JP6452778B2 - Euvマスク検査システムの光学系の波面収差計測 - Google Patents
Euvマスク検査システムの光学系の波面収差計測 Download PDFInfo
- Publication number
- JP6452778B2 JP6452778B2 JP2017190260A JP2017190260A JP6452778B2 JP 6452778 B2 JP6452778 B2 JP 6452778B2 JP 2017190260 A JP2017190260 A JP 2017190260A JP 2017190260 A JP2017190260 A JP 2017190260A JP 6452778 B2 JP6452778 B2 JP 6452778B2
- Authority
- JP
- Japan
- Prior art keywords
- inspection system
- euv
- layer
- stack
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007689 inspection Methods 0.000 title claims description 77
- 230000004075 alteration Effects 0.000 title claims description 32
- 230000003287 optical effect Effects 0.000 title description 12
- 238000005259 measurement Methods 0.000 title description 11
- 238000012360 testing method Methods 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 32
- 210000001747 pupil Anatomy 0.000 claims description 31
- 238000005286 illumination Methods 0.000 claims description 17
- 238000002310 reflectometry Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 238000003384 imaging method Methods 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 39
- 238000013461 design Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 22
- 239000006096 absorbing agent Substances 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 11
- 239000011651 chromium Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 238000002405 diagnostic procedure Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- SGTNSNPWRIOYBX-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-{[2-(3,4-dimethoxyphenyl)ethyl](methyl)amino}-2-(propan-2-yl)pentanenitrile Chemical compound C1=C(OC)C(OC)=CC=C1CCN(C)CCCC(C#N)(C(C)C)C1=CC=C(OC)C(OC)=C1 SGTNSNPWRIOYBX-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- -1 DLC Chemical compound 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
- G02B5/0833—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only comprising inorganic materials only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K7/00—Gamma- or X-ray microscopes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Optical Elements Other Than Lenses (AREA)
- Microscoopes, Condenser (AREA)
Description
本出願は、2012年8月30日にQiangZhangらよって出願された、「EUV光線性(Actinic)フォトマスク検査用の投影光学系のその場での波面収差計測をするためのテストマスク」と題された、米国仮特許出願番号61/694,919の優先権を主張し、全目的のためにその全体が参照により本明細書に組み込まれる。
極端紫外線(EUV)リソグラフィ工程は、13.5nmなどのEUV波長でウエハ上にパターン形成を容易にするように設計されたEUV型レチクルを一般的に使用する。図1Aは、半導体ウエハのパターンを製造するために使用され得るEUVレチクルの例の一部の側面を図示したものである。図示のように、EUVレチクル100は基板102、体熱膨張(LTE)または超低膨張(ULE)ガラス板などを含む。
図2は、本発明の技術が実装され得るEUV光線性検査ツール200を図示したものである。検査ツール200は通常、EUV入射ビームをテスト構造上に方向づけるための一つ以上の照明要素201と、本明細書にさらに記載のように、テスト構造からの出力ビームを検出し出力ビームに基づいて画像または信号を生成するための一つ以上の結像要素209を含み得る。出力ビームは、テスト構造上の入射ビームに反応してテスト構造から発する。
検査システムの光学部品は、最初にEUVレチクルの検査用に設定され得るが、光学部品は振動や熱の影響のために継時的にドリフトし得る。この「波面」収差が、検査下にあるEUVレチクルの結像を危うくするだろう。従って、検査のための検査ツールの光学系とEUVレチクルは光学的波面収差のドリフトを最小にするための再位置調整を必要とし得る。
Claims (11)
- EUV光への反射性を実質的に有しない素材から形成される基板および前記基板上に形成され、EUV光を反射するように異なる屈折率を有する層の複数の交互の対を備える多層膜(ML)スタック部の前記対の数は15以下であり、前記MLスタック部は100nm未満の直径を有する柱であり、テスト構造上へEUV入射ビームを方向づけるための一つ以上の照射要素と、
前記テスト構造からの出力ビームを検出し前記出力ビームに基づいて画像または信号を生成するための、前記出力ビームは前記テスト構造上の前記入射ビームに反応して前記テスト構造から発する、一つ以上の画像形成要素と、
実質的に検査システムの瞳を横切る波面収差を測定するために前記画像または信号を分析するように構成されるプロセッサを備える、検査システム。 - 0.1より大きい開口数(NA)を有する、請求項1に記載の検査システム。
- 各対が、(i)モリブデン(Mo)層およびシリコン(Si)層、(ii)Ru層およびSi層、または(iii)炭素(C)系バリア層と適合するMo層およびSi層を備える、請求項1に記載の検査システム。
- 前記MLスタック部の層の前記交互の対が、非周期的であり、各交互の対が、前記テスト構造から回折されたEUV光が前記検査システムの入射瞳領域を実質的に充填するように最適化された厚さを有し、および/または最適化されたピーク反射率を有する、請求項1に記載の検査システム。
- 前記対の前記数が、10以下である、請求項1に記載の検査システム。
- 前記対の前記数が、5以下である、請求項1に記載の検査システム。
- 前記MLスタック部の周期が、約7から7.5nm間である、請求項1に記載の検査システム。
- 前記MLスタック部が、EUV光で画像化された時に前記MLスタック部と前記基板間で高いコントラストを提供する組成物を有する、請求項1に記載の検査システム。
- 前記MLスタック部が、75nm以下の厚さを有する、請求項1に記載の検査システム。
- 前記基板が、0.1%未満のEUV光の反射率を結果生じる屈折率を有する、請求項1に記載の検査システム。
- 前記テスト構造が、前記MLスタック部の上部および側面上にコンフォーマル層をさらに備え、前記コンフォーマル層が、酸素の拡散率が低く実質的に透明であることを特徴とし、前記コンフォーマル層が、Ru、ホウ素(B)、DLC、SiO2またはSi3N4を備えることを特徴とする、請求項1に記載の検査システム。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261694919P | 2012-08-30 | 2012-08-30 | |
US61/694,919 | 2012-08-30 | ||
US14/010,484 | 2013-08-26 | ||
US14/010,484 US9335206B2 (en) | 2012-08-30 | 2013-08-26 | Wave front aberration metrology of optics of EUV mask inspection system |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015530007A Division JP6312682B2 (ja) | 2012-08-30 | 2013-08-28 | Euvマスク検査システムの光学系の波面収差計測 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018028670A JP2018028670A (ja) | 2018-02-22 |
JP6452778B2 true JP6452778B2 (ja) | 2019-01-16 |
Family
ID=50184327
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015530007A Active JP6312682B2 (ja) | 2012-08-30 | 2013-08-28 | Euvマスク検査システムの光学系の波面収差計測 |
JP2017190260A Active JP6452778B2 (ja) | 2012-08-30 | 2017-09-29 | Euvマスク検査システムの光学系の波面収差計測 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015530007A Active JP6312682B2 (ja) | 2012-08-30 | 2013-08-28 | Euvマスク検査システムの光学系の波面収差計測 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9335206B2 (ja) |
JP (2) | JP6312682B2 (ja) |
KR (1) | KR102100001B1 (ja) |
CN (1) | CN104755909A (ja) |
DE (1) | DE112013004235T5 (ja) |
TW (1) | TWI586949B (ja) |
WO (1) | WO2014036181A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014216240A1 (de) * | 2014-08-15 | 2016-02-18 | Carl Zeiss Smt Gmbh | Reflektives optisches Element |
US9766536B2 (en) | 2015-07-17 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask with multilayer structure and manufacturing method by using the same |
JP6555002B2 (ja) * | 2015-08-19 | 2019-08-07 | 三星ダイヤモンド工業株式会社 | スクライブラインの検査方法 |
US9875534B2 (en) * | 2015-09-04 | 2018-01-23 | Kla-Tencor Corporation | Techniques and systems for model-based critical dimension measurements |
JP6527808B2 (ja) * | 2015-10-27 | 2019-06-05 | 株式会社ニューフレアテクノロジー | 検査方法および検査装置 |
KR102469807B1 (ko) * | 2015-10-28 | 2022-11-23 | 에스케이하이닉스 주식회사 | 반사형 포토마스크의 제조방법 |
CN105445822A (zh) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | 一种具有光谱纯化功能的角宽带极紫外多层膜 |
US9791771B2 (en) * | 2016-02-11 | 2017-10-17 | Globalfoundries Inc. | Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure |
DE102016203442A1 (de) | 2016-03-02 | 2017-09-07 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives |
US10276662B2 (en) | 2016-05-31 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming contact trench |
CN106094084A (zh) * | 2016-06-02 | 2016-11-09 | 中国科学院微电子研究所 | 极紫外多层膜反射式单级衍射光栅 |
CN109196420B (zh) | 2016-06-03 | 2022-11-15 | Asml荷兰有限公司 | 图案形成装置 |
TWI763686B (zh) * | 2016-07-27 | 2022-05-11 | 美商應用材料股份有限公司 | 具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統 |
CN106169416B (zh) * | 2016-08-29 | 2019-11-12 | 复旦大学 | 一种极紫外掩模的制造方法 |
US10634623B2 (en) * | 2016-10-07 | 2020-04-28 | Kla-Tencor Corporation | Phase contrast monitoring for extreme ultra-violet (EUV) masks defect inspection |
CN106324740B (zh) * | 2016-11-16 | 2018-12-18 | 天津津航技术物理研究所 | 一种宽带吸收薄膜及其制备方法 |
CN106768886B (zh) * | 2016-12-16 | 2019-03-08 | 中国科学院光电研究院 | 一种深紫外光学***波像差检测装置和方法 |
JP6685959B2 (ja) * | 2017-03-22 | 2020-04-22 | キオクシア株式会社 | 反射型露光マスク |
US10761031B1 (en) | 2018-03-20 | 2020-09-01 | Kla-Tencor Corporation | Arbitrary wavefront compensator for deep ultraviolet (DUV) optical imaging system |
WO2019202784A1 (ja) | 2018-04-17 | 2019-10-24 | 本田技研工業株式会社 | 鞍乗型電動車両 |
US10777970B2 (en) * | 2018-09-04 | 2020-09-15 | Samsung Electronics Co., Ltd. | Metamaterial-based reflector, optical cavity structure including the same and vertical cavity surface emitting laser |
US20200379336A1 (en) | 2019-06-03 | 2020-12-03 | Kla Corporation | Wave-Front Aberration Metrology of Extreme Ultraviolet Mask Inspection Systems |
WO2024091683A1 (en) * | 2022-10-28 | 2024-05-02 | Applied Materials, Inc. | Optical coating for eliminating ghost images in optical metrology tools |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2614861B2 (ja) * | 1987-06-26 | 1997-05-28 | 日本電信電話株式会社 | 反射型x線マスク |
JP2979667B2 (ja) * | 1991-01-23 | 1999-11-15 | 株式会社ニコン | 反射型のx線露光用マスク |
US20020014403A1 (en) | 2000-04-07 | 2002-02-07 | Eiichi Hoshino | Method of fabricating reflective mask, and methods and apparatus of detecting wet etching end point and inspecting side etching amount |
TW519574B (en) * | 2000-10-20 | 2003-02-01 | Nikon Corp | Multilayer mirror and method for making the same, and EUV optical system comprising the same, and EUV microlithography system comprising the same |
JP3998627B2 (ja) * | 2002-09-30 | 2007-10-31 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置と測定系 |
US7026076B2 (en) | 2003-03-03 | 2006-04-11 | Freescale Semiconductor, Inc. | Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC |
TWI329208B (en) | 2003-06-03 | 2010-08-21 | Oerlikon Trading Ag | Optical substrate for enhanced detectability of fluorescence |
JP2007234685A (ja) * | 2006-02-28 | 2007-09-13 | Canon Inc | 測定装置、当該測定装置を有する露光装置及びデバイス製造方法 |
JP5292747B2 (ja) * | 2007-09-14 | 2013-09-18 | 凸版印刷株式会社 | 極端紫外線用反射型フォトマスク |
JP2009141177A (ja) * | 2007-12-07 | 2009-06-25 | Canon Inc | Euv用ミラー及びそれを有するeuv露光装置 |
NL1036305A1 (nl) * | 2007-12-21 | 2009-06-23 | Asml Netherlands Bv | Grating for EUV-radiation, method for manufacturing the grating and wavefront measurement system. |
NL1036313A1 (nl) * | 2007-12-27 | 2009-06-30 | Asml Netherlands Bv | Device manufacturing method and lithographic apparatus. |
DE102008042212A1 (de) * | 2008-09-19 | 2010-04-01 | Carl Zeiss Smt Ag | Reflektives optisches Element und Verfahren zu seiner Herstellung |
JP5239762B2 (ja) * | 2008-11-13 | 2013-07-17 | 大日本印刷株式会社 | 反射型マスク、および、反射型マスク製造方法 |
JP2010206033A (ja) * | 2009-03-04 | 2010-09-16 | Nikon Corp | 波面収差計測装置、該装置の校正方法、及び露光装置 |
US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
US20100301437A1 (en) | 2009-06-01 | 2010-12-02 | Kla-Tencor Corporation | Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems |
JP5381441B2 (ja) * | 2009-07-16 | 2014-01-08 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランクの製造方法 |
JP5532834B2 (ja) * | 2009-11-10 | 2014-06-25 | 凸版印刷株式会社 | 反射型投影露光マスクブランク、及び反射型投影露光マスク |
JP5533016B2 (ja) * | 2010-02-24 | 2014-06-25 | 大日本印刷株式会社 | 反射型マスクの製造方法 |
KR101727783B1 (ko) * | 2010-06-15 | 2017-04-17 | 칼 짜이스 에스엠테 게엠베하 | Euv 리소그래피를 위한 마스크, euv 리소그래피 시스템 그리고 마스크의 결상을 최적화하는 방법 |
DE102010030261A1 (de) * | 2010-06-18 | 2011-12-22 | Carl Zeiss Smt Gmbh | Vorrichtung sowie Verfahren zum ortsaufgelösten Vermessen einer von einer Lithographie-Maske erzeugten Strahlungsverteilung |
US8555214B2 (en) | 2010-09-14 | 2013-10-08 | Luminescent Technologies, Inc. | Technique for analyzing a reflective photo-mask |
-
2013
- 2013-08-26 US US14/010,484 patent/US9335206B2/en active Active
- 2013-08-28 WO PCT/US2013/057147 patent/WO2014036181A1/en active Application Filing
- 2013-08-28 DE DE112013004235.5T patent/DE112013004235T5/de active Pending
- 2013-08-28 CN CN201380052647.2A patent/CN104755909A/zh active Pending
- 2013-08-28 JP JP2015530007A patent/JP6312682B2/ja active Active
- 2013-08-28 KR KR1020157007972A patent/KR102100001B1/ko active IP Right Grant
- 2013-08-30 TW TW102131412A patent/TWI586949B/zh active
-
2017
- 2017-09-29 JP JP2017190260A patent/JP6452778B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR20150048226A (ko) | 2015-05-06 |
WO2014036181A1 (en) | 2014-03-06 |
JP2015529855A (ja) | 2015-10-08 |
CN104755909A (zh) | 2015-07-01 |
DE112013004235T5 (de) | 2015-06-03 |
TW201414996A (zh) | 2014-04-16 |
US20140063490A1 (en) | 2014-03-06 |
TWI586949B (zh) | 2017-06-11 |
KR102100001B1 (ko) | 2020-04-10 |
JP6312682B2 (ja) | 2018-04-18 |
JP2018028670A (ja) | 2018-02-22 |
US9335206B2 (en) | 2016-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6452778B2 (ja) | Euvマスク検査システムの光学系の波面収差計測 | |
JP3972035B2 (ja) | 検査方法とデバイス製造方法 | |
US9863761B2 (en) | Critical dimension uniformity monitoring for extreme ultraviolet reticles | |
JP7427772B2 (ja) | 波長分解軟x線反射率測定に基づく半導体計測のための方法及びシステム | |
US10634623B2 (en) | Phase contrast monitoring for extreme ultra-violet (EUV) masks defect inspection | |
KR102326190B1 (ko) | 정정 유도 방법 및 장치, 구조체의 속성을 결정하는 방법 및 장치, 디바이스 제조 방법 | |
JP2009200466A (ja) | 検査方法及び装置、リソグラフィ装置、リソグラフィ処理セル、並びに、デバイス製造方法 | |
CN114902139A (zh) | 用于校正集成电路和关联设备的制造中的测量值的方法 | |
US10782616B2 (en) | Automatic selection of metrology target measurement recipes | |
KR20220163446A (ko) | 필터링이 개선된 소프트 x-선 광학계 | |
JP2008192936A (ja) | 測定装置、露光装置及びデバイス製造方法 | |
US9400424B2 (en) | Method of repairing a mask | |
US20070242256A1 (en) | Lithographic apparatus, lens interferometer and device manufacturing method | |
CN109581821A (zh) | 极紫外光微影设备、工艺控制方法及评估焦距控制的方法 | |
JP5537426B2 (ja) | 光学系上の散乱光測定方法及び装置 | |
JP2004289119A (ja) | 迷放射を決定する方法、リソグラフィ投影装置 | |
US20210293701A1 (en) | Apparatus and method for measuring phase of extreme ultraviolet (euv) mask and method of fabricating euv mask including the method | |
CN112771449B (zh) | 测量光瞳形状的方法和设备 | |
TW202113497A (zh) | 度量衡器件及其偵測設備 | |
Pawloski et al. | Comparative study of mask architectures for EUV lithography | |
JP2021531502A (ja) | フォトリソグラフィマスクの基板に導入される1つまたは複数のピクセルの効果を決定するための方法および装置 | |
WO2022253526A1 (en) | Metrology measurement method and apparatus | |
Jeong et al. | Actinic detection of EUVL mask blank defects |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180828 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181119 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181204 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181211 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6452778 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |