JP6108037B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6108037B2 JP6108037B2 JP2016537686A JP2016537686A JP6108037B2 JP 6108037 B2 JP6108037 B2 JP 6108037B2 JP 2016537686 A JP2016537686 A JP 2016537686A JP 2016537686 A JP2016537686 A JP 2016537686A JP 6108037 B2 JP6108037 B2 JP 6108037B2
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- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 28
- 229910018125 Al-Si Inorganic materials 0.000 claims description 24
- 229910018520 Al—Si Inorganic materials 0.000 claims description 24
- 230000001681 protective effect Effects 0.000 claims description 20
- 238000005224 laser annealing Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000000075 oxide glass Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Description
本発明の実施の形態1に係る半導体装置の製造方法について図面を参照しながら説明する。図1〜4は、本発明の実施の形態1に係る半導体装置の製造方法を示す断面図である。
図6は、本発明の実施の形態2に係る半導体装置の製造方法を示す断面図である。本実施の形態では、実施の形態1の酸化膜5の代わりに保護膜としてn型ドープドポリシリコン8を形成する。この場合、凹部4内のn型ドープドポリシリコン8がAl−Si膜6から凹部4を介してSi基板1にAlが拡散するのを防ぐため、実施の形態1と同様の効果を得ることができる。また、n型ドープドポリシリコン8はn型なので、Si基板1をp型に活性化させるAlに対してマージンがあり、凹部4でも通電できる。
図7は、本発明の実施の形態3に係る半導体装置の製造方法を示す断面図である。本実施の形態では、実施の形態1の酸化膜5の代わりに保護膜としてリン化酸化膜ガラス9を形成する。この場合でも実施の形態1と同様の効果を得ることができる。また、リン化酸化膜ガラス9はn型なので、実施の形態2と同様に、Si基板1をp型に活性化させるAlに対してマージンがあり、凹部4でも通電できる。
図8は、本発明の実施の形態4に係る半導体装置の製造方法を示す断面図である。本実施の形態では、実施の形態1の酸化膜5の代わりに保護膜としてシリサイド化しない単体メタル10(チタン)を形成する。凹部4内の単体メタル10はAlの拡散を防ぐバリアメタルとして作用するため、実施の形態1と同様の効果を得ることができる。また、単体メタル10はn型に対するオーミック性に優れている。
図9は、本発明の実施の形態5に係る半導体装置の製造方法を示す断面図である。本実施の形態では、n型層3を形成した後に裏面上と凹部4内に金属膜(チタン、コバルト、タングステン、モリブデン)を形成する。その後に、アニールを施すことによって、金属シリサイド11(チタンシリサイド、コバルトシリサイド、タングステンシリサイド、モリブデンシリサイド)を形成する。次に、スパッタエッチングにより凹部4内の金属シリサイド11を残しつつ裏面上の金属シリサイド11を除去する。その後、実施の形態1と同様にAl−Si膜6と金属電極7を形成する。
図10,11は、本発明の実施の形態6に係る半導体装置の製造方法を示す断面図である。まず、実施の形態1の図1と同様にn−型のSi基板1の表面にp型不純物を注入してp型層2を形成し、裏面にn型不純物を注入してn型層3を形成する。Si基板1の裏面には凹部4が形成されている。次に、図10に示すように、裏面にレーザーアニールを施して凹部4を残したままで裏面を再結晶化し、n型層3を再形成する。次に、図11に示すように、裏面上にAl−Si膜6を形成する。Al−Si膜6上に金属電極7を形成する。
Claims (7)
- 凹部が形成された裏面を有するSi基板の前記裏面にn型不純物を注入してn型層を形成する工程と、
前記n型層を形成した後に前記裏面上と前記凹部内に保護膜を形成する工程と、
前記凹部内の前記保護膜を残しつつ前記裏面上の前記保護膜を除去する工程と、
前記保護膜を除去した後に前記裏面上にAl−Si膜を形成する工程と、
前記Al−Si膜上に金属電極を形成する工程とを備え、
前記凹部内の前記保護膜は、前記Al−Si膜から前記凹部を介して前記Si基板にAlが拡散するのを防ぐことを特徴とする半導体装置の製造方法。 - 前記保護膜は酸化膜であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記保護膜はn型ドープドポリシリコン又はリン化酸化膜ガラスであることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記保護膜はシリサイド化しない金属であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記保護膜は金属シリサイドであることを特徴とする請求項1に記載の半導体装置の製造方法。
- 凹部が形成された裏面を有するSi基板の前記裏面にn型不純物を注入してn型層を形成する工程と、
前記裏面にレーザーアニールを施して前記凹部を残したままで前記裏面を再結晶化し、前記n型層を再形成する工程と、
前記レーザーアニールの後に前記裏面上にAl−Si膜を形成する工程と、
前記Al−Si膜上に金属電極を形成する工程とを備えることを特徴とする半導体装置の製造方法。 - 前記レーザーアニールを前記凹部に選択的に施すことを特徴とする請求項6に記載の半導体装置の製造方法。
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