JP6359455B2 - 半導体回路基板およびそれを用いた半導体装置並びに半導体回路基板の製造方法 - Google Patents
半導体回路基板およびそれを用いた半導体装置並びに半導体回路基板の製造方法 Download PDFInfo
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- JP6359455B2 JP6359455B2 JP2014539744A JP2014539744A JP6359455B2 JP 6359455 B2 JP6359455 B2 JP 6359455B2 JP 2014539744 A JP2014539744 A JP 2014539744A JP 2014539744 A JP2014539744 A JP 2014539744A JP 6359455 B2 JP6359455 B2 JP 6359455B2
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Description
(実施例1〜10および比較例1〜3)
絶縁性(セラミックス)基板(縦30mm×横35mm)として、アルミナ基板(厚さ0.635mm、熱伝導率15W/m・K、3点曲げ強度450MPa)、窒化アルミニウム基板(厚さ0.635mm、熱伝導率180W/m・K、3点曲げ強度400MPa)、窒化珪素基板(厚さ0.320mm、熱伝導率90W/m・K、3点曲げ強度650MPa)を用意した。
2…絶縁性基板
3…導体部(銅回路板)
4…導体部(裏導体部、裏回路板)
5…絶縁性基板と導体部との接合層
6…接合層のはみ出し領域(幅)
7…半導体素子
8…半導体素子を接合するための接合層
9…ヒートシンク
Claims (12)
- セラミックス基板から成る絶縁性基板上に金属板から成る導体部を設けた半導体回路基板において、導体部の半導体素子搭載部の表面粗さが、算術平均粗さRaで0.3μm以下であり、十点平均粗さRzjisで2.5μm以下であり、最大高さRzで2.0μm以下であり、かつ算術平均うねりWaが0.5μm以下であり、上記絶縁性基板の厚さをt1、前記導体部の厚さをt2としたとき、0.1≦t2/t1≦50であり、上記導体部が、銅、銅合金、アルミニウムおよびアルミニウム合金のいずれか1種からなることを特徴とする半導体回路基板。
- 前記導体部の側面端部の断面角度が45°以下であることを特徴とする請求項1に記載の半導体回路基板。
- 前記導体部が金属板から成る一方、前記絶縁性基板がセラミックス基板から成り、上記金属板とセラミックス基板とを接合する接合層は上記金属板からのはみ出し領域の幅が0.2mm以下であることを特徴とする請求項1ないし請求項2のいずれか1項に記載の半導体回路基板。
- 前記絶縁性基板が、アルミナ基板、窒化アルミニウム基板、窒化珪素基板および絶縁樹脂基板のいずれか1種で構成されることを特徴とする請求項1ないし請求項3のいずれか1項に記載の半導体回路基板。
- 請求項1ないし請求項4のいずれか1項に記載の半導体回路基板の導体部に半導体素子を搭載したことを特徴とする半導体装置。
- 前記半導体素子がSi素子、GaN素子およびSiC素子から選択される1種以上であることを特徴とする請求項5記載の半導体装置。
- 前記半導体素子が接合材を介して前記導体部に接合されていることを特徴とする請求項5ないし請求項6のいずれか1項に記載の半導体装置。
- 前記半導体素子が接合材を介さずに前記導体部に直接接合されていることを特徴とする請求項5ないし請求項6のいずれか1項に記載の半導体装置。
- セラミックス基板から成る絶縁性基板上に金属板から成る導体部を形成する導体部形成工程と、上記導体部の半導体素子搭載部の表面粗さを算術平均粗さRaで0.3μm以下にし、十点平均粗さRzjisで2.5μm以下にし、最大高さRzで2.0μm以下にし、かつ算術平均うねりWaを0.5μm以下にする表面加工工程と、上記絶縁性基板の厚さをt1、上記導体部の厚さをt2としたとき、0.1≦t2/t1≦50でとなるように厚さを調整する工程とを具備し、上記導体部を、銅、銅合金、アルミニウムおよびアルミニウム合金のいずれか1種の金属板から形成することを特徴とする半導体回路基板の製造方法。
- 前記表面加工工程が、研磨工程であることを特徴とする請求項9記載の半導体回路基板の製造方法。
- 前記研磨工程が、エッチング工程であることを特徴とする請求項10記載の半導体回路基板の製造方法。
- 前記研磨工程が、プレス加工であることを特徴とする請求項10記載の半導体回路基板の製造方法。
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JP2012222239 | 2012-10-04 | ||
JP2012222239 | 2012-10-04 | ||
PCT/JP2013/076645 WO2014054609A1 (ja) | 2012-10-04 | 2013-10-01 | 半導体回路基板およびそれを用いた半導体装置並びに半導体回路基板の製造方法 |
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JPWO2014054609A1 JPWO2014054609A1 (ja) | 2016-08-25 |
JP6359455B2 true JP6359455B2 (ja) | 2018-07-18 |
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US (1) | US9277639B2 (ja) |
JP (1) | JP6359455B2 (ja) |
CN (1) | CN104718615B (ja) |
WO (1) | WO2014054609A1 (ja) |
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EP2991105B1 (en) * | 2013-04-26 | 2020-09-30 | Kyocera Corporation | Composite laminate and electronic device |
JP6139329B2 (ja) * | 2013-08-16 | 2017-05-31 | 日本碍子株式会社 | セラミック回路基板及び電子デバイス |
CN106068559A (zh) * | 2014-03-07 | 2016-11-02 | 三菱电机株式会社 | 绝缘基板及半导体装置 |
ES2973071T3 (es) | 2014-03-11 | 2024-06-18 | Procter & Gamble | Cabezal para un utensilio de cuidado bucal |
EP3460838B1 (en) * | 2016-05-19 | 2021-02-24 | Mitsubishi Materials Corporation | Substrate for power modules |
ES2778085T3 (es) | 2016-06-03 | 2020-08-07 | Procter & Gamble | Cabezal para un utensilio de cuidado bucal y utensilio de cuidado bucal |
EP3251548B1 (en) | 2016-06-03 | 2024-02-14 | The Procter & Gamble Company | Filament for an oral care implement and oral care implement |
CN115172290A (zh) * | 2016-07-14 | 2022-10-11 | 株式会社东芝 | 陶瓷电路基板及半导体模块 |
WO2018021472A1 (ja) * | 2016-07-28 | 2018-02-01 | 株式会社 東芝 | 接合体、回路基板、および半導体装置 |
US10104759B2 (en) * | 2016-11-29 | 2018-10-16 | Nxp Usa, Inc. | Microelectronic modules with sinter-bonded heat dissipation structures and methods for the fabrication thereof |
WO2018155014A1 (ja) * | 2017-02-23 | 2018-08-30 | 日本碍子株式会社 | 絶縁放熱基板 |
DE112017007299T5 (de) * | 2017-03-23 | 2020-01-02 | Mitsubishi Electric Corporation | Halbleiterelement-bonding-körper, halbleitereinheit und verfahren zur herstellung eines halbleiterelement-bonding-körpers |
CN110226363B (zh) | 2017-03-30 | 2022-08-02 | 株式会社东芝 | 陶瓷铜电路基板及使用了其的半导体装置 |
US10251470B1 (en) | 2017-10-10 | 2019-04-09 | The Procter & Gamble Company | Head for an oral care implement and oral care implement |
JP6906611B2 (ja) * | 2017-06-02 | 2021-07-21 | 三菱電機株式会社 | 半導体素子接合用基板、半導体装置および電力変換装置 |
WO2019006101A1 (en) * | 2017-06-30 | 2019-01-03 | Kyocera International, Inc. | MICROELECTRONIC BUILDING CONSTRUCTION ACTIVATED BY REINFORCING AND DESIGNING CERAMIC INSULATION |
DE102017114893B4 (de) * | 2017-07-04 | 2023-11-23 | Rogers Germany Gmbh | Lötmaterial zum Aktivlöten und Verfahren zum Aktivlöten |
US11219302B2 (en) | 2017-10-10 | 2022-01-11 | The Procter & Gamble Company | Head for an oral care implement and oral care implement |
JP7025948B2 (ja) * | 2018-02-13 | 2022-02-25 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP7243201B2 (ja) * | 2019-01-16 | 2023-03-22 | 三菱マテリアル株式会社 | ヒートシンク付き絶縁回路基板の製造方法及びヒートシンク付き絶縁回路基板 |
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JP7470181B2 (ja) * | 2020-03-18 | 2024-04-17 | 株式会社東芝 | 接合体、セラミックス銅回路基板、接合体の製造方法、およびセラミックス銅回路基板の製造方法 |
DE102020112276A1 (de) * | 2020-05-06 | 2021-11-11 | Danfoss Silicon Power Gmbh | Leistungsmodul |
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JP3922166B2 (ja) * | 2002-11-20 | 2007-05-30 | 三菱マテリアル株式会社 | パワーモジュール用基板の製造方法並びにパワーモジュール用基板及びパワーモジュール |
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JP4710798B2 (ja) * | 2006-11-01 | 2011-06-29 | 三菱マテリアル株式会社 | パワーモジュール用基板及びパワーモジュール用基板の製造方法並びにパワーモジュール |
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