JP5960426B2 - 半導体素子及び半導体素子の製造方法 - Google Patents
半導体素子及び半導体素子の製造方法 Download PDFInfo
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- JP5960426B2 JP5960426B2 JP2011275908A JP2011275908A JP5960426B2 JP 5960426 B2 JP5960426 B2 JP 5960426B2 JP 2011275908 A JP2011275908 A JP 2011275908A JP 2011275908 A JP2011275908 A JP 2011275908A JP 5960426 B2 JP5960426 B2 JP 5960426B2
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- 239000000758 substrate Substances 0.000 claims description 35
- 150000004767 nitrides Chemical class 0.000 description 25
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 9
- 230000005496 eutectics Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
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- 230000003068 static effect Effects 0.000 description 4
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- 229910002704 AlGaN Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
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- 230000007480 spreading Effects 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Description
前記透明導電膜を形成する。
Claims (5)
- 第1導電型の第1の半導体層と、該第1の半導体層の上に形成される活性層と、該活性層の上に形成される第2導電型の第2の半導体層とを含む半導体積層と、
前記半導体積層の一方の主面上に形成され、開口部を有する透明導電膜と、
前記透明導電膜の開口部から露出する前記半導体積層の一方の主面上の一部に形成される電極パッドと、
前記透明導電膜の開口部から露出する前記半導体積層の一方の主面上の他の一部に、前記電極パッドと連続し、前記透明導電膜の一部に重なるように形成される配線電極とを有し、
前記透明導電膜と前記半導体積層との接触抵抗が、前記配線電極と前記半導体積層との接触抵抗より高く、
前記透明導電膜と前記半導体積層との接触抵抗は、1.0×10 −1 Ωcm 2 以上、1.0×10 2 Ωcm 2 以下であり、
前記配線電極が前記透明導電膜に重なる部分の幅が、前記電極パッドから離れるにしたがい増加する、
半導体素子。 - 前記透明導電膜は、ITOで構成され、50nm以下の膜厚を有する請求項1記載の半導体素子。
- 前記配線電極が前記透明電極膜に重なる部分の幅が、前記電極パッドから最も離れた部分において、前記配線電極の厚さ以上である請求項1又は2に記載の半導体素子。
- (a)成長基板を準備する工程と、
(b)前記成長基板上に、第1導電型の第1の半導体層と、該第1の半導体層の上に形成される活性層と、該活性層の上に形成される第2導電型の第2の半導体層とを含む半導体積層を成長する工程と、
(c)前記成長基板を前記半導体積層から剥離する工程と、
(d)前記工程(c)で成長基板を剥離することにより露出する前記半導体積層の表面に、開口部を有する透明導電膜を形成する工程と、
(e)前記透明導電膜の開口部から露出する前記半導体積層の表面の一部上に、電極パッドを形成するとともに、前記透明導電膜の開口部から露出する前記半導体積層の表面の他の一部上に、該電極パッドと連続し、前記透明導電膜の一部に重なるように配線電極を形成する工程とを有し、
前記工程(d)は、前記透明導電膜と前記半導体積層との接触抵抗が、前記配線
電極と前記半導体積層との接触抵抗より高く、前記透明導電膜と前記半導体積層との接触抵抗は、1.0×10 −1 Ωcm 2 以上、1.0×10 2 Ωcm 2 以下であり、 前記配線電極が前記透明導電膜に重なる部分の幅が、前記電極パッドから離れるにしたがい増加するように、前記透明導電膜を形成する、
半導体素子の製造方法。 - 前記工程(d)は、前記配線電極が前記透明電極膜に重なる部分の幅が、前記電極パッドから最も離れた部分において、前記配線電極の厚さ以上となるように、前記透明導電膜の開口部を形成する請求項4記載の半導体素子の製造方法。
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JP2011275908A JP5960426B2 (ja) | 2011-12-16 | 2011-12-16 | 半導体素子及び半導体素子の製造方法 |
US13/712,194 US9070836B2 (en) | 2011-12-16 | 2012-12-12 | Semiconductor light-emitting device |
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JP2011275908A JP5960426B2 (ja) | 2011-12-16 | 2011-12-16 | 半導体素子及び半導体素子の製造方法 |
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JP2013125953A JP2013125953A (ja) | 2013-06-24 |
JP5960426B2 true JP5960426B2 (ja) | 2016-08-02 |
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Families Citing this family (8)
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US8809897B2 (en) | 2011-08-31 | 2014-08-19 | Micron Technology, Inc. | Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods |
US9490239B2 (en) * | 2011-08-31 | 2016-11-08 | Micron Technology, Inc. | Solid state transducers with state detection, and associated systems and methods |
TWI453948B (zh) * | 2012-03-12 | 2014-09-21 | Univ Chang Gung | The structure of the press - fit type flip - chip light emitting element and its making method |
JP6040007B2 (ja) | 2012-11-14 | 2016-12-07 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
JP6621990B2 (ja) * | 2014-01-16 | 2019-12-18 | スタンレー電気株式会社 | 紫外発光ダイオード |
JP2016134439A (ja) * | 2015-01-16 | 2016-07-25 | 株式会社東芝 | 半導体発光素子 |
JP6408440B2 (ja) * | 2015-08-07 | 2018-10-17 | アルプス電気株式会社 | 入力装置 |
WO2021121603A1 (en) * | 2019-12-19 | 2021-06-24 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device |
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JPH04239185A (ja) | 1991-01-11 | 1992-08-27 | Eastman Kodak Japan Kk | 発光ダイオード |
US6163036A (en) | 1997-09-15 | 2000-12-19 | Oki Data Corporation | Light emitting element module with a parallelogram-shaped chip and a staggered chip array |
JP3659098B2 (ja) | 1999-11-30 | 2005-06-15 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
US6885035B2 (en) | 1999-12-22 | 2005-04-26 | Lumileds Lighting U.S., Llc | Multi-chip semiconductor LED assembly |
CN100411209C (zh) | 2004-01-26 | 2008-08-13 | 奥斯兰姆奥普托半导体有限责任公司 | 具有电流扩展结构的薄膜led |
JP2008192782A (ja) | 2007-02-05 | 2008-08-21 | Toyota Central R&D Labs Inc | 電極及びそれを有するiii族窒化物系化合物半導体発光素子 |
JP5024247B2 (ja) * | 2008-09-12 | 2012-09-12 | 日立電線株式会社 | 発光素子 |
JP2010080817A (ja) * | 2008-09-29 | 2010-04-08 | Hitachi Cable Ltd | 発光素子 |
JP5276959B2 (ja) * | 2008-11-19 | 2013-08-28 | 昭和電工株式会社 | 発光ダイオード及びその製造方法、並びにランプ |
JP5497301B2 (ja) * | 2009-01-29 | 2014-05-21 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
JP2011040425A (ja) | 2009-08-06 | 2011-02-24 | Stanley Electric Co Ltd | 半導体発光装置及び半導体発光装置の製造方法 |
JP5392611B2 (ja) * | 2009-09-14 | 2014-01-22 | スタンレー電気株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
KR100974777B1 (ko) * | 2009-12-11 | 2010-08-06 | 엘지이노텍 주식회사 | 발광 소자 |
JP2011142231A (ja) * | 2010-01-07 | 2011-07-21 | Hitachi Cable Ltd | 半導体発光素子及びledランプ、並びに半導体発光素子の製造方法 |
JP5545848B2 (ja) | 2010-06-24 | 2014-07-09 | シチズン電子株式会社 | 半導体発光装置 |
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US20130153951A1 (en) | 2013-06-20 |
JP2013125953A (ja) | 2013-06-24 |
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