JP6171108B2 - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 44
- 239000000758 substrate Substances 0.000 claims description 88
- 238000005530 etching Methods 0.000 claims description 80
- 239000010408 film Substances 0.000 claims description 77
- 238000000151 deposition Methods 0.000 claims description 71
- 230000008021 deposition Effects 0.000 claims description 69
- 238000004544 sputter deposition Methods 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 15
- 230000002265 prevention Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005137 deposition process Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 150000002736 metal compounds Chemical class 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Description
Claims (9)
- ターゲットが配置される真空チャンバと、真空チャンバ内で基板を保持するステージと、ターゲットに所定の電力を投入する第1電源と、ステージに交流電力を投入する第2電源とを備え、第1電源によりターゲットに電力投入してターゲットをスパッタリングする成膜処理と、第2電源によりステージに交流電力を投入して基板に成膜された薄膜をエッチングするエッチング処理とを行う成膜装置であって、ステージの周囲を囲う防着板が配置されるものにおいて、
ステージで保持される基板の成膜面側を上とし、基板に近接する防着板の部分が基板上面と同等の平面上に位置する、前記成膜処理を行う成膜位置と、この防着板の部分が基板上面から上方に位置する、前記エッチング処理を行うエッチング位置と、前記防着板の部分が前記エッチング位置よりも更に上方に位置する、基板搬送持の搬送位置との間で防着板を上下動する駆動手段を備えることを特徴とする成膜装置。 - 前記防着板の基板に近接する部分に、下方にのびる突条を設けたことを特徴とする請求項1記載の成膜装置。
- 前記突条の高さは、前記成膜位置と前記エッチング位置との間の距離と同等以上に設定されることを特徴とする請求項2記載の成膜装置。
- 前記突条の高さは10〜30mmの範囲に設定されることを特徴とする請求項2または請求項3記載の成膜装置。
- 前記防着板の下方に配置される第2防着板と、第2防着板の上端部が基板よりも下方に位置する成膜位置と、この上端部がエッチング位置に移動した前記防着板の基板に近接するエッチング位置との間で第2防着板を上下動する第2駆動手段とを更に備えることを特徴とする請求項1記載の成膜装置。
- 真空チャンバに上下一対のコイルが設けられ、第2電源によりステージに交流電力を投入したときに発生するプラズマを上下方向で挟むように真空チャンバに対して上下一対のコイルが位置決めされていることを特徴とする請求項1〜5のいずれか1項記載の成膜装置。
- 真空チャンバ内のステージにより基板を保持し、ステージの周囲を囲うように防着板を配置し、真空チャンバ内のターゲットに所定の電力を投入してスパッタリングする成膜工程と、ターゲットへの電力投入を停止し、ステージに交流電力を投入して基板に成膜された薄膜をエッチングするエッチング工程とを含む成膜方法において、
ステージで保持される基板の成膜面側を上とし、前記成膜工程にて基板に近接する防着板の部分が基板上面と同等の平面上に位置する成膜位置に防着板を移動させ、前記エッチング工程にてこの防着板の部分が基板上面から上方に位置する、成膜位置とは異なるエッチング位置に防着板を移動させ、基板をステージに受け渡す搬送時に前記防着板の部分が前記エッチング位置よりも更に上方に位置するように防着板を移動させることを特徴とする成膜方法。 - 前記エッチング位置は前記成膜位置よりも10〜30mm上方に位置することを特徴とする請求項7記載の成膜方法。
- 前記成膜工程にて基板上面よりも下方に第2防着板が配置され、前記エッチング工程にて前記第2防着板を上方に移動させ、前記エッチング工程で薄膜から飛散する粒子が、前記防着板の基板に近接する部分と基板との間を通過して真空チャンバ内面に付着することを防止するようにしたことを特徴とする請求項7または8記載の成膜方法。
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