JP6527835B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6527835B2 JP6527835B2 JP2016076469A JP2016076469A JP6527835B2 JP 6527835 B2 JP6527835 B2 JP 6527835B2 JP 2016076469 A JP2016076469 A JP 2016076469A JP 2016076469 A JP2016076469 A JP 2016076469A JP 6527835 B2 JP6527835 B2 JP 6527835B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- silicon
- work function
- insulator
- columnar semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 87
- 239000002184 metal Substances 0.000 claims description 87
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- 239000012212 insulator Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 41
- 239000010410 layer Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 240000004050 Pentaglottis sempervirens Species 0.000 description 1
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Description
102.第1の絶縁物
103.第3の金属
104.第1の金属
105.第2の金属
106.第3の絶縁物
107.第2の絶縁物
108.第4の金属
109.第5の金属
110.基板
Claims (5)
- 1017cm-3以下の不純物濃度である柱状半導体と、
前記柱状半導体の側面を取り囲む第1の絶縁物と、
前記柱状半導体の一端の前記第1の絶縁物の周囲を取り囲む第1の金属と、
前記柱状半導体の他方の一端の前記第1の絶縁物の周囲を取り囲む第2の金属と、
前記第1の金属と前記第2の金属とに挟まれた領域で前記第1の絶縁物を取り囲む第3の金属と、
を備え、
前記第1の金属と前記第3の金属とは電気的に絶縁され、
前記第2の金属と前記第3の金属とは電気的に絶縁され、
前記第1の金属と前記柱状半導体の一端とは電気的に接続され、
前記第2の金属と前記柱状半導体の他方の一端とは電気的に接続され、
前記第1の金属に取り囲まれた前記柱状半導体の前記一端が、前記第1の金属の仕事関数と柱状半導体層との仕事関数差によりソースドレイン領域を構成し、
前記第2の金属に取り囲まれた前記柱状半導体の前記他方の一端が、前記第2の金属と柱状半導体層との仕事関数差によりソースドレイン領域を構成することを特徴とする半導体装置。 - 前記柱状半導体は、シリコンであることを特徴とする請求項1に記載の半導体装置。
- 前記第1の金属と前記第2の金属の仕事関数は4.0eVから4.2eVの間であることを特徴とする請求項2に記載の半導体装置。
- 前記第1の金属と前記第2の金属の仕事関数は5.0eVから5.2eVの間であることを特徴とする請求項2に記載の半導体装置。
- 前記第3の金属の仕事関数は4.2eVから5.0eVの間であることを特徴とする請求項1に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016076469A JP6527835B2 (ja) | 2016-04-06 | 2016-04-06 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016076469A JP6527835B2 (ja) | 2016-04-06 | 2016-04-06 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014255450A Division JP5917672B2 (ja) | 2014-12-17 | 2014-12-17 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016131256A JP2016131256A (ja) | 2016-07-21 |
JP6527835B2 true JP6527835B2 (ja) | 2019-06-05 |
Family
ID=56415684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016076469A Expired - Fee Related JP6527835B2 (ja) | 2016-04-06 | 2016-04-06 | 半導体装置 |
Country Status (1)
Country | Link |
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JP (1) | JP6527835B2 (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6891234B1 (en) * | 2004-01-07 | 2005-05-10 | Acorn Technologies, Inc. | Transistor with workfunction-induced charge layer |
JP4108537B2 (ja) * | 2003-05-28 | 2008-06-25 | 富士雄 舛岡 | 半導体装置 |
JP2008172164A (ja) * | 2007-01-15 | 2008-07-24 | Toshiba Corp | 半導体装置 |
FR2968125B1 (fr) * | 2010-11-26 | 2013-11-29 | Centre Nat Rech Scient | Procédé de fabrication d'un dispositif de transistor a effet de champ implémenté sur un réseau de nanofils verticaux, dispositif de transistor résultant, dispositif électronique comprenant de tels dispositifs de transistors, et processeur comprenant au moins un tel dispositif électronique |
-
2016
- 2016-04-06 JP JP2016076469A patent/JP6527835B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2016131256A (ja) | 2016-07-21 |
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