JP6487412B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP6487412B2 JP6487412B2 JP2016249021A JP2016249021A JP6487412B2 JP 6487412 B2 JP6487412 B2 JP 6487412B2 JP 2016249021 A JP2016249021 A JP 2016249021A JP 2016249021 A JP2016249021 A JP 2016249021A JP 6487412 B2 JP6487412 B2 JP 6487412B2
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 239000011787 zinc oxide Substances 0.000 description 16
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- 229910052782 aluminium Inorganic materials 0.000 description 13
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 4
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- 229920001621 AMOLED Polymers 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H01L2924/11—Device type
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Description
図5は、第1実施の形態に係る有機発光表示装置のサブピクセルを示す断面図である。図6は、第1実施の形態に係るゲートパッド部を拡大した平面図である。図7は、図6の切取り線I−I’に沿って切り取った断面図である。図8は、図6の切取り線II−II’に 沿って切り取った断面図である。図9は、第1実施の形態に係るデータパッド部を拡大した平面図である。図10は、図9の切取り線III−III’に沿って、切り取った断面図である。図11は、図9の切取り線IV−IV’ に沿って切り取った断面図である。
図12は、第2実施の形態に係る有機発光表示装置のサブピクセルを示す断面図である。図13は、第2実施の形態に係るゲートパッド部を示す断面図である。図14は、第2実施の形態に係るデータパッド部を示す断面図である。図13の断面図は、図6に切取り線II−II’に沿って切り取った断面図と対応することができる。図14の断面図は、図9で切取り線IV−IV’に沿って切り取った断面図である。
Claims (18)
- 入力映像を実現する表示領域と、前記表示領域の外側で段差を有するように互いに交互に設けられる凸部と凹部が定義されたパッド部を有する基板と、
前記パッド部に接合され、前記凹部に引き込まれるバンプを有する回路素子を含み、
前記パッド部は、
前記表示領域から延長された信号ラインと電気的に接続される下部パッド電極と
前記下部パッド電極上で、前記凸部に配置される第1絶縁層と、
前記第1絶縁層上で、前記第1絶縁層を貫通する第1コンタクトホールを介して前記下部パッド電極と接続され、前記凹部の少なくとも一部にまで延長配置される上部パッド電極を含み、
前記凹部の形状は、
平坦面及び前記平坦面の両側辺から延長される2傾斜面によって定義され、
前記上部パッド電極は、
前記2傾斜面の内、いずれか1つを覆って、
前記平坦面の少なくとも一部を覆う、表示装置。 - 前記パッド部と前記回路素子との間に介在される異方性導電フィルムをさらに含み、
前記上部パッド電極は、
前記凹部で、前記異方性導電フィルムを介して前記バンプと接続される、請求項1に記載の表示装置。 - 前記異方性導電フィルムは、
接着樹脂と前記接着樹脂に分散されて配置された複数の導電ボールを含み、
前記導電ボールは、
前記凹部に収容される、請求項2に記載の表示装置。 - 前記パッド部は、
順次定義された第1凸部、第1凹部、第2凸部、第2凹部を含み、
前記上部パッド電極は、
隣接する第1上部パッド電極、第2上部パッド電極を含み、
前記第1凸部の形状は、
第1傾斜面、前記第1傾斜面の側辺に接続された第1平坦面、前記第1平坦面の側辺に接続された第2傾斜面によって定義され、
前記第1凹部の形状は、
前記第2傾斜面、前記第2傾斜面の側辺に接続された第2平坦面、前記第2平坦面の側辺に接続された第3傾斜面によって定義され、
前記第2凸部の形状は、
前記第3傾斜面、前記第3傾斜面の側辺に接続された第3平坦面、前記第3平坦面の側辺に接続された第4傾斜面によって定義され、
前記第2凹部の形状は、
前記第4傾斜面、前記第4傾斜面の側辺に接続された第4平坦面、前記第4平坦面の側辺に接続された第5傾斜面によって定義され、
前記第1上部パッド電極は、
前記第1平坦面の少なくとも一部と、前記第2傾斜面と、前記第2平坦面の少なくとも一部を覆って、
前記第2上部パッド電極は、
前記第3平坦面の少なくとも一部と、前記第4傾斜面と、前記第4平坦面の少なくとも一部を覆う、請求項1に記載の表示装置。 - 前記パッド部は、
前記下部パッド電極と前記第1絶縁層との間に配置される第2絶縁層をさらに含む、請求項1に記載の表示装置。 - 前記第2絶縁層は、
前記パッド部において、前記凸部のみに配置される、請求項5に記載の表示装置。 - 前記信号ラインは、
第3絶縁層を挟んで前記下部パッド電極の下に配置され、前記第3絶縁層を貫通する第3コンタクトホールを介して前記下部パッド電極と接続され、
前記表示領域のゲートラインと接続される、請求項1に記載の表示装置。 - 前記信号ラインは、
前記下部パッド電極と同じ層に配置されて、前記下部パッド電極と接続され、
前記表示領域のデータラインと接続される、請求項1に記載の表示装置。 - 前記表示領域は、複数のサブピクセルを含み、
前記サブピクセルは、
前記基板上に位置する半導体層と、
ゲート絶縁膜を挟んで前記半導体層上に位置し、前記半導体層と一部重畳されたゲート電極と、
前記ゲート電極を覆う層間絶縁膜上において、前記層間絶縁膜を貫通するソースコンタクトホールとドレインコンタクトホールを介して前記半導体層の一側と他側にそれぞれ接続されたソース電極と及びドレイン電極と、
前記ソース電極と前記ドレイン電極を覆う保護層及びオーバーコート層上で、前記保護層及び前記オーバーコート層を貫通するビアホールを介して前記ドレイン電極に接続された第1電極を含み、
前記上部パッド電極は、
前記第1電極と同一層に配置され、同一の物質を含む、請求項1に記載の表示装置。 - 入力映像を実現する表示領域と、前記表示領域の外側で段差を有するように互いに交互に設けられる凸部と凹部が定義されているパッド部を有する基板と、
前記パッド部に接合され、前記凹部に引き込まれるバンプを有する回路素子を含み、
前記パッド部は、
前記表示領域から延長された信号ラインと電気的に接続される下部パッド電極と、
前記下部パッド電極を覆う第1絶縁層と、
前記第1絶縁層上で、前記第1絶縁層を貫通する第1コンタクトホールを介して前記下部パッド電極と接続され、前記凹部の少なくとも一部にまで延長配置される上部パッド電極と、
前記上部パッド電極上で、前記凸部に配置され、前記凹部で前記上部パッド電極を露出させる第2絶縁層を含み、
前記パッド部は、
順次定義された第1凸部、第1凹部、第2凸部、第2凹部を含み、
前記上部パッド電極は、
隣接する第1上部パッド電極、第2上部パッド電極を含み、
前記下部パッド電極は、
隣接する第1下部パッド電極、第2下部パッド電極を含み、
前記第1上部パッド電極は、
前記第1凸部と第1凹部に対応して位置し、
前記第2上部パッド電極は、
前記第2凸部と前記第2凹部に対応して位置し、
前記第1上部パッド電極は、前記第1下部パッド電極に対して一方向にシフトされ、
前記第2上部パッド電極は、前記第2下部パッド電極に対して前記一方向にシフトされている、
表示装置。 - 前記パッド部と前記回路素子との間に介在される異方性導電フィルムをさらに含み、
前記上部パッド電極は、
前記凹部で、前記異方性導電フィルムを介して前記バンプと接続される、請求項10に記載の表示装置。 - 前記異方性導電フィルムは、
接着樹脂と前記接着樹脂に分散されて配置された複数の導電ボールを含み、
前記導電ボールは、
前記凹部に収容される、請求項11に記載の表示装置。 - 前記凹部の形状は、
平坦面及び前記平坦面の両側辺から延長される2傾斜面によって定義され、
前記上部パッド電極は、
前記2傾斜面の内、いずれか1つを覆って、
前記平坦面の少なくとも一部を覆う、請求項10に記載の表示装置。 - 前記信号ラインは、
第3絶縁層を挟んで前記下部パッド電極の下に配置されて、前記第3絶縁層を貫通する第3コンタクトホールを介して前記下部パッド電極と接続され、
前記表示領域のゲートラインと電気的に接続される、請求項10に記載の表示装置。 - 前記信号ラインは、
前記下部パッド電極と同じ層に配置されて、前記下部パッド電極と接続され、
前記表示領域のデータラインと接続される、請求項10に記載の表示装置。 - 前記表示領域は、複数のサブピクセルを含み、
前記サブピクセルは、
前記基板上に位置する半導体層と、
ゲート絶縁膜を挟んで前記半導体層上に位置し、前記半導体層と一部の重畳されたゲート電極と、
前記ゲート電極を覆う層間絶縁膜上において、前記層間絶縁膜を貫通するソースコンタクトホールとドレインコンタクトホールを介して前記半導体層の一側と他側にそれぞれ接続されるソース電極及びドレイン電極と、
前記層間絶縁膜上に位置する第1ストレージキャパシタ電極と、
前記ソース電極及び前記ドレイン電極を覆う保護層上で、前記第1ストレージキャパシタ電極と重畳され、前記保護層を貫通する補助コンタクトホールを介して前記ドレイン電極と接続される第2ストレージキャパシタ電極と、
前記第1ストレージキャパシタ電極を覆うオーバーコート層上で、前記オーバーコート層を貫通するビアホールを介して前記ドレイン電極に接続された第1電極を含み、
前記上部パッド電極は、
前記第2ストレージキャパシタ電極と同じ層に配置され、同一の物質を含む、請求項10に記載の表示装置。 - 露出された前記上部パッド電極を覆う補助パッド電極をさらに含み、
前記補助パッド電極は、
前記第1電極と同一層に配置され、同一の物質を含む、請求項16に記載の表示装置。 - 前記第1及び第2ストレージキャパシタ電極は、透明導電性物質を含む、請求項16に記載の表示装置。
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