JP6160893B1 - レジスト剥離液 - Google Patents
レジスト剥離液 Download PDFInfo
- Publication number
- JP6160893B1 JP6160893B1 JP2017523005A JP2017523005A JP6160893B1 JP 6160893 B1 JP6160893 B1 JP 6160893B1 JP 2017523005 A JP2017523005 A JP 2017523005A JP 2017523005 A JP2017523005 A JP 2017523005A JP 6160893 B1 JP6160893 B1 JP 6160893B1
- Authority
- JP
- Japan
- Prior art keywords
- mass
- water
- hydrazine
- resist
- stripping solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 205
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 135
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims abstract description 97
- 239000002798 polar solvent Substances 0.000 claims abstract description 55
- 239000000654 additive Substances 0.000 claims abstract description 16
- 230000000996 additive effect Effects 0.000 claims abstract description 16
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 64
- 150000003335 secondary amines Chemical class 0.000 claims description 52
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 125000000467 secondary amino group Chemical class [H]N([*:1])[*:2] 0.000 abstract 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine hydrate Chemical compound O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 192
- 239000000203 mixture Substances 0.000 description 101
- 230000000052 comparative effect Effects 0.000 description 93
- 239000010408 film Substances 0.000 description 74
- 239000000243 solution Substances 0.000 description 73
- 239000010949 copper Substances 0.000 description 56
- 239000003638 chemical reducing agent Substances 0.000 description 36
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 28
- 238000011156 evaluation Methods 0.000 description 20
- 150000001412 amines Chemical class 0.000 description 18
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- -1 DNQ compound Chemical class 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 229940068918 polyethylene glycol 400 Drugs 0.000 description 6
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 6
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 5
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 5
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 5
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 4
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 4
- 229940105990 diglycerin Drugs 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 150000003141 primary amines Chemical class 0.000 description 4
- 229940081974 saccharin Drugs 0.000 description 4
- 235000019204 saccharin Nutrition 0.000 description 4
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 4
- 239000000600 sorbitol Substances 0.000 description 4
- 150000003512 tertiary amines Chemical class 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- 229920002565 Polyethylene Glycol 400 Polymers 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- GEWWCWZGHNIUBW-UHFFFAOYSA-N 1-(4-nitrophenyl)propan-2-one Chemical compound CC(=O)CC1=CC=C([N+]([O-])=O)C=C1 GEWWCWZGHNIUBW-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- JYYOBHFYCIDXHH-UHFFFAOYSA-N carbonic acid;hydrate Chemical compound O.OC(O)=O JYYOBHFYCIDXHH-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- IYWCBYFJFZCCGV-UHFFFAOYSA-N formamide;hydrate Chemical compound O.NC=O IYWCBYFJFZCCGV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- WHQSYGRFZMUQGQ-UHFFFAOYSA-N n,n-dimethylformamide;hydrate Chemical compound O.CN(C)C=O WHQSYGRFZMUQGQ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000005846 sugar alcohols Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106133105A TWI629353B (zh) | 2016-09-30 | 2017-09-27 | Receptor stripping solution |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/004436 WO2018061064A1 (ja) | 2016-09-30 | 2016-09-30 | レジスト剥離液 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6160893B1 true JP6160893B1 (ja) | 2017-07-12 |
JPWO2018061064A1 JPWO2018061064A1 (ja) | 2018-10-04 |
Family
ID=59308856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017523005A Active JP6160893B1 (ja) | 2016-09-30 | 2016-09-30 | レジスト剥離液 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6160893B1 (zh) |
CN (1) | CN107995960B (zh) |
TW (1) | TWI629353B (zh) |
WO (1) | WO2018061064A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6692029B1 (ja) * | 2019-03-25 | 2020-05-13 | パナソニックIpマネジメント株式会社 | レジスト剥離液 |
JP6823821B1 (ja) * | 2019-11-20 | 2021-02-03 | パナソニックIpマネジメント株式会社 | レジスト剥離液 |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3828513A1 (de) * | 1988-08-23 | 1990-03-01 | Merck Patent Gmbh | Abloesemittel fuer fotoresists |
JPH06298974A (ja) * | 1993-04-14 | 1994-10-25 | Mitsui Toatsu Chem Inc | ポリイミド樹脂のエッチング方法 |
JPH0887117A (ja) * | 1994-09-16 | 1996-04-02 | Tokyo Ohka Kogyo Co Ltd | レジスト用剥離液組成物 |
JPH08334905A (ja) * | 1995-06-08 | 1996-12-17 | Tokyo Ohka Kogyo Co Ltd | レジスト用剥離液組成物 |
JPH0996911A (ja) * | 1995-09-29 | 1997-04-08 | Tokyo Ohka Kogyo Co Ltd | レジスト用剥離液組成物 |
JPH09311467A (ja) * | 1996-05-21 | 1997-12-02 | Nitto Denko Corp | レジスト剥離剤 |
JPH10239865A (ja) * | 1997-02-24 | 1998-09-11 | Jsr Corp | ネガ型フォトレジスト用剥離液組成物 |
JP2000056480A (ja) * | 1998-08-10 | 2000-02-25 | Tokyo Ohka Kogyo Co Ltd | レジスト用剥離液組成物およびこれを用いたレジスト剥離方法 |
JP2001022096A (ja) * | 1999-07-02 | 2001-01-26 | Nippon Zeon Co Ltd | ポジ型レジスト用剥離液 |
JP2001022095A (ja) * | 1999-07-02 | 2001-01-26 | Nippon Zeon Co Ltd | ポジ型レジスト用剥離液 |
WO2001021750A1 (fr) * | 1999-09-24 | 2001-03-29 | Tokuyama Corporation | Detergent |
JP2002162754A (ja) * | 2000-11-28 | 2002-06-07 | Nippon Zeon Co Ltd | レジスト用剥離液とその利用 |
JP2003068699A (ja) * | 2001-08-23 | 2003-03-07 | Showa Denko Kk | サイドウォール除去液 |
JP2003255565A (ja) * | 2001-12-27 | 2003-09-10 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液 |
JP2004045774A (ja) * | 2002-07-11 | 2004-02-12 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
WO2016101333A1 (zh) * | 2014-12-23 | 2016-06-30 | 郑玢 | 一种光阻残留物清洗液 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4810764B2 (ja) * | 2001-06-29 | 2011-11-09 | 三菱瓦斯化学株式会社 | レジスト剥離剤組成物 |
KR100718527B1 (ko) * | 2006-04-12 | 2007-05-16 | 테크노세미켐 주식회사 | 네거티브 포토레지스트용 박리액 조성물 |
JP4716225B2 (ja) * | 2007-05-15 | 2011-07-06 | ナガセケムテックス株式会社 | フォトレジスト剥離剤組成物 |
JP5575318B1 (ja) * | 2013-09-02 | 2014-08-20 | パナソニック株式会社 | レジスト剥離液 |
JP6277511B2 (ja) * | 2013-10-18 | 2018-02-14 | パナソニックIpマネジメント株式会社 | レジスト剥離液 |
-
2016
- 2016-09-30 CN CN201680034620.4A patent/CN107995960B/zh active Active
- 2016-09-30 JP JP2017523005A patent/JP6160893B1/ja active Active
- 2016-09-30 WO PCT/JP2016/004436 patent/WO2018061064A1/ja active Application Filing
-
2017
- 2017-09-27 TW TW106133105A patent/TWI629353B/zh active
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3828513A1 (de) * | 1988-08-23 | 1990-03-01 | Merck Patent Gmbh | Abloesemittel fuer fotoresists |
JPH06298974A (ja) * | 1993-04-14 | 1994-10-25 | Mitsui Toatsu Chem Inc | ポリイミド樹脂のエッチング方法 |
JPH0887117A (ja) * | 1994-09-16 | 1996-04-02 | Tokyo Ohka Kogyo Co Ltd | レジスト用剥離液組成物 |
JPH08334905A (ja) * | 1995-06-08 | 1996-12-17 | Tokyo Ohka Kogyo Co Ltd | レジスト用剥離液組成物 |
JPH0996911A (ja) * | 1995-09-29 | 1997-04-08 | Tokyo Ohka Kogyo Co Ltd | レジスト用剥離液組成物 |
JPH09311467A (ja) * | 1996-05-21 | 1997-12-02 | Nitto Denko Corp | レジスト剥離剤 |
JPH10239865A (ja) * | 1997-02-24 | 1998-09-11 | Jsr Corp | ネガ型フォトレジスト用剥離液組成物 |
JP2000056480A (ja) * | 1998-08-10 | 2000-02-25 | Tokyo Ohka Kogyo Co Ltd | レジスト用剥離液組成物およびこれを用いたレジスト剥離方法 |
JP2001022096A (ja) * | 1999-07-02 | 2001-01-26 | Nippon Zeon Co Ltd | ポジ型レジスト用剥離液 |
JP2001022095A (ja) * | 1999-07-02 | 2001-01-26 | Nippon Zeon Co Ltd | ポジ型レジスト用剥離液 |
WO2001021750A1 (fr) * | 1999-09-24 | 2001-03-29 | Tokuyama Corporation | Detergent |
JP2002162754A (ja) * | 2000-11-28 | 2002-06-07 | Nippon Zeon Co Ltd | レジスト用剥離液とその利用 |
JP2003068699A (ja) * | 2001-08-23 | 2003-03-07 | Showa Denko Kk | サイドウォール除去液 |
JP2003255565A (ja) * | 2001-12-27 | 2003-09-10 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液 |
JP2004045774A (ja) * | 2002-07-11 | 2004-02-12 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
WO2016101333A1 (zh) * | 2014-12-23 | 2016-06-30 | 郑玢 | 一种光阻残留物清洗液 |
Also Published As
Publication number | Publication date |
---|---|
TWI629353B (zh) | 2018-07-11 |
CN107995960B (zh) | 2019-03-12 |
JPWO2018061064A1 (ja) | 2018-10-04 |
CN107995960A (zh) | 2018-05-04 |
TW201814036A (zh) | 2018-04-16 |
WO2018061064A1 (ja) | 2018-04-05 |
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