JP5461690B2 - スパッタリング装置及びスパッタリング方法 - Google Patents
スパッタリング装置及びスパッタリング方法 Download PDFInfo
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- JP5461690B2 JP5461690B2 JP2012509294A JP2012509294A JP5461690B2 JP 5461690 B2 JP5461690 B2 JP 5461690B2 JP 2012509294 A JP2012509294 A JP 2012509294A JP 2012509294 A JP2012509294 A JP 2012509294A JP 5461690 B2 JP5461690 B2 JP 5461690B2
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- 238000004544 sputter deposition Methods 0.000 title claims description 86
- 239000000758 substrate Substances 0.000 claims description 94
- 239000010409 thin film Substances 0.000 claims description 10
- 230000003247 decreasing effect Effects 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 57
- 239000007789 gas Substances 0.000 description 55
- 235000012431 wafers Nutrition 0.000 description 42
- 230000015572 biosynthetic process Effects 0.000 description 26
- 150000002500 ions Chemical class 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 argon ions Chemical class 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (3)
- ターゲットが配置される真空チャンバと、このターゲットに電力投入する電源と、真空チャンバ内に所定のスパッタガスを導入するガス導入手段と、真空チャンバ内を真空排気する排気手段と、真空チャンバ内で処理すべき基板を保持する基板保持手段と、を備え、 基板保持手段が、正負の電極とを有するチャック本体と、基板の外周縁部が面接触可能なリブ部及び前記リブ部で囲繞された内部空間に所定の間隔を存して立設された複数個の支持部を有する誘電体たるチャックプレートと、両電極間に直流電圧を印加する直流電源と、チャックプレートの静電容量を通る交流電流を流す交流電源及びそのときの交流電流を測定する測定手段とを有し、ガス導入手段により真空チャンバ内に所定のガスを導入し、ターゲットに電力投入してこのターゲットをスパッタリングし、基板表面に所定の薄膜を形成するとき、測定手段により測定した交流電流値が所定値に保持されるように、真空チャンバ内の圧力を制御する制御手段を更に備えることを特徴とするスパッタリング装置。
- 前記制御手段は、ガス導入手段によるガス導入量または排気手段の排気速度を増減させて真空チャンバ内の圧力を制御することを特徴とする請求項1記載のスパッタリング装置。
- 前記基板保持手段にて保持された基板に対してバイアス電力を投入する電源を更に備え、ガス導入手段により真空チャンバ内に所定のガスを導入し、ターゲットに電力投入してこのターゲットをスパッタリングし、基板にバイアス電圧を投入しながら基板表面に所定の薄膜を形成するとき、測定手段により測定した交流電流値が所定値に保持されるように、前記制御手段は、バイアス電力を優先的に制御することを特徴とする請求項1または2記載のスパッタリング装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012509294A JP5461690B2 (ja) | 2010-04-02 | 2011-03-16 | スパッタリング装置及びスパッタリング方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010086063 | 2010-04-02 | ||
JP2010086063 | 2010-04-02 | ||
PCT/JP2011/001554 WO2011125292A1 (ja) | 2010-04-02 | 2011-03-16 | スパッタリング装置及びスパッタリング方法 |
JP2012509294A JP5461690B2 (ja) | 2010-04-02 | 2011-03-16 | スパッタリング装置及びスパッタリング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011125292A1 JPWO2011125292A1 (ja) | 2013-07-08 |
JP5461690B2 true JP5461690B2 (ja) | 2014-04-02 |
Family
ID=44762263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012509294A Active JP5461690B2 (ja) | 2010-04-02 | 2011-03-16 | スパッタリング装置及びスパッタリング方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9209001B2 (ja) |
JP (1) | JP5461690B2 (ja) |
KR (1) | KR101438129B1 (ja) |
CN (1) | CN102822380B (ja) |
SG (1) | SG183904A1 (ja) |
TW (1) | TWI564412B (ja) |
WO (1) | WO2011125292A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111065864B (zh) * | 2017-09-28 | 2021-06-15 | 日产自动车株式会社 | 排水软管及排水软管的连接方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103966557B (zh) * | 2013-02-05 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Ito薄膜溅射工艺方法及ito薄膜溅射设备 |
KR102216692B1 (ko) * | 2013-11-27 | 2021-02-18 | 주식회사 에이치앤이루자 | 정전 척을 구비하는 스퍼터링 장치 |
KR102490641B1 (ko) * | 2015-11-25 | 2023-01-20 | 삼성디스플레이 주식회사 | 증착 장치 및 증착 방법 |
US11094515B2 (en) | 2016-12-19 | 2021-08-17 | Panasonic Intellectual Property Management Co., Ltd. | Sputtering apparatus and sputtering method |
US11257702B2 (en) | 2018-06-28 | 2022-02-22 | Ulvac Techno, Ltd. | Power supply apparatus for electrostatic chuck and substrate control method |
JP7057430B2 (ja) * | 2018-09-27 | 2022-04-19 | 株式会社アルバック | マグネトロンスパッタリング装置用の磁石ユニット |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01321136A (ja) * | 1988-06-24 | 1989-12-27 | Fujitsu Ltd | 静電チャックの劣化検出回路 |
JPH07130827A (ja) * | 1993-11-04 | 1995-05-19 | Hitachi Ltd | ウエーハ静電吸着装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5542559A (en) * | 1993-02-16 | 1996-08-06 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
US5576629A (en) * | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
US5812361A (en) | 1996-03-29 | 1998-09-22 | Lam Research Corporation | Dynamic feedback electrostatic wafer chuck |
US6291999B1 (en) * | 1997-09-30 | 2001-09-18 | Daihen Corp. | Plasma monitoring apparatus |
US6478924B1 (en) * | 2000-03-07 | 2002-11-12 | Applied Materials, Inc. | Plasma chamber support having dual electrodes |
JP4703828B2 (ja) * | 2000-09-07 | 2011-06-15 | 株式会社アルバック | スパッタリング装置及び薄膜製造方法 |
-
2011
- 2011-03-16 CN CN201180016926.4A patent/CN102822380B/zh active Active
- 2011-03-16 JP JP2012509294A patent/JP5461690B2/ja active Active
- 2011-03-16 SG SG2012065553A patent/SG183904A1/en unknown
- 2011-03-16 WO PCT/JP2011/001554 patent/WO2011125292A1/ja active Application Filing
- 2011-03-16 KR KR1020127028826A patent/KR101438129B1/ko active IP Right Grant
- 2011-03-16 US US13/634,328 patent/US9209001B2/en active Active
- 2011-03-30 TW TW100110992A patent/TWI564412B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01321136A (ja) * | 1988-06-24 | 1989-12-27 | Fujitsu Ltd | 静電チャックの劣化検出回路 |
JPH07130827A (ja) * | 1993-11-04 | 1995-05-19 | Hitachi Ltd | ウエーハ静電吸着装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111065864B (zh) * | 2017-09-28 | 2021-06-15 | 日产自动车株式会社 | 排水软管及排水软管的连接方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2011125292A1 (ja) | 2013-07-08 |
CN102822380B (zh) | 2014-08-13 |
US9209001B2 (en) | 2015-12-08 |
TWI564412B (zh) | 2017-01-01 |
CN102822380A (zh) | 2012-12-12 |
KR20120137426A (ko) | 2012-12-20 |
WO2011125292A1 (ja) | 2011-10-13 |
SG183904A1 (en) | 2012-10-30 |
TW201213574A (en) | 2012-04-01 |
KR101438129B1 (ko) | 2014-09-05 |
US20130001075A1 (en) | 2013-01-03 |
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