JP5937696B2 - 改良型発光デバイス及び発光方法 - Google Patents
改良型発光デバイス及び発光方法 Download PDFInfo
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- JP5937696B2 JP5937696B2 JP2014548830A JP2014548830A JP5937696B2 JP 5937696 B2 JP5937696 B2 JP 5937696B2 JP 2014548830 A JP2014548830 A JP 2014548830A JP 2014548830 A JP2014548830 A JP 2014548830A JP 5937696 B2 JP5937696 B2 JP 5937696B2
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- Engineering & Computer Science (AREA)
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Description
本願は2011年12月23日に出願された米国特許出願第13/336,540号に基づく優先権を主張し、同出願の開示は、その全体が引用により本明細書に援用される。
[技術分野]
本明細書にて開示される発明主題は、広くは発光デバイス及び発光方法に関する。より詳細には、本明細書に開示される発明主題は、デバイス内において、反射率を高め、熱性能を向上させ、かつ、接着性を向上させることによって、輝度を高めた発光デバイス及び発光方法に関する。
[背景技術]
発光ダイオード(LED)等の発光デバイスは、白色光(例えば,白色又は近白色として知覚される)を提供するパッケージで利用可能であり、また、白熱灯、蛍光灯、及びメタルハライド高輝度放電(HID)灯製品の代替品として開発されている。LEDデバイスの代表例は、少なくとも1つのLEDチップを有するデバイスを備え、LEDチップの一部は、例えばイットリウム・アルミニウム・ガーネット(YAG)等の蛍光物質で被覆することが可能である。蛍光物質の被覆によって、1つ以上のLEDチップから放出された光を白色光に変換することができる。例えば、LEDチップは所望の波長の光を放出可能であるが、蛍光物質はピーク波長が約550nmの黄色の蛍光を発することが可能である。観察者は、複数の光放出の混合を白色光として知覚する。蛍光物質によって変換された白色光の代わりとして、それぞれが赤色、緑色、及び青色(RGB)の波長の複数の発光デバイスを1つのデバイス又はパッケージ内で組み合わせて、白色として知覚される光を生成することができる。
[概要]
本開示に従って、産業用及び商業用の照明製品を含む様々な用途に十分に適した、新規な発光デバイス及び発光方法が提供される。したがって、本明細書の開示の目的は、デバイス内の反射率を高めることに一部起因して、改良されたより高輝度の発光デバイスを提供することにある。本開示の別の目的は、デバイスのサブマウントの1つ以上の層間の接着性を向上させたデバイスを提供することにある。
ベストモードを含む本発明主題の、当業者への全面的かつ実施可能な程度の開示を、添付図面の参照を含む、明細書の以下の記述においてより詳細に行う。
ここで、本明細書の発明主題の実施可能な態様又は実施形態を詳細に述べるとともに、このうち1つ以上の例を各図に示す。各例は本発明主題を説明するために示されるものであり、本発明をこれらに限定するものではない。実際、一実施形態の一部として図示又は記述される特徴は、別の実施形態で使用することにより、さらに別の実施形態を生じさせることが可能である。本明細書にて開示及び説明された本発明主題はこのような改変や変形を包含することが意図されている。
本発明を限定しない一態様において、伝導性パッド30は、約6.568mmの半径及び約135.5mm2の面積を有することができる。よって、1つのLEDチップ25の面積と伝導性パッド30との面積の比率は約0.0027以下とすることができる。一態様において、1つのLEDチップ25の面積と伝導性パッド30の面積との比率は約0.0018以下とすることができる。他の態様では、比率は約0.0012以下とすることができる。以下の表2では、種々のLED25のチップサイズと伝導性パッド30の面積を列挙している。LED25は、伝導性パッドの面積と比べると小さい、つまり伝導性パッドの面積の約0.0027倍以下のチップを備えることができる。しかしながら、任意のチップサイズを使用することができる。
単一の発光領域の上方に設置面積がより小さいLED25を多数用いることにより、発光領域16の一部の上方にLED25を1つ以上の均一なパターンで配列可能であるため、高輝度等の所望の光学的特性に加えてより均一な光出力を効果的に可能にする。LED25のこの集中したパターンによって、発光を集中させることが可能になる。一態様において、本明細書で説明した1つ以上のパターンにおけるLED25の密集度又は間隔は、隣接するLED25によって光が吸収又は遮断されないように調整することができる。すなわち、本明細書で開示されるLED25のパターン及び配列は、近接する又は隣接するLED25により吸収される光の量を最少に抑えることにより、光抽出を向上させてもよい。1ストリングあたりのLED25の数は、LEDデバイスが低電圧から高電圧まで動作可能となることを可能にする。例示目的で、4つのパターンが図示されてきた。しかしながら、LED25の任意の好適なパターンが想定される。LED25の各ストリングは、単一のパターンを含んでいてもよく、2つ以上のパターンの組み合わせを含んでいてもよい。
Claims (31)
- 1つ以上の発光ダイオード(LED)を支持するサブマウントを備えた発光デバイスであって、前記サブマウントが、
誘電体層と、
前記誘電体層の上に配置され、かつ、前記1つ以上のLEDから離間した導電性配線を含む、伝導層と、
前記伝導層の上に配置された反射層と、
前記反射層および前記伝導層を貫通する少なくとも1つの穴と、
前記穴内、前記誘電体層上、及び前記導電性配線の側壁にソルダーレジストの少なくとも一部が配置されるように前記反射層の上に配置され、かつ、反射材料を含む、ソルダーレジスト層と
を備える発光デバイス。 - 前記穴の一部は前記伝導層の表面上で終端する、請求項1に記載の発光デバイス。
- 前記反射層及び前記伝導層が前記穴の側壁を構成する、請求項1又は2に記載の発光デバイス。
- 前記サブマウントはさらに、前記反射層と前記伝導層との間に配置されたバリア層を備える、請求項1に記載の発光デバイス。
- 前記伝導層が銅(Cu)を含み、前記反射層が銀(Ag)を含み、前記バリア層がニッケル(Ni)を含む、請求項4に記載の発光デバイス。
- 前記伝導層は粗面テクスチャを備える、請求項1に記載の発光デバイス。
- 前記反射層に複数の穴が配置されている、請求項1に記載の発光デバイス。
- 前記少なくとも1つの穴は、約0.2〜500マイクロメートル(μm)の範囲にある深さを備える、請求項1〜7のいずれか一項に記載の発光デバイス。
- 1つ以上の発光ダイオードを備える、請求項1〜8のいずれか一項に記載の発光デバイス。
- 1つ以上の発光ダイオード(LED)を支持するサブマウントを提供する工程を含む、発光デバイスを提供する方法であって、前記サブマウントを提供する工程が、
誘電体層を提供する工程と、
前記誘電体層の上に、前記1つ以上のLEDから離間した導電性配線を有する伝導層を堆積する工程と、
前記伝導層の上に反射層を堆積する工程と、
前記反射層及び前記伝導層を貫通する少なくとも1つの穴を形成する工程と、
前記少なくとも1つの穴内、前記誘電体層上、及び前記導電性配線の側壁にソルダーレジストの少なくとも一部が配置されるように、前記反射層の上に、反射材料を含むソルダーレジスト層を堆積する工程と
を含む方法。 - 前記伝導層を堆積する工程は、銅(Cu)層を堆積する工程を含む、請求項10に記載の方法。
- 前記反射層を堆積する工程は、銀(Ag)層を堆積する工程を含む、請求項10又は11に記載の方法。
- 前記伝導層と前記反射層との間にバリア層を堆積する工程をさらに含む、請求項10〜12のいずれか一項に記載の方法。
- 前記少なくとも1つの穴を形成する工程は、前記穴を化学的にエッチングする工程を含む、請求項10〜13のいずれか一項に記載の方法。
- 前記少なくとも1つの穴を形成する工程は、前記穴の一部が前記伝導層の上面で終端するように前記反射層をエッチングする工程を含む、請求項10〜14のいずれか一項に記載の方法。
- 前記反射層及び前記伝導層に複数の穴を形成する工程をさらに含む、請求項10〜15のいずれか一項に記載の方法。
- 前記少なくとも1つの穴を形成する工程は、約0.2〜500マイクロメートル(μm)の範囲にある深さを有する少なくとも1つの穴を化学的にエッチングする工程を含む、請求項10〜16のいずれか一項に記載の方法。
- サブマウントと、
前記サブマウントの上方に配置された複数の発光ダイオード(LED)であって、1つ以上の電気コネクタによって電気的に接続されている、複数の発光ダイオード(LED)と、
前記複数のLEDの周囲に配置された保持材料であって、前記1つ以上の電気コネクタの少なくとも一部を被覆する保持材料と
を備え、
前記サブマウントが、
誘電体層と、
前記誘電体層の上に配置され、かつ、前記複数のLEDから離間した導電性配線を備える伝導層と、
前記伝導層の上に配置された反射層と、
前記反射層及び前記伝導層の一部を貫通する少なくとも1つの穴と、
前記穴内、前記誘電体層上、及び前記導電性配線の側壁にソルダーレジストの少なくとも一部が配置されるように、前記反射層の上に配置された、反射材料を含むソルダーレジスト層と
を含む、発光デバイス。 - 前記穴の一部は前記伝導層の表面上で終端する、請求項18に記載の発光デバイス。
- 前記反射層及び前記伝導層が前記穴の側壁を形成する、請求項18又は19に記載の発光デバイス。
- 前記少なくとも1つの穴は、約0.2〜500マイクロメートル(μm)の範囲にある深さを備える、請求項18〜20のいずれか一項に記載の発光デバイス。
- 1つ以上の発光ダイオード(LED)を支持するサブマウントを備えた発光デバイスであって、前記サブマウントが、
粗面テクスチャを備え、かつ、前記1つ以上のLEDから離間した導電性配線を備える伝導層と、
前記伝導層の上に配置された反射層であって、平滑面テクスチャを有し、反射層を貫通する穴を備える反射層と、
前記反射層の上、前記穴内、及び前記伝導層の粗面化された表面の上方に配置された、反射材料を含むソルダーレジスト層と
を備える、発光デバイス。 - 前記反射層は電解Agからなる層を含む、請求項22に記載の発光デバイス。
- 前記粗面テクスチャは、波状の表面テクスチャ、複数のリップ、又は複数のくぼみを備える、請求項22又は23に記載の発光デバイス。
- 前記発光デバイスが誘電体層をさらに備え、前記伝導層が前記誘電体層の上方に配置されている、請求項22〜24のいずれか一項に記載の発光デバイス。
- 1つ以上の発光ダイオード(LED)を支持するサブマウントを提供する工程を含む、発光デバイスを提供する方法であって、前記サブマウントを提供する工程が、
前記1つ以上のLEDから離間した導電性配線を備える伝導層を堆積する工程と、
前記伝導層の上に反射層を堆積する工程と、
前記反射層を貫通する穴を形成する工程と、
前記伝導層の表面を粗面化する工程と、
前記反射層の上方、前記穴内、及び前記伝導層の粗面化された表面の上方に、反射材料を含むソルダーレジスト層を堆積する工程と
を含む方法。 - 前記伝導層の表面を粗面化する工程は、前記表面を機械的又は化学的に研磨する工程を含む、請求項26に記載の方法。
- 前記方法は、誘電体層を提供する工程をさらに含み、前記伝導層は前記誘電体層の上方に配置されている、請求項26又は27に記載の方法。
- 発光デバイスを提供する方法であって、
1つ以上の発光ダイオード(LED)を支持するサブマウントを提供する工程であって、前記サブマウントが、誘電体層と、前記誘電体層の上に配置され、かつ、前記1つ以上のLEDから離間した導電性配線を有する伝導層と、前記伝導層の上に配置される反射層とを備える、工程と、
第1フォトマスクを施した後に前記反射層の一部をエッチングする工程と、
前記伝導層が前記反射層よりも面積が大きく、又は小さくなるように、第2フォトマスクを施した後に前記伝導層の一部をエッチングする工程と、
前記誘電体層の一部の上、前記反射層の一部の上、及び前記導電性配線の側壁に、反射材料を含むソルダーレジスト層を堆積する工程と
を含む方法。 - 前記ソルダーレジスト層が前記誘電体層の一部及び前記伝導層の一部に直接接着している、請求項29に記載の方法。
- 前記伝導層と前記反射層との間にバリア層を堆積する工程をさらに含む、請求項29又は30に記載の方法。
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US8455908B2 (en) | 2013-06-04 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |