JP6213527B2 - 圧力センサ - Google Patents
圧力センサ Download PDFInfo
- Publication number
- JP6213527B2 JP6213527B2 JP2015130931A JP2015130931A JP6213527B2 JP 6213527 B2 JP6213527 B2 JP 6213527B2 JP 2015130931 A JP2015130931 A JP 2015130931A JP 2015130931 A JP2015130931 A JP 2015130931A JP 6213527 B2 JP6213527 B2 JP 6213527B2
- Authority
- JP
- Japan
- Prior art keywords
- membrane
- sensor chip
- sides
- piezoresistive effect
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000012528 membrane Substances 0.000 claims description 79
- 230000000694 effects Effects 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 37
- 229920005989 resin Polymers 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 31
- 238000000926 separation method Methods 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000003921 oil Substances 0.000 description 19
- 230000008646 thermal stress Effects 0.000 description 16
- 238000001514 detection method Methods 0.000 description 13
- 230000007423 decrease Effects 0.000 description 9
- 238000007789 sealing Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000010705 motor oil Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 230000012447 hatching Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
- G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0069—Electrical connection means from the sensor to its support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/04—Means for compensating for effects of changes of temperature, i.e. other than electric compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/304—Beam type
- H10N30/306—Cantilevers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
対して直交する厚さ方向の長さが局所的に薄いメンブレン(11c)が形成され、メンブレンにピエゾ抵抗効果素子(20−24)の形成されたセンサチップ(10)と、
センサチップの2つの端部(10a,10b)の内の一方を支持端(10a)として被覆するとともに固定し、2つの端部の内の他方を自由端(10b)としてセンサチップを片持ち支持する樹脂部(40)と、を有し、
メンブレンは樹脂部から離れた自由端に形成され、
樹脂部におけるセンサチップを被覆する部位とメンブレンとの長手方向における最短の離間距離が、センサチップにおける長手方向と厚さ方向それぞれに直交する短手方向の長さ以上である。
(第1実施形態)
図1〜図5に基づいて本実施形態に係る圧力センサを説明する。なお図1ではセンサチップ10の支持端10a、自由端10b、および、これらを連結する中央部10cとの境界を明示するために、その境界を一点鎖線で示している。また図2では構成を明りょうとするため、樹脂部40にハッチングを入れている。
10a…支持端
10b…自由端
11c…メンブレン
20−24…ピエゾ抵抗効果素子
40…樹脂部
100…圧力センサ
Claims (8)
- 長手方向に延び、前記長手方向に対して直交する厚さ方向の長さが局所的に薄いメンブレン(11c)が形成され、前記メンブレンにピエゾ抵抗効果素子(20−24)の形成されたセンサチップ(10)と、
前記センサチップの2つの端部(10a,10b)の内の一方を支持端(10a)として被覆するとともに固定し、2つの前記端部の内の他方を自由端(10b)として前記センサチップを片持ち支持する樹脂部(40)と、を有し、
前記メンブレンは前記樹脂部から離れた前記自由端に形成され、
前記樹脂部における前記センサチップを被覆する部位と前記メンブレンとの前記長手方向における最短の離間距離が、前記センサチップにおける前記長手方向と前記厚さ方向それぞれに直交する短手方向の長さ以上である圧力センサ。 - 前記センサチップは、一面(11a)に前記ピエゾ抵抗効果素子の形成された第1基板(11)、貫通孔(12a)の形成された第2基板(12)、前記ピエゾ抵抗効果素子を囲うための凹部(13a)の形成された第3基板(13)を有し、
前記第1基板の前記一面の反対側の裏面(11b)に、前記ピエゾ抵抗効果素子の形成領域の前記裏面側の投影領域が前記貫通孔を介して外部に露出されるように前記第2基板が直接接続され、
前記第1基板の前記一面に、前記ピエゾ抵抗効果素子の形成領域が前記凹部によって囲まれるように前記第3基板が直接接続されている請求項1に記載の圧力センサ。 - 前記メンブレンの前記裏面側は、前記投影領域における前記貫通孔を介して外部に露出された部位と相等しく、その平面形状が八角形を成している請求項2に記載の圧力センサ。
- 前記メンブレンの平面形状を成す8つの辺(11d,11e,11f)の内、前記長手方向に沿う2つを第1辺(11d)、前記短手方向に沿う2つを第2辺(11e)、前記長手方向および前記短手方向それぞれに対して傾斜する4つを第3辺(11f)とすると、
2つの前記第1辺が前記短手方向に並び、2つの前記第2辺が前記長手方向に並び、前記第1辺と前記第2辺とが、前記第3辺を介して連結されている請求項3に記載の圧力センサ。 - 前記ピエゾ抵抗効果素子を複数有し、
2つの前記第1辺と2つの前記第2辺それぞれの中央部に前記ピエゾ抵抗効果素子が配置されている請求項4に記載の圧力センサ。 - 複数の前記ピエゾ抵抗効果素子は前記長手方向に電流が流れるように前記メンブレンに形成され、
2つの前記第1辺と2つの前記第2辺それぞれの中央部に配置される前記ピエゾ抵抗効果素子によって2つのハーフブリッジ回路が構成され、
2つの前記ハーフブリッジ回路によってフルブリッジ回路が構成されている請求項5に記載の圧力センサ。 - 2つの前記ハーフブリッジ回路それぞれの中点電位を差動増幅する差動増幅回路(25)を有する請求項6に記載の圧力センサ。
- 前記支持端と接着剤(31)を介して機械的に連結されるインナリード(30)を有し、
前記支持端とともに、前記接着剤と前記インナリードは前記樹脂部によって被覆されている請求項1〜7いずれか1項に記載の圧力センサ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015130931A JP6213527B2 (ja) | 2015-06-30 | 2015-06-30 | 圧力センサ |
CN201680038124.6A CN107709950B (zh) | 2015-06-30 | 2016-06-02 | 压力传感器 |
PCT/JP2016/002679 WO2017002306A1 (ja) | 2015-06-30 | 2016-06-02 | 圧力センサ |
US15/738,431 US10527513B2 (en) | 2015-06-30 | 2016-06-02 | Pressure sensor with resin portion and membrane having reduced temperature change distortion |
DE112016003014.2T DE112016003014B4 (de) | 2015-06-30 | 2016-06-02 | Drucksensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015130931A JP6213527B2 (ja) | 2015-06-30 | 2015-06-30 | 圧力センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017015484A JP2017015484A (ja) | 2017-01-19 |
JP6213527B2 true JP6213527B2 (ja) | 2017-10-18 |
Family
ID=57608487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015130931A Active JP6213527B2 (ja) | 2015-06-30 | 2015-06-30 | 圧力センサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US10527513B2 (ja) |
JP (1) | JP6213527B2 (ja) |
CN (1) | CN107709950B (ja) |
DE (1) | DE112016003014B4 (ja) |
WO (1) | WO2017002306A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018141743A (ja) * | 2017-02-28 | 2018-09-13 | 株式会社デンソー | 物理量センサ |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106020559B (zh) * | 2016-06-30 | 2018-05-29 | 华为技术有限公司 | 压力感应检测装置、电子设备与触摸显示屏 |
DE102019008761A1 (de) * | 2019-12-14 | 2021-06-17 | PRlGNlTZ Mikrosystemtechnik GmbH | Drucksensor mit einer Membran mit Sensorchips mit Messbrücken mit Sensorelementen |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1344758A (en) * | 1971-07-01 | 1974-01-23 | Millar Instruments | Pressure transducers |
JPS63248180A (ja) * | 1987-04-03 | 1988-10-14 | Seiko Instr & Electronics Ltd | 半導体感圧装置 |
JPH04258176A (ja) * | 1991-02-12 | 1992-09-14 | Mitsubishi Electric Corp | 半導体圧力センサ |
JP3891037B2 (ja) * | 2002-05-21 | 2007-03-07 | 株式会社デンソー | 半導体圧力センサおよび半導体圧力センサ用の半導体ウェハ |
KR20070116097A (ko) * | 2005-03-16 | 2007-12-06 | 야마하 가부시키가이샤 | 반도체 장치, 반도체 장치의 제조 방법, 및 덮개 프레임 |
WO2008041607A1 (fr) * | 2006-10-02 | 2008-04-10 | Panasonic Electric Works Co., Ltd. | Capteur de pression |
JP4916006B2 (ja) * | 2007-02-28 | 2012-04-11 | 株式会社山武 | 圧力センサ |
JP5157797B2 (ja) | 2008-10-01 | 2013-03-06 | 株式会社デンソー | 圧力センサ |
JP5287806B2 (ja) | 2010-08-20 | 2013-09-11 | 株式会社デンソー | 半導体圧力センサ |
JPWO2012124282A1 (ja) * | 2011-03-11 | 2014-07-17 | パナソニック株式会社 | センサ |
JP5454628B2 (ja) | 2012-06-29 | 2014-03-26 | 株式会社デンソー | 圧力センサ |
JP2014102225A (ja) * | 2012-11-22 | 2014-06-05 | Denso Corp | 物理量センサおよびその製造方法 |
JP5783297B2 (ja) * | 2013-08-06 | 2015-09-24 | 株式会社デンソー | 力学量センサ |
JP6965540B2 (ja) * | 2017-03-27 | 2021-11-10 | セイコーエプソン株式会社 | 圧電デバイス、memsデバイス、液体噴射ヘッド、及び、液体噴射装置 |
-
2015
- 2015-06-30 JP JP2015130931A patent/JP6213527B2/ja active Active
-
2016
- 2016-06-02 CN CN201680038124.6A patent/CN107709950B/zh active Active
- 2016-06-02 DE DE112016003014.2T patent/DE112016003014B4/de active Active
- 2016-06-02 WO PCT/JP2016/002679 patent/WO2017002306A1/ja active Application Filing
- 2016-06-02 US US15/738,431 patent/US10527513B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018141743A (ja) * | 2017-02-28 | 2018-09-13 | 株式会社デンソー | 物理量センサ |
Also Published As
Publication number | Publication date |
---|---|
DE112016003014T5 (de) | 2018-03-15 |
CN107709950B (zh) | 2019-12-03 |
US10527513B2 (en) | 2020-01-07 |
US20180195922A1 (en) | 2018-07-12 |
JP2017015484A (ja) | 2017-01-19 |
CN107709950A (zh) | 2018-02-16 |
DE112016003014B4 (de) | 2024-06-27 |
WO2017002306A1 (ja) | 2017-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4940786B2 (ja) | 圧力センサ | |
JP6130598B2 (ja) | 力学量測定装置およびそれを用いた圧力センサ | |
JP5630088B2 (ja) | ピエゾ抵抗式圧力センサ | |
KR101953454B1 (ko) | 압력 센서 칩 | |
JP4739164B2 (ja) | 車両用エンジンの吸入空気圧力測定用の半導体感歪センサ | |
JP6213527B2 (ja) | 圧力センサ | |
JP5853169B2 (ja) | 半導体圧力センサ | |
JP5220866B2 (ja) | 半導体圧力センサ | |
JP2009300197A (ja) | 半導体圧力センサ | |
JP5866496B2 (ja) | 半導体圧力センサ | |
JP5492834B2 (ja) | 熱式流量計 | |
JP5899939B2 (ja) | 半導体圧力センサ、及び、その製造方法 | |
JPH10170367A (ja) | 半導体式圧力センサ | |
JP6218330B2 (ja) | 圧力センサ及びその製造方法 | |
JP5445384B2 (ja) | 空気流量測定装置 | |
JP2018072311A (ja) | 圧力センサ | |
JP2006003100A (ja) | ピエゾ抵抗型圧力センサ | |
JP6589810B2 (ja) | 圧力センサ | |
JP5287806B2 (ja) | 半導体圧力センサ | |
JP5949573B2 (ja) | 物理量センサの製造方法 | |
JP7406947B2 (ja) | センサチップ | |
JP6431505B2 (ja) | 半導体圧力センサ | |
JP2014070962A (ja) | 圧力センサ素子 | |
JP2016053508A (ja) | 圧力センサ | |
JP4654344B2 (ja) | ガスレートセンサの検出部構造 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170511 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170606 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170803 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170822 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170904 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6213527 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |