JP5963822B2 - 研磨粒子、研磨スラリー及びこれを用いた半導体素子の製造方法 - Google Patents
研磨粒子、研磨スラリー及びこれを用いた半導体素子の製造方法 Download PDFInfo
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- JP5963822B2 JP5963822B2 JP2014181298A JP2014181298A JP5963822B2 JP 5963822 B2 JP5963822 B2 JP 5963822B2 JP 2014181298 A JP2014181298 A JP 2014181298A JP 2014181298 A JP2014181298 A JP 2014181298A JP 5963822 B2 JP5963822 B2 JP 5963822B2
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- 239000002245 particle Substances 0.000 title claims description 339
- 238000005498 polishing Methods 0.000 title claims description 96
- 239000002002 slurry Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 title claims description 9
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 45
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 45
- 239000013078 crystal Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 150000003839 salts Chemical class 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 6
- 235000001014 amino acid Nutrition 0.000 claims description 6
- 150000001413 amino acids Chemical class 0.000 claims description 6
- 125000000129 anionic group Chemical group 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000003002 pH adjusting agent Substances 0.000 claims description 6
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 6
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 3
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 3
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 claims description 3
- 229920002845 Poly(methacrylic acid) Polymers 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- QIVBCDIJIAJPQS-UHFFFAOYSA-N Tryptophan Natural products C1=CC=C2C(CC(N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-UHFFFAOYSA-N 0.000 claims description 3
- 229940124277 aminobutyric acid Drugs 0.000 claims description 3
- 229920006318 anionic polymer Polymers 0.000 claims description 3
- 239000011668 ascorbic acid Substances 0.000 claims description 3
- 235000010323 ascorbic acid Nutrition 0.000 claims description 3
- 229960005070 ascorbic acid Drugs 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 239000002270 dispersing agent Substances 0.000 claims description 3
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 claims description 3
- 239000004220 glutamic acid Substances 0.000 claims description 3
- 235000013922 glutamic acid Nutrition 0.000 claims description 3
- 229960002989 glutamic acid Drugs 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 229940081066 picolinic acid Drugs 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229960004799 tryptophan Drugs 0.000 claims description 3
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 24
- 229910021642 ultra pure water Inorganic materials 0.000 description 20
- 239000012498 ultrapure water Substances 0.000 description 20
- 239000011259 mixed solution Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 15
- 229910052684 Cerium Inorganic materials 0.000 description 12
- 229910021529 ammonia Inorganic materials 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 12
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 12
- 239000002585 base Substances 0.000 description 9
- ITZXULOAYIAYNU-UHFFFAOYSA-N cerium(4+) Chemical class [Ce+4] ITZXULOAYIAYNU-UHFFFAOYSA-N 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000003637 basic solution Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000011164 primary particle Substances 0.000 description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 6
- XQTIWNLDFPPCIU-UHFFFAOYSA-N cerium(3+) Chemical class [Ce+3] XQTIWNLDFPPCIU-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- 239000011163 secondary particle Substances 0.000 description 5
- 150000000703 Cerium Chemical class 0.000 description 4
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- UFPTUMDLYXIGGH-UHFFFAOYSA-L [Cl-].C(C)(=O)[O-].[Ce+2] Chemical compound [Cl-].C(C)(=O)[O-].[Ce+2] UFPTUMDLYXIGGH-UHFFFAOYSA-L 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- OZECDDHOAMNMQI-UHFFFAOYSA-H cerium(3+);trisulfate Chemical compound [Ce+3].[Ce+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OZECDDHOAMNMQI-UHFFFAOYSA-H 0.000 description 1
- MOOUSOJAOQPDEH-UHFFFAOYSA-K cerium(iii) bromide Chemical compound [Br-].[Br-].[Br-].[Ce+3] MOOUSOJAOQPDEH-UHFFFAOYSA-K 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002352 surface water Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
実施例による母粒子の表面に複数の補助粒子が形成された研磨粒子は、下記の方法を用いて製造した。セリウム(III)塩と超純水を2:1〜4:1の割合、例えば、セリウム(III)塩1kg〜4kgを超純水0.25kg〜2kgに混合してセリウム(III)水溶液を製造し、セリウム(IV)塩と超純水を1:500〜1:3000の割合、例えば、セリウム(IV)塩1g〜3gを超純水0.5kg〜9kgに混合してセリウム(IV)水溶液を製造した。セリウム(IV)水溶液と硝酸を1:1〜100:1、例えば、セリウム(IV)水溶液1kg〜5kgを硝酸0.1kg〜5kgに混合してセリウム(IV)混合液を製造した。そして、セリウム(III)水溶液とセリウム(IV)混合液を混合してセリウム混合液を製造した。また、アンモニアと超純水を1:2〜1:10の割合、例えば、アンモニア1kg〜5kgと超純水1kg〜50kgを不活性雰囲気下で反応容器にローディングした後、攪拌して塩基性水溶液を製造した。前記セリウム混合液を反応容器に投入して攪拌し、不活性雰囲気を維持した状態で常温から100℃以下まで、例えば、70℃〜90℃まで加熱して8時間以下の時間をかけて、例えば、1時間〜4時間熱処理を行った。このようにして熱処理を行って表面に突起が導入されていない母粒子混合液を製造した。
・実施例と比較例との比較
多面体構造の鋭い結晶面を有する従来例のセリア研磨粒子を含有するセリア懸濁液に脱イオン水を添加して希釈させ、硝酸(HNO3)またはアンモニア(NH4OH)を追加してpHを4、5、6にした。この結果物を十分に攪拌して比較例による研磨スラリーを製造した。
20:補助粒子
100:基板
110:トンネル絶縁膜
120:導電膜
130:絶縁膜
140:素子分離膜
Claims (18)
- 多面体結晶面を有する母粒子と、
前記母粒子の表面に形成され、成長されて外側に突出された複数の補助粒子と、
を含み、
前記母粒子及び前記補助粒子は同じ物質からなり、前記複数の補助粒子は、前記母粒子の角部からそれぞれ成長されており、
前記母粒子及び前記補助粒子はそれぞれセリア粒子を含む、研磨粒子。 - 前記補助粒子は、前記多面体結晶面において少なくとも3つの結晶面が遭遇する角部を中心に各結晶面の一部を被覆するように形成される請求項1に記載の研磨粒子。
- 隣り合う前記補助粒子は、互いに離れているか、あるいは、互いに接触する請求項2に記載の研磨粒子。
- 前記互いに接触する補助粒子の重合部の高さが、補助粒子の最大の高さの0%〜70%の範囲である請求項3に記載の研磨粒子。
- 前記母粒子の粒径に対する前記補助粒子の粒径の割合は、100:1〜5:1である請求項1に記載の研磨粒子。
- 平均粒径が6nm〜350nmである請求項5に記載の研磨粒子。
- 前記母粒子は、平均粒径が5nm〜300nmである請求項6に記載の研磨粒子。
- 前記補助粒子は、平均粒径が1nm〜50nmである請求項7に記載の研磨粒子。
- 被処理物を研磨する研磨スラリーであって、
研磨を行い、多面体結晶面を有する母粒子と、前記母粒子の表面から外側に向かって突出された複数の補助粒子とを含む研磨粒子と、
脱イオン水を含み、前記研磨粒子が分散される分散剤と、
を含有し、
前記母粒子及び前記補助粒子は同じ物質からなり、前記複数の補助粒子は、前記母粒子の角部からそれぞれ成長されており、
前記母粒子及び前記補助粒子はそれぞれセリア粒子を含む、研磨スラリー。 - 前記研磨粒子は、前記補助粒子が前記多面体結晶面において複数の結晶面が遭遇する角部から形成されて且つ成長されている請求項9に記載の研磨スラリー。
- 前記多面体結晶面の大きさに対する前記補助粒子の大きさの割合は、100:1〜5:1である請求項10に記載の研磨スラリー。
- 前記研磨粒子は、固形分を基準として0.1wt%〜5wt%含有されている請求項11に記載の研磨スラリー。
- 研磨を促す研磨加速剤を含み、
前記研磨加速剤は、研磨粒子の表面電位をマイナスに転換する陰イオン系低分子、陰イオン系高分子、ヒドロキシル酸及びアミノ酸を含む請求項9に記載の研磨スラリー。 - 前記研磨加速剤は、前記研磨粒子の1wt%重量を基準として0.01wt%〜0.1wt%含有されている請求項13に記載の研磨スラリー。
- 前記陰イオン系としては、シュウ酸、クエン酸、ポリスルホン酸、ポリアクリル酸、ポリメタクリル酸(Darvan C−N)、これらのコポリマー酸または塩のうちの少なくとも一種を含み、前記ヒドロキシル酸は、ヒドロキシ安息香酸、アスコルビン酸またはその塩のうちの少なくとも一種を含み、前記アミノ酸は、ピコリン酸、グルタミン酸、トリプトファン、アミノ酪酸またはその塩のうちの少なくとも一種を含む請求項13に記載の研磨スラリー。
- スラリーのpHを調節するpH調節剤を含み、
前記pH調節剤によってpHが4〜9に維持される請求項11または請求項13に記載の研磨スラリー。 - 基板の上にトンネル絶縁膜及び導電膜を形成するステップと、
前記導電膜と、トンネル絶縁膜及び基板の所定の領域を所定の深さにエッチングしてトレンチを形成するステップと、
前記トレンチが埋め込まれるように絶縁膜を形成するステップと、
前記導電膜が露出されるように前記絶縁膜を研磨するステップと、
を含み、
前記研磨ステップは、多面体結晶面を有する母粒子と、前記母粒子の表面に形成され且つ成長されて、外側に向かって突出された複数の補助粒子とを含む研磨粒子を含有する研磨スラリーを用いて行い、
前記研磨粒子は、前記母粒子及び前記補助粒子は同じ物質からなり、前記複数の補助粒子は、前記母粒子の角部からそれぞれ成長されており、前記母粒子及び前記補助粒子はそれぞれセリア粒子を含む、半導体素子の製造方法。 - 前記導電膜はポリシリコン膜を有し、前記絶縁膜は酸化膜系の物質を含む請求項17に記載の半導体素子の製造方法。
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Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2011306076B2 (en) | 2010-09-22 | 2015-05-07 | The Board Of Regents Of The University Of Texas System | Novel block copolymer and micelle compositions and methods of use thereof |
CN106103640B (zh) | 2014-03-20 | 2020-03-03 | 福吉米株式会社 | 研磨用组合物、研磨方法及基板的制造方法 |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
KR102630261B1 (ko) | 2014-10-17 | 2024-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
JP6563957B2 (ja) * | 2014-12-26 | 2019-08-21 | 花王株式会社 | 酸化珪素膜研磨用研磨液組成物 |
US9728545B2 (en) | 2015-04-16 | 2017-08-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing floating gate variation |
JP6393231B2 (ja) * | 2015-05-08 | 2018-09-19 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の研磨方法 |
JP6940495B2 (ja) * | 2015-10-30 | 2021-09-29 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法 |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
WO2017081835A1 (ja) * | 2015-11-10 | 2017-05-18 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及びその製造方法、並びに合成石英ガラス基板の研磨方法 |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
KR101823083B1 (ko) * | 2016-09-07 | 2018-01-30 | 주식회사 케이씨텍 | 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물 |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
EP3700990B1 (en) * | 2017-10-25 | 2023-03-29 | Saint-Gobain Ceramics & Plastics, Inc. | Composition for conducting material removal operations and method for forming same |
US20230041600A1 (en) | 2019-11-26 | 2023-02-09 | Rhodia Operations | Cerium based particles, process for producing the same and uses thereof in polishing |
IL292956A (en) * | 2019-11-26 | 2022-07-01 | Rhodia Operations | Liquid and powder dispersion of cerium-based core-shell particles, process for their production and use in polishing |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02243270A (ja) * | 1989-03-15 | 1990-09-27 | Takeo Oki | 被覆砥粒含有砥石およびその製法 |
JP3814311B2 (ja) | 1995-03-31 | 2006-08-30 | 豊田バンモップス株式会社 | 複合砥粒の製造方法 |
CN1245471C (zh) | 1996-09-30 | 2006-03-15 | 日立化成工业株式会社 | 氧化铈研磨剂以及基板的研磨方法 |
JPH11181403A (ja) | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
SG78405A1 (en) * | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
KR100475976B1 (ko) * | 1998-12-25 | 2005-03-15 | 히다치 가세고교 가부시끼가이샤 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
JP3975047B2 (ja) | 2000-04-21 | 2007-09-12 | 泰弘 谷 | 研磨方法 |
JP4231632B2 (ja) * | 2001-04-27 | 2009-03-04 | 花王株式会社 | 研磨液組成物 |
JP2005500173A (ja) * | 2001-08-20 | 2005-01-06 | サムソン コーニング カンパニー,リミテッド | シリカ−コーティングされたセリアを含む研磨スラリー |
US20060032836A1 (en) * | 2001-11-16 | 2006-02-16 | Ferro Corporation | Methods of controlling the properties of abrasive particles for use in chemical-mechanical polishing slurries |
EP1405889A1 (en) * | 2002-02-20 | 2004-04-07 | Nihon Micro Coating Co., Ltd. | Polishing slurry |
US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
US20060246723A1 (en) * | 2002-12-31 | 2006-11-02 | Sumitomo Mitsubishi Silicon Corporation | Slurry composition for chemical mechanical polishing, method for planarization of surface of semiconductor element using the same, and method for controlling selection ratio of slurry composition |
KR100582771B1 (ko) * | 2004-03-29 | 2006-05-22 | 한화석유화학 주식회사 | 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리 |
KR100640583B1 (ko) * | 2004-08-16 | 2006-10-31 | 삼성전자주식회사 | 산화세륨 연마 입자 및 그 제조 방법과 cmp용 슬러리조성물 및 그 제조 방법과 이들을 이용한 기판 연마 방법 |
TW200628596A (en) * | 2004-12-01 | 2006-08-16 | Hitachi Chemical Co Ltd | Slurry for chemical mechanical polishing, composite particle having inorganic particle coating, method for preparation thereof, chemical mechanical polishing method and method for manufacturing electronic device |
KR20080011044A (ko) * | 2006-07-28 | 2008-01-31 | 주식회사 엘지화학 | 산화세륨 분말, 그 제조방법, 및 이를 포함하는cmp슬러리 |
JP5069109B2 (ja) * | 2005-06-29 | 2012-11-07 | スパンション エルエルシー | 半導体装置およびその製造方法 |
US7687401B2 (en) * | 2006-05-01 | 2010-03-30 | Ferro Corporation | Substantially spherical composite ceria/titania particles |
US7670679B2 (en) * | 2006-05-30 | 2010-03-02 | General Electric Company | Core-shell ceramic particulate and method of making |
EP2242717A1 (en) * | 2008-02-08 | 2010-10-27 | Umicore | Doped ceria abrasives with controlled morphology and preparation thereof |
US7993420B2 (en) * | 2008-02-12 | 2011-08-09 | Saint-Gobain Ceramics & Plastics, Inc. | Ceria material and method of forming same |
EP2105256A1 (en) * | 2008-03-28 | 2009-09-30 | Cedric Sheridan | Method and apparatus for forming aggregate abrasive grains for use in the production of abrading or cutting tools |
JP5088453B2 (ja) * | 2009-12-10 | 2012-12-05 | 日立化成工業株式会社 | Cmp研磨液、基板の研磨方法及び電子部品 |
KR101245276B1 (ko) * | 2010-03-12 | 2013-03-19 | 주식회사 엘지화학 | 산화세륨 연마재의 재생 방법 |
JP5554121B2 (ja) | 2010-03-31 | 2014-07-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
JP5564461B2 (ja) | 2010-10-12 | 2014-07-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US9120200B2 (en) * | 2010-12-28 | 2015-09-01 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing slurry including zirconia particles and a method of using the polishing slurry |
CN103814102B (zh) * | 2011-09-20 | 2017-12-05 | 堺化学工业株式会社 | 玻璃研磨用复合颗粒 |
JP2013104023A (ja) * | 2011-11-15 | 2013-05-30 | Tosoh Corp | ジルコニア研磨剤及びその製造方法 |
JP2013129056A (ja) * | 2011-11-21 | 2013-07-04 | Tosoh Corp | 研磨用ジルコニア複合粉末及びその製造方法 |
JP2013111725A (ja) * | 2011-11-30 | 2013-06-10 | Admatechs Co Ltd | 研磨材およびその製造方法 |
US10557058B2 (en) * | 2012-02-21 | 2020-02-11 | Hitachi Chemical Company, Ltd. | Polishing agent, polishing agent set, and substrate polishing method |
WO2014017531A1 (ja) * | 2012-07-25 | 2014-01-30 | コニカミノルタ株式会社 | 研磨材再生方法 |
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