JP6403100B2 - エピタキシャル成長装置及び保持部材 - Google Patents
エピタキシャル成長装置及び保持部材 Download PDFInfo
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- JP6403100B2 JP6403100B2 JP2016011472A JP2016011472A JP6403100B2 JP 6403100 B2 JP6403100 B2 JP 6403100B2 JP 2016011472 A JP2016011472 A JP 2016011472A JP 2016011472 A JP2016011472 A JP 2016011472A JP 6403100 B2 JP6403100 B2 JP 6403100B2
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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Description
表裏を貫通する貫通孔を有して軸線回りに回転可能なサセプタと、
貫通孔に挿入されるリフトピンと、
軸線回りに位置するリング部と、リング部に接続する接続部を含み接続部からリング部に沿って延びて接続部を基点にリング部に向けて付勢する弾性部材とを有する保持部材と、
を備え、
保持部材は、リング部と弾性部材の間にリフトピンを挟んで保持することを特徴とする。
表裏を貫通する貫通孔を有して軸線回りに回転可能なサセプタの貫通孔に挿入されるリフトピンを保持する保持部材であって、
軸線回りに位置するリング部と、
リング部に接続する接続部を含み接続部からリング部に沿って延びて接続部を基点にリング部に向けて付勢する弾性部材と、
を備え、
リング部と弾性部材の間にリフトピンを挟んで保持することを特徴とする。
直径300mmのシリコン単結晶基板である基板Wと気相成長装置1を用意し、用意した基板Wと気相成長装置1を用いて気相成長装置1のサセプタ3のポケット部3aに基板Wを載置し、載置した基板Wにエピタキシャル層を成長してエピタキシャルウェーハを製造した。そして、製造されたエピタキシャルウェーハのエピタキシャル層の外周部の膜厚分布に基づいて、そのエピタキシャルウェーハの基板Wの中心がポケット部3aの中心Cからずれた距離を載置ズレ量として測定した。このようにして100枚のエピタキシャルウェーハを製造し、製造したエピタキシャルウェーハから載置ズレ量を取得し、載置ズレ量の平均値及び標準偏差を算出した。なお、載置ズレ量の具体的な測定方法としては、特開2014−127595号公報に開示される方法を使用した。
比較例では、次に示す構成以外は気相成長装置1と同様の気相成長装置101(図6と図7参照)を用いてエピタキシャルウェーハを製造した。以下、気相成長装置101の説明をするが、気相成長装置1と同じ構成は同じ符号を付して説明を省略し、特有の構成のみを説明する。気相成長装置101は、気相成長装置1からサポートリング6を取り外し、サポートシャフト4の代わりにサポートシャフト104を取り付けたものである。サポートシャフト104は、サポートシャフト4の貫通孔Hの形状を長穴から長穴より小さい円筒状の貫通孔H1に代えたものであり、貫通孔3b、H1に挿入されたリフトピン5は、貫通孔3b、H1によりリフトピン5の傾きが定められる。このような気相成長装置101を使用する以外は、実施例と同様の条件にして100枚のエピタキシャルウェーハを製造し、載置ズレ量の平均値及び標準偏差を算出した。
3 サセプタ 3b 貫通孔(第1貫通孔)
4 サポートシャフト(支持部) 4a 支柱部
4b アーム部 H 貫通孔(第2貫通孔)
5 リフトピン 6 サポートリング(保持部材)
6a リング部 6b 板状部材(弾性部材)
7 リフトピン支持部 W 基板
O 軸線
Claims (11)
- 表裏を貫通する貫通孔を有して軸線回りに回転可能なサセプタと、
前記貫通孔に挿入されるリフトピンと、
前記軸線回りに位置するリング部と、前記リング部に接続する接続部を含み前記接続部から前記リング部に沿って延びて前記接続部を基点に前記リング部に向けて付勢する弾性部材とを有する保持部材と、
前記保持部材は、前記リング部と前記弾性部材の間に前記リフトピンを挟んで保持することを特徴とするエピタキシャル成長装置。 - 前記貫通孔は、前記軸線回りに複数形成され、
複数の前記貫通孔には、前記リフトピンがそれぞれ挿入される請求項1に記載のエピタキシャル成長装置。 - 前記貫通孔は、第1貫通孔であり、
前記サセプタに接続して前記第1貫通孔の下を横切るアーム部を有して前記サセプタを支持する支持部を備え、
前記アーム部は、前記第1貫通孔に挿入される前記リフトピンが貫通する第2貫通孔を有し、
前記第2貫通孔は、前記サセプタの半径方向に延びる長穴である請求項1又は2に記載のエピタキシャル成長装置。 - 前記アーム部は、前記サセプタの下方に位置する一端部と、前記サセプタに接続する他端部を有し、
前記支持部は、前記軸線方向に延びて上端部が前記一端部に接続する支柱部を備え、
前記保持部材は、前記支柱部回りに位置する請求項3に記載のエピタキシャル成長装置。 - 前記リフトピンは、前記第1貫通孔に引っ掛かることが可能な上部を有し、
前記リフトピンは、前記上部が前記第1貫通孔に引っ掛かることにより前記サセプタに保持される請求項3又は4に記載のエピタキシャル成長装置。 - 前記上部は、前記第1貫通孔を塞ぐように前記サセプタに引っ掛かることが可能であり、
前記リフトピンは、前記上部が前記第1貫通孔に引っ掛かることにより前記第1貫通孔を塞いだ状態で前記サセプタに保持される請求項5に記載のエピタキシャル成長装置。 - 前記サセプタは、黒鉛製又は炭化珪素製若しくは炭化珪素でコーティングされた黒鉛製であり、
前記保持部材は、炭化珪素製である請求項1ないし6のいずれか1項に記載のエピタキシャル成長装置。 - 前記弾性部材は、前記接続部を含む板状部材である請求項1ないし7のいずれか1項に記載のエピタキシャル成長装置。
- 前記リング部は、円状又は略円状に形成される請求項1ないし8のいずれか1項に記載のエピタキシャル成長装置。
- 前記保持部材は、前記リング部と前記弾性部材の間に前記リフトピンの下端部を挟んで前記リフトピンを保持する請求項1ないし9のいずれか1項に記載のエピタキシャル成長装置。
- 表裏を貫通する貫通孔を有して軸線回りに回転可能なサセプタの前記貫通孔に挿入されるリフトピンを保持する保持部材であって、
前記軸線回りに位置するリング部と、
前記リング部に接続する接続部を含み前記接続部から前記リング部に沿って延びて前記接続部を基点に前記リング部に向けて付勢する弾性部材と、
を備え、
前記リング部と前記弾性部材の間に前記リフトピンを挟んで保持することを特徴とする保持部材。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016011472A JP6403100B2 (ja) | 2016-01-25 | 2016-01-25 | エピタキシャル成長装置及び保持部材 |
CN201780005034.1A CN108604539B (zh) | 2016-01-25 | 2017-01-18 | 外延生长装置和保持部件 |
PCT/JP2017/001501 WO2017130809A1 (ja) | 2016-01-25 | 2017-01-18 | エピタキシャル成長装置及び保持部材 |
KR1020187015504A KR102402754B1 (ko) | 2016-01-25 | 2017-01-18 | 에피택셜 성장 장치 및 유지 부재 |
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JP2016011472A JP6403100B2 (ja) | 2016-01-25 | 2016-01-25 | エピタキシャル成長装置及び保持部材 |
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JP2017135147A JP2017135147A (ja) | 2017-08-03 |
JP6403100B2 true JP6403100B2 (ja) | 2018-10-10 |
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JP (1) | JP6403100B2 (ja) |
KR (1) | KR102402754B1 (ja) |
CN (1) | CN108604539B (ja) |
WO (1) | WO2017130809A1 (ja) |
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JP6536463B2 (ja) * | 2016-04-21 | 2019-07-03 | 株式会社Sumco | エピタキシャル成長装置 |
US10770336B2 (en) * | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11018047B2 (en) * | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
JP7135841B2 (ja) | 2018-12-25 | 2022-09-13 | 株式会社Sumco | ウェーハ移載装置、気相成長装置、ウェーハ移載方法およびエピタキシャルシリコンウェーハの製造方法 |
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JP2001313329A (ja) * | 2000-04-28 | 2001-11-09 | Applied Materials Inc | 半導体製造装置におけるウェハ支持装置 |
US7204888B2 (en) * | 2003-05-01 | 2007-04-17 | Applied Materials, Inc. | Lift pin assembly for substrate processing |
US20060156987A1 (en) * | 2005-01-18 | 2006-07-20 | Chien-Hsing Lai | Lift pin mechanism and substrate carrying device of a process chamber |
KR100648402B1 (ko) * | 2005-06-16 | 2006-11-24 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 |
JP4687534B2 (ja) * | 2005-09-30 | 2011-05-25 | 東京エレクトロン株式会社 | 基板の載置機構及び基板処理装置 |
JP2009135258A (ja) * | 2007-11-30 | 2009-06-18 | Sumco Corp | サセプターサポートシャフト及びエピタキシャル成長装置 |
KR101227743B1 (ko) * | 2008-09-16 | 2013-01-29 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 배치대 |
JP5484981B2 (ja) | 2010-03-25 | 2014-05-07 | 東京エレクトロン株式会社 | 基板載置台及び基板処理装置 |
JP5704461B2 (ja) * | 2012-02-24 | 2015-04-22 | 信越半導体株式会社 | 枚葉式エピタキシャルウェーハ製造装置およびそれを用いたエピタキシャルウェーハの製造方法 |
KR20130107964A (ko) * | 2012-03-23 | 2013-10-02 | 에이에스엠 아이피 홀딩 비.브이. | 증착 장치 |
JP5386046B1 (ja) * | 2013-03-27 | 2014-01-15 | エピクルー株式会社 | サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置 |
JP6112474B2 (ja) * | 2013-05-09 | 2017-04-12 | 信越半導体株式会社 | ウェーハ昇降装置、エピタキシャルウェーハの製造方法 |
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