JP6421748B2 - 弾性波装置 - Google Patents
弾性波装置 Download PDFInfo
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- JP6421748B2 JP6421748B2 JP2015254157A JP2015254157A JP6421748B2 JP 6421748 B2 JP6421748 B2 JP 6421748B2 JP 2015254157 A JP2015254157 A JP 2015254157A JP 2015254157 A JP2015254157 A JP 2015254157A JP 6421748 B2 JP6421748 B2 JP 6421748B2
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- elastic wave
- bus bar
- electrode layer
- acoustic wave
- wave device
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- 239000000758 substrate Substances 0.000 claims description 15
- 230000003014 reinforcing effect Effects 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000007547 defect Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6436—Coupled resonator filters having one acoustic track only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
Description
2…圧電基板
3a,3b…第1,第2の帯域通過型フィルタ
4…入力端子
5…アンテナ端子
6…出力端子
7a,7b…第1,第2の縦結合共振子型弾性波フィルタ
8…グラウンド端子
9a〜9d…第1〜第4のバスバー
9a1〜9d1…第1の電極層
9a2〜9d2…第2の電極層
9B,9C…分断部
10A,10Ba〜10Bc,10Ca〜10Cc…IDT電極
11A〜11C…反射器
12…第1の配線層
13…レジストパターン
13a…幅狭部
13b,13c…補強部
21…デュプレクサ
23a,23b…第1,第2の帯域通過型フィルタ
29a〜29d…第1〜第4のバスバー
29B,29C…分断部
S1〜S4…直列腕共振子
S11…弾性波共振子
P1〜P3…並列腕共振子
P11…弾性波共振子
Claims (8)
- 圧電基板と、
前記圧電基板に構成されており、IDT電極をそれぞれ有する複数の弾性波素子と、
を備え、
前記複数の弾性波素子のうち第1の弾性波素子の前記IDT電極が、複数本の電極指と、対向し合っている第1,第2のバスバーを有し、第2の弾性波素子の前記IDT電極が、複数本の電極指と、対向し合っている第3,第4のバスバーを有し、
前記第2のバスバーと前記第3のバスバーとが略平行に延びており、かつ弾性波伝搬方向に垂直な方向においてギャップを介して配置されており、
前記第2,第3のバスバーが第1の電極層と、該第1の電極層上に少なくともその一部が積層されている第2の電極層と、を有し、前記第1の電極層が、前記第1または前記第2の弾性波素子の前記電極指と一体に設けられており、
前記第2のバスバーの前記第2の電極層が、少なくとも1箇所において、弾性波伝搬方向に交差する方向に分断されている、弾性波装置。 - 前記第2のバスバーの前記第2の電極層が、弾性波伝搬方向に垂直な方向に分断されている、請求項1に記載の弾性波装置。
- 前記第3のバスバーの前記第2の電極層が、少なくとも1箇所において、弾性波伝搬方向に交差する方向に分断されている、請求項1または2に記載の弾性波装置。
- 前記第3のバスバーの前記第2の電極層が、弾性波伝搬方向に垂直な方向に分断されている、請求項3に記載の弾性波装置。
- 前記第2のバスバーの前記第2の電極層が分断されている部分からの、前記第2のバスバーの前記第2の電極層が分断されている方向の延長線上において、前記第3のバスバーの前記第2の電極層が分断されている、請求項3または4のいずれか1項に記載の弾性波装置。
- 前記複数の弾性波素子が直列腕共振子及び複数の並列腕共振子を含み、前記第1,第2の弾性波素子のうち一方が前記直列腕共振子であり、他方が前記並列腕共振子である、請求項1〜5のいずれか1項に記載の弾性波装置。
- 第1の帯域通過型フィルタと、前記第1の帯域通過型フィルタとは通過帯域が異なる第2の帯域通過型フィルタと、を有し、
前記第1の帯域通過型フィルタが前記第1,第2の弾性波素子のうち少なくとも一方を含む、請求項1〜6のいずれか1項に記載の弾性波装置。 - 前記第1の帯域通過型フィルタが前記第1,第2の弾性波素子のうち一方を含み、前記第2の帯域通過型フィルタが前記第1,第2の弾性波素子のうち他方を含む、請求項7に記載の弾性波装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015254157A JP6421748B2 (ja) | 2015-12-25 | 2015-12-25 | 弾性波装置 |
CN202110833827.0A CN113541629A (zh) | 2015-12-25 | 2016-12-01 | 弹性波装置 |
CN201611095317.3A CN107026633B (zh) | 2015-12-25 | 2016-12-01 | 弹性波装置 |
US15/375,221 US10418966B2 (en) | 2015-12-25 | 2016-12-12 | Elastic wave device having a cut in a busbar electrode layer |
KR1020160169691A KR101886531B1 (ko) | 2015-12-25 | 2016-12-13 | 탄성파 장치 |
DE102016125160.7A DE102016125160B4 (de) | 2015-12-25 | 2016-12-21 | Vorrichtung für elastische Wellen |
US16/533,843 US10972070B2 (en) | 2015-12-25 | 2019-08-07 | Elastic wave device |
US17/186,053 US11936366B2 (en) | 2015-12-25 | 2021-02-26 | Elastic wave device |
Applications Claiming Priority (1)
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JP2015254157A JP6421748B2 (ja) | 2015-12-25 | 2015-12-25 | 弾性波装置 |
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JP2017118425A JP2017118425A (ja) | 2017-06-29 |
JP6421748B2 true JP6421748B2 (ja) | 2018-11-14 |
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US (3) | US10418966B2 (ja) |
JP (1) | JP6421748B2 (ja) |
KR (1) | KR101886531B1 (ja) |
CN (2) | CN113541629A (ja) |
DE (1) | DE102016125160B4 (ja) |
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JP6421748B2 (ja) * | 2015-12-25 | 2018-11-14 | 株式会社村田製作所 | 弾性波装置 |
CN115603701B (zh) * | 2022-12-16 | 2023-04-14 | 常州承芯半导体有限公司 | 声表面波滤波器及声表面波滤波器的形成方法 |
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JP2004260691A (ja) * | 2003-02-27 | 2004-09-16 | Fujitsu Ltd | 弾性表面波装置 |
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2015
- 2015-12-25 JP JP2015254157A patent/JP6421748B2/ja active Active
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2016
- 2016-12-01 CN CN202110833827.0A patent/CN113541629A/zh active Pending
- 2016-12-01 CN CN201611095317.3A patent/CN107026633B/zh active Active
- 2016-12-12 US US15/375,221 patent/US10418966B2/en active Active
- 2016-12-13 KR KR1020160169691A patent/KR101886531B1/ko active IP Right Grant
- 2016-12-21 DE DE102016125160.7A patent/DE102016125160B4/de active Active
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2019
- 2019-08-07 US US16/533,843 patent/US10972070B2/en active Active
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- 2021-02-26 US US17/186,053 patent/US11936366B2/en active Active
Also Published As
Publication number | Publication date |
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US20170187350A1 (en) | 2017-06-29 |
US11936366B2 (en) | 2024-03-19 |
US20210184648A1 (en) | 2021-06-17 |
JP2017118425A (ja) | 2017-06-29 |
CN113541629A (zh) | 2021-10-22 |
KR20170077035A (ko) | 2017-07-05 |
DE102016125160B4 (de) | 2021-11-25 |
KR101886531B1 (ko) | 2018-08-07 |
US10972070B2 (en) | 2021-04-06 |
CN107026633A (zh) | 2017-08-08 |
US20190363693A1 (en) | 2019-11-28 |
CN107026633B (zh) | 2021-08-10 |
DE102016125160A1 (de) | 2017-06-29 |
US10418966B2 (en) | 2019-09-17 |
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