JP6047289B2 - 表示装置 - Google Patents
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- Publication number
- JP6047289B2 JP6047289B2 JP2012025917A JP2012025917A JP6047289B2 JP 6047289 B2 JP6047289 B2 JP 6047289B2 JP 2012025917 A JP2012025917 A JP 2012025917A JP 2012025917 A JP2012025917 A JP 2012025917A JP 6047289 B2 JP6047289 B2 JP 6047289B2
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- display
- light
- region
- panel
- optical shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H04N13/356—Image reproducers having separate monoscopic and stereoscopic modes
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1347—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
-
- H—ELECTRICITY
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Description
図1(A)は、本発明の一態様の表示装置を示す模式図である。図1(A)に示す表示装置は、複数の画素領域100がマトリクス状に配設された表示パネル10と、複数の光学シャッタ領域200がマトリクス状に配設された遮光パネル20とを有する。なお、遮光パネル20は、表示パネル10から光が放出される方向に設けられている。そして、遮光パネル20においては、複数の光学シャッタ領域200毎に利用者に視認される表示を遮ることが可能である。なお、ここでは、遮光パネル20においては、複数の光学シャッタ領域200以外の領域で利用者に視認される表示が遮られることはないこととする。また、図1(A)において、遮光パネル20に示す点線は、表示パネル10に配設された画素領域100の表示が投影される領域を示したものであることを付記する。
本発明の一態様に係る表示装置は、図1(A)に示す表示装置に限定されない。例えば、図3(A)〜(C)に示す表示装置を本発明の一態様に係る表示装置として適用することが可能である。
上述した表示パネル10の具体例について、図4(A)〜(C)を参照して説明する。なお、図4(A)は、有機エレクトロルミネッセンスを利用して白色を呈する光を発光する発光素子と、発光素子が発光する白色を呈する光に含まれる特定の波長帯域の光を透過し、白色を呈する光から有彩色を呈する光へと変化させるカラーフィルタと、を有する画素領域100の断面図であり、図4(B)、(C)は図4(A)に示す画素領域100の平面図である。
図4に示した表示パネル10の具体例と異なる表示パネル10の具体例について、図5(A)、(B)を参照して説明する。なお、図5(A)、(B)は、有機エレクトロルミネッセンスを利用して白色を呈する光を発光する発光素子と、発光素子が発光する白色を呈する光に含まれる特定の波長帯域の光を透過し、白色を呈する光から有彩色を呈する光へと変化させるカラーフィルタと、を有する画素領域100の断面図である。
上述した遮光パネル20の具体例について、図6(A)、(B)を参照して説明する。なお、図6(A)は、トランジスタと、トランジスタを介して信号が入力される液晶素子と、を有する光学シャッタ領域の平面図であり、図6(B)は、図6(A)に示す光学シャッタ領域の破線A1−A2及び破線B1−B2における断面図である。図6(A)に示す光学シャッタ領域においては、液晶素子に印加される電圧がトランジスタを介して入力される信号に応じて決まる。したがって、当該信号に応じて液晶素子が有する液晶の配向を制御することで、当該光学シャッタ領域を光が透過するか否かが選択される。なお、本発明の一態様に係る表示装置においては、当該トランジスタをスイッチとして機能する素子に置換することが可能である。すなわち、光学シャッタ領域には、スイッチとして機能する素子であればどのような素子を設ける構成としてもよい。例えば、当該トランジスタをMEMSスイッチ又はリレースイッチなどに置換することが可能である。
図6に示した遮光パネル20の具体例と異なる遮光パネル20の具体例について、図7(A)、(B)を参照して説明する。具体的には、IPS型の液晶素子やブルー相を用いた液晶素子のように、一対の電極が共に一の基板に形成される液晶素子を有する光学シャッタ領域が設けられた遮光パネルの一例について説明する。
図6、7に示した遮光パネル20の具体例と異なる遮光パネル20の具体例について、図18を参照して説明する。具体的には、図6、7に示す光学シャッタ領域が有するスイッチが設けられない構成の光学シャッタ領域が設けられた遮光パネルの一例について説明する。図18に示す光学シャッタ領域は、ストライプ状に加工された電極702(電極702a、電極702b、及び電極702c)と、ストライプ状に加工された電極712(電極712a、電極712b、及び電極712c)と、が格子状に積層されている。電極を格子状に液晶を介して重ね合わせることで、ドット状に液晶素子を形成することができ、より精細な遮光領域又は透光領域の制御が可能となる。
20 遮光パネル
20a 領域
30 制御部
31 左目
32 右目
100 画素領域
100a 画素領域
100b 画素領域
100c 画素領域
100d 画素領域
106 液晶素子
107 トランジスタ
108 容量素子
200 光学シャッタ領域
200a 光学シャッタ領域
200b 光学シャッタ領域
201 基板
202 ゲート電極層
204 ゲート絶縁層
206 半導体層
208 ドレイン電極層
210 絶縁層
212 絶縁層
214 反射電極層
216 隔壁
218 発光層
219 半透過電極層
220a 透明電極層
220b 透明電極層
230 トランジスタ
240a 青色画素
240b 緑色画素
240c 赤色画素
251 基板
252 遮光膜
254 カラーフィルタ
256 オーバーコート
260 空間
300 基板
310 絶縁層
312 隔壁
314 電極
316 発光層
318 電極
320 発光素子
322 空間
330 トランジスタ
350 基板
352 遮光膜
354 カラーフィルタ
356 オーバーコート
500 基板
501 導電層
502 導電層
503 導電層
504 導電層
505 電極
506 ゲート絶縁層
507 半導体層
510 スペーサ
512 絶縁層
513 絶縁層
514 基板
515 電極
516 液晶層
517 遮蔽膜
520 半導体層
521 導電層
523 半導体層
600 基板
601 導電層
602 導電層
603 導電層
604 導電層
605 電極
606 ゲート絶縁層
607 半導体層
608 電極
609 絶縁層
610 スペーサ
612 絶縁層
613 絶縁層
614 基板
616 液晶層
702 電極
702a 電極
702b 電極
702c 電極
712 電極
712a 電極
712b 電極
712c 電極
1000 画面
1001 領域
1002 領域
2000 観察者センサー
5001 筐体
5002 筐体
5003 表示部
5004 表示部
5005 マイクロホン
5006 スピーカー
5007 操作キー
5008 スタイラス
5201 筐体
5202 表示部
5203 キーボード
5204 ポインティングデバイス
5401 筐体
5402 表示部
5403 操作キー
A100_1 画素領域
A100_2 画素領域
A200_1 光学シャッタ領域
A200_2 光学シャッタ領域
B100_1 画素領域
B100_2 画素領域
B200_1 光学シャッタ領域
B200_2 光学シャッタ領域
C100_1 画素領域
C100_2 画素領域
C200_1 光学シャッタ領域
C200_2 光学シャッタ領域
Claims (6)
- 複数の画素領域がマトリクス状に配設された表示パネルと、
複数の光学シャッタ領域がマトリクス状に配設された遮光パネルと、
制御部と、を有する表示装置であって、
前記光学シャッタ領域は、トランジスタと、前記トランジスタを介して入力される信号に応じて光を透過させるか否かが選択される液晶素子と、を有し、
前記表示パネルから光が放出される方向に前記遮光パネルが設けられ、
前記表示装置の第1の領域において3次元表示が行われ、同時に、前記表示装置の第2の領域において2次元表示が行われ、
前記制御部は、前記表示パネルに表示制御信号を供給する機能と、前記遮光パネルに遮光制御信号供給する機能と、を有し、
前記制御部は、前記遮光制御信号を供給した後、前記3次元表示を行う領域が変更されるまで、前記遮光制御信号の供給を停止する機能を有し、
前記トランジスタは、チャネル領域が酸化物半導体によって形成されている表示装置。 - 請求項1において、
前記表示パネルが液晶の配向を制御することで表示を行うパネルである表示装置。 - 請求項1において、
前記表示パネルが有機エレクトロルミネッセンスを利用して表示を行うパネルである表示装置。 - 請求項3において、
前記表示パネルが上面射出構造又は下面射出構造の表示パネルである表示装置。 - 請求項1乃至請求項4のいずれか一項において、
前記遮光パネルに配設される全ての前記光学シャッタ領域の一端から他端までの距離が、前記表示パネルに配設される全ての前記画素領域の一端から他端までの距離より短い表示装置。 - 請求項1乃至請求項5のいずれか一項において、
利用者の視点を検知する観察者センサーを有し、
前記観察者センサーで検知された利用者の視点に応じて前記パネルが有する複数の光学シャッタ領域の動作を制御する表示装置。
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KR102462043B1 (ko) * | 2009-10-16 | 2022-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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JP5615136B2 (ja) * | 2010-01-12 | 2014-10-29 | 三菱電機株式会社 | 立体画像補正方法、立体表示装置、および立体画像生成装置 |
US8427626B2 (en) | 2010-01-27 | 2013-04-23 | Sony Corporation | Lens array element and image display device |
WO2011122299A1 (en) | 2010-03-31 | 2011-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
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US9167234B2 (en) | 2011-02-14 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2012111427A1 (en) | 2011-02-16 | 2012-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9443455B2 (en) | 2011-02-25 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a plurality of pixels |
-
2012
- 2012-02-01 US US13/363,408 patent/US9167234B2/en active Active
- 2012-02-01 TW TW101103244A patent/TWI569041B/zh active
- 2012-02-06 WO PCT/JP2012/053198 patent/WO2012111578A1/en active Application Filing
- 2012-02-09 JP JP2012025917A patent/JP6047289B2/ja active Active
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2015
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2016
- 2016-11-21 JP JP2016225625A patent/JP2017076131A/ja not_active Withdrawn
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2019
- 2019-02-12 JP JP2019022299A patent/JP2019082728A/ja not_active Withdrawn
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JP2017076131A (ja) | 2017-04-20 |
US20120206503A1 (en) | 2012-08-16 |
WO2012111578A1 (en) | 2012-08-23 |
JP2019082728A (ja) | 2019-05-30 |
TWI569041B (zh) | 2017-02-01 |
US9167234B2 (en) | 2015-10-20 |
US20150198813A1 (en) | 2015-07-16 |
TW201248199A (en) | 2012-12-01 |
JP2013020224A (ja) | 2013-01-31 |
US9743071B2 (en) | 2017-08-22 |
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