JP6021762B2 - 固体撮像装置および製造方法、並びに、電子機器 - Google Patents
固体撮像装置および製造方法、並びに、電子機器 Download PDFInfo
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- JP6021762B2 JP6021762B2 JP2013176619A JP2013176619A JP6021762B2 JP 6021762 B2 JP6021762 B2 JP 6021762B2 JP 2013176619 A JP2013176619 A JP 2013176619A JP 2013176619 A JP2013176619 A JP 2013176619A JP 6021762 B2 JP6021762 B2 JP 6021762B2
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Description
同図は、横軸がTFTのチャネル内の位置とされ、縦軸が電位とされ、線51により、チャネル内の位置に応じた電位が示されている。なお、同図の横軸に示されたPdは、チャネルのドレイン端の位置を表しており、Psは、チャネルのソース端の位置を表している。
第1の半導体基板に形成され、光電変換された電荷を蓄積する電荷蓄積部と、
第2の半導体基板に形成され、前記電荷蓄積部に蓄積された電荷を保持する電荷保持部と、
前記第1の半導体基板および前記第2の半導体基板に形成され、前記電荷蓄積部に蓄積された電荷を、前記電荷保持部に転送する転送トランジスタとを備え、
前記第1の半導体基板と前記第2の半導体基板との接合界面が、前記転送トランジスタのチャネル内に形成されている
固体撮像装置。
(2)
前記転送トランジスタは、
ゲート端子が前記第1の半導体基板を貫通して前記第2の半導体基板に達するように形成されている
(1)に記載の固体撮像装置。
(3)
前記転送トランジスタのゲート端子の、
ソース端よりドレイン端に近い位置に前記接合界面が形成されている
(2)に記載の固体撮像装置。
(4)
前記第2の半導体基板には、少なくとも前記電荷保持部に保持された電荷に対応する信号電圧を増幅する増幅トランジスタ、前記電荷保持部に保持された電荷をリセットするリセットトランジスタ、および、信号線に送出すべき信号であって、前記電荷保持部から読み出された電荷に対応する信号を選択する選択トランジスタを含む画素トランジスタが、さらに形成される
(1)に記載の固体撮像装置。
(5)
前記増幅トランジスタのゲート端子と、前記電荷保持部とがシリコンによって接続される
(4)に記載の固体撮像装置。
(6)
前記増幅トランジスタ、前記リセットトランジスタ、および、前記選択トランジスタを接続するボディコンタクトとしてのP型半導体領域が形成される
(4)に記載の固体撮像装置。
(7)
前記電荷保持部を構成するN型半導体領域の一部が、前記増幅トランジスタと直接接続される
(4)に記載の固体撮像装置。
(8)
単結晶シリコン基板である前記第2の半導体基板を、シリコン基板である前記第1の半導体基板と貼り合わせて構成される
(4)に記載の固体撮像装置。
(9)
前記第1の半導体基板と前記第2の半導体基板との接合界面にシリコン層が形成されている
(8)に記載の固体撮像装置。
(10)
前記シリコン層は、エピタキシャル成長により形成される
(9)に記載の固体撮像装置。
(11)
前記シリコン層にシリコンイオンが注入され、前記第2の半導体基板と貼り合わせられる
(10)に記載の固体撮像装置。
(12)
前記第1の半導体基板内に遮光膜が埋め込まれている
(1)に記載の固体撮像装置。
(13)
前記転送トランジスタのゲート端子付近において、前記遮光膜が設けられていない領域が存在し、
前記転送トランジスタのゲート端子付近において、前記遮光膜が前記転送トランジスタのゲート端子の延在方向と並行な方向に長く構成されている
(12)に記載の固体撮像装置。
(14)
前記遮光膜は、
タングステン、チタン、タンタル、ニッケル、モリブデン、クロム、イリジウム、または、タングステンシリコン化合物により構成される
(12)に記載の固体撮像装置。
(15)
複数の前記電荷蓄積部に対応して1つの前記電荷保持部が設けられる
(1)に記載の固体撮像装置。
(16)
複数の前記電荷蓄積部が、前記第1の半導体基板と前記第2の半導体基板とが積層される方向に、多段化されている
(1)に記載の固体撮像装置。
(17)
プレーナ型構造として構成される
(1)に記載の固体撮像装置。
(18)
メサ型構造として構成される
(1)に記載の固体撮像装置。
(19)
光電変換された電荷を蓄積する電荷蓄積部が形成される第1の半導体基板と、前記電荷蓄積部に蓄積された電荷を保持する電荷保持部が形成される第2の半導体基板とを貼り合わせる工程と、
前記電荷蓄積部に蓄積された電荷を前記電荷保持部に転送する転送トランジスタを、前記第1の半導体基板および前記第2の半導体基板に形成する工程と
を含む固体撮像装置の製造方法。
(20)
第1の半導体基板に形成され、光電変換された電荷を蓄積する電荷蓄積部と、
第2の半導体基板に形成され、前記電荷蓄積部に蓄積された電荷を保持する電荷保持部と、
前記第1の半導体基板および前記第2の半導体基板に形成され、前記電荷蓄積部に蓄積された電荷を、前記電荷保持部に転送する転送トランジスタとを有し、
前記第1の半導体基板と前記第2の半導体基板との接合界面が、前記転送トランジスタのチャネル内に形成されている固体撮像装置を備える
電子機器。
Claims (20)
- 第1の半導体基板に形成され、光電変換された電荷を蓄積する電荷蓄積部と、
第2の半導体基板に形成され、前記電荷蓄積部に蓄積された電荷を保持する電荷保持部と、
前記第1の半導体基板および前記第2の半導体基板に形成され、前記電荷蓄積部に蓄積された電荷を、前記電荷保持部に転送する転送トランジスタとを備え、
前記第1の半導体基板と前記第2の半導体基板との接合界面が、前記転送トランジスタのチャネル内に形成されている
固体撮像装置。 - 前記転送トランジスタは、
ゲート端子が前記第1の半導体基板を貫通して前記第2の半導体基板に達するように形成されている
請求項1に記載の固体撮像装置。 - 前記転送トランジスタのゲート端子の、
ソース端よりドレイン端に近い位置に前記接合界面が形成されている
請求項2に記載の固体撮像装置。 - 前記第2の半導体基板には、少なくとも前記電荷保持部に保持された電荷に対応する信号電圧を増幅する増幅トランジスタ、前記電荷保持部に保持された電荷をリセットするリセットトランジスタ、および、信号線に送出すべき信号であって、前記電荷保持部から読み出された電荷に対応する信号を選択する選択トランジスタを含む画素トランジスタが、さらに形成される
請求項1に記載の固体撮像装置。 - 前記増幅トランジスタのゲート端子と、前記電荷保持部とがシリコンによって接続される
請求項4に記載の固体撮像装置。 - 前記増幅トランジスタ、前記リセットトランジスタ、および、前記選択トランジスタを接続するボディコンタクトとしてのP型半導体領域が形成される
請求項4に記載の固体撮像装置。 - 前記電荷保持部を構成するN型半導体領域の一部が、前記増幅トランジスタと直接接続される
請求項4に記載の固体撮像装置。 - 単結晶シリコン基板である前記第2の半導体基板を、シリコン基板である前記第1の半導体基板と貼り合わせて構成される
請求項4に記載の固体撮像装置。 - 前記第1の半導体基板と前記第2の半導体基板との接合界面にシリコン層が形成されている
請求項8に記載の固体撮像装置。 - 前記シリコン層は、エピタキシャル成長により形成される
請求項9に記載の固体撮像装置。 - 前記シリコン層にシリコンイオンが注入され、前記第2の半導体基板と貼り合わせられる
請求項10に記載の固体撮像装置。 - 前記第1の半導体基板内に遮光膜が埋め込まれている
請求項1に記載の固体撮像装置。 - 前記転送トランジスタのゲート端子付近において、前記遮光膜が設けられていない領域が存在し、
前記転送トランジスタのゲート端子付近において、前記遮光膜が前記転送トランジスタのゲート端子の延在方向と並行な方向に長く構成されている
請求項12に記載の固体撮像装置。 - 前記遮光膜は、
タングステン、チタン、タンタル、ニッケル、モリブデン、クロム、イリジウム、または、タングステンシリコン化合物により構成される
請求項12に記載の固体撮像装置。 - 複数の前記電荷蓄積部に対応して1つの前記電荷保持部が設けられる
請求項1に記載の固体撮像装置。 - 複数の前記電荷蓄積部が、前記第1の半導体基板と前記第2の半導体基板とが積層される方向に、多段化されている
請求項1に記載の固体撮像装置。 - プレーナ型構造として構成される
請求項1に記載の固体撮像装置。 - メサ型構造として構成される
請求項1に記載の固体撮像装置。 - 光電変換された電荷を蓄積する電荷蓄積部が形成される第1の半導体基板と、前記電荷蓄積部に蓄積された電荷を保持する電荷保持部が形成される第2の半導体基板とを貼り合わせる工程と、
前記電荷蓄積部に蓄積された電荷を前記電荷保持部に転送する転送トランジスタを、前記第1の半導体基板および前記第2の半導体基板に形成する工程と
を含む固体撮像装置の製造方法。 - 第1の半導体基板に形成され、光電変換された電荷を蓄積する電荷蓄積部と、
第2の半導体基板に形成され、前記電荷蓄積部に蓄積された電荷を保持する電荷保持部と、
前記第1の半導体基板および前記第2の半導体基板に形成され、前記電荷蓄積部に蓄積された電荷を、前記電荷保持部に転送する転送トランジスタとを有し、
前記第1の半導体基板と前記第2の半導体基板との接合界面が、前記転送トランジスタのチャネル内に形成されている固体撮像装置を備える
電子機器。
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