JP6362378B2 - 窒化アルミニウム結晶の製造方法 - Google Patents
窒化アルミニウム結晶の製造方法 Download PDFInfo
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- JP6362378B2 JP6362378B2 JP2014069921A JP2014069921A JP6362378B2 JP 6362378 B2 JP6362378 B2 JP 6362378B2 JP 2014069921 A JP2014069921 A JP 2014069921A JP 2014069921 A JP2014069921 A JP 2014069921A JP 6362378 B2 JP6362378 B2 JP 6362378B2
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- aluminum nitride
- nitrogen
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- crystal
- nitride crystal
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- 239000013078 crystal Substances 0.000 title claims description 112
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 110
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000007789 gas Substances 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 70
- 239000007788 liquid Substances 0.000 claims description 42
- 150000001875 compounds Chemical class 0.000 claims description 41
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 21
- 239000007791 liquid phase Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 25
- 150000004767 nitrides Chemical class 0.000 description 19
- 229910052594 sapphire Inorganic materials 0.000 description 19
- 239000010980 sapphire Substances 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 239000010408 film Substances 0.000 description 15
- 230000004907 flux Effects 0.000 description 13
- 239000010409 thin film Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 4
- 238000004719 convergent beam electron diffraction Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Description
実施例1では、先ず、c面サファイア基板を窒素分圧0.9atm/一酸化炭素分圧0.1atm、温度1500℃で1時間保持した後、窒素分圧1.0atmで5時間保持し、窒化サファイア基板を得た。
実施例2では、露点温度が−52℃の窒素ガスをフラックス中に吹き込んだ以外は実施例1と同様にして、窒化アルミニウム基板上に窒化アルミニウム結晶を生成させた。
比較例1では、露点温度が−40℃の窒素ガスをフラックス中に吹き込んだ以外は実施例1と同様にして、窒化アルミニウム基板上に窒化アルミニウム結晶を生成させた。
比較例2では、露点温度が−45℃の窒素ガスをフラックス中に吹き込んだ以外は実施例1と同様にして、窒化アルミニウム基板上に窒化アルミニウム結晶を生成させた。
ガス排出管、18 熱電対
Claims (1)
- Ga−Al合金融液に窒素含有ガスを導入し、該Ga−Al合金融液中の種結晶基板上に窒化アルミニウム結晶をエピタキシャル成長させる液相成長法による窒化アルミニウム結晶の製造方法において、
露点温度が−50℃以下の前記窒素含有ガスを、可撓性を有する金属製のガス供給管を用いて保持プレート上面に取り付けられたシード基板にバブリングし、前記Ga−Al合金融液中に導入することを特徴とする窒化アルミニウム結晶の製造方法。
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JP2015189651A JP2015189651A (ja) | 2015-11-02 |
JP6362378B2 true JP6362378B2 (ja) | 2018-07-25 |
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CN105420814B (zh) * | 2015-11-26 | 2017-10-27 | 北京大学东莞光电研究院 | 一种晶体生长反应釜 |
CN107687023B (zh) * | 2017-08-21 | 2020-10-30 | 奥趋光电技术(杭州)有限公司 | 氮化铝单晶生长中籽晶或衬底的固定装置及固定方法 |
CN114093753B (zh) * | 2021-11-12 | 2022-10-25 | 松山湖材料实验室 | 氮化铝单晶衬底的表面处理方法及紫外发光二极管的制备方法 |
CN114164493A (zh) * | 2021-12-08 | 2022-03-11 | 北京世纪金光半导体有限公司 | 一种液相生长氮化铝的生长结构及生长方法 |
JP7448925B2 (ja) * | 2022-02-24 | 2024-03-13 | 国立大学法人東北大学 | AlN単結晶の製造方法、AlN単結晶、およびAlN単結晶製造装置 |
WO2023162936A1 (ja) * | 2022-02-24 | 2023-08-31 | 国立大学法人東北大学 | AlN単結晶の製造方法、AlN単結晶、およびAlN単結晶製造装置 |
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JPH01226709A (ja) * | 1988-03-08 | 1989-09-11 | Showa Alum Corp | 高純度窒化アルミニウム紛末の製造方法 |
JP2004189549A (ja) * | 2002-12-12 | 2004-07-08 | Sumitomo Metal Mining Co Ltd | 窒化アルミニウム単結晶の製造方法 |
JP4595909B2 (ja) * | 2006-08-14 | 2010-12-08 | 住友金属工業株式会社 | 窒化アルミニウム単結晶の製造方法 |
JP5656697B2 (ja) * | 2010-07-14 | 2015-01-21 | 住友金属鉱山株式会社 | 窒化アルミニウム結晶の製造方法 |
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