記凸部が形成されている面が前記発光素子に対向するように配置される請求項5〜10のいずれか1項に記載の発光装置。
- (a)凸部を備える支持基板を準備する工程と、
(b)前記凸部の上面及び側面上に、第1蛍光体層及び遮光層をこの順に配置する工程と、
(c)前記凸部の形成領域を含む前記支持基板上に、第2蛍光体層を形成する工程と、
(d)少なくとも前記遮光層が除去される厚さまで、前記第2蛍光体層を研磨する工程と、
(e)前記支持基板を、複数の発光素子上または上方に配置する工程と
を有する発光装置の製造方法。 - 前記工程(b)は、
(b1)前記第1蛍光体層として、蛍光体を含有するシートを準備し、前記シート上に前記遮光層を形成する工程と、
(b2)前記遮光層が形成された前記シートを、前記凸部上に配置する工程と
を含む請求項13に記載の発光装置の製造方法。 - 前記工程(e)において、前記支持基板を、前記凸部が、前記発光素子の間の領域の上方に位置するように配置する請求項13または14に記載の発光装置の製造方法。
- 前記工程(e)において、平面視上、前記凸部の中心と、前記発光素子の間の領域の中心が一致するように、前記支持基板を配置する請求項15に記載の発光装置の製造方法。
- 前記工程(d)において、前記第2蛍光体層を、前記凸部上面の前記第1蛍光体層が除去される厚さまで研磨する請求項13〜16のいずれか1項に記載の発光装置の製造方法。
- 前記工程(d)において、前記第2蛍光体層を、前記凸部上面に前記第1蛍光体層が残る厚さに研磨する請求項13〜16のいずれか1項に記載の発光装置の製造方法。
- 前記工程(c)において、前記第1蛍光体層に含まれる蛍光体と同じ蛍光体を用い、前記第2蛍光体層を形成する請求項13〜18のいずれか1項に記載の発光装置の製造方法。
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JP2015105097A JP6537891B2 (ja) | 2015-05-25 | 2015-05-25 | 発光装置及びその製造方法 |
US15/157,052 US9935249B2 (en) | 2015-05-25 | 2016-05-17 | Light emitting device and method for manufacturing the same |
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Families Citing this family (13)
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DE102015109413A1 (de) * | 2015-06-12 | 2016-12-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Konversions-Halbleiterchips und Verbund von Konversions-Halbleiterchips |
JP6428730B2 (ja) * | 2016-08-24 | 2018-11-28 | 日亜化学工業株式会社 | 発光装置 |
DE102016124873B4 (de) * | 2016-12-19 | 2023-09-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Weißlichtquelle und Verfahren zur Herstellung einer Weißlichtquelle |
JP6939133B2 (ja) * | 2017-06-22 | 2021-09-22 | 豊田合成株式会社 | 発光装置 |
KR102455483B1 (ko) * | 2017-06-30 | 2022-10-19 | 삼성전자주식회사 | Led 장치 및 그 제조 방법 |
US10658558B2 (en) | 2017-10-10 | 2020-05-19 | Lumileds Llc | LED package including converter confinement |
JP2019102715A (ja) * | 2017-12-06 | 2019-06-24 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
US10854794B2 (en) | 2017-12-20 | 2020-12-01 | Lumileds Llc | Monolithic LED array structure |
KR102498211B1 (ko) * | 2018-01-02 | 2023-02-09 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 차량용 램프 |
US11482650B2 (en) | 2018-11-07 | 2022-10-25 | Seoul Viosys Co., Ltd. | Light emitting device including light shielding layer |
US10910433B2 (en) | 2018-12-31 | 2021-02-02 | Lumileds Llc | Pixelated LED array with optical elements |
WO2020212111A1 (en) | 2019-04-18 | 2020-10-22 | Lumileds Holding B.V. | Lighting device |
JP2022155737A (ja) * | 2021-03-31 | 2022-10-14 | 日東電工株式会社 | マイクロledディスプレイ装置 |
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JPH11329726A (ja) * | 1998-05-21 | 1999-11-30 | Sharp Corp | 有機el素子 |
JP3941487B2 (ja) | 2001-12-05 | 2007-07-04 | 日亜化学工業株式会社 | 表示装置 |
JP5320655B2 (ja) * | 2004-06-30 | 2013-10-23 | 三菱化学株式会社 | 発光装置、照明、表示装置用バックライトユニット及び表示装置 |
US7915627B2 (en) * | 2007-10-17 | 2011-03-29 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
KR100891810B1 (ko) * | 2007-11-06 | 2009-04-07 | 삼성전기주식회사 | 백색 발광 소자 |
JP2010087224A (ja) | 2008-09-30 | 2010-04-15 | Toyoda Gosei Co Ltd | Led表示装置およびled表示装置用隔壁の製造方法 |
US20120019740A1 (en) * | 2009-03-19 | 2012-01-26 | Sharp Kabushiki Kaisha | Display panel and display device |
US9117977B2 (en) * | 2010-12-27 | 2015-08-25 | Sharp Kabushiki Kaisha | Light emitting device, display apparatus, and illuminating apparatus |
JP2012169189A (ja) * | 2011-02-15 | 2012-09-06 | Koito Mfg Co Ltd | 発光モジュールおよび車両用灯具 |
JP6153327B2 (ja) * | 2013-01-22 | 2017-06-28 | シチズン電子株式会社 | Ledモジュール |
JP2014220295A (ja) | 2013-05-02 | 2014-11-20 | シチズン電子株式会社 | 発光装置 |
JP6282493B2 (ja) * | 2014-03-12 | 2018-02-21 | スタンレー電気株式会社 | 半導体発光装置 |
JP5808840B2 (ja) * | 2014-05-26 | 2015-11-10 | 株式会社小糸製作所 | 発光モジュールおよび車両用灯具 |
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US9935249B2 (en) | 2018-04-03 |
US20160351620A1 (en) | 2016-12-01 |
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