JP6360191B2 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- JP6360191B2 JP6360191B2 JP2016556089A JP2016556089A JP6360191B2 JP 6360191 B2 JP6360191 B2 JP 6360191B2 JP 2016556089 A JP2016556089 A JP 2016556089A JP 2016556089 A JP2016556089 A JP 2016556089A JP 6360191 B2 JP6360191 B2 JP 6360191B2
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- 239000004065 semiconductor Substances 0.000 claims description 74
- 210000000746 body region Anatomy 0.000 claims description 46
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 108091006146 Channels Proteins 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
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- 238000009825 accumulation Methods 0.000 description 3
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- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- -1 etc. Chemical compound 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Inverter Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (9)
- 半導体装置を有する電力変換装置であって、
前記半導体装置は、
第1主面および第2主面を有する半導体基板と、
前記半導体基板内の前記第1主面側に設けられているドリフト領域と、
前記第2主面側に設けられている第1電極と、
前記ドリフト領域内に設けられているボディ領域と、
前記ドリフト領域内に前記ボディ領域と間隔を空けて設けられ、絶縁膜の側壁を有するトレンチと、
前記ドリフト領域と前記ボディ領域に、前記絶縁膜を挟んで対向する第1ゲート電極と、
前記トレンチの内部に設けられ、前記第1ゲート電極と絶縁されている第2ゲート電極と、
前記ボディ領域内に全体が含まれる半導体領域と、
前記第1ゲート電極及び前記第2ゲート電極と絶縁され、前記半導体領域の一部に接続されている第2電極と、を有し、
前記間隔が1μm未満であり、且つ前記トレンチの深さよりも短く、
前記トレンチの長手方向の端部が前記ボディ領域に接し、
前記ボディ領域の前記端部近傍の不純物濃度は、前記ボディ領域の他の部分の不純物濃度より高く、
前記第1ゲート電極が、ゲート駆動回路の出力に接続する端子と直接接続され、
前記第2ゲート電極が、前記端子と同一の端子に抵抗及びインダクタを介して接続され、
初期状態において、前記第2ゲート電極に電圧が印可され、
前記電力変換装置の動作時において、前記ゲート駆動回路からの前記第1ゲート電極及び前記第2ゲート電極への制御信号が、前記抵抗及び前記インダクタによる前記制御信号の遅延よりも速くスイッチングされることを特徴とする電力変換装置。 - 請求項1に記載の電力変換装置において、
前記ボディ領域の深さが前記トレンチの深さよりも大きいことを特徴とする電力変換装置。 - 請求項1に記載の電力変換装置において、
前記半導体装置は、
前記第2主面側に設けられており、前記ドリフト領域とは異なる導電型を有するコレクタ領域を有し、
前記コレクタ領域は前記第1電極に接続されていることを特徴とする電力変換装置。 - 請求項1に記載の電力変換装置において、
前記半導体基板は炭化ケイ素を含むことを特徴とする電力変換装置。 - 半導体装置を有する電力変換装置であって、
前記半導体装置は、
第1主面および第2主面を有する半導体基板と、
前記半導体基板内の前記第1主面側に設けられている第1導電型を有する第1半導体領域と、
前記第2主面側に設けられている第1電極と、
前記第1半導体領域内に設けられている前記第1導電型とは異なる第2導電型を有する第2半導体領域と、
前記第1半導体領域内に設けられ、絶縁膜の側壁を有するトレンチと、
前記第1半導体領域と前記第2半導体領域に、前記絶縁膜を挟んで対向する第1ゲート電極と、
前記トレンチの内部に設けられ、前記第1ゲート電極と絶縁されている第2ゲート電極と、
前記第2半導体領域内に全体が含まれ、前記第1導電型を有する第5半導体領域と、
前記第1ゲート電極及び前記第2ゲート電極と絶縁され、前記第5半導体領域の一部に接続されている第2電極と、を有し、
前記トレンチの短手方向には、前記トレンチと間隔を空けて前記第2半導体領域が存在し、
前記トレンチの長手方向の端部が前記第2導電型を有する第3半導体領域に接し、
前記第3半導体領域の前記端部近傍の不純物濃度は、前記第3半導体領域の他の部分の不純物濃度より高く、
前記第1ゲート電極が、ゲート駆動回路の出力に接続する端子と直接接続され、
前記第2ゲート電極が、前記端子と同一の端子に抵抗及びインダクタを介して接続され、
初期状態において、前記第2ゲート電極に電圧が印可され、
前記電力変換装置の動作時において、前記ゲート駆動回路からの前記第1ゲート電極及び前記第2ゲート電極への制御信号が、前記抵抗及び前記インダクタによる前記制御信号の遅延よりも速くスイッチングされることを特徴とする電力変換装置。 - 請求項5に記載の電力変換装置において、
前記第2半導体領域と前記第3半導体領域とが連続していることを特徴とする電力変換装置。 - 請求項5に記載の電力変換装置において、
前記半導体装置は、
前記第2主面側に設けられている前記第2導電型を有する第4半導体領域を有し、
前記第4半導体領域は前記第1電極に接続されていることを特徴とする電力変換装置。 - 請求項5に記載の電力変換装置において、
前記半導体基板は炭化ケイ素を含むことを特徴とする電力変換装置。 - 半導体装置を有する電力変換装置であって、
前記半導体装置は、
第1主面および第2主面を有する半導体基板と、
前記半導体基板内の前記第1主面側に設けられているドリフト領域と、
前記第2主面側に設けられている第1電極と、
前記ドリフト領域内に設けられているボディ領域と、
前記ボディ領域および前記ドリフト領域上に設けられており、トレンチを有するゲート絶縁膜と、
前記ドリフト領域と前記ボディ領域に、前記ゲート絶縁膜を挟んで対向する第1ゲート電極と、
前記トレンチの内部に設けられ、前記第1ゲート電極と絶縁されている第2ゲート電極と、
前記ボディ領域内に全体が含まれる半導体領域と、
前記第1ゲート電極及び前記第2ゲート電極と絶縁され、前記半導体領域の一部に接続されている第2電極と、を有し、
前記ボディ領域と前記トレンチの側壁とが、1μm未満の間隔で対向し、
前記ゲート絶縁膜の長手方向の端部が前記ボディ領域に接し、
前記ボディ領域の前記端部近傍の不純物濃度は、前記ボディ領域の他の部分の不純物濃度より高く、
前記第1ゲート電極が、ゲート駆動回路の出力に接続する端子と直接接続され、
前記第2ゲート電極が、前記端子と同一の端子に抵抗及びインダクタを介して接続され、
初期状態において、前記第2ゲート電極に電圧が印可され、
前記電力変換装置の動作時において、前記ゲート駆動回路からの前記第1ゲート電極及び前記第2ゲート電極への制御信号が、前記抵抗及び前記インダクタによる前記制御信号の遅延よりも速くスイッチングされることを特徴とする電力変換装置。
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PCT/JP2014/078681 WO2016067374A1 (ja) | 2014-10-29 | 2014-10-29 | 半導体装置、パワーモジュール、および電力変換装置 |
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US10763355B2 (en) | 2018-04-02 | 2020-09-01 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Power semiconductor device |
JP7476485B2 (ja) | 2019-05-17 | 2024-05-01 | 富士電機株式会社 | 窒化物半導体装置 |
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JPS63254769A (ja) * | 1987-04-13 | 1988-10-21 | Hitachi Ltd | 縦型絶縁ゲ−ト電界効果トランジスタ |
JPH05102485A (ja) * | 1991-10-03 | 1993-04-23 | Fuji Electric Co Ltd | 半導体装置 |
JPH05343691A (ja) * | 1992-06-08 | 1993-12-24 | Nippondenso Co Ltd | 縦型絶縁ゲート電界効果トランジスタ |
JP3257358B2 (ja) * | 1994-08-01 | 2002-02-18 | トヨタ自動車株式会社 | 電界効果型半導体装置 |
JP3257394B2 (ja) * | 1996-04-04 | 2002-02-18 | 株式会社日立製作所 | 電圧駆動型半導体装置 |
DE19849555A1 (de) | 1997-11-04 | 1999-06-10 | Hitachi Ltd | Halbleiter-Bauelement und flaches Halbleiter-Bauteil |
JP2003009508A (ja) | 2001-06-19 | 2003-01-10 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2006319213A (ja) | 2005-05-13 | 2006-11-24 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP5736683B2 (ja) | 2010-07-30 | 2015-06-17 | 三菱電機株式会社 | 電力用半導体素子 |
JP5674530B2 (ja) * | 2010-09-10 | 2015-02-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の制御装置 |
JP5656608B2 (ja) * | 2010-12-17 | 2015-01-21 | 三菱電機株式会社 | 半導体装置 |
CN102201440A (zh) | 2011-05-27 | 2011-09-28 | 上海宏力半导体制造有限公司 | 一种绝缘栅双极晶体管 |
DE112012002956B4 (de) | 2011-07-14 | 2017-07-06 | Abb Schweiz Ag | Bipolarer Transistor mit isoliertem Gate |
WO2014102994A1 (ja) * | 2012-12-28 | 2014-07-03 | 株式会社日立製作所 | 炭化珪素半導体装置及びその製造方法 |
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