JP6326853B2 - 回路装置及び電子機器 - Google Patents
回路装置及び電子機器 Download PDFInfo
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Description
図1に本実施形態の回路装置の回路構成例を示す。本実施形態の回路装置は、ブリッジ回路10、制御回路20、検出回路30を含む。またプリドライバー18を含むことができる。なお本実施形態の回路装置は図1の構成に限定されず、その構成要素の一部を省略したり、他の構成要素を追加するなどの種々の変形実施が可能である。
図1の回路装置では、ブリッジ回路10がチョッピング電流によりモーター100を駆動する際に、ブリッジ回路10を構成するトランジスターQ1〜Q4のドレインには大電流が流れる。この大電流は、チョッピング動作によりオン・オフしたりその流れる向きが反転するため、ブリッジ回路10のトランジスターQ1〜Q4のドレイン電圧は大きく電位変動する。このような電位変動が発生すると、この電位変動がノイズとなって、検出回路30等のアナログ回路が悪影響を受けて、例えば検出回路30の検出動作に不具合が生じてしまう。
次に図4の左側の断面図を用いて、本実施形態の回路装置のトランジスターのデバイス構造の詳細について説明する。本実施形態では、図4の断面図に示すように、ブリッジ回路10を構成するトランジスターQ1〜Q4として、DMOS(Double-diffused Metal Oxide Semiconductor)構造のトランジスターを用いている。一方、検出回路30やロジック回路20等を構成するトランジスターとして、CMOS(C omplementary Metal Oxide Semiconductor)構造のトランジスターを用いている。
次に、図5を用いて、ガード領域2の詳細について説明する。なおガード領域4はガード領域2と同様の構造であるため、詳細な説明は省略する。
図10(A)〜図13(C)を用いて、DMOS構造のトランジスター及びガード領域の製造プロセスフローについて説明する。なお、図面左側に、ローサイド側のN型のトランジスター(Q2、Q4)を示し、図面右側に、ハイサイド側のP型のトランジスター(Q1、Q3)を示す。また図面中央に、ガード領域を示す。ここではガード領域4の製造プロセスフローを示しているが、ガード領域2についても同様の製造プロセスフローで形成できる。
図14に、本実施形態の回路装置200(モータードライバー)が適用された電子機器の構成例を示す。電子機器は、処理部300、記憶部310、操作部320、入出力部330、回路装置200、これらの各部を接続するバス340、モーター280を含む。以下ではモーター駆動によりヘッドや紙送りを制御するプリンターを例にとり説明するが、本実施形態はこれに限定されず、種々の電子機器に適用可能である。
PR1〜PR4 ドライバー回路、TMA〜TMD 端子、DAC D/A変換回路、
CP 比較回路、DG1〜DG4 駆動信号、IN1〜IN4 制御信号、
RS センス抵抗、DI 寄生ダイオード、CP 寄生容量、
PD1〜PD4 パッド、SC1〜SC5 ソース、DN1〜DN5 ドレイン、
PSB P型基板、NB1、NB2、NB3 N型埋め込み層、
PB1、PB2 P型埋め込み層、PW1、PW2、PW4 P型ウェル、
DNW1、DNW2 ディープN型ウェル、NW1、NW3、NW4 N型ウェル、
PBD P型ボディー、HPF P型不純物層、
NP11、NP12、NP2、NP3、NP21、NP22 N型プラグ、
GT1、GT2、GT3 ゲート層、SO 絶縁層(酸化膜)、ML 金属層、
2、4 ガード領域、10 ブリッジ回路、18 プリドライバー、20 制御回路、
30 検出回路、32 基準電圧生成回路、40、42、44 境界領域、
60、62、64、68、72、74、80、82、92、94、N型不純物層、
66、70、76、78、84、90、91、96、98 P型不純物層、
63、67 絶縁膜、100 モーター、200 回路装置、
300 処理部、310 記憶部、320 操作部、330 入出力部、
Claims (9)
- ハイサイド側のトランジスターとローサイド側のトランジスターとを有するブリッジ回路と、
前記ブリッジ回路に流れる電流を検出する検出回路と、
前記検出回路での検出結果に基づいて、前記ハイサイド側のトランジスター及び前記ローサイド側のトランジスターのオン・オフ制御を行う制御回路と、
前記ハイサイド側のトランジスターと前記検出回路との間であり、且つ、前記ローサイド側のトランジスターと前記検出回路との間に設けられ、回路装置の基板に基板電位を供給するためのガード領域と、
を含み、
前記ハイサイド側のトランジスター及び前記ローサイド側のトランジスターは、第1導電型の前記基板に形成された第2導電型の埋め込み層の上に形成されるDMOS構造のトランジスターであり、
前記ハイサイド側のトランジスターの前記検出回路側の境界領域には、第2導電型の前記埋め込み層に電圧を供給するための第2導電型の第1のプラグが設けられ、
前記ハイサイド側のトランジスターの前記検出回路と反対側の境界領域には、第2導電型の前記埋め込み層に電圧を供給するための第2導電型の第2のプラグが設けられることを特徴とする回路装置。 - 請求項1において、
前記ガード領域は、
第1導電型の前記基板に形成された第1導電型の埋め込み層と、
第1導電型の前記埋め込み層の上に形成された第1導電型のウェルと、
第1導電型の前記ウェルの上に形成された第1導電型の不純物層と、
有することを特徴とする回路装置。 - 請求項2において、
第1導電型の前記ウェルは、エピタキシャル層に対して第1導電型の不純物が導入された層であることを特徴とする回路装置。 - 請求項1において、
前記DMOS構造のトランジスターは、第2導電型の前記埋め込み層の上においてエピタキシャル層により形成された第2導電型のディープウェルに形成されることを特徴とする回路装置。 - 請求項4において、
前記ガード領域は、
第1導電型の埋め込み層と、
第1導電型の前記埋め込み層の上においてエピタキシャル層により形成された第1導電型のウェルと、
第1導電型の前記ウェルに形成された第1導電型の不純物層と、
を有することを特徴とする回路装置。 - 請求項1乃至5のいずれかにおいて、
前記ハイサイド側のトランジスターと前記ローサイド側のトランジスターとの間に設けられ、前記基板を前記基板電位に設定するための第2のガード領域を有することを特徴とする回路装置。 - 請求項1乃至6のいずれかにおいて、
前記DMOS構造のトランジスターが形成される第2導電型の前記埋め込み層は、P型の前記基板の上の第1のN型埋め込み層であり、
前記検出回路は、
前記第1のN型埋め込み層と分離された第2のN型埋め込み層の上に形成されるCMOS構造のトランジスターにより構成されることを特徴とする回路装置。 - 請求項7において、
前記CMOS構造のトランジスターは、
前記第2のN型埋め込み層の上に形成されたP型埋め込み層の上に形成されることを特徴とする回路装置。 - 請求項1乃至8のいずれかに記載の回路装置を含むことを特徴とする電子機器。
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JPH0350762A (ja) * | 1989-07-19 | 1991-03-05 | Hitachi Ltd | 電流検出回路 |
JP2000299928A (ja) * | 1999-02-14 | 2000-10-24 | Yazaki Corp | 電源供給制御装置及び半導体装置 |
JP3899926B2 (ja) * | 2001-12-19 | 2007-03-28 | 株式会社デンソー | 電気負荷駆動装置 |
US6784493B2 (en) * | 2002-06-11 | 2004-08-31 | Texas Instruments Incorporated | Line self protecting multiple output power IC architecture |
JP4094984B2 (ja) * | 2003-04-24 | 2008-06-04 | 三菱電機株式会社 | 半導体装置 |
JP5060750B2 (ja) | 2006-08-02 | 2012-10-31 | ローム株式会社 | モータ駆動回路およびそれを用いた電子機器 |
JP2008236983A (ja) | 2007-03-23 | 2008-10-02 | Matsushita Electric Ind Co Ltd | モータ駆動装置およびモータ駆動方法 |
JP4697242B2 (ja) | 2008-02-21 | 2011-06-08 | セイコーエプソン株式会社 | 半導体装置 |
JP4595002B2 (ja) * | 2008-07-09 | 2010-12-08 | 株式会社東芝 | 半導体装置 |
KR101986090B1 (ko) | 2012-04-06 | 2019-06-05 | 삼성전자 주식회사 | 가드링을 포함하는 반도체 장치 및 이를 포함하는 반도체 시스템 |
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CN104852646B (zh) | 2018-06-22 |
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