JP6139329B2 - セラミック回路基板及び電子デバイス - Google Patents
セラミック回路基板及び電子デバイス Download PDFInfo
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
- C04B2237/127—The active component for bonding being a refractory metal
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
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- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
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- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- Condensed Matter Physics & Semiconductors (AREA)
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Description
t2<ta<t1
であることが好ましい。
t2<ta<t1
となっている。
実施例1に係る評価サンプルのセラミック回路基板は、図1A及び図1Bに示すセラミック回路基板10と同様の構成を有する。
比較例1に係る評価サンプルのセラミック回路基板は、図3Bに示すセラミック回路基板と同様の構成を有する。すなわち、第1金属板104のサイズが、縦×横=25mm×25mm、厚み=2mmであり、第2金属板106のサイズが、縦×横=25mm×25mm、厚み=0.1mmである点以外は、実施例1と同様にして比較例1に係る10個の評価サンプルを作製した。
比較例2に係る評価サンプルは、図3Aに示すセラミック回路基板と同様の構成を有する。すなわち、第1金属板104のサイズが、縦×横=25mm×25mm、厚み=2mmであり、第2金属板106のサイズが、縦×横=25mm×25mm、厚み=2mmである点以外は、実施例1と同様にして比較例2に係る10個の評価サンプルを作製した。
先ず、評価方法として、温度=−40℃〜125℃の熱サイクル試験を実施した。サイクル数=100サイクルとし、1サイクル当たり、−40℃(低温)下で30分、125℃(高温)下で30分保持した。熱サイクル試験終了後に、接合層へのクラックの発生率と、セラミック基板へのクラックの発生率を評価した。具体的には、接合層へのクラックの発生率は、10個の評価サンプルのうち、接合層24(接合層110)にクラックが発生した評価サンプルの個数で表し、セラミック基板へのクラックの発生率は、10個の評価サンプルのうち、セラミック基板12(セラミック基板102)にクラックが発生した評価サンプルの個数で表した。表1には、クラックが発生した評価サンプルの個数/評価サンプルの母数(=10)で表記した。評価結果を下記表1に示す。
12a…表面 12b…裏面
14…第1金属板 14a…第1対向面
16…第2金属板 16a…第2対向面
24…接合層 26…パワー半導体
28…電子デバイス 30…ヒートシンク
32…界面
Claims (6)
- セラミック基板と、
前記セラミック基板の表面に接合された第1の金属板と、
前記セラミック基板の裏面に接合された第2の金属板とを有し、
前記セラミック基板の表面のサイズは、前記第1の金属板の前記セラミック基板と対向する側の面のサイズよりも小さく、
前記セラミック基板の裏面のサイズは、前記第2の金属板の前記セラミック基板と対向する側の面のサイズよりも大きく、
前記第1の金属板の前記セラミック基板と対向する側の面の反対側の面は、パワー半導体が実装される面であることを特徴とするセラミック回路基板。 - 請求項1記載のセラミック回路基板において、
前記第1の金属板の前記セラミック基板と対向する側の面内に、前記セラミック基板の表面全体が含まれるように、前記セラミック基板と前記第1の金属板とが接合されていることを特徴とするセラミック回路基板。 - 請求項1又は2記載のセラミック回路基板において、
前記セラミック基板の前記裏面内に、前記第2の金属板の前記セラミック基板と対向する側の面全体が含まれる位置に、前記第2の金属板が接合されていることを特徴とするセラミック回路基板。 - 請求項1〜3のいずれか1項に記載のセラミック回路基板において、
前記第1の金属板の厚みは前記第2の金属板の厚みよりも大きいことを特徴とするセラミック回路基板。 - 請求項4記載のセラミック回路基板において、
前記セラミック基板の厚みをta、前記第1の金属板の厚みをt1、前記第2の金属板の厚みをt2としたとき、
t2<ta<t1
であることを特徴とするセラミック回路基板。 - 請求項1〜5のいずれか1項に記載のセラミック回路基板と、
前記セラミック回路基板における前記第1の金属板の前記セラミック基板と対向する側の面の反対側の面に実装されたパワー半導体とを有することを特徴とする電子デバイス。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2013169261A JP6139329B2 (ja) | 2013-08-16 | 2013-08-16 | セラミック回路基板及び電子デバイス |
EP14160453.8A EP2838326B1 (en) | 2013-08-16 | 2014-03-18 | Electronic device |
US14/457,429 US9439279B2 (en) | 2013-08-16 | 2014-08-12 | Ceramic circuit board and electronic device |
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JP2013169261A JP6139329B2 (ja) | 2013-08-16 | 2013-08-16 | セラミック回路基板及び電子デバイス |
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JP2015037174A JP2015037174A (ja) | 2015-02-23 |
JP2015037174A5 JP2015037174A5 (ja) | 2016-07-21 |
JP6139329B2 true JP6139329B2 (ja) | 2017-05-31 |
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US (1) | US9439279B2 (ja) |
EP (1) | EP2838326B1 (ja) |
JP (1) | JP6139329B2 (ja) |
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KR101956996B1 (ko) * | 2016-12-15 | 2019-06-24 | 현대자동차주식회사 | 양면냉각형 파워모듈 |
US10601314B2 (en) * | 2017-09-08 | 2020-03-24 | Infineon Technologies Austria Ag | Power semiconductor systems having inductor modules, and methods of manufacturing inductor modules and power semiconductor systems having inductor modules |
EP3506344A1 (de) * | 2017-12-29 | 2019-07-03 | Siemens Aktiengesellschaft | Halbleiterbaugruppe |
EP3796761A4 (en) * | 2018-05-16 | 2022-01-26 | Kabushiki Kaisha Toshiba | CERAMIC COPPER CIRCUIT BOARD AND METHOD OF MANUFACTURE THEREOF |
KR102574378B1 (ko) | 2018-10-04 | 2023-09-04 | 현대자동차주식회사 | 파워모듈 |
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JP3847954B2 (ja) | 1998-05-22 | 2006-11-22 | 株式会社東芝 | セラミックス回路基板の製造方法 |
JP3922538B2 (ja) * | 2002-04-18 | 2007-05-30 | 日立金属株式会社 | セラミックス回路基板の製造方法 |
JP4028452B2 (ja) * | 2003-08-27 | 2007-12-26 | Dowaホールディングス株式会社 | 電子部品搭載基板およびその製造方法 |
JP2005332874A (ja) * | 2004-05-18 | 2005-12-02 | Hitachi Metals Ltd | 回路基板及びこれを用いた半導体装置 |
JP2006041231A (ja) * | 2004-07-28 | 2006-02-09 | Kyocera Corp | セラミック回路基板および電気装置 |
WO2009116439A1 (ja) * | 2008-03-17 | 2009-09-24 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板及びその製造方法、並びに、ヒートシンク付パワーモジュール、パワーモジュール用基板 |
US8223498B2 (en) * | 2009-11-11 | 2012-07-17 | Juniper Networks, Inc. | Thermal interface members for removable electronic devices |
JP5837754B2 (ja) * | 2011-03-23 | 2015-12-24 | Dowaメタルテック株式会社 | 金属−セラミックス接合基板およびその製造方法 |
CN104067386B (zh) * | 2012-02-01 | 2019-05-28 | 三菱综合材料株式会社 | 功率模块用基板的制造方法 |
DE102012103786B4 (de) * | 2012-04-30 | 2017-05-18 | Rogers Germany Gmbh | Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates |
KR102094566B1 (ko) * | 2012-08-31 | 2020-03-27 | 미쓰비시 마테리알 가부시키가이샤 | 파워 모듈용 기판 및 파워 모듈 |
CN104718615B (zh) * | 2012-10-04 | 2018-01-02 | 株式会社东芝 | 半导体电路板及其制造方法和使用其的半导体装置 |
JP6307832B2 (ja) * | 2013-01-22 | 2018-04-11 | 三菱マテリアル株式会社 | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール |
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2013
- 2013-08-16 JP JP2013169261A patent/JP6139329B2/ja active Active
-
2014
- 2014-03-18 EP EP14160453.8A patent/EP2838326B1/en active Active
- 2014-08-12 US US14/457,429 patent/US9439279B2/en active Active
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Publication number | Publication date |
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US20150049442A1 (en) | 2015-02-19 |
US9439279B2 (en) | 2016-09-06 |
EP2838326A1 (en) | 2015-02-18 |
EP2838326B1 (en) | 2018-11-28 |
JP2015037174A (ja) | 2015-02-23 |
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