JP5948668B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP5948668B2 JP5948668B2 JP2014516649A JP2014516649A JP5948668B2 JP 5948668 B2 JP5948668 B2 JP 5948668B2 JP 2014516649 A JP2014516649 A JP 2014516649A JP 2014516649 A JP2014516649 A JP 2014516649A JP 5948668 B2 JP5948668 B2 JP 5948668B2
- Authority
- JP
- Japan
- Prior art keywords
- heat radiating
- radiating plate
- exterior body
- semiconductor device
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1029—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Thermal Sciences (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
図1は、本開示の第1実施形態に係る半導体装置の概略的な断面構成を示している。
図7(b)に、第1実施形態の一変形例として、外装ケース端子41aを有する外装ケース41を接着材により固着した状態の半導体装置を示す。本変形例としての半導体装置は、接続ネジに代えて、接着剤により外装ケース41を第2放熱板25に固定している。本変形例としての半導体装置について、図7(b)を参照しながら説明する。
図8は、本開示の第2実施形態に係る半導体装置の概略的な断面構成を示している。
1,41,51 外装ケース
1a,41a,51a 外装ケース端子
2,52 ブロックモジュール
3,53 制御基板
4,54 主回路端子
5,55 制御端子
7,57 突起部
8 制御素子
9 受動部品
10 リードフレーム
11 パワー半導体素子
11a IGBT
11b ダイオード
12 ソース電極
13 ゲート電極
14 Al線
15 樹脂材
16 絶縁層
17 放熱板
20 第1貫通孔
21 カシメ接合部
22 ネジ止め貫通孔
23 接着材
25 第2放熱板
53b 貫通孔
60,61 接続ネジ
Claims (15)
- パワー半導体素子及び第1放熱板を内部に有し、主回路端子及び制御端子が引き出されたブロックモジュールと、
前記制御端子に接続された制御基板と、
前記ブロックモジュール及び前記制御基板を収容する外装体と、
接続ネジにより前記外装体が固定された第2放熱板と、を備え、
前記接続ネジは、前記第2放熱板の表面の法線に対して傾斜角度θで傾斜して挿入されており、
前記主回路端子は、前記外装体に形成された接続端子と固定されており、
前記外装体は、前記第2放熱板に固定されていない状態の前記外装体の底面に該外装体の外側から内側に向けて上方に角度θで傾斜する傾斜面を有し、前記外装体は、前記第2放熱板に固定された状態では固定されていない状態における前記傾斜面が第2放熱板と接触しており、
前記ブロックモジュールの底面と前記第2放熱板の表面とは密着している、
半導体装置。 - 前記接続ネジにより、前記第1放熱板と前記第2放熱板とが密着している、
請求項1に記載の半導体装置。 - 前記外装体の平面形状は四角形であり、
前記外装体において前記接続ネジにより固定された位置は、前記外装体の4辺のうちの対向する2辺である、
請求項1又は2に記載の半導体装置。 - 前記外装体は、その側面が前記第2放熱板の表面の法線に対して傾斜角度θで傾いて固定された、
請求項1から3のいずれか1項に記載の半導体装置。 - 前記外装体が前記第2放熱板に固定されていない状態において、前記外装体における前記傾斜面の内側の対向する端部同士を結ぶ仮想線が、前記ブロックモジュール内の前記第1放熱板の内部を通る位置に配置される、
請求項1から4のいずれか1項に記載の半導体装置。 - 前記傾斜角度θは、3°以上且つ10°以下である、
請求項1から5のいずれか1項に記載の半導体装置。 - 前記外装体は、前記外装体に形成された貫通孔を介して前記接続ネジにより前記第2放熱板に固定された、
請求項1から6のいずれか1項に記載の半導体装置。 - 前記ブロックモジュールの前記主回路端子と前記外装体の接続端子とは、カシメ接合された、
請求項1から7のいずれか1項に記載の半導体装置。 - 前記外装体は、前記主回路端子に形成された貫通孔及び前記外装体の接続端子に形成された貫通孔を介して前記接続ネジにより前記第2放熱板に固定された、
請求項1から7のいずれか1項に記載の半導体装置。 - パワー半導体素子及び第1放熱板を内部に有し、主回路端子及び制御端子が引き出されたブロックモジュールと、
前記制御端子に接続された制御基板と、
前記ブロックモジュール及び前記制御基板を収容する外装体と、
前記外装体が固定された第2放熱板と、を備え、
前記第1放熱板と前記第2放熱板とを平行に配置した場合における前記外装体の一面は、
前記外装体が前記第2放熱板に固定されていない状態において、前記第2放熱板の表面に対して傾斜角度θの角度を有し、
前記外装体が前記第2放熱板に固定された状態において、前記第2放熱板の表面に対して平行であり、
前記主回路端子は、前記外装体に形成された接続端子と固定されており、
前記外装体は、前記第2放熱板に固定されていない状態の前記外装体の底面に該外装体の外側から内側に向けて上方に角度θで傾斜する傾斜面を有し、前記外装体は、前記第2放熱板に固定された状態では固定されていない状態における前記傾斜面が第2放熱板と接触しており、
前記ブロックモジュールの底面と前記第2放熱板の表面とは密着している、
半導体装置。 - パワー半導体素子及び第1放熱板を内部に有すると共に主回路端子及び制御端子が引き出されたブロックモジュールと、前記制御端子に接続される制御基板と、前記ブロックモジュール及び前記制御基板を収容すると共に前記主回路端子が接合された接続端子を有する外装体と、を準備し、
一面に傾斜角度θを有する前記外装体を、第2放熱板の表面の法線に対して傾斜角度θで挿入される接続ネジにより、前記第2放熱板に固定し、
前記外装体は、前記第2放熱板に固定されていない状態の前記外装体の底面に該外装体の外側から内側に向けて上方に角度θで傾斜する傾斜面を有し、前記外装体は、前記第2放熱板に固定された状態では固定されていない状態における前記傾斜面が第2放熱板と接触しており、
前記ブロックモジュールの底面と前記第2放熱板の表面とは密着している、
半導体装置の製造方法。 - 前記外装体の平面形状は四角形であり、
前記接続ネジは、前記外装体の4辺のうちの対向する2辺を固定する、
請求項11に記載の半導体装置の製造方法。 - 前記外装体が前記第2放熱板に固定される前の状態において、前記外装体における前記傾斜面の内側の対向する端部同士を結ぶ仮想線が、前記ブロックモジュールの前記第1放熱板の内部を通る位置に配置された、
請求項11又は12に記載の半導体装置の製造方法。 - 前記傾斜角度θは、3°以上且つ10°以下である、
請求項11から13のいずれか1項に記載の半導体装置の製造方法。 - 前記外装体は、前記主回路端子に形成された貫通孔及び前記外装体の接続端子に形成された貫通孔を介して前記接続ネジにより前記第2放熱板に固定される、
請求項11から14のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014516649A JP5948668B2 (ja) | 2012-05-22 | 2013-04-26 | 半導体装置及びその製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012116187 | 2012-05-22 | ||
JP2012116187 | 2012-05-22 | ||
JP2014516649A JP5948668B2 (ja) | 2012-05-22 | 2013-04-26 | 半導体装置及びその製造方法 |
PCT/JP2013/002866 WO2013175714A1 (ja) | 2012-05-22 | 2013-04-26 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013175714A1 JPWO2013175714A1 (ja) | 2016-01-12 |
JP5948668B2 true JP5948668B2 (ja) | 2016-07-06 |
Family
ID=49623429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014516649A Active JP5948668B2 (ja) | 2012-05-22 | 2013-04-26 | 半導体装置及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9572291B2 (ja) |
EP (1) | EP2854174B1 (ja) |
JP (1) | JP5948668B2 (ja) |
CN (1) | CN104285294B (ja) |
WO (1) | WO2013175714A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5542765B2 (ja) * | 2011-09-26 | 2014-07-09 | 日立オートモティブシステムズ株式会社 | パワーモジュール |
JP5871076B2 (ja) | 2012-09-13 | 2016-03-01 | 富士電機株式会社 | 半導体装置、半導体装置に対する放熱部材の取り付け方法及び半導体装置の製造方法 |
JP6459418B2 (ja) * | 2014-11-13 | 2019-01-30 | 富士電機株式会社 | 半導体装置およびその製造方法 |
CN106298688B (zh) * | 2015-05-28 | 2018-11-06 | 台达电子工业股份有限公司 | 封装型功率电路模块 |
JP6455364B2 (ja) | 2015-08-28 | 2019-01-23 | 三菱電機株式会社 | 半導体装置、インテリジェントパワーモジュールおよび電力変換装置 |
WO2017040787A1 (en) * | 2015-09-01 | 2017-03-09 | Macom Technology Solutions Holdings, Inc. | Air cavity package |
ITUB20153344A1 (it) * | 2015-09-02 | 2017-03-02 | St Microelectronics Srl | Modulo di potenza elettronico con migliorata dissipazione termica e relativo metodo di fabbricazione |
JP6631114B2 (ja) * | 2015-09-17 | 2020-01-15 | 富士電機株式会社 | 半導体装置及び半導体装置の計測方法 |
JP6759784B2 (ja) * | 2016-07-12 | 2020-09-23 | 三菱電機株式会社 | 半導体モジュール |
US10804253B2 (en) * | 2016-08-10 | 2020-10-13 | Mitsubishi Electric Corporation | Semiconductor device |
JP6395164B1 (ja) * | 2017-04-20 | 2018-09-26 | 三菱電機株式会社 | 電力変換装置 |
DE112018003850B4 (de) * | 2017-07-28 | 2023-04-27 | Mitsubishi Electric Corporation | Halbleitereinheit und halbleitermodul |
CN109906509B (zh) | 2017-10-10 | 2022-10-28 | 新电元工业株式会社 | 模块以及电力转换装置 |
US11715679B2 (en) * | 2019-10-09 | 2023-08-01 | Texas Instruments Incorporated | Power stage package including flexible circuit and stacked die |
US11264311B2 (en) * | 2019-10-11 | 2022-03-01 | Semiconductor Components Industries, Llc | Clips for semiconductor package and related methods |
JP6928129B2 (ja) * | 2020-01-17 | 2021-09-01 | 三菱電機株式会社 | 電力変換装置 |
JP7286582B2 (ja) * | 2020-03-24 | 2023-06-05 | 株式会社東芝 | 半導体装置 |
US20220396154A1 (en) * | 2021-06-14 | 2022-12-15 | Panasonic Intellectual Property Management Co., Ltd. | Vehicle mounted electric power converter |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04233752A (ja) | 1990-12-28 | 1992-08-21 | Shinko Electric Ind Co Ltd | 電子部品用パッケージ |
JP3110657B2 (ja) * | 1995-08-02 | 2000-11-20 | 松下電子工業株式会社 | 樹脂封止型半導体装置およびその製造方法 |
US6147869A (en) * | 1997-11-24 | 2000-11-14 | International Rectifier Corp. | Adaptable planar module |
JP3674333B2 (ja) * | 1998-09-11 | 2005-07-20 | 株式会社日立製作所 | パワー半導体モジュール並びにそれを用いた電動機駆動システム |
JP4054137B2 (ja) * | 1999-06-03 | 2008-02-27 | 株式会社東京アールアンドデー | パワー半導体素子の給電及び放熱装置 |
JP4027558B2 (ja) * | 2000-03-03 | 2007-12-26 | 三菱電機株式会社 | パワーモジュール |
JP4218193B2 (ja) * | 2000-08-24 | 2009-02-04 | 三菱電機株式会社 | パワーモジュール |
US7061080B2 (en) * | 2001-06-11 | 2006-06-13 | Fairchild Korea Semiconductor Ltd. | Power module package having improved heat dissipating capability |
US6974460B2 (en) * | 2001-09-14 | 2005-12-13 | Stryker Spine | Biased angulation bone fixation assembly |
JP4177571B2 (ja) * | 2001-09-20 | 2008-11-05 | 三菱電機株式会社 | 半導体装置 |
JP3813098B2 (ja) * | 2002-02-14 | 2006-08-23 | 三菱電機株式会社 | 電力用半導体モジュール |
JP3764687B2 (ja) * | 2002-02-18 | 2006-04-12 | 三菱電機株式会社 | 電力半導体装置及びその製造方法 |
JP3828036B2 (ja) * | 2002-03-28 | 2006-09-27 | 三菱電機株式会社 | 樹脂モールド型デバイスの製造方法及び製造装置 |
JP3740116B2 (ja) * | 2002-11-11 | 2006-02-01 | 三菱電機株式会社 | モールド樹脂封止型パワー半導体装置及びその製造方法 |
WO2004093187A1 (ja) * | 2003-04-16 | 2004-10-28 | Fujitsu Limited | 電子部品パッケージ、電子部品パッケージ組立体およびプリント基板ユニット |
JP4391407B2 (ja) * | 2004-12-20 | 2009-12-24 | 三菱電機株式会社 | 制御装置一体型回転電機 |
US7766943B1 (en) * | 2005-08-11 | 2010-08-03 | Medicine Lodge Inc. | Modular percutaneous spinal fusion system and method |
CN200990577Y (zh) * | 2006-08-28 | 2007-12-12 | 中山大洋电机股份有限公司 | 一种直流无刷电机的控制器结构 |
EP1914470B1 (en) * | 2006-10-20 | 2016-05-18 | OSRAM GmbH | Semiconductor lamp |
JP4934559B2 (ja) * | 2007-09-27 | 2012-05-16 | オンセミコンダクター・トレーディング・リミテッド | 回路装置およびその製造方法 |
TWI402952B (zh) * | 2007-09-27 | 2013-07-21 | Sanyo Electric Co | 電路裝置及其製造方法 |
JP2009099339A (ja) * | 2007-10-16 | 2009-05-07 | Mitsubishi Electric Corp | 電子機器の配線接続構造及び方法 |
US8427059B2 (en) * | 2008-07-31 | 2013-04-23 | Toshiba Lighting & Technology Corporation | Lighting device |
JP5435286B2 (ja) * | 2009-06-24 | 2014-03-05 | 株式会社デンソー | 駆動装置 |
JP5177711B2 (ja) * | 2010-05-21 | 2013-04-10 | 株式会社デンソー | 電動装置 |
JP5692575B2 (ja) * | 2010-12-28 | 2015-04-01 | 株式会社デンソー | 駆動装置 |
JP5351907B2 (ja) * | 2011-01-13 | 2013-11-27 | アイシン・エィ・ダブリュ株式会社 | 半導体装置 |
US20120250335A1 (en) * | 2011-03-08 | 2012-10-04 | Panasonic Corporation | Illumination apparatus and fan unit for illumination apparatus |
US8304871B2 (en) * | 2011-04-05 | 2012-11-06 | Texas Instruments Incorporated | Exposed die package for direct surface mounting |
JP5692593B2 (ja) * | 2011-05-11 | 2015-04-01 | 株式会社デンソー | 駆動装置 |
-
2013
- 2013-04-26 EP EP13793424.6A patent/EP2854174B1/en active Active
- 2013-04-26 WO PCT/JP2013/002866 patent/WO2013175714A1/ja active Application Filing
- 2013-04-26 JP JP2014516649A patent/JP5948668B2/ja active Active
- 2013-04-26 US US14/395,411 patent/US9572291B2/en active Active
- 2013-04-26 CN CN201380024660.7A patent/CN104285294B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20150116945A1 (en) | 2015-04-30 |
EP2854174B1 (en) | 2019-02-20 |
CN104285294B (zh) | 2016-11-09 |
EP2854174A1 (en) | 2015-04-01 |
JPWO2013175714A1 (ja) | 2016-01-12 |
CN104285294A (zh) | 2015-01-14 |
US9572291B2 (en) | 2017-02-14 |
WO2013175714A1 (ja) | 2013-11-28 |
EP2854174A4 (en) | 2015-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5948668B2 (ja) | 半導体装置及びその製造方法 | |
JP6233507B2 (ja) | パワー半導体モジュールおよび複合モジュール | |
JP6164364B2 (ja) | 半導体装置 | |
US10163752B2 (en) | Semiconductor device | |
JP6218898B2 (ja) | 電力用半導体装置 | |
JP5895220B2 (ja) | 半導体装置の製造方法 | |
JP2016018866A (ja) | パワーモジュール | |
US20150270207A1 (en) | Semiconductor module package and method of manufacturing the same | |
CN109698179B (zh) | 半导体装置及半导体装置的制造方法 | |
WO2019064775A1 (ja) | 半導体装置およびその製造方法 | |
JP2016181536A (ja) | パワー半導体装置 | |
JP6200759B2 (ja) | 半導体装置およびその製造方法 | |
JP2001284524A (ja) | 電力用半導体モジュール | |
JP6095303B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US9099451B2 (en) | Power module package and method of manufacturing the same | |
US8810014B2 (en) | Semiconductor package including conductive member disposed between the heat dissipation member and the lead frame | |
JP2012209470A (ja) | 半導体装置、半導体装置モジュール及び半導体装置の製造方法 | |
JP5619232B2 (ja) | 半導体装置および電極用部材の製造方法 | |
JP2013157485A (ja) | 半導体装置とその製造方法 | |
JP4861200B2 (ja) | パワーモジュール | |
KR102378171B1 (ko) | 커플드 반도체 패키지 | |
JP6771581B2 (ja) | 半導体モジュール及び半導体装置 | |
JP5525856B2 (ja) | 半導体モジュール | |
JP2015122429A (ja) | 電子装置 | |
JP2016039264A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160426 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160518 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5948668 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |