JP5916625B2 - 光抽出構造を含む半導体発光装置及び方法 - Google Patents
光抽出構造を含む半導体発光装置及び方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 13
- 238000000605 extraction Methods 0.000 title description 19
- 239000000758 substrate Substances 0.000 claims description 139
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- 238000000059 patterning Methods 0.000 claims description 6
- 239000011800 void material Substances 0.000 claims 1
- 239000002131 composite material Substances 0.000 description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 9
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- 239000000919 ceramic Substances 0.000 description 3
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- 230000003213 activating effect Effects 0.000 description 2
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- 239000011777 magnesium Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
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- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- 210000001217 buttock Anatomy 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
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- 239000000975 dye Substances 0.000 description 1
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- 150000002222 fluorine compounds Chemical class 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 239000005368 silicate glass Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- -1 thicknesses Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Description
Claims (11)
- 基板であって、
ホスト基板部、及び
接合層を介して前記ホスト基板部へ接合されたシード層、
を含む基板と、
前記シード層上に成長された半導体構造であって、n型領域とp型領域との間に配置された発光層を含む半導体構造と、
前記シード層と前記半導体構造との間に配置された非半導体層であって、複数の開口部を形成するパターンを有する非半導体層と、
前記開口部間に配置された前記非半導体層の領域の上の前記半導体構造内に配置された空孔と
を有し、
前記半導体構造の成長方向に直交する方向における屈折率の変化が、前記ホスト基板部と前記発光層との間に配置されている、
装置。 - 前記屈折率の変化が、隙間によって隔てられた接合層の部分を有し、
前記屈折率の変化は、前記ホスト基板部と前記シード層との間に配置されている、
請求項1に記載の装置。 - 前記隙間は、気体で充填され、前記シード層と直接接触にある、請求項2に記載の装置。
- 前記隙間は、気体で充填され、前記ホスト基板部と直接接触にある、請求項2に記載の装置。
- 前記隙間は、気体で充填され、前記シード層及び前記ホスト基板部から間を開けて配置されている、請求項2に記載の装置。
- 前記屈折率の変化は、前記半導体構造の反対側にある前記シード層の表面において形成され且つ2より小さい屈折率を有する材料で充填された複数の開口部を有する、請求項1に記載の装置。
- 前記屈折率の変化は、前記半導体構造と前記シード層との間の界面に配置された複数の空孔を有する、請求項1に記載の装置。
- 前記屈折率の変化は、第2の屈折率を有する第2の材料の複数の領域によって隔てられた第1の屈折率を有する第1の材料の複数の領域を有し、
前記第1の材料の前記領域のそれぞれと前記第2の材料の前記領域のそれぞれは、前記屈折率の変化の方向において、100nm乃至10ミクロンの間の横方向の拡がり度合いを有する、
請求項1に記載の装置。 - 前記屈折率の変化は、100nm乃至10ミクロンの間の高さを有する、請求項1に記載の装置。
- ホスト基板部、及び
接合層を介して前記ホスト基板部へ接合されたシード層、
を含む基板を提供するステップと、
前記基板上に、n型領域とp型領域との間に配置された発光層を含む半導体構造を成長させるステップと、
を含む方法であって、
前記半導体構造の成長方向に直交する方向における屈折率の変化が、前記ホスト基板部と前記発光層との間に配置され、
当該方法は更に、
前記シード層上に非半導体層を形成するステップと、
前記非半導体層をパターン化して複数の開口部を形成するステップと、
半導体材料が前記非半導体層内の前記開口部を充填し、且つ、前記開口部間に配置された前記非半導体層の領域の上に空孔が形成されるように、前記半導体構造を成長させるステップと、
により前記屈折率の変化を形成することを含む、
方法。 - 前記半導体構造を成長させた後に前記ホスト基板部を除去するステップを更に含む、請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US12/688,209 | 2010-01-15 | ||
US12/688,209 US8203153B2 (en) | 2010-01-15 | 2010-01-15 | III-V light emitting device including a light extracting structure |
PCT/IB2010/056112 WO2011086441A1 (en) | 2010-01-15 | 2010-12-29 | Iii-v light emitting device including a light extracting structure |
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JP2016075515A Division JP6307547B2 (ja) | 2010-01-15 | 2016-04-05 | 光抽出構造を含む半導体発光装置及び方法 |
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JP2013517620A JP2013517620A (ja) | 2013-05-16 |
JP5916625B2 true JP5916625B2 (ja) | 2016-05-11 |
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JP2016075515A Active JP6307547B2 (ja) | 2010-01-15 | 2016-04-05 | 光抽出構造を含む半導体発光装置及び方法 |
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US (2) | US8203153B2 (ja) |
EP (1) | EP2524401B1 (ja) |
JP (2) | JP5916625B2 (ja) |
KR (2) | KR102071163B1 (ja) |
CN (2) | CN105405944B (ja) |
RU (1) | RU2559305C2 (ja) |
TW (3) | TWI654777B (ja) |
WO (1) | WO2011086441A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8154052B2 (en) * | 2010-05-06 | 2012-04-10 | Koninklijke Philips Electronics N.V. | Light emitting device grown on wavelength converting substrate |
TWI408732B (zh) * | 2010-12-23 | 2013-09-11 | Nat Univ Chung Hsing | The epitaxial structure with easy removal of the sacrificial layer and its manufacturing method |
US8481353B2 (en) * | 2011-04-14 | 2013-07-09 | Opto Tech Corporation | Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation |
EP2711991A4 (en) * | 2011-05-19 | 2015-05-20 | Lattice Power Jiangxi Corp | METHOD FOR PRODUCING A FILM CHIP ON GALLIUM NITRIDE BASE |
JP5885436B2 (ja) * | 2011-09-06 | 2016-03-15 | ローム株式会社 | 発光素子および発光素子パッケージ |
US8946052B2 (en) * | 2012-09-26 | 2015-02-03 | Sandia Corporation | Processes for multi-layer devices utilizing layer transfer |
KR20140090346A (ko) * | 2013-01-07 | 2014-07-17 | 삼성전자주식회사 | 반도체 발광 소자 |
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