JP6054014B2 - 疑似ダイオードを有するiii族窒化物スイッチングデバイス - Google Patents
疑似ダイオードを有するiii族窒化物スイッチングデバイス Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 230000036039 immunity Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- -1 InN Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Description
[定義]
本発明において、“III族窒化物”とは、窒素と少なくとも1つのIII族元素とを有する化合物半導体、例えば、GaN、AlGaN、InN、AlN、InGaN、InAlGaN等であるが、これらに限定されるものではない。
Claims (12)
- ドライバ回路によりスイッチングされる高しきい値のIII族窒化物トランジスタと、
この高しきい値のIII族窒化物トランジスタの両端間に結合された低しきい値のIII族窒化物ダイオード接続トランジスタであって、前記低しきい値のIII族窒化物ダイオード接続トランジスタのゲート及びソースが、実質的に零抵抗を有する相互接続金属を用いて互いに短絡された、低しきい値のIII族窒化物ダイオード接続トランジスタと
を具えるIII族窒化物スイッチングデバイスであって、
前記高しきい値のIII族窒化物トランジスタにより、順方向モードで前記III族窒化物スイッチングデバイスに対する雑音排除性が得られ、
前記低しきい値のIII族窒化物ダイオード接続トランジスタが、逆方向モードで前記III族窒化物スイッチングデバイスを保護するための並列ダイオードとして機能するようになっており、
前記高しきい値のIII族窒化物トランジスタは、前記低しきい値のIII族窒化物ダイオード接続トランジスタの低しきい値の4倍超の高しきい値を有し、
前記III族窒化物スイッチングデバイスは、エンハンスメントモード(Eモード)GaN‐HEMTとデプレッションモード(Dモード)GaN‐HEMTとの組み合わせを有する、III族窒化物スイッチングデバイス。 - 請求項1に記載のIII族窒化物スイッチングデバイスにおいて、前記高しきい値のIII族窒化物トランジスタがエンハンスメントモードのGaN‐HEMTを有しているIII族窒化物スイッチングデバイス。
- 請求項1に記載のIII族窒化物スイッチングデバイスにおいて、前記低しきい値のIII族窒化物ダイオード接続トランジスタがエンハンスメントモードのGaN‐HEMTを有しているIII族窒化物スイッチングデバイス。
- 請求項1に記載のIII族窒化物スイッチングデバイスにおいて、このIII族窒化物スイッチングデバイスは、ハーフブリッジ回路におけるスイッチとして用いられているIII族窒化物スイッチングデバイス。
- 請求項1に記載のIII族窒化物スイッチングデバイスにおいて、前記ドライバ回路は、前記高しきい値のIII族窒化物トランジスタをほぼ0及び12ボルト間の電圧によりスイッチングするようになっており、前記高しきい値のIII族窒化物トランジスタのドレイン及びソース間の電圧はほぼ40ボルト及び600ボルト間となるようにしてあるIII族窒化物スイッチングデバイス。
- 基板上に形成された高しきい値のGaNトランジスタと、
基板上に形成された低しきい値のGaNダイオード接続トランジスタと
を具えるGaNスイッチングデバイスであって、
前記低しきい値のGaNダイオード接続トランジスタのゲート及びソースが、実質的に零抵抗を有する相互接続金属を用いて互いに短絡され、この低しきい値のGaNダイオード接続トランジスタが並列ダイオードとして機能するようになっており、
前記高しきい値のGaNトランジスタのドレインが前記低しきい値のGaNダイオード接続トランジスタのドレインに短絡され、前記高しきい値のGaNトランジスタのソースが前記低しきい値のGaNダイオード接続トランジスタのソースに短絡されており、
前記高しきい値のGaNトランジスタは、前記低しきい値のGaNダイオード接続トランジスタの低しきい値の4倍超の高しきい値を有し、
前記GaNスイッチングデバイスは、エンハンスメントモード(Eモード)GaN‐HEMTとデプレッションモード(Dモード)GaN‐HEMTとの組み合わせを有する、GaNスイッチングデバイス。 - 請求項6に記載のGaNスイッチングデバイスにおいて、前記高しきい値のGaNトランジスタにより、順方向モードで前記GaNスイッチングデバイスに対する雑音排除性が得られるようになっているGaNスイッチングデバイス。
- 請求項6に記載のGaNスイッチングデバイスにおいて、前記低しきい値のGaNダイオード接続トランジスタが、逆方向モードで前記GaNスイッチングデバイスを保護するための並列ダイオードとして機能するようになっているGaNスイッチングデバイス。
- 請求項6に記載のGaNスイッチングデバイスにおいて、前記基板は、GaN基板と、炭化ケイ素基板と、アルミナ基板と、シリコンのみの基板とより成る群から選択されているGaNスイッチングデバイス。
- 請求項6に記載のGaNスイッチングデバイスにおいて、前記高しきい値のGaNトランジスタ対前記低しきい値のGaNダイオード接続トランジスタの表面積比はほぼ9:1よりも大きくなっているGaNスイッチングデバイス。
- 請求項6に記載のGaNスイッチングデバイスにおいて、前記高しきい値のGaNトランジスタのしきい値電圧は、ほぼ3ボルトよりも大きくなっているGaNスイッチングデバイス。
- 請求項6に記載のGaNスイッチングデバイスにおいて、前記低しきい値のGaNダイオード接続トランジスタのしきい値電圧は、ほぼ0.7ボルトよりも小さくなっているGaNスイッチングデバイス。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/800,902 US9263439B2 (en) | 2010-05-24 | 2010-05-24 | III-nitride switching device with an emulated diode |
US12/800,902 | 2010-05-24 |
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JP2011249778A JP2011249778A (ja) | 2011-12-08 |
JP6054014B2 true JP6054014B2 (ja) | 2016-12-27 |
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US8891266B2 (en) * | 2012-03-13 | 2014-11-18 | International Business Machines Corporation | Monolithic high voltage multiplier having high voltage semiconductor diodes and high-k capacitors |
US9064722B2 (en) | 2012-03-13 | 2015-06-23 | International Business Machines Corporation | Breakdown voltage multiplying integration scheme |
US8587033B1 (en) | 2012-06-04 | 2013-11-19 | Infineon Technologies Austria Ag | Monolithically integrated HEMT and current protection device |
JP6048068B2 (ja) * | 2012-10-25 | 2016-12-21 | 株式会社島津製作所 | プラズマ用高周波電源及びそれを用いたicp発光分光分析装置 |
US9484418B2 (en) * | 2012-11-19 | 2016-11-01 | Delta Electronics, Inc. | Semiconductor device |
JP6090007B2 (ja) * | 2013-06-26 | 2017-03-08 | 株式会社デンソー | 駆動回路 |
KR102112299B1 (ko) | 2014-01-10 | 2020-05-18 | 삼성전자주식회사 | 파워 스위치 소자의 구동 방법 및 구동 회로 |
FR3017995A1 (fr) * | 2014-02-27 | 2015-08-28 | Commissariat Energie Atomique | Dispositif electronique a transistor hemt polarise en inverse |
US10355475B2 (en) * | 2014-08-15 | 2019-07-16 | Navitas Semiconductor, Inc. | GaN overvoltage protection circuit |
TWI682515B (zh) | 2014-08-20 | 2020-01-11 | 美商納維達斯半導體公司 | 具有分布閘極之功率電晶體 |
US9571093B2 (en) | 2014-09-16 | 2017-02-14 | Navitas Semiconductor, Inc. | Half bridge driver circuits |
US9960620B2 (en) | 2014-09-16 | 2018-05-01 | Navitas Semiconductor, Inc. | Bootstrap capacitor charging circuit for GaN devices |
FR3028666A1 (fr) * | 2014-11-17 | 2016-05-20 | Commissariat Energie Atomique | Circuit integre a structure de commutation de puissance |
JP2017055255A (ja) * | 2015-09-09 | 2017-03-16 | 株式会社東芝 | パワー半導体装置 |
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2010
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US20110284862A1 (en) | 2011-11-24 |
EP2390919A2 (en) | 2011-11-30 |
US9263439B2 (en) | 2016-02-16 |
EP2390919A3 (en) | 2014-02-26 |
US20160172353A1 (en) | 2016-06-16 |
JP2011249778A (ja) | 2011-12-08 |
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