JP6131320B2 - 基板処理装置、プログラム及び半導体装置の製造方法 - Google Patents
基板処理装置、プログラム及び半導体装置の製造方法 Download PDFInfo
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Description
Claims (11)
- 基板を処理する複数の処理室と、
基板を収容する1つ又は複数の収納容器を載置する載置部と、
負圧下で基板を搬送する真空搬送機を有する真空搬送室と、
大気圧下で基板を搬送する大気搬送機を有する大気搬送室と、
前記大気搬送室と前記真空搬送室との間に設けられ、負圧状態と大気圧状態とを切り換え可能であって、前記複数の処理室から搬送された処理済み基板を冷却する冷却室と、
前記複数の処理室における、それぞれの基板処理の残時間であるレシピ残時間と、前記収納容器から基板を取出し前記真空搬送機に載置するまでの時間であるアプローチ時間とに基づき、前記大気搬送機が前記収納容器から基板を取出すタイミングを決定する制御部と、を備え、
前記制御部は、前記複数の処理室のうち、所定の処理室から前記処理済み基板を搬出した後、前記所定の処理室以外の処理室から前記処理済み基板を搬出する際に、前記所定の処理室以外の処理室における基板処理の残時間であるレシピ残時間と、前記冷却室における基板冷却の残時間である冷却残時間とに基づき、前記冷却室を大気圧から負圧にするよう制御する基板処理装置。 - 前記制御部は、前記所定の処理室から前記処理済み基板を搬出する際に、前記処理済み基板の搬出が終了するまで、前記大気搬送機が前記収納容器から未処理の基板を取出すタイミングを遅らせる請求項1記載の基板処理装置。
- 前記制御部は、前記レシピ残時間が前記アプローチ時間以下になると、前記大気搬送機が前記収納容器から基板を取出すように制御する請求項1記載の基板処理装置。
- 前記制御部は、前記レシピ残時間が前記冷却残時間以下になると、前記冷却室を大気圧から負圧にするよう制御する請求項1記載の基板処理装置。
- 前記制御部は、前記レシピ残時間と前記所定の処理室から処理済み基板を搬出するのに要する時間である処理済み基板搬出時間との合計時間である処理搬出時間と、前記冷却残時間と前記冷却室から冷却済み基板を搬出するのに要する時間である冷却済み基板搬出時間と前記冷却室を大気圧から負圧にするのに要する時間であるエバック時間との合計時間である冷却エバック時間とに基づき、前記冷却室を大気圧から負圧にするよう制御する請求項1記載の基板処理装置。
- 前記制御部は、前記処理搬出時間が前記冷却エバック時間以下になると、前記冷却室を大気圧から負圧にするよう制御する制御する請求項5記載の基板処理装置。
- 基板を処理する複数の処理室と、基板を収容する1つ又は複数の収納容器を載置する載置部と、負圧下で基板を搬送する真空搬送機を有する真空搬送室と、大気圧下で基板を搬送する大気搬送機を有する大気搬送室と、前記大気搬送室と前記真空搬送室との間に設けられ、前記処理室から搬送された処理済み基板を冷却する冷却室と、前記大気搬送室及び前記真空搬送室を介して前記基板を前記処理室に搬送する制御部を備えた基板処理装置で実行されるプログラムであって、
前記制御部に、
前記複数の処理室のうち、所定の処理室における基板処理の残時間であるレシピ残時間と、前記基板を前記真空搬送機に載置するまでの時間であるアプローチ時間とに基づき、前記大気搬送機が前記収納容器から基板を取出すタイミングを決定するタイミング決定工程と、
前記所定の処理室から処理済み基板を搬出した後、前記所定の処理室以外の処理室から処理済み基板を搬出する際に、前記所定の処理室以外の処理室における基板処理の残時間であるレシピ残時間と、前記冷却室における基板冷却の残時間である冷却残時間とに基づき、前記冷却室を大気圧から負圧にする冷却室減圧工程と、前記複数の処理室から搬出された処理済み基板を冷却する基板冷却工程と、を実行させるプログラム。 - 大気圧下で基板が搬送される大気搬送室と、負圧下で基板が搬送される真空搬送室と、前記大気搬送室と前記真空搬送室との間に設けられる冷却室と、をそれぞれ介し、前記基板を処理する複数の処理室へ前記基板を搬送する基板搬送工程と、前記複数の処理室において、前記基板に所定の処理を実施する基板処理工程と、前記複数の処理室における、それぞれの基板処理の残時間であるレシピ残時間と、前記基板を前記真空搬送室内で搬送する真空搬送機に載置するまでの時間であるアプローチ時間とに基づき、前記基板を前記大気搬送室内で搬送する大気搬送機が前記基板を搬送するタイミングを決定するタイミング決定工程と、
前記複数の処理室のうち所定の処理室から処理済み基板を搬出した後、前記所定の処理室以外の処理室から処理済み基板を搬出する際に、前記所定の処理室以外の処理室における基板処理の残時間であるレシピ残時間と、前記冷却室における基板冷却の残時間である冷却残時間とに基づき、前記冷却室を大気圧から負圧にする冷却室減圧工程と、前記複数の処理室から搬出された処理済み基板を冷却する基板冷却工程と、を有する半導体装置の製造方法。 - 基板を処理する複数の処理室と、
負圧下で基板が搬送される真空搬送室と、
大気圧下で基板が搬送される大気搬送室と、
前記大気搬送室と前記真空搬送室との間に設けられ、負圧状態と大気圧状態とを切り換え可能であって、前記複数の処理室から搬送された処理済み基板を冷却する冷却室と、
前記複数の処理室のうち、所定の処理室から前記処理済み基板を搬出した後、前記所定の処理室以外の処理室から前記処理済み基板を搬出する際に、前記所定の処理室以外の処理室における基板処理の残時間であるレシピ残時間と、前記冷却室における基板冷却の残時間である冷却残時間とに基づき、前記冷却室を大気圧から負圧にするよう制御する制御部と、を備えた基板処理装置。 - 基板を処理する複数の処理室と、負圧下で基板が搬送される真空搬送室と、大気圧下で基板が搬送される大気搬送室と、前記大気搬送室と前記真空搬送室との間に設けられ、前記処理室から搬送された処理済み基板を冷却する冷却室と、前記大気搬送室及び前記真空搬送室を介して前記基板を前記処理室に搬送する制御部を備えた基板処理装置で実行されるプログラムであって、
前記制御部に、
前記複数の処理室のうち、所定の処理室から処理済み基板を搬出した後、前記所定の処理室以外の処理室から処理済み基板を搬出する際に、前記所定の処理室以外の処理室における基板処理の残時間であるレシピ残時間と、前記冷却室における基板冷却の残時間である冷却残時間とに基づき、前記冷却室を大気圧から負圧にする冷却室減圧工程と、前記複数の処理室から搬出された処理済み基板を冷却する基板冷却工程と、を実行させるプログラム。 - 大気圧下で基板が搬送される大気搬送室と、負圧下で基板が搬送される真空搬送室と、前記大気搬送室と前記真空搬送室との間に設けられる冷却室と、をそれぞれ介し、前記基板を処理する複数の処理室へ前記基板を搬送する基板搬送工程と、前記複数の処理室において、前記基板に所定の処理を実施する基板処理工程と、
前記複数の処理室のうち所定の処理室から処理済み基板を搬出した後、前記所定の処理室以外の処理室から処理済み基板を搬出する際に、前記所定の処理室以外の処理室における基板処理の残時間であるレシピ残時間と、前記冷却室における基板冷却の残時間である冷却残時間とに基づき、前記冷却室を大気圧から負圧にする冷却室減圧工程と、前記複数の処理室から搬出された処理済み基板を冷却する基板冷却工程と、を有する半導体装置の製造方法。
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JP2018060823A (ja) * | 2015-02-17 | 2018-04-12 | 東京エレクトロン株式会社 | キャリア搬送装置及びキャリア搬送方法 |
JP6321708B2 (ja) * | 2016-03-17 | 2018-05-09 | ファナック株式会社 | 工作機械システムおよび開停止位置算出装置 |
CN107871194B (zh) * | 2016-09-28 | 2020-10-16 | 北京北方华创微电子装备有限公司 | 一种生产线设备的调度方法和装置 |
WO2018186451A1 (ja) * | 2017-04-06 | 2018-10-11 | 東京エレクトロン株式会社 | 基板処理装置および基板搬送方法 |
JP7011033B2 (ja) * | 2018-03-01 | 2022-01-26 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
US10636693B2 (en) * | 2018-09-11 | 2020-04-28 | Kawasaki Jukogyo Kabushiki Kaisha | Substrate transfer device and control method therefor |
CN114203574A (zh) * | 2020-09-17 | 2022-03-18 | 长鑫存储技术有限公司 | 清洗机台以及清洗方法 |
JP2022053047A (ja) * | 2020-09-24 | 2022-04-05 | 東京エレクトロン株式会社 | 搬送方法及び処理システム |
JP7289881B2 (ja) * | 2021-08-27 | 2023-06-12 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
WO2023091198A1 (en) * | 2021-11-19 | 2023-05-25 | Applied Materials, Inc. | Apparatus and methods for reducing substrate cool down time |
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JPH0230759A (ja) | 1988-07-19 | 1990-02-01 | Ulvac Corp | 真空処理装置 |
ES2090893T3 (es) | 1993-01-28 | 1996-10-16 | Applied Materials Inc | Aparato de tratamiento en vacio que tiene una capacidad de produccion mejorada. |
JPH11102951A (ja) * | 1997-09-25 | 1999-04-13 | Tokyo Electron Ltd | 処理装置 |
JP2001102424A (ja) | 1999-09-29 | 2001-04-13 | Hitachi Kokusai Electric Inc | マルチチャンバ型処理装置 |
JP2002237507A (ja) * | 2000-12-08 | 2002-08-23 | Tokyo Electron Ltd | 処理システム及び処理システムの被処理体の搬送方法 |
JP2003109995A (ja) | 2001-09-28 | 2003-04-11 | Hitachi Kokusai Electric Inc | 基板処理方法 |
JP2005136021A (ja) | 2003-10-29 | 2005-05-26 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP4568231B2 (ja) | 2003-12-01 | 2010-10-27 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP4884801B2 (ja) * | 2005-10-06 | 2012-02-29 | 東京エレクトロン株式会社 | 処理システム |
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