JP6138814B2 - 発光装置および発光装置の製造方法 - Google Patents
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- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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Description
本発明の一実施形態について説明する。
本発明の他の実施形態について説明する。なお、説明の便宜上、実施形態1で説明した部材と同じ機能を有する部材については同じ符号を付し、その説明を省略する。
本発明のさらに他の実施形態について説明する。なお、説明の便宜上、実施形態1で説明した部材と同じ機能を有する部材については同じ符号を付し、その説明を省略する。
100 基板
110 発光素子
130 光反射樹脂枠
140 封止樹脂
150 セラミック絶縁膜
150a 高光反射性セラミック層(第2セラミック層)
150b 高熱伝導性セラミック層(第1セラミック層)
150c 銀層(金属層)
160 アノード用導電体配線(配線)
165 カソード用導電体配線(配線)
170 アノード電極(電極部)
180 カソード電極(電極部)205 雄ネジ(ネジ部)
Claims (6)
- 金属材料からなる基板と、
上記基板の一方の面上に形成された、セラミック塗料からなる第1セラミック層と、
上記第1セラミック層上に形成された、セラミック塗料からなる第2セラミック層と、
上記第2セラミック層上に配置された発光素子と、
上記第2セラミック層上に形成され、かつ上記発光素子が配置されている領域を取り囲むように形成された光反射性を有する樹脂からなる枠部と、
上記第2セラミック層上に形成され、かつ上記枠部によって囲まれる領域に配置された部材を封止する封止樹脂と、
上記枠部の外側に配置され、かつ上記第2セラミック層上に形成され、かつこの発光装置を外部配線または外部装置に接続するための電極部と、
上記第2セラミック層上に形成され、かつ上記発光素子と上記電極部とを電気的に接続するための配線とを備え、
上記第1セラミック層は、熱伝導性と電気的絶縁性とを有し、
上記第2セラミック層は、光反射性と電気的絶縁性とを有しており、
上記第1セラミック層および上記第2セラミック層は、それぞれ単層であり、
上記第1セラミック層の厚さは、10μm以上65μm以下であり、
上記第2セラミック層の厚さは、10μm以上65μm以下であり、
上記第1セラミック層の厚さと上記第2セラミック層の厚さとは異なっており、
上記光反射性よりも上記熱伝導性を優先させる場合、上記第1セラミック層の厚さが上記第2セラミック層の厚さよりも厚く、上記熱伝導性よりも上記光反射性を優先させる場合、上記第2セラミック層の厚さが上記第1セラミック層の厚さよりも厚いことを特徴とする発光装置。 - 上記第1セラミック層および上記第2セラミック層は、上記基板における一方の面に形成されており、
上記基板における他方の面に、当該発光装置を他の装置に取り付けるためのネジ部が形成されていることを特徴とする請求項1に記載の発光装置。 - 上記基板を基板面法線方向から見たときの外形形状が、多角形状、または少なくとも一つの直線部分を有する形状であることを特徴とする請求項1に記載の発光装置。
- 上記第2セラミック層の光反射率は、上記基板の光反射率よりも高いことを特徴とする請求項1に記載の発光装置。
- 金属材料からなる基板の一方の面上にセラミック塗料を塗布することによって第1セラミック層を形成する工程と、
上記第1セラミック層上にセラミック塗料を塗布することによって第2セラミック層を形成する工程と、
上記第2セラミック層上に発光素子を配置する工程と、
上記第2セラミック層上に、上記発光素子が配置されている領域を取り囲むように、光反射性を有する樹脂から枠部を形成する工程と、
上記第2セラミック層上に、上記枠部によって囲まれる領域に配置された部材を封止する封止樹脂を形成する工程と、
上記枠部の外側に、かつ上記第2セラミック層上に、この発光装置を外部配線または外部装置に接続するための電極部を形成する工程と、
上記第2セラミック層上に、上記発光素子と上記電極部とを電気的に接続するための配線を形成する工程と、を含み、
上記第1セラミック層は、熱伝導性と電気的絶縁性とを有し、
上記第2セラミック層は、光反射性と電気的絶縁性とを有しており、
上記第1セラミック層および上記第2セラミック層は、それぞれ単層であり、
上記第1セラミック層の厚さは、10μm以上65μm以下であり、
上記第2セラミック層の厚さは、10μm以上65μm以下であり、
上記第1セラミック層の厚さと上記第2セラミック層の厚さとは異なっており、
上記光反射性よりも上記熱伝導性を優先させる場合、上記第1セラミック層の厚さを上記第2セラミック層の厚さよりも厚く設定し、上記熱伝導性よりも上記光反射性を優先させる場合、上記第2セラミック層の厚さを上記第1セラミック層の厚さよりも厚く設定することを特徴とする発光装置の製造方法。 - 上記第2セラミック層の光反射率は、上記基板の光反射率よりも高いことを特徴とする請求項5に記載の発光装置の製造方法。
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JP2012235169 | 2012-10-24 | ||
JP2012235169 | 2012-10-24 | ||
PCT/JP2013/075872 WO2014065068A1 (ja) | 2012-10-24 | 2013-09-25 | 発光装置 |
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CN105359284B (zh) * | 2013-06-28 | 2019-05-14 | 西铁城时计株式会社 | Led装置 |
CN110612611B (zh) * | 2016-05-24 | 2022-10-11 | 西铁城电子株式会社 | Led照明装置及led照明装置的制造方法 |
JP6923808B2 (ja) * | 2018-06-22 | 2021-08-25 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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2013
- 2013-09-25 US US14/436,513 patent/US9859484B2/en active Active
- 2013-09-25 WO PCT/JP2013/075872 patent/WO2014065068A1/ja active Application Filing
- 2013-09-25 CN CN201380053640.2A patent/CN104718620B/zh not_active Expired - Fee Related
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CN104718620B (zh) | 2018-01-02 |
WO2014065068A1 (ja) | 2014-05-01 |
US20160172564A1 (en) | 2016-06-16 |
CN104718620A (zh) | 2015-06-17 |
JPWO2014065068A1 (ja) | 2016-09-08 |
US9859484B2 (en) | 2018-01-02 |
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