JP6278591B2 - 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 - Google Patents
半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 Download PDFInfo
- Publication number
- JP6278591B2 JP6278591B2 JP2012249335A JP2012249335A JP6278591B2 JP 6278591 B2 JP6278591 B2 JP 6278591B2 JP 2012249335 A JP2012249335 A JP 2012249335A JP 2012249335 A JP2012249335 A JP 2012249335A JP 6278591 B2 JP6278591 B2 JP 6278591B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor
- atoms
- epitaxial
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 157
- 238000004519 manufacturing process Methods 0.000 title claims description 49
- 238000003384 imaging method Methods 0.000 title description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 89
- 150000002500 ions Chemical class 0.000 claims description 88
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 80
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 75
- 229910052710 silicon Inorganic materials 0.000 claims description 74
- 239000010703 silicon Substances 0.000 claims description 73
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 54
- 238000005247 gettering Methods 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 37
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 239000000470 constituent Substances 0.000 claims description 23
- 229910052796 boron Inorganic materials 0.000 claims description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 239000002244 precipitate Substances 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 3
- 238000002407 reforming Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 181
- 239000010410 layer Substances 0.000 description 84
- 125000004429 atom Chemical group 0.000 description 63
- 238000000034 method Methods 0.000 description 53
- 230000000052 comparative effect Effects 0.000 description 28
- 239000000178 monomer Substances 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 230000001133 acceleration Effects 0.000 description 15
- 238000011109 contamination Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- 230000007547 defect Effects 0.000 description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 11
- 238000011084 recovery Methods 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- -1 carbon ions Chemical class 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910001385 heavy metal Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000001556 precipitation Methods 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 150000001721 carbon Chemical group 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229940032122 claris Drugs 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- IHCDKJZZFOUARO-UHFFFAOYSA-M sulfacetamide sodium Chemical compound O.[Na+].CC(=O)[N-]S(=O)(=O)C1=CC=C(N)C=C1 IHCDKJZZFOUARO-UHFFFAOYSA-M 0.000 description 1
- 238000001269 time-of-flight mass spectrometry Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Chemical Vapour Deposition (AREA)
Description
1×1017〜1×1022atoms/cm3の範囲内がより好ましく、1×1019〜1×1021atoms/cm3の範囲内がさらに好ましい。
以下、本発明の実施例について説明する。
まず、CZ法により、表1に示す濃度の炭素または窒素の少なくとも一方を含む単結晶シリコンインゴットを育成し、得られた単結晶シリコンインゴットから採取されたn型のシリコンウェーハ(直径:300mm、厚さ:775μm、ドーパント種類:リン、ドーパント濃度:4×1014atoms/cm3、酸素濃度15×1017atoms)を用意した。次いで、クラスターイオン発生装置(日新イオン機器社製、型番:CLARIS)を用いて、クラスターイオンとしてC5H5クラスターを生成し、ドーズ量9.00×1013Clusters/cm2(炭素のドーズ量4.5×1014atoms/cm2)、炭素1原子当たりの加速電圧14.77keV/atomの条件で、各シリコンウェーハの表面に照射した。続いて、各シリコンウェーハをHF洗浄した後、枚葉式エピタキシャル成長装置(アプライドマテリアルズ社製)内に搬送し、装置内で1120℃の温度で30秒の水素ベーク処理を施した後、水素をキャリアガス、トリクロロシランをソースガスとして1150℃でCVD法により、シリコンウェーハ上にシリコンのエピタキシャル層(厚さ:6μm、ドーパント種類:リン、ドーパント濃度:1×1015atoms/cm3)をエピタキシャル成長させ、本発明に従うエピタキシャルシリコンウェーハとした。
クラスターイオン照射工程に替えて、CO2を材料ガスとして、炭素のモノマーイオンを生成し、ドーズ量9.00×1013atoms/cm2、加速電圧300keV/atomの条件でモノマーイオン注入工程を行った以外は、本発明例1〜5と同様にして、比較例にかかるエピタキシャルシリコンウェーハを製造した。
クラスターイオンの照射を行わなかった以外は、本発明例1と同一条件で、比較例にかかるエピタキシャルシリコンウェーハを作製した。
クラスターイオンの照射を行わなかった以外は、本発明例3と同一条件で、比較例にかかるエピタキシャルシリコンウェーハを作製した。
クラスターイオンの照射を行わず、また、炭素および窒素のいずれも添加しなかった以外は、本発明例1と同一条件で、比較例にかかるエピタキシャルシリコンウェーハを作製した。
まず、クラスターイオンの照射直後と、モノマーイオンの注入直後における、炭素の分布の相違を明らかにするため、本発明例1および比較例1について、エピタキシャル層形成の前のシリコンウェーハについて、SIMS測定を行った。得られた炭素濃度プロファイルを図4に参考に示す。ここで、図4の横軸の深さはシリコンウェーハの表面をゼロとしている。
本発明例および比較例で作製した各サンプルのエピタキシャルシリコンウェーハ表面を、Ni汚染液(1.0×1012/cm2)で、それぞれスピンコート汚染法を用いて故意に汚染し、引き続き900℃、30分の熱処理を施した。その後、SIMS測定を行った。本発明例および比較例について、ゲッタリング能力の評価は、Ni濃度のピーク値で評価を行った。この評価は、評価基準をNi濃度プロファイルのピーク濃度の値によって以下のとおりに分類して行った。得られた評価結果を表1に示す。
◎:1×1017atoms/cm3以上
○:7.5×1016atoms/cm3以上1×1017atoms/cm3未満
△:7.5×1016atoms/cm3未満
本発明例および比較例で作製した各エピタキシャルシリコンウェーハに対して、800℃×4時間及び1000℃×16時間の熱処理を施した後、シリコンウェーハ(バルクウェーハ)におけるBMDの密度を求めた。これは、シリコンウェーハを劈開し、劈開断面に対してライトエッチング(エッチング量:2μm)処理を施した後に、光学顕微鏡を用いてウェーハ劈開断面を観察して求めた。
本発明例および比較例で作製した各サンプルのエピタキシャルウェーハの表面を、KLA−Tenchor社製:Surfscan SP−2を用いて観察評価し、LPDの発生状況を調べた。その際、観察モードはObliqueモード(斜め入射モード)とし、表面ピットの推定は、Wide Narrowチャンネルの検出サイズ比に基づいて行った。続いて、走査型電子顕微鏡(SEM:Scanning Electron Microscope)を用いて、LPDの発生部位を観察評価して、LPDが積層欠陥(SF:Stacking Fault)であるか否かを評価した。
その結果、本発明例1〜5および比較例6〜8の各エピタキシャルシリコンウェーハは、いずれもエピタキシャル層表面で観察されたSFの個数は5個/ウェーハ以下であったのに対し、モノマーイオンの注入を行った比較例1〜5の各エピタキシャルシリコンウェーハは、いずれも10個/ウェーハ以上のSFが観察された。これは比較例1〜5において、エピタキシャル成長処理前に回復熱処理を施していないことから、モノマーイオンの注入によりウェーハ表面部の結晶性が乱れたままでエピタキシャル成長することに起因するものと考えられる。
10 半導体ウェーハ
10A 半導体ウェーハの表面
12 バルク半導体ウェーハ
14 第2エピタキシャル層
16 クラスターイオン
18 改質層
20 第1エピタキシャル層
Claims (21)
- 炭素および窒素の少なくとも一方を含む半導体ウェーハにゲッタリングに寄与する構成元素を含むクラスターイオンを照射して、該半導体ウェーハの表面に、前記クラスターイオンの構成元素から形成された改質層を形成する第1工程と、
前記半導体ウェーハの改質層上に第1エピタキシャル層を形成する第2工程と、
を有し、該第2工程後の改質層における前記構成元素の深さ方向の濃度プロファイルの半値幅が100nm以下である半導体エピタキシャルウェーハを得ることを特徴とする半導体エピタキシャルウェーハの製造方法。 - 前記半導体ウェーハはシリコンウェーハである、請求項1に記載の半導体エピタキシャルウェーハの製造方法。
- 前記半導体ウェーハが、シリコンウェーハの表面に第2エピタキシャル層が形成されたエピタキシャルウェーハであり、前記第1工程において前記改質層は前記第2エピタキシャル層の表面に形成される、請求項1または2に記載の半導体エピタキシャルウェーハの製造方法。
- 前記半導体ウェーハ中の炭素濃度は1×1015atoms/cm3以上1×1017atoms/cm3以下(ASTM F123 1981)であり、窒素濃度は5×1012atoms/cm3以上5×1014atoms/cm3以下である、請求項1〜3のいずれか一項に記載の半導体エピタキシャルウェーハの製造方法。
- 前記半導体ウェーハ中の酸素濃度は9×1017atoms/cm3以上18×1017atoms/cm3以下(ASTM F121 1979)である、請求項1〜4のいずれか一項に記載の半導体エピタキシャルウェーハの製造方法。
- 前記第1工程の後かつ前記第2工程の前に、前記半導体ウェーハに対して、酸素析出物の形成を促進するための熱処理を施す、請求項1〜5のいずれか一項に記載の半導体エピタキシャルウェーハの製造方法。
- 前記クラスターイオンが構成元素として炭素を含む、請求項1〜6のいずれか一項に記載の半導体エピタキシャルウェーハの製造方法。
- 前記クラスターイオンが構成元素として炭素を含む2種以上の元素を含む、請求項7に記載の半導体エピタキシャルウェーハの製造方法。
- 前記クラスターイオンが、さらにドーパント元素を含み、該ドーパント元素がホウ素、リン、ヒ素およびアンチモンからなる群から選ばれた1以上の元素である、請求項7または8に記載の半導体エピタキシャルウェーハの製造方法。
- 前記第1工程は、炭素1原子あたりの加速電圧が50keV/atom以下、クラスターサイズが100個以下、炭素のドーズ量が1×1016atoms/cm2以下の条件で行う、請求項7〜9のいずれか一項に記載の半導体エピタキシャルウェーハの製造方法。
- 炭素および窒素の少なくとも一方を含む半導体ウェーハと、該半導体ウェーハの表面に形成された、該半導体ウェーハ中に固溶しゲッタリングに寄与する所定元素から形成された改質層と、該改質層上の第1エピタキシャル層と、を有し、
前記改質層における前記所定元素の深さ方向の濃度プロファイルの半値幅が100nm以下であることを特徴とする半導体エピタキシャルウェーハ。 - 前記半導体ウェーハがシリコンウェーハである、請求項11に記載の半導体エピタキシャルウェーハ。
- 前記半導体ウェーハが、シリコンウェーハの表面に第2エピタキシャル層が形成されたエピタキシャルウェーハであり、前記改質層は前記第2エピタキシャル層の表面に位置する、請求項11または12に記載の半導体エピタキシャルウェーハ。
- 前記半導体ウェーハ中の炭素濃度は1×1015atoms/cm3以上1×1017atoms/cm3以下(ASTM F123 1981)であり、窒素濃度は5×1012atoms/cm3以上5×1014atoms/cm3以下である、請求項11〜13のいずれか一項に記載の半導体エピタキシャルウェーハ。
- 前記半導体ウェーハ中の酸素濃度は9×1017atoms/cm3以上18×1017atoms/cm3以下(ASTM F121 1979)である、請求項11〜14のいずれか一項に記載の半導体エピタキシャルウェーハ。
- 前記半導体ウェーハの表面からの深さが150nm以下の範囲内に、前記改質層における前記濃度プロファイルのピークが位置する、請求項11〜15のいずれか一項に記載の半導体エピタキシャルウェーハ。
- 前記改質層における前記濃度プロファイルのピーク濃度が、1×1015atoms/cm3以上である、請求項11〜16のいずれか一項に記載の半導体エピタキシャルウェーハ。
- 前記所定元素が炭素を含む、請求項11〜17のいずれか一項に記載の半導体エピタキシャルウェーハ。
- 前記所定元素が炭素を含む2種以上の元素を含む、請求項18に記載の半導体エピタキシャルウェーハ。
- 前記所定元素がさらにドーパント元素を含み、該ドーパント元素がホウ素、リン、ヒ素およびアンチモンからなる群から選ばれた1以上の元素である、請求項18または19に記載の半導体エピタキシャルウェーハ。
- 請求項1〜10のいずれか一項に記載の製造方法で製造された半導体エピタキシャルウェーハまたは請求項11〜20のいずれか一項に記載の半導体エピタキシャルウェーハの、表面に位置する第1エピタキシャル層に、固体撮像素子を形成することを特徴とする固体撮像素子の製造方法。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012249335A JP6278591B2 (ja) | 2012-11-13 | 2012-11-13 | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 |
DE112013005407.8T DE112013005407B4 (de) | 2012-11-13 | 2013-11-11 | Verfahren zur Herstellung von Halbleiter-Epitaxiewafern, Halbleiter-Epitaxiewafer, und Verfahren zur Herstellung von Festkörper-Bildsensorvorrichtungen |
CN201380059268.6A CN104781918B (zh) | 2012-11-13 | 2013-11-11 | 半导体外延晶片的制造方法、半导体外延晶片以及固体摄像元件的制造方法 |
KR1020157013185A KR101964937B1 (ko) | 2012-11-13 | 2013-11-11 | 반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법 |
US14/442,373 US20160181313A1 (en) | 2012-11-12 | 2013-11-11 | Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device |
KR1020177005839A KR101837454B1 (ko) | 2012-11-13 | 2013-11-11 | 반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법 |
PCT/JP2013/006629 WO2014076933A1 (ja) | 2012-11-13 | 2013-11-11 | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 |
TW102141072A TWI549188B (zh) | 2012-11-13 | 2013-11-12 | 半導體磊晶晶圓的製造方法、半導體磊晶晶圓及固體攝影元件的製造方法 |
US16/717,706 US20200203418A1 (en) | 2012-11-13 | 2019-12-17 | Method of producing semiconductor epitaxial wafer, semiconductor epitaxial water, and method of producing solid-state image sensing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012249335A JP6278591B2 (ja) | 2012-11-13 | 2012-11-13 | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017037374A Division JP2017123477A (ja) | 2017-02-28 | 2017-02-28 | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014099454A JP2014099454A (ja) | 2014-05-29 |
JP2014099454A5 JP2014099454A5 (ja) | 2015-10-08 |
JP6278591B2 true JP6278591B2 (ja) | 2018-02-14 |
Family
ID=50730867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012249335A Active JP6278591B2 (ja) | 2012-11-12 | 2012-11-13 | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20160181313A1 (ja) |
JP (1) | JP6278591B2 (ja) |
KR (2) | KR101964937B1 (ja) |
CN (1) | CN104781918B (ja) |
DE (1) | DE112013005407B4 (ja) |
TW (1) | TWI549188B (ja) |
WO (1) | WO2014076933A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6260100B2 (ja) * | 2013-04-03 | 2018-01-17 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
KR20150134543A (ko) * | 2014-05-22 | 2015-12-02 | 삼성전자주식회사 | 소자 제조용 기판 및 반도체 소자 |
EP3113224B1 (en) | 2015-06-12 | 2020-07-08 | Canon Kabushiki Kaisha | Imaging apparatus, method of manufacturing the same, and camera |
JP6493104B2 (ja) * | 2015-09-03 | 2019-04-03 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法、品質予測方法および品質評価方法 |
JP6485315B2 (ja) * | 2015-10-15 | 2019-03-20 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法 |
KR20240056775A (ko) | 2015-12-04 | 2024-04-30 | 글로벌웨이퍼스 씨오., 엘티디. | 낮은 산소 함량 실리콘의 제조를 위한 시스템들 및 방법들 |
JP6459948B2 (ja) * | 2015-12-15 | 2019-01-30 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法 |
JP6504082B2 (ja) * | 2016-02-29 | 2019-04-24 | 株式会社Sumco | 半導体エピタキシャルウェーハおよびその製造方法ならびに固体撮像素子の製造方法 |
JP6737066B2 (ja) * | 2016-08-22 | 2020-08-05 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法 |
JP2018098266A (ja) * | 2016-12-08 | 2018-06-21 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法およびカメラ |
JP6766700B2 (ja) * | 2017-03-08 | 2020-10-14 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハおよび固体撮像素子の製造方法 |
EP3428325B1 (en) * | 2017-07-10 | 2019-09-11 | Siltronic AG | Semiconductor wafer made of single-crystal silicon and process for the production thereof |
JP6787268B2 (ja) * | 2017-07-20 | 2020-11-18 | 株式会社Sumco | 半導体エピタキシャルウェーハおよびその製造方法、ならびに固体撮像素子の製造方法 |
JP6801682B2 (ja) * | 2018-02-27 | 2020-12-16 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法及び半導体デバイスの製造方法 |
JP6819631B2 (ja) * | 2018-02-27 | 2021-01-27 | 株式会社Sumco | エピタキシャルシリコンウェーハの不純物ゲッタリング能力の評価方法 |
JP6874718B2 (ja) * | 2018-03-01 | 2021-05-19 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法 |
JP6988843B2 (ja) * | 2019-02-22 | 2022-01-05 | 株式会社Sumco | 半導体エピタキシャルウェーハ及びその製造方法 |
US11271079B2 (en) * | 2020-01-15 | 2022-03-08 | Globalfoundries U.S. Inc. | Wafer with crystalline silicon and trap rich polysilicon layer |
JP7259791B2 (ja) * | 2020-03-25 | 2023-04-18 | 株式会社Sumco | シリコンウェーハへのクラスターイオン注入による白傷欠陥低減効果の評価方法及びエピタキシャルシリコンウェーハの製造方法 |
CN113109415B (zh) * | 2021-03-26 | 2024-06-14 | 南昌大学 | 一种适用于二次离子质谱分析的多层膜界面位置表征方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2662321B2 (ja) | 1991-05-31 | 1997-10-08 | 科学技術振興事業団 | 超低速クラスターイオンビームによる表面処理方法 |
JP3384506B2 (ja) | 1993-03-30 | 2003-03-10 | ソニー株式会社 | 半導体基板の製造方法 |
JPH0941138A (ja) | 1995-07-31 | 1997-02-10 | Res Dev Corp Of Japan | ガスクラスターイオンビームによるイオン注入法 |
JPH11251322A (ja) * | 1998-02-27 | 1999-09-17 | Sony Corp | エピタキシャルシリコン基板及び固体撮像装置並びにこれらの製造方法 |
US6903373B1 (en) * | 1999-11-23 | 2005-06-07 | Agere Systems Inc. | SiC MOSFET for use as a power switch and a method of manufacturing the same |
JP2002134511A (ja) | 2000-08-16 | 2002-05-10 | Sony Corp | 半導体基板の製造方法および固体撮像装置の製造方法 |
JP2003163216A (ja) * | 2001-09-12 | 2003-06-06 | Wacker Nsce Corp | エピタキシャルシリコンウエハおよびその製造方法 |
JP4604889B2 (ja) * | 2005-05-25 | 2011-01-05 | 株式会社Sumco | シリコンウェーハの製造方法、並びにシリコン単結晶育成方法 |
EP2469584A1 (en) * | 2005-12-09 | 2012-06-27 | Semequip, Inc. | Method of implanting ions |
JP2007317760A (ja) * | 2006-05-24 | 2007-12-06 | Sharp Corp | 半導体装置及びその製造方法 |
KR20090029209A (ko) * | 2006-06-13 | 2009-03-20 | 세미이큅, 인코포레이티드 | 이온 주입을 위한 이온 빔 장치 및 방법 |
US7479466B2 (en) * | 2006-07-14 | 2009-01-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of heating semiconductor wafer to improve wafer flatness |
JP2008294245A (ja) * | 2007-05-25 | 2008-12-04 | Shin Etsu Handotai Co Ltd | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
JP2008311418A (ja) * | 2007-06-14 | 2008-12-25 | Shin Etsu Handotai Co Ltd | エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法 |
US7981483B2 (en) * | 2007-09-27 | 2011-07-19 | Tel Epion Inc. | Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices |
US20090233004A1 (en) * | 2008-03-17 | 2009-09-17 | Tel Epion Inc. | Method and system for depositing silicon carbide film using a gas cluster ion beam |
US8779462B2 (en) * | 2008-05-19 | 2014-07-15 | Infineon Technologies Ag | High-ohmic semiconductor substrate and a method of manufacturing the same |
JP2010016169A (ja) * | 2008-07-03 | 2010-01-21 | Shin Etsu Handotai Co Ltd | エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法 |
JP2010062529A (ja) * | 2008-08-04 | 2010-03-18 | Toshiba Corp | 半導体装置の製造方法 |
JP2010040864A (ja) * | 2008-08-06 | 2010-02-18 | Sumco Corp | エピタキシャルシリコンウェーハ及びその製造方法 |
US8263484B2 (en) | 2009-03-03 | 2012-09-11 | Sumco Corporation | High resistivity silicon wafer and method for manufacturing the same |
US8226835B2 (en) * | 2009-03-06 | 2012-07-24 | Tel Epion Inc. | Ultra-thin film formation using gas cluster ion beam processing |
US8890291B2 (en) * | 2009-03-25 | 2014-11-18 | Sumco Corporation | Silicon wafer and manufacturing method thereof |
JP2011151318A (ja) * | 2010-01-25 | 2011-08-04 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP5440693B2 (ja) * | 2010-04-08 | 2014-03-12 | 信越半導体株式会社 | シリコンエピタキシャルウエーハ、シリコンエピタキシャルウエーハの製造方法、及び半導体素子又は集積回路の製造方法 |
JP2011253983A (ja) * | 2010-06-03 | 2011-12-15 | Disco Abrasive Syst Ltd | シリコンウェーハへのゲッタリング層付与方法 |
US10181402B2 (en) * | 2010-08-23 | 2019-01-15 | Exogenesis Corporation | Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby |
JP2012059849A (ja) * | 2010-09-08 | 2012-03-22 | Shin Etsu Handotai Co Ltd | シリコンエピタキシャルウェーハおよびシリコンエピタキシャルウェーハの製造方法 |
WO2012157162A1 (ja) * | 2011-05-13 | 2012-11-22 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 |
US9263271B2 (en) * | 2012-10-25 | 2016-02-16 | Infineon Technologies Ag | Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device |
-
2012
- 2012-11-13 JP JP2012249335A patent/JP6278591B2/ja active Active
-
2013
- 2013-11-11 CN CN201380059268.6A patent/CN104781918B/zh active Active
- 2013-11-11 KR KR1020157013185A patent/KR101964937B1/ko active IP Right Grant
- 2013-11-11 US US14/442,373 patent/US20160181313A1/en not_active Abandoned
- 2013-11-11 KR KR1020177005839A patent/KR101837454B1/ko active IP Right Grant
- 2013-11-11 WO PCT/JP2013/006629 patent/WO2014076933A1/ja active Application Filing
- 2013-11-11 DE DE112013005407.8T patent/DE112013005407B4/de active Active
- 2013-11-12 TW TW102141072A patent/TWI549188B/zh active
-
2019
- 2019-12-17 US US16/717,706 patent/US20200203418A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN104781918A (zh) | 2015-07-15 |
TWI549188B (zh) | 2016-09-11 |
KR101964937B1 (ko) | 2019-04-02 |
KR20150066598A (ko) | 2015-06-16 |
KR101837454B1 (ko) | 2018-03-12 |
DE112013005407T5 (de) | 2015-07-30 |
TW201428854A (zh) | 2014-07-16 |
KR20170026669A (ko) | 2017-03-08 |
JP2014099454A (ja) | 2014-05-29 |
CN104781918B (zh) | 2018-12-18 |
WO2014076933A1 (ja) | 2014-05-22 |
US20160181313A1 (en) | 2016-06-23 |
DE112013005407B4 (de) | 2024-04-25 |
US20200203418A1 (en) | 2020-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6278591B2 (ja) | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 | |
JP5673811B2 (ja) | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 | |
JP5799936B2 (ja) | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 | |
KR101882389B1 (ko) | 반도체 에피택셜 웨이퍼의 제조방법, 반도체 에피택셜 웨이퍼, 및 고체 촬상 소자의 제조방법 | |
JP5799935B2 (ja) | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 | |
TWI521567B (zh) | 磊晶矽晶圓的製造方法、磊晶矽晶圓及固體攝影元件的製造方法 | |
JP6107068B2 (ja) | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法 | |
JP2014099451A (ja) | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法 | |
JP6427946B2 (ja) | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法 | |
TW201635386A (zh) | 半導體磊晶晶圓的製造方法及固體攝像元件的製造方法 | |
JP6280301B2 (ja) | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法 | |
JP2017123477A (ja) | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 | |
JP6289805B2 (ja) | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 | |
JP6278592B2 (ja) | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 | |
JP6361779B2 (ja) | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法 | |
JP2015220242A (ja) | 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法 | |
JP6318728B2 (ja) | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 | |
JP2017175143A (ja) | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150824 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150824 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20150824 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20150914 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160426 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160622 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20161129 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180116 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6278591 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |