JP2011249778A - 疑似ダイオードを有するiii族窒化物スイッチングデバイス - Google Patents
疑似ダイオードを有するiii族窒化物スイッチングデバイス Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 230000036039 immunity Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 10
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910002601 GaN Inorganic materials 0.000 description 74
- 238000010586 diagram Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- -1 InN Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
【解決手段】GaNスイッチングデバイスは、低しきい値のGaNトランジスタ346の両端間に結合された高しきい値のGaNトランジスタ340を有しており、この低しきい値のGaNトランジスタ346が逆方向モードで並列ダイオードとして機能するようになっている。高しきい値のGaNトランジスタ340は、順方向モードの際にGaNスイッチングデバイスに対し雑音排除性を提供するように構成されている。互いに著しく異なるしきい値を有するようにする。その結果、従来のシリコンFETにおける固有のボディダイオードの機能及びモノリシック構造を維持したまま、III族窒化物スイッチングデバイスの優れたスイッチング特性を利用することができるようになる。
【選択図】図3
Description
[定義]
本発明において、“III族窒化物”とは、窒素と少なくとも1つのIII族元素とを有する化合物半導体、例えば、GaN、AlGaN、InN、AlN、InGaN、InAlGaN等であるが、これらに限定されるものではない。
Claims (20)
- ドライバ回路によりスイッチングされる高しきい値のIII族窒化物トランジスタと、
この高しきい値のIII族窒化物トランジスタの両端間に結合された低しきい値のIII族窒化物ダイオード接続トランジスタと
を具えるIII族窒化物スイッチングデバイスであって、
前記高しきい値のIII族窒化物トランジスタにより、順方向モードで前記III族窒化物スイッチングデバイスに対する雑音排除性が得られ、
前記低しきい値のIII族窒化物ダイオード接続トランジスタが、逆方向モードで前記III族窒化物スイッチングデバイスを保護するための並列ダイオードとして機能するようになっている、
III族窒化物スイッチングデバイス。 - 請求項1に記載のIII族窒化物スイッチングデバイスにおいて、前記高しきい値のIII族窒化物トランジスタがエンハンスメントモードのGaN‐HEMTを有しているIII族窒化物スイッチングデバイス。
- 請求項1に記載のIII族窒化物スイッチングデバイスにおいて、前記低しきい値のIII族窒化物ダイオード接続トランジスタがエンハンスメントモードのGaN‐HEMTを有しているIII族窒化物スイッチングデバイス。
- 請求項1に記載のIII族窒化物スイッチングデバイスにおいて、前記低しきい値のIII族窒化物ダイオード接続トランジスタのゲート及びソースが互いに短絡され、この低しきい値のIII族窒化物ダイオード接続トランジスタが前記並列ダイオードとして機能するようになっているIII族窒化物スイッチングデバイス。
- 請求項1に記載のIII族窒化物スイッチングデバイスにおいて、前記高しきい値のIII族窒化物トランジスタは、この高しきい値のIII族窒化物トランジスタにおいて二次元電子ガス(2DEG)伝導チャネルを遮断することにより形成されているIII族窒化物スイッチングデバイス。
- 請求項5に記載のIII族窒化物スイッチングデバイスにおいて、前記二次元電子ガス伝導チャネルは、前記高しきい値のIII族窒化物トランジスタのゲート領域において電荷を捕捉することにより遮断されるようになっているIII族窒化物スイッチングデバイス。
- 請求項5に記載のIII族窒化物スイッチングデバイスにおいて、前記二次元電子ガス伝導チャネルは、前記高しきい値のIII族窒化物トランジスタのゲートの下側に凹所を形成することにより遮断されるようになっているIII族窒化物スイッチングデバイス。
- 請求項1に記載のIII族窒化物スイッチングデバイスにおいて、このIII族窒化物スイッチングデバイスは、ハーフブリッジ回路におけるスイッチとして用いられているIII族窒化物スイッチングデバイス。
- 請求項1に記載のIII族窒化物スイッチングデバイスにおいて、前記ドライバ回路は、前記高しきい値のIII族窒化物トランジスタをほぼ0及び12ボルト間の電圧によりスイッチングするようになっており、前記高しきい値のIII族窒化物トランジスタのドレイン及びソース間の電圧はほぼ40ボルト及び600ボルト間となるようにしてあるIII族窒化物スイッチングデバイス。
- 基板上に形成された高しきい値のGaNトランジスタと、
基板上に形成された低しきい値のGaNダイオード接続トランジスタと
を具えるGaNスイッチングデバイスであって、
前記低しきい値のGaNダイオード接続トランジスタのゲート及びソースが互いに短絡され、この低しきい値のGaNダイオード接続トランジスタが並列ダイオードとして機能するようになっており、
前記高しきい値のGaNトランジスタのドレインが前記低しきい値のGaNダイオード接続トランジスタのドレインに短絡され、前記高しきい値のGaNトランジスタのソースが前記低しきい値のGaNダイオード接続トランジスタのソースに短絡されている、
GaNスイッチングデバイス。 - 請求項10に記載のGaNスイッチングデバイスにおいて、前記高しきい値のGaNトランジスタにより、順方向モードで前記GaNスイッチングデバイスに対する雑音排除性が得られるようになっているGaNスイッチングデバイス。
- 請求項10に記載のGaNスイッチングデバイスにおいて、前記低しきい値のGaNダイオード接続トランジスタが、逆方向モードで前記GaNスイッチングデバイスを保護するための並列ダイオードとして機能するようになっているGaNスイッチングデバイス。
- 請求項10に記載のGaNスイッチングデバイスにおいて、前記基板は、GaN基板と、炭化ケイ素基板と、アルミナ基板と、シリコンのみの基板とより成る群から選択されているGaNスイッチングデバイス。
- 請求項10に記載のGaNスイッチングデバイスにおいて、前記高しきい値のGaNトランジスタは、この高しきい値のGaNトランジスタにおいて二次元電子ガス伝導チャネルを遮断することにより形成されているGaNスイッチングデバイス。
- 請求項14に記載のGaNスイッチングデバイスにおいて、前記二次元電子ガス伝導チャネルは、前記高しきい値のGaNトランジスタのゲート領域において電荷を捕捉することにより遮断されるようになっているGaNスイッチングデバイス。
- 請求項14に記載のGaNスイッチングデバイスにおいて、前記二次元電子ガス伝導チャネルは、前記高しきい値のGaNトランジスタのゲートの下側に凹所を形成することにより遮断されるようになっているGaNスイッチングデバイス。
- 請求項10に記載のGaNスイッチングデバイスにおいて、前記高しきい値のGaNトランジスタの表面積は、前記低しきい値のGaNダイオード接続トランジスタの表面積よりも著しく大きくなっているGaNスイッチングデバイス。
- 請求項17に記載のGaNスイッチングデバイスにおいて、前記高しきい値のGaNトランジスタ対前記低しきい値のGaNダイオード接続トランジスタの表面積比はほぼ9:1よりも大きくなっているGaNスイッチングデバイス。
- 請求項10に記載のGaNスイッチングデバイスにおいて、前記高しきい値のGaNトランジスタのしきい値電圧は、ほぼ3ボルトよりも大きくなっているGaNスイッチングデバイス。
- 請求項10に記載のGaNスイッチングデバイスにおいて、前記低しきい値のGaNダイオード接続トランジスタのしきい値電圧は、ほぼ0.7ボルトよりも小さくなっているGaNスイッチングデバイス。
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US12/800,902 US9263439B2 (en) | 2010-05-24 | 2010-05-24 | III-nitride switching device with an emulated diode |
US12/800,902 | 2010-05-24 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US11545566B2 (en) | 2019-12-26 | 2023-01-03 | Raytheon Company | Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement |
US11362190B2 (en) | 2020-05-22 | 2022-06-14 | Raytheon Company | Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers |
CN117155359B (zh) * | 2023-10-26 | 2024-02-09 | 深圳智芯微电子科技有限公司 | GaN HEMT器件预处理方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0298170A (ja) * | 1988-10-05 | 1990-04-10 | Nec Corp | 電界効果トランジスタ集積装置 |
JPH04261065A (ja) * | 1991-01-29 | 1992-09-17 | Mitsubishi Electric Corp | 半導体装置 |
JPH09223799A (ja) * | 1995-10-13 | 1997-08-26 | Siliconix Inc | 多重ゲートmosfet |
JP2005235985A (ja) * | 2004-02-19 | 2005-09-02 | Toshiba Corp | 半導体装置 |
JP2008021930A (ja) * | 2006-07-14 | 2008-01-31 | Denso Corp | 半導体装置 |
JP2008091394A (ja) * | 2006-09-29 | 2008-04-17 | National Institute Of Advanced Industrial & Technology | 電界効果トランジスタ及びその製造方法 |
JP2008270847A (ja) * | 2004-01-23 | 2008-11-06 | Internatl Rectifier Corp | 半導体デバイスの製造方法 |
JP2009164158A (ja) * | 2007-12-28 | 2009-07-23 | Panasonic Corp | 半導体装置及びその製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5100831A (en) * | 1990-02-16 | 1992-03-31 | Sumitomo Electric Industries, Ltd. | Method for fabricating semiconductor device |
FR2687513B1 (fr) * | 1992-02-18 | 1995-11-24 | Int Rectifier Corp | Alimentation resonnante a auto-generation et procede de production d'energie pour un circuit de commutation a transistors. |
US5973367A (en) * | 1995-10-13 | 1999-10-26 | Siliconix Incorporated | Multiple gated MOSFET for use in DC-DC converter |
US5969513A (en) * | 1998-03-24 | 1999-10-19 | Volterra Semiconductor Corporation | Switched capacitor current source for use in switching regulators |
US6239491B1 (en) * | 1998-05-18 | 2001-05-29 | Lsi Logic Corporation | Integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level, and process for making same |
US20020105009A1 (en) * | 2000-07-13 | 2002-08-08 | Eden Richard C. | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor |
US6992319B2 (en) * | 2000-07-18 | 2006-01-31 | Epitaxial Technologies | Ultra-linear multi-channel field effect transistor |
US7550781B2 (en) * | 2004-02-12 | 2009-06-23 | International Rectifier Corporation | Integrated III-nitride power devices |
US7465997B2 (en) * | 2004-02-12 | 2008-12-16 | International Rectifier Corporation | III-nitride bidirectional switch |
US7910993B2 (en) * | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
JP2007335677A (ja) * | 2006-06-15 | 2007-12-27 | Furukawa Electric Co Ltd:The | Iii族窒化物半導体を用いたノーマリオフ型電界効果トランジスタ及びその製造方法 |
TW200835126A (en) * | 2006-11-28 | 2008-08-16 | Int Rectifier Corp | Synchronous DC/DC converter |
US7839131B2 (en) * | 2007-06-27 | 2010-11-23 | International Rectifier Corporation | Gate driving scheme for depletion mode devices in buck converters |
CN101359686B (zh) * | 2007-08-03 | 2013-01-02 | 香港科技大学 | 可靠的常关型ⅲ-氮化物有源器件结构及相关方法和*** |
US20090072269A1 (en) * | 2007-09-17 | 2009-03-19 | Chang Soo Suh | Gallium nitride diodes and integrated components |
US7965126B2 (en) * | 2008-02-12 | 2011-06-21 | Transphorm Inc. | Bridge circuits and their components |
US8076699B2 (en) | 2008-04-02 | 2011-12-13 | The Hong Kong Univ. Of Science And Technology | Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems |
US8964413B2 (en) * | 2010-04-22 | 2015-02-24 | Flextronics Ap, Llc | Two stage resonant converter enabling soft-switching in an isolated stage |
-
2010
- 2010-05-24 US US12/800,902 patent/US9263439B2/en active Active
-
2011
- 2011-04-15 EP EP11003177.0A patent/EP2390919A3/en not_active Withdrawn
- 2011-04-25 JP JP2011097177A patent/JP6054014B2/ja active Active
-
2016
- 2016-02-09 US US15/019,163 patent/US20160172353A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0298170A (ja) * | 1988-10-05 | 1990-04-10 | Nec Corp | 電界効果トランジスタ集積装置 |
JPH04261065A (ja) * | 1991-01-29 | 1992-09-17 | Mitsubishi Electric Corp | 半導体装置 |
JPH09223799A (ja) * | 1995-10-13 | 1997-08-26 | Siliconix Inc | 多重ゲートmosfet |
JP2008270847A (ja) * | 2004-01-23 | 2008-11-06 | Internatl Rectifier Corp | 半導体デバイスの製造方法 |
JP2005235985A (ja) * | 2004-02-19 | 2005-09-02 | Toshiba Corp | 半導体装置 |
JP2008021930A (ja) * | 2006-07-14 | 2008-01-31 | Denso Corp | 半導体装置 |
JP2008091394A (ja) * | 2006-09-29 | 2008-04-17 | National Institute Of Advanced Industrial & Technology | 電界効果トランジスタ及びその製造方法 |
JP2009164158A (ja) * | 2007-12-28 | 2009-07-23 | Panasonic Corp | 半導体装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015012624A (ja) * | 2013-06-26 | 2015-01-19 | 株式会社デンソー | 駆動回路 |
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US20110284862A1 (en) | 2011-11-24 |
EP2390919A2 (en) | 2011-11-30 |
JP6054014B2 (ja) | 2016-12-27 |
EP2390919A3 (en) | 2014-02-26 |
US20160172353A1 (en) | 2016-06-16 |
US9263439B2 (en) | 2016-02-16 |
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