WO2023283913A1 - 偏振元件、发光二极管以及发光装置 - Google Patents

偏振元件、发光二极管以及发光装置 Download PDF

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Publication number
WO2023283913A1
WO2023283913A1 PCT/CN2021/106680 CN2021106680W WO2023283913A1 WO 2023283913 A1 WO2023283913 A1 WO 2023283913A1 CN 2021106680 W CN2021106680 W CN 2021106680W WO 2023283913 A1 WO2023283913 A1 WO 2023283913A1
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WIPO (PCT)
Prior art keywords
layer
protective layer
light
polarizing element
emitting diode
Prior art date
Application number
PCT/CN2021/106680
Other languages
English (en)
French (fr)
Inventor
霍曜
李彬彬
吴福仁
乔新宇
李瑞评
黄少华
曾晓强
杨剑锋
Original Assignee
福建晶安光电有限公司
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Publication date
Application filed by 福建晶安光电有限公司 filed Critical 福建晶安光电有限公司
Priority to PCT/CN2021/106680 priority Critical patent/WO2023283913A1/zh
Priority to CN202180003069.8A priority patent/CN113874768A/zh
Priority to TW111106711A priority patent/TWI812026B/zh
Publication of WO2023283913A1 publication Critical patent/WO2023283913A1/zh
Priority to US18/240,672 priority patent/US20230411573A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Definitions

  • the present application relates to the technical field related to semiconductors, and in particular to a polarizing element, a light emitting diode and a light emitting device.
  • the polarizing element is arranged on the substrate in parallel with metal wires with a period shorter than the wavelength used. There is an air gap between adjacent metal wires.
  • the polarizing element is widely used in display projection due to its advantages of high extinction ratio and high transmittance. field. With the demand for high luminance in the display and projection field, higher requirements are placed on the heat resistance of the polarizing element.
  • the traditional polarizing element includes a substrate, a metal wire array, and an organic resin layer. The organic resin layer covers the metal wire array and embeds the metal. The entire air gap between the wires, and the organic resin layer buried in the air gap will affect the reflection effect of the metal wire, so that the polarization performance of the polarizing element will be greatly reduced.
  • the purpose of this application is to provide a polarizing element, which uses a protective layer to cover the top and sidewall of the metal wire, and makes a gap between the second part of the protective layer at the sidewall of the adjacent metal wire, so as to improve the resistance of the polarizing element. On the basis of thermal stability and reliability, the polarizing performance of the polarizing element is further improved.
  • Another object is to provide a light-emitting diode and a light-emitting device, the light-emitting diode and the light-emitting device including the above-mentioned polarizing element.
  • an embodiment of the present application provides a polarizing element, which includes:
  • a transparent substrate and several metal wires, the several metal wires are arranged in parallel on the mounting surface of the transparent substrate at preset intervals; each metal wire extends a predetermined length along a direction parallel to the mounting surface;
  • the protective layer includes a first part of the protective layer and a second part of the protective layer; the first part of the protective layer covers the top of each metal line, and the first part of the protective layer of all metal lines is integrated; the second part of the protective layer covers the top of each metal line In the sidewall, a gap is left between the second part of the protection layer of adjacent metal lines.
  • the thickness D1 of the second part of the protective layer is equal to or less than 40% of the distance D2 between adjacent metal lines.
  • the thickness of the second part of the protective layer gradually increases in the height direction of the metal line.
  • the thickness of the second part of the protective layer first gradually decreases and then gradually increases in the height direction of the metal line.
  • the thickness D 3 of the first part of the protective layer is equal to or greater than 10 nm and less than or equal to 500 nm.
  • the material of the protective layer includes one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, or titanium oxide.
  • the protective layer includes an atomic layer deposition layer, a high-density plasma chemical vapor deposition layer or a plasma chemical vapor deposition layer.
  • the protective layer includes at least a first stack and a second stack; the first stack is an atomic layer deposition layer; the second stack is a high-density plasma chemical vapor deposition layer or a plasma chemical vapor deposition layer.
  • the embodiment of the present application provides a light emitting diode, which includes:
  • the semiconductor stack has a light-emitting surface for emitting at least part of the light from the light-emitting layer in the semiconductor stack;
  • the polarizing element is arranged on the light-emitting surface;
  • the polarizing element includes a transparent substrate, several metal wires and a protective layer, and the several metal wires are arranged in parallel on the transparent substrate at preset intervals; each metal wire extends along a direction parallel to the light-emitting surface by a predetermined length;
  • the protective layer includes a first part of the protective layer and a second part of the protective layer; the first part of the protective layer covers the top of each metal line, and the first part of the protective layer of all metal lines is integrated; the second part of the protective layer covers each of the metal lines The sidewalls of the adjacent metal lines are left with gaps between the second part of the protective layer.
  • a wavelength conversion layer, a transparent insulating layer or a transparent conductive layer is further included between the polarizing element and the light-emitting surface.
  • the thickness D1 of the second part of the protective layer is equal to or less than 40% of the distance D2 between adjacent metal lines.
  • the thickness of the second part of the protective layer gradually increases in the height direction of the metal lines.
  • the thickness of the second part of the protective layer first gradually decreases and then gradually increases in the height direction of the metal line.
  • the material of the protective layer includes one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, or titanium oxide.
  • the protective layer includes at least a first stack and a second stack; the first stack is an atomic layer deposition layer; the second stack is a high-density plasma chemical vapor deposition layer or a plasma chemical vapor deposition layer.
  • an embodiment of the present application provides a light emitting device, which includes a bracket, a light emitting diode disposed on the bracket, and an encapsulation layer for encapsulating the light emitting diode; the light emitting diode is the light emitting diode in the above embodiment.
  • the protective layer includes a first part of the protective layer on the top of the metal line and a second part of the protective layer on the sidewall of the metal line, so that the first part of the protective layer on the top of all the metal lines is integrated, and the second part of the adjacent metal line sidewall There are gaps between the protective layers, which can further improve the polarization performance of the polarizing element;
  • the protective layer is made of inorganic materials, and the thickness of the second part of the protective layer at the sidewall of the metal line changes in a gradient in the direction of the height of the metal line, so that the refractive index of the area between adjacent metal lines changes in a gradient, reducing The reflection loss of light improves the light extraction efficiency of the polarizing element.
  • FIG. 1 is a schematic structural diagram of a polarizing element according to an embodiment of the present application
  • FIG. 2 is a schematic structural diagram of a polarizing element according to an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
  • Fig. 7 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
  • Fig. 8 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of a light emitting diode according to an embodiment of the present application.
  • Fig. 11 is a schematic structural diagram of a light emitting device according to an embodiment of the present application.
  • Fig. 12 is a schematic structural diagram of a light emitting device according to an embodiment of the present application.
  • orientation or positional relationship indicated by the terms “upper” and “lower” are based on the orientation or positional relationship shown in the attached drawings, or the usual placement of the application product when it is used. Orientation or positional relationship is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application.
  • first and “second” etc. are only used for distinguishing descriptions, and should not be construed as indicating or implying relative importance.
  • the polarizing element includes an array of metal wires arranged in parallel on the substrate at a predetermined distance, which has poor heat resistance and reliability.
  • the reflectivity of the metal wires decreases due to oxidation or corrosion. Affect the polarizing performance of the polarizing element.
  • the conventional method is to cover the metal wire array with an organic resin layer and fill the entire air gap between the metal wires, however, the organic resin layer buried in the air gap will affect the metal wires. The reflection effect makes the polarizing performance of the polarizing element greatly reduced.
  • the inventor covers the top and sidewall of the metal wire with a protective layer made of inorganic materials, and the protective layer at the top of the adjacent metal wire is integrated, and the protective layer at the sidewall of the adjacent metal wire is There is a gap between them, and on the basis of improving the heat resistance and reliability of the polarizing element, the polarization performance of the polarizing element is further improved.
  • the polarizing element includes a transparent substrate 11 , several metal wires 12 and a protective layer 13 .
  • a number of metal wires 12 are arranged in parallel on the mounting surface of the transparent substrate 11 at preset intervals, and each metal wire 12 extends for a predetermined length in a direction parallel to the mounting surface, where the extending direction refers to the direction extending inward from the paper surface. direction.
  • the material of the wire 12 includes, but is not limited to, aluminum.
  • the protection layer 13 comprises a first part of the protection layer 131 and a second part of the protection layer 132.
  • the first part of the protection layer 131 covers the top of each metal line 12, and the first part of the protection layer 131 at all metal lines 12 is integrated; the second part of the protection layer The layer 132 covers the sidewall of each metal line 12 , and there is a gap 14 between the second portions of the protection layer 132 at adjacent metal lines 12 .
  • protective layer 13 to cover the top and sidewall of metal wire 12, prevent metal wire 12 from being oxidized or corroded because of being in contact with external environment, improve the heat resistance and reliability of polarizing element, meanwhile, make adjacent metal wire 12 sidewall There is a gap 14 between the second part of the protective layer 132 to further improve the polarizing performance of the polarizing element.
  • the first part of the protective layer 131 at the top of all the metal wires 12 is integrated, and the first part of the protective layer 131 here can be used as a micro lens to improve the light extraction efficiency of the polarizing element.
  • the thickness D 3 of the first partial protective layer 131 is equal to or greater than 10 nm and less than or equal to 500 nm.
  • the thickness D1 of the second part of the protective layer 132 is equal to or less than 40% of the distance D2 between the adjacent metal lines 12.
  • the thickness D1 of the second part of the protective layer 132 is equal to or less than that between the adjacent metal lines 12. 15 % of the distance D2 of the distance, so that there is a large gap between the second part of the protective layer 132 at the sidewall of the adjacent metal line 12, thereby ensuring that the polarizing element has good polarizing performance.
  • the thickness D1 of the second part of the protective layer 132 gradually increases in the height direction of the metal wires, so that the refractive index of the area between the adjacent metal wires 12 changes gradually, reduces the reflection loss of light, and improves the light extraction efficiency of the polarizing element.
  • the second part of the protective layer 132 has a gradient change in the height direction of the metal line, which can buffer thermal stress, especially the significant thermal stress generated when it is in a high temperature environment.
  • the thickness of the second part of the protective layer 132 first gradually decreases and then gradually increases in the height direction of the metal lines.
  • the thickness D1 of the gradually increasing part of the second part of the protective layer 132 is equal to or less than 40% of the distance D2 between adjacent metal lines, preferably, the thickness of the gradually increasing part of the second part of the protective layer 132 D 1 is equal to or less than 15% of the distance D 2 between adjacent metal lines 12 .
  • the outer wall surfaces of the first part of the protective layer 131 and the second part of the protective layer 132 are curved surfaces.
  • the protective layer 13 is made by a manufacturing process, specifically, the protective layer 13 includes but is not limited to atomic layer deposition layer, high density plasma chemical vapor deposition layer or plasma chemical vapor deposition layer,
  • the material of the protective layer 13 includes one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide or titanium oxide.
  • the protective layer 13 is made by various manufacturing processes, preferably, the protective layer 13 is made by two manufacturing processes.
  • the protection layer 13 includes a first stack and a second stack, the first stack is located on a side of the protection layer 13 close to the metal line 12 , and the density of the first stack is greater than that of the second stack.
  • the preparation process of the first stack and the second stack are different, and the materials thereof include one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide or titanium oxide.
  • the first stack is an atomic layer deposition layer made by atomic layer deposition
  • the second stack is a high-density plasma chemical vapor deposition layer made by high-density plasma chemical vapor deposition layer or a plasma chemical vapor deposition layer made by plasma chemical vapor deposition.
  • the protective layer 13 is made of inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide or titanium oxide, which has higher temperature resistance, and the adhesion between it and the blue film is weak, so as to avoid The metal wires 12 are peeled off during the flipping process, so as to improve the peeling resistance of the polarizing element.
  • the protective layer 13 is provided with a laminated structure, and the density of the first laminated layer is greater than that of the second laminated layer, so as to further improve the protective effect of the protective layer 13 on the metal wire 12 .
  • the light emitting diode includes a semiconductor stack layer 20, and the semiconductor stack layer 20 includes a first type semiconductor layer, a second type semiconductor layer, and a light emitting layer between the two; the first type semiconductor layer is electrically connected to the first electrode electrically connected, the second type semiconductor layer is electrically connected to the second electrode.
  • the semiconductor stacked layer 20 has a light-emitting surface for emitting at least part of the light from the light-emitting layer, and the light-emitting surface is provided with a polarizing element 10 .
  • the polarizing element 10 includes a transparent substrate 11, several metal wires 12 and a protective layer 13, several metal wires 12 are arranged in parallel on the transparent substrate 11 at preset intervals, and each metal wire 12 extends along a direction parallel to the light-emitting surface The predetermined length, where the extending direction refers to the direction extending inward from the paper surface.
  • the material of the wire 12 includes, but is not limited to, aluminum.
  • the protection layer 13 comprises a first part of the protection layer 131 and a second part of the protection layer 132.
  • the first part of the protection layer 131 covers the top of each metal line 12, and the first part of the protection layer 131 at all metal lines 12 is integrated; the second part of the protection layer The layer 132 covers the sidewall of each metal line 12 , and there is a gap 14 between the second portions of the protection layer 132 at adjacent metal lines 12 .
  • the top and sidewalls of the metal wires 12 are covered with a protective layer 13 to prevent the metal wires 12 from being oxidized or corroded due to contact with the external environment, thereby improving the heat resistance and reliability of the polarizing elements, and at the same time , there is a gap 14 between the second part of the protective layer 132 at the sidewall of the adjacent metal line 12, so as to further improve the polarizing performance of the polarizing element and the light emitting diode.
  • the first part of the protective layer 131 on the top of all the metal wires 12 is integrated, and the first part of the protective layer 131 here can be used as a micro lens to improve the light extraction efficiency of the polarizing element and the light emitting diode.
  • the metal wire 12 is prevented from being reversed during the flipping process. Be peeled off, improve the peeling resistance of polarizing elements and light-emitting diodes.
  • the transparent substrate 11 has a bonding surface, and the bonding surface is directly bonded to the light-emitting surface.
  • the light-emitting diode is a single-band light-emitting diode such as blue light/red light/green light
  • its light-emitting surface is directly bonded to the bonding surface of the transparent substrate 11 .
  • the protective layer 13 in the polarizing element 10 is bonded to the light-emitting surface.
  • the light-emitting diode is a single-band light-emitting diode such as blue light/red light/green light
  • its light-emitting surface is directly bonded to the protective layer 13 .
  • an intermediate layer 40 is also included between the polarizing element 10 and the light-emitting surface, and the bonding surface of the transparent substrate 11 is bonded to the light-emitting surface through the intermediate layer 40.
  • the intermediate layer 40 Specifically, it is selected as a wavelength conversion layer, a transparent insulating layer or a transparent conductive layer.
  • the intermediate layer 40 is a wavelength conversion layer, and the light emitting surface of the light emitting diode is bonded to the bonding surface of the transparent substrate 11 through the wavelength conversion layer.
  • the light emitting diode further includes a transparent substrate 30 formed on the light-emitting surface, and the bonding surface of the transparent substrate 11 is bonded to the transparent substrate 30 through the intermediate layer 40 .
  • the transparent substrate 30 includes a sapphire substrate, a gallium arsenide substrate, a silicon substrate, a ceramic substrate or a silicon carbide substrate.
  • the light emitting diode further includes a transparent substrate 30 formed on a surface of the semiconductor stack 20 opposite to the light-emitting surface.
  • the transparent substrate 30 includes a sapphire substrate, a gallium arsenide substrate, a silicon substrate, a ceramic substrate or a silicon carbide substrate.
  • the light-emitting surface is an uneven surface, and the uneven surface has non-periodic irregular patterns.
  • a specular reflective layer is provided on the side of the light output surface away from the polarizing element 10 , and the specular reflective layer includes a reflective metal layer, a distributed Bragg reflector DBR, and an omnidirectional reflector ODR.
  • the light-emitting surface is a flat surface, and an uneven layer is formed on the light-emitting surface, and the uneven layer is an intermediate layer such as a wavelength conversion layer, a transparent insulating layer, or a transparent conductive layer.
  • the surface of the uneven layer away from the light-emitting surface is an uneven surface, and the uneven surface has non-periodic irregular patterns.
  • a specular reflective layer is provided on the side of the light output surface away from the polarizing element 10 , and the specular reflective layer includes a reflective metal layer, a distributed Bragg reflector DBR, and an omnidirectional reflector ODR.
  • the thickness D 3 of the first part of the protective layer 131 is equal to or greater than 10 nm and less than or equal to 500 nm.
  • the thickness D1 of the second part of the protective layer 132 is equal to or less than 40% of the distance D2 between the adjacent metal lines 12.
  • the thickness D1 of the second part of the protective layer 132 is equal to or less than that between the adjacent metal lines 12. 15 % of the distance D2 of the distance, so that there is a large gap between the second part of the protective layer 132 at the sidewall of the adjacent metal line 12, thereby ensuring that the polarizing element has good polarizing performance.
  • the thickness D1 of the second part of the protective layer 132 gradually increases in the height direction of the metal wires, so that the refractive index of the area between the adjacent metal wires 12 changes gradually, reduces the reflection loss of light, and improves the light extraction efficiency of the polarizing element.
  • the second part of the protection layer 132 has a gradient change in the height direction of the metal line, which can buffer thermal stress, especially the significant thermal stress generated when it is in a high temperature environment.
  • the thickness of the second part of the protective layer 132 first gradually decreases and then gradually increases in the height direction of the metal line.
  • the thickness D1 of the gradually increasing part of the second part of the protective layer 132 is equal to or less than 40% of the distance D2 between adjacent metal lines, preferably, the thickness of the gradually increasing part of the second part of the protective layer 132 D 1 is equal to or less than 15% of the distance D 2 between adjacent metal lines 12 .
  • the outer wall surfaces of the first part of the protective layer 131 and the second part of the protective layer 132 are curved surfaces.
  • the protective layer 13 is made by a manufacturing process, specifically, the protective layer 13 includes but is not limited to atomic layer deposition layer, high density plasma chemical vapor deposition layer or plasma chemical vapor deposition layer,
  • the material of the protective layer 13 includes one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide or titanium oxide.
  • the protective layer 13 is made by various manufacturing processes, preferably, the protective layer 13 is made by two manufacturing processes.
  • the protection layer 13 includes a first stack and a second stack, the first stack is located on a side of the protection layer 13 close to the metal line 12 , and the density of the first stack is greater than that of the second stack.
  • the preparation process of the first stack and the second stack are different, and the materials thereof include one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide or titanium oxide.
  • the first stack is an atomic layer deposition layer made by atomic layer deposition
  • the second stack is a high-density plasma chemical vapor deposition layer made by high-density plasma chemical vapor deposition layer or a plasma chemical vapor deposition layer made by plasma chemical vapor deposition.
  • the protective layer 13 is made of inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide or titanium oxide, which has higher temperature resistance, and the adhesion between it and the blue film is weak, so as to avoid
  • the metal wire 12 is peeled off during the flipping process, which improves the peeling resistance of the polarizing element and the light emitting diode.
  • the protective layer 13 is provided with a laminated structure, and the density of the first laminated layer is greater than that of the second laminated layer, so as to further improve the protective effect of the protective layer 13 on the metal wire 12 .
  • the light emitting diode includes a semiconductor stack layer 20
  • the semiconductor stack layer 20 includes a first type semiconductor layer 201 , a light emitting layer 202 and a second type semiconductor layer 203 from top to bottom.
  • the upper surface of the semiconductor stack 20 is a light-emitting surface, and the light-emitting surface includes a transparent substrate 30 on which the polarizing element 10 is formed.
  • the lower surface of the semiconductor stacked layer 20 is provided with an opening, the opening extends from the second type semiconductor layer 203 to the inside of the first type semiconductor layer 201, and the first electrode 23 is formed at the opening, and the lower surface of the semiconductor stacked layer 20 except the opening
  • the area is formed with the second electrode 24 .
  • An insulating layer 25 is formed on the lower surface of the semiconductor stacked layer 20, a through hole is formed at the position corresponding to the first electrode 23 and the second electrode 24 in the insulating layer 25, and the first pad 26 is formed on the through hole corresponding to the first electrode 23. At the hole, the second pad 27 is formed at the through hole corresponding to the second electrode 24 .
  • the first-type semiconductor layer 201 is an N-type semiconductor layer
  • the second-type semiconductor layer 203 is a P-type semiconductor layer
  • the light-emitting layer 202 is a multi-layer quantum well layer.
  • an intermediate layer 40 is further included between the polarizing element 10 and the transparent substrate 30, and the intermediate layer 40 is a wavelength conversion layer.
  • the light-emitting surface is an uneven surface, and the uneven surface has non-periodic irregular patterns.
  • the uneven surface can be prepared by dry or wet etching. For dry etching, it is only necessary to set the appropriate plasma chemical composition and plasma power. For wet etching It is only necessary to set the appropriate etching solution and temperature.
  • a current blocking layer 21 and a transparent conductive layer 22 are sequentially formed on the lower surface of the semiconductor stack 20 except for the opening, and the second electrode 24 is formed on the transparent conductive layer 22 .
  • the light emitting diode includes a semiconductor stack layer 20
  • the semiconductor stack layer 20 includes a first type semiconductor layer 201 , a light emitting layer 202 and a second type semiconductor layer 203 from top to bottom.
  • the upper surface of the semiconductor stacked layer 20 is a light-emitting surface, and a first electrode 23 is provided.
  • the area of the light-emitting surface except the first electrode 23 is covered with an intermediate layer 40, which is a transparent insulating layer; the polarizing element 10 forms on the middle layer 40 .
  • the lower surface of the semiconductor stack layer 20 is fixed on the transparent substrate 30 through the metal layer 50 , and the transparent substrate 30 is a conductive substrate; the side surface of the transparent substrate 30 away from the semiconductor stack layer 20 is provided with a second electrode 24 .
  • the first-type semiconductor layer 201 is an N-type semiconductor layer
  • the second-type semiconductor layer 203 is a P-type semiconductor layer
  • the light-emitting layer 202 is a multi-layer quantum well layer.
  • the surface of the light-emitting surface except the first electrode 23 is an uneven surface, and the uneven surface has non-periodic irregular patterns.
  • the uneven surface can be prepared by dry or wet etching. For dry etching, it is only necessary to set the appropriate plasma chemical composition and plasma power. For wet etching It is only necessary to set the appropriate etching solution and temperature.
  • a specular reflection layer is provided between the metal layer 50 and the semiconductor stacked layer 20 , and the specular reflection layer is mainly used to increase light output toward the light output surface.
  • Embodiment 1 and Embodiment 2 are only exemplary, and the present application is also applicable to light emitting diodes with other structures.
  • the light emitting device includes a support S100 , a light emitting diode S200 disposed on the support S100 and an encapsulation layer S300 for encapsulating the light emitting diode S200 .
  • the light emitting diode S200 is the light emitting diode described in the above embodiments, and the description of the light emitting diode S200 will not be repeated here.
  • the support S100 is optionally planar, or a reflective cup is provided around the area on the support S100 for mounting the LED S200, and the reflective cup defines a space for accommodating the LED S200.
  • the encapsulation layer S300 includes one or a combination of transparent glue, reflective glue, black glue, and other opaque glue.
  • the protection layer 13 includes a first part of the protection layer 131 on the top of the metal line 12 and a second part of the protection layer 132 on the sidewall of the metal line 12, so that the first part of the protection layer 131 on the top of all the metal lines 12 are integrated, and the adjacent metal lines There is a gap 14 between the second part of the protective layer 132 at the sidewall 12, which can further improve the polarizing performance of the polarizing element.
  • the protective layer 13 is made of inorganic materials, the adhesion between it and the blue film is weak, and its top is connected to form an integral structure, which prevents the metal wires 12 from being peeled off during the flipping process, and improves the polarization of the polarizing element. peel resistance.
  • the thickness of the second part of the protective layer 132 at the sidewall of the metal line 12 has a gradient change in the height direction of the metal line, so that the refractive index of the area between adjacent metal lines 12 changes in a gradient to reduce the reflection loss of light, Improve the light extraction efficiency of the polarizing element.

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Abstract

本申请公开了一种偏振元件、发光二极管以及发光装置，该偏振元件包括透明基板、若干条金属线和保护层，若干条金属线以预设间距平行布置在透明基板的安装面上；每条金属线沿与安装面平行的方向延伸预定长度；保护层包括覆盖每条金属线顶部的第一部分保护层和覆盖每条金属线侧壁的第二部分保护层，所有金属线的第一部分保护层连成一体，相邻金属线的第二部分保护层之间留有间隙。本申请利用保护层覆盖金属线的顶部和侧壁，防止金属线因与外界环境接触而被氧化或者腐蚀，提高偏振元件的耐热性和可靠性，且使所有金属线顶部的第一部分保护层连成一体，相邻金属线侧壁处的第二部分保护层之间存在间隙，以进一步提高偏振元件的偏光性能。

Description

偏振元件、发光二极管以及发光装置 技术领域
本申请涉及半导体相关技术领域，尤其涉及一种偏振元件、发光二极管以及发光装置。
 背景技术
偏振元件是在基板上以比所使用波长短的周期平行地配置有金属线，相邻金属线之间包括有空气间隙，偏振元件由于具有高消光比、高透射率等优点广泛应用于显示投影领域。随着显示投影领域的高辉度化需求，对偏振元件的耐热性提出了更高要求，传统偏振元件包括基板、金属线阵列以及有机树脂层，有机树脂层覆盖金属线阵列并填埋金属线间的整个空气间隙，填埋在空气间隙处的有机树脂层会影响金属线的反射效果，使得偏振元件的偏光性能大幅降低。
 技术解决方案
本申请的目的是提供一种偏振元件，其采用保护层覆盖金属线的顶部与侧壁，且使相邻金属线侧壁处的第二部分保护层之间存在间隙，在提高偏振元件的耐热性和可靠性的基础上，进一步提高偏振元件的偏光性能。
另一目的还在于提供一种发光二极管以及发光装置，该发光二极管以及发光装置包括上述偏振元件。
第一方面，本申请实施例提供一种偏振元件，其包括：
透明基板和若干条金属线，若干条金属线以预设间距平行布置在透明基板的安装面上；每条金属线沿与安装面平行的方向延伸预定长度；
保护层，包括第一部分保护层和第二部分保护层；第一部分保护层覆盖每条金属线的顶部，所有金属线的第一部分保护层连成一体；第二部分保护层覆盖每条金属线的侧壁，相邻金属线的第二部分保护层之间留有间隙。
在一种可能的实施方案中，第二部分保护层的厚度D 1等于或者小于相邻金属线间的间距D 2的40%。
在一种可能的实施方案中，第二部分保护层的厚度在金属线高度方向上逐渐增大。
在一种可能的实施方案中，第二部分保护层的厚度在金属线高度方向上先逐渐减小后逐渐增大。
在一种可能的实施方案中，第一部分保护层的厚度D 3等于或者大于10nm，且小于或者等于500nm。
在一种可能的实施方案中，保护层的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝或者氧化钛的一种或多种。
在一种可能的实施方案中，保护层包括原子层沉积层、高密度等离子体化学气相沉积层或者等离子体化学气相沉积层。
在一种可能的实施方案中，保护层至少包括第一叠层和第二叠层；第一叠层为原子层沉积层；第二叠层为高密度等离子体化学气相沉积层或者等离子体化学气相沉积层。
第二方面，本申请实施例提供一种发光二极管，其包括：
半导体堆叠层，具有一出光面，该出光面用于出射半导体堆叠层中发光层的至少部分光线；
偏振元件，设在出光面；偏振元件包括透明基板、若干条金属线和保护层，若干条金属线以预设间距平行布置在透明基板上；每条金属线沿与出光面平行的方向延伸预定长度；保护层包括第一部分保护层和第二部分保护层；第一部分保护层覆盖每条金属线的顶部，所有金属线的第一部分保护层连成一体；第二部分保护层覆盖每条金属线的侧壁，相邻金属线的第二部分保护层之间留有间隙。
在一种可能的实施方案中，偏振元件与出光面之间还包括有波长转换层、透明绝缘层或者透明导电层。
在一种可能的实施方案中，第二部分保护层的厚度D 1等于或者小于相邻金属线间的间距D 2的40%。
在一种可能的实施方案中，第二部分保护层的厚度在金属线高度方向上逐渐增大。
在一种可能的实施方案中，第二部分保护层的厚度在金属线高度方向上先逐渐减小后逐渐增大。
在一种可能的实施方案中，保护层的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝或者氧化钛的一种或多种。
在一种可能的实施方案中，保护层至少包括第一叠层和第二叠层；第一叠层为原子层沉积层；第二叠层为高密度等离子体化学气相沉积层或者等离子体化学气相沉积层。
第三方面，本申请实施例提供一种发光装置，其包括支架、设置在支架上的发光二极管以及用于封装发光二极管的封装层；发光二极管为上述实施例中的发光二极管。
 有益效果
与现有技术相比，本申请的有益效果至少如下：
1）利用保护层覆盖金属线的顶部和侧壁，防止金属线因与外界环境接触而被氧化或者腐蚀，提高偏振元件的耐热性和可靠性。保护层包括位于金属线顶部的第一部分保护层和位于金属线侧壁的第二部分保护层，使所有金属线顶部的第一部分保护层连成一体，相邻金属线侧壁处的第二部分保护层之间存在间隙，可进一步提高偏振元件的偏光性能；
2）保护层由无机材料制成，且金属线侧壁处的第二部分保护层的厚度在金属线高度方向呈梯度变化，以使相邻金属线间区域的折射率呈梯度变化，减小光线的反射损耗，提高偏振元件的出光效率。
 附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本申请的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1为根据本申请实施例示出的一种偏振元件的结构示意图；
图2为根据本申请实施例示出的一种偏振元件的结构示意图；
图3为根据本申请实施例示出的一种发光二极管的结构示意图；
图4为根据本申请实施例示出的一种发光二极管的结构示意图；
图5为根据本申请实施例示出的一种发光二极管的结构示意图；
图6为根据本申请实施例示出的一种发光二极管的结构示意图；
图7为根据本申请实施例示出的一种发光二极管的结构示意图；
图8为根据本申请实施例示出的一种发光二极管的结构示意图；
图9为根据本申请实施例示出的一种发光二极管的结构示意图；
图10为根据本申请实施例示出的一种发光二极管的结构示意图；
图11为根据本申请实施例示出的一种发光装置的结构示意图；
图12为根据本申请实施例示出的一种发光装置的结构示意图。
图示说明：
10偏振元件；11透明基板；12金属线；13保护层；131第一部分保护层；132第二部分保护层；14间隙；20半导体堆叠层；201第一类型半导体层；202发光层；203第二类型半导体层；21电流阻挡层；22透明导电层；23第一电极；24第二电极；25绝缘层；26第一焊盘；27第二焊盘；30透明衬底；40中间层；50金属层；S100支架；S200发光二极管；S300封装层。
 本发明的实施方式
以下通过特定的具体实施例说明本申请的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本申请的其他优点与功效。本申请还可以通过另外不同的具体实施方式加以实施或营业，本申请中的各项细节也可以基于不同观点与应用，在没有背离本申请的精神下进行各种修饰或改变。
在本申请的描述中，需要说明的是，术语“上”和“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该申请产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”和“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。
偏振元件包括以预设间距平行布置在基板上的金属线阵列，其具有较差的耐热性和可靠性，当其处于高温环境时，金属线因被氧化或者腐蚀而导致其反射率下降，影响偏振元件的偏光性能。为了提高偏振元件的耐热性和可靠性，传统方法为采用有机树脂层覆盖金属线阵列并填埋金属线间的整个空气间隙，但是，填埋在空气间隙处的有机树脂层会影响金属线的反射效果，使得偏振元件的偏光性能大幅降低。为了解决上述问题，发明人利用由无机材料所制成的保护层覆盖金属线的顶部和侧壁，且使相邻金属线顶部的保护层连成一体，相邻金属线侧壁处的保护层之间存在间隙，在提高偏振元件的耐热性和可靠性的基础上，进一步提高偏振元件的偏光性能。
根据本申请的一个方面，提供了一种偏振元件。参见图1，该偏振元件包括透明基板11、若干条金属线12和保护层13。若干条金属线12以预设间距平行布置在透明基板11的安装面上，且每条金属线12沿与安装面平行的方向延伸预定长度，此处延伸方向指的是自纸面向里延伸的方向。金属线12的材料包括但不限于铝。保护层13包括第一部分保护层131和第二部分保护层132，第一部分保护层131覆盖每条金属线12的顶部，所有金属线12处的第一部分保护层131连成一体；第二部分保护层132覆盖每条金属线12的侧壁，相邻金属线12处的第二部分保护层132之间留有间隙14。
利用保护层13覆盖金属线12的顶部和侧壁，防止金属线12因与外界环境接触而被氧化或者腐蚀，提高偏振元件的耐热性和可靠性，同时，使相邻金属线12侧壁处的第二部分保护层132之间存在间隙14，以进一步提高偏振元件的偏光性能。所有金属线12顶部处的第一部分保护层131连成一体，此处的第一部分保护层131可作为微透镜，提高了偏振元件的出光效率。另外，将上述偏振元件应用于发光二极管时，在采用蓝膜进行翻面工艺过程中，由于保护层13与蓝膜之间的粘附力较弱，且保护层13顶部相连形成一个整体结构，避免金属线12在翻面工艺过程中被剥离，提高偏振元件的耐剥离性。
在一种实施方式中，参见图1，第一部分保护层131的厚度D 3等于或者大于 10nm，且小于或者等于500nm。第二部分保护层132的厚度D 1等于或者小于相邻金属线12间的间距D 2的40%，较佳地，第二部分保护层132的厚度D 1等于或者小于相邻金属线12间的间距D 2的15%，以使相邻金属线12侧壁处的第二部分保护层132之间具有较大间隙，进而保证偏振元件具有良好的偏光性能。第二部分保护层132的厚度D 1在金属线高度方向上逐渐增大，以使相邻金属线12间区域的折射率呈梯度变化，减小光线的反射损耗，提高偏振元件的出光效率。另外，第二部分保护层132在金属线高度方向上呈梯度变化，可对热应力起到缓冲作用，尤其是当其处于高温环境所产生的显著的热应力。
作为可替换的实施方式，参见图2，第二部分保护层132的厚度在金属线高度方向上先逐渐减小后逐渐增大。第二部分保护层132逐渐增大的那部分的厚度D 1等于或者小于相邻金属线间的间距D 2的40%，较佳地，第二部分保护层132逐渐增大的那部分的厚度D 1等于或者小于相邻金属线12间的间距D 2的15%。
较佳地，第一部分保护层131和第二部分保护层132的外壁面为弧形面。
在一种实施方式中，保护层13由一种制备工艺所制成，具体地，保护层13包括但不限于原子层沉积层、高密度等离子体化学气相沉积层或者等离子体化学气相沉积层，保护层13的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝或者氧化钛的一种或多种。
作为可替换的实施方式，保护层13由多种制备工艺所制成，优选地，保护层13由两种制备工艺所制成。保护层13包括第一叠层和第二叠层，第一叠层位于保护层13靠近金属线12的一侧，且第一叠层的致密度大于第二叠层的致密度。第一叠层和第二叠层的制备工艺不同，其材料包括氧化硅、氮化硅、氮氧化硅、氧化铝或者氧化钛的一种或多种。在本实施例中，第一叠层为由原子层沉积法所制成的原子层沉积层；第二叠层为由高密度等离子体化学气相沉积法所制成的高密度等离子体化学气相沉积层或者由等离子体化学气相沉积法所制成的等离子体化学气相沉积层。
保护层13由氧化硅、氮化硅、氮氧化硅、氧化铝或者氧化钛等无机材料制成，其具有较高的耐温性，且其与蓝膜之间的粘附力较弱，避免金属线12在翻面工艺过程中被剥离，提高偏振元件的耐剥离性。将保护层13设置叠层结构，且第一叠层的致密度大于第二叠层的致密度，进一步提高保护层13对金属线12的保护效果。
根据本申请的一个方面，提供了一种发光二极管。参见图3，该发光二极管包括半导体堆叠层20，该半导体堆叠层20包括第一类型半导体层、第二类型半导体层以及位于两者之间的发光层；第一类型半导体层与第一电极电性连接，第二类型半导体层与第二电极电性连接。
半导体堆叠层20具有用于出射发光层的至少部分光线的出光面，该出光面设有偏振元件10。该偏振元件10包括透明基板11、若干条金属线12和保护层13，若干条金属线12以预设间距平行布置在透明基板11上，且每条金属线12沿与出光面平行的方向延伸预定长度，此处延伸方向指的是自纸面向里延伸的方向。金属线12的材料包括但不限于铝。保护层13包括第一部分保护层131和第二部分保护层132，第一部分保护层131覆盖每条金属线12的顶部，所有金属线12处的第一部分保护层131连成一体；第二部分保护层132覆盖每条金属线12的侧壁，相邻金属线12处的第二部分保护层132之间留有间隙14。
在具有偏振元件的发光二极管中，利用保护层13覆盖金属线12的顶部和侧壁，防止金属线12因与外界环境接触而被氧化或者腐蚀，提高偏振元件的耐热性和可靠性，同时，使相邻金属线12侧壁处的第二部分保护层132之间存在间隙14，以进一步提高偏振元件与发光二极管的偏光性能。所有金属线12顶部的第一部分保护层131连成一体，此处的第一部分保护层131可作为微透镜，提高了偏振元件与发光二极管的出光效率。另外，在采用蓝膜进行翻面工艺过程中，由于保护层13与蓝膜之间的粘附力较弱，且保护层13顶部相连形成一个整体结构，避免金属线12在翻面工艺过程中被剥离，提高偏振元件与发光二极管的耐剥离性。
在一种实施方式中，参见图3，透明基板11具有一贴合面，该贴合面直接与出光面贴合。具体地，当发光二极管为蓝光/红光/绿光等单波段发光二极管时，其出光面直接与透明基板11的贴合面贴合。
作为可替换的实施方式，参见图4，偏振元件10中的保护层13与出光面贴合。具体地，当发光二极管为蓝光/红光/绿光等单波段发光二极管时，其出光面直接与保护层13贴合。
作为可替换的实施方式，参见图5和图6，偏振元件10与出光面之间还包括有中间层40，透明基板11的贴合面通过中间层40与出光面贴合，该中间层40具体选为波长转换层、透明绝缘层或者透明导电层。
具体地，当发光二极管为白光发光二极管时，中间层40为波长转换层，发光二极管的出光面通过波长转换层与透明基板11的贴合面贴合。
较佳地，参见图5，该发光二极管还包括透明衬底30，该透明衬底30形成在出光面上，透明基板11的贴合面通过中间层40与透明衬底30贴合。透明衬底30包括蓝宝石衬底、砷化镓衬底、硅衬底、陶瓷衬底或者碳化硅衬底。
较佳地，参见图6，该发光二极管还包括透明衬底30，该透明衬底30形成在半导体堆叠层20中与出光面相对的一侧表面上。透明衬底30包括蓝宝石衬底、砷化镓衬底、硅衬底、陶瓷衬底或者碳化硅衬底。
在一种实施方式中，出光面为非平整面，该非平整面具有非周期性的不规则图形。出光面远离偏振元件10的一侧设置有镜面反射层，该镜面反射层包括反射金属层、分布式布拉格反射镜DBR、全方向反射镜ODR。通过上述出光面、上述镜面反射层以及偏振元件10可进一步实现光的多次选择萃取，并提高光的利用率。
作为可替换的实施方式，出光面为平整面，出光面上形成有非平整层，该非平整层为波长转换层、透明绝缘层或者透明导电层等中间层。非平整层远离出光面的一侧表面为非平整面，该非平整面具有非周期性的不规则图形。出光面远离偏振元件10的一侧设置有镜面反射层，该镜面反射层包括反射金属层、分布式布拉格反射镜DBR、全方向反射镜ODR。通过上述非平整层、上述镜面反射层以及偏振元件10可进一步实现光的多次选择萃取，并提高光的利用率。
在一种实施方式中，参见图3，第一部分保护层131的厚度D 3等于或者大于 10nm，且小于或者等于500nm。第二部分保护层132的厚度D 1等于或者小于相邻金属线12间的间距D 2的40%，较佳地，第二部分保护层132的厚度D 1等于或者小于相邻金属线12间的间距D 2的15%，以使相邻金属线12侧壁处的第二部分保护层132之间具有较大间隙，进而保证偏振元件具有良好的偏光性能。第二部分保护层132的厚度D 1在金属线高度方向上逐渐增大，以使相邻金属线12间区域的折射率呈梯度变化，减小光线的反射损耗，提高偏振元件的出光效率。另外，第二部分保护层132在金属线高度方向上呈梯度变化，可对热应力起到缓冲作用，尤其是当其处于高温环境所产生的显著的热应力。
作为可替换的实施方式，第二部分保护层132的厚度在金属线高度方向上先逐渐减小后逐渐增大。第二部分保护层132逐渐增大的那部分的厚度D 1等于或者小于相邻金属线间的间距D 2的40%，较佳地，第二部分保护层132逐渐增大的那部分的厚度D 1等于或者小于相邻金属线12间的间距D 2的15%。
较佳地，第一部分保护层131和第二部分保护层132的外壁面为弧形面。
在一种实施方式中，保护层13由一种制备工艺所制成，具体地，保护层13包括但不限于原子层沉积层、高密度等离子体化学气相沉积层或者等离子体化学气相沉积层，保护层13的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝或者氧化钛的一种或多种。
作为可替换的实施方式，保护层13由多种制备工艺所制成，优选地，保护层13由两种制备工艺所制成。保护层13包括第一叠层和第二叠层，第一叠层位于保护层13靠近金属线12的一侧，且第一叠层的致密度大于第二叠层的致密度。第一叠层和第二叠层的制备工艺不同，其材料包括氧化硅、氮化硅、氮氧化硅、氧化铝或者氧化钛的一种或多种。在本实施例中，第一叠层为由原子层沉积法所制成的原子层沉积层；第二叠层为由高密度等离子体化学气相沉积法所制成的高密度等离子体化学气相沉积层或者由等离子体化学气相沉积法所制成的等离子体化学气相沉积层。
保护层13由氧化硅、氮化硅、氮氧化硅、氧化铝或者氧化钛等无机材料制成，其具有较高的耐温性，且其与蓝膜之间的粘附力较弱，避免金属线12在翻面工艺过程中被剥离，提高偏振元件与发光二极管的耐剥离性。将保护层13设置叠层结构，且第一叠层的致密度大于第二叠层的致密度，进一步提高保护层13对金属线12的保护效果。
下面以该发光二极管的具体实施结构进行示例说明：
实施例一
参见图7和图8，该发光二极管包括半导体堆叠层20，半导体堆叠层20自上而下包括第一类型半导体层201、发光层202和第二类型半导体层203。半导体堆叠层20的上表面为出光面，出光面上包括有透明衬底30，偏振元件10形成在透明衬底30上。半导体堆叠层20的下表面开设有开口，该开口自第二类型半导体层203延伸至第一类型半导体层201内部，开口处形成有第一电极23，半导体堆叠层20下表面除开口之外的区域形成有第二电极24。半导体堆叠层20的下表面形成有绝缘层25，绝缘层25与第一电极23、第二电极24对应的位置处设有通孔，第一焊盘26形成在与第一电极23对应的通孔处，第二焊盘27形成在与第二电极24对应的通孔处。在本实施例中，第一类型半导体层201为N型半导体层，第二类型半导体层203为P型半导体层，发光层202为多层量子阱层。
较佳地，偏振元件10与透明衬底30之间还包括有中间层40，该中间层40为波长转换层。
较佳地，出光面为非平整面，该非平整面具有非周期性的不规则图形。在本实施例中，该非平整面可采用干法或湿法蚀刻方法制备而成，对于干式蚀刻来说只需设定合适的等离子体化学成分和等离子体功率即可，对于湿法蚀刻来说只需设定合适的蚀刻溶液和温度即可。
较佳地，半导体堆叠层20下表面除开口之外的区域依次形成有电流阻挡层21和透明导电层22，第二电极24形成在透明导电层22上。
实施例二
参见图9和图10，该发光二极管包括半导体堆叠层20，半导体堆叠层20自上而下包括第一类型半导体层201、发光层202和第二类型半导体层203。半导体堆叠层20的上表面为出光面，且设有第一电极23，该出光面除第一电极23之外的区域覆盖有中间层40，该中间层40为透明绝缘层；偏振元件10形成在中间层40上。半导体堆叠层20的下表面通过金属层50固定在透明衬底30上，该透明衬底30为导电衬底上；透明衬底30远离半导体堆叠层20的一侧表面设有第二电极24。在本实施例中，第一类型半导体层201为N型半导体层，第二类型半导体层203为P型半导体层，发光层202为多层量子阱层。
较佳地，出光面除第一电极23之外的表面为非平整面，该非平整面具有非周期性的不规则图形。在本实施例中，该非平整面可采用干法或湿法蚀刻方法制备而成，对于干式蚀刻来说只需设定合适的等离子体化学成分和等离子体功率即可，对于湿法蚀刻来说只需设定合适的蚀刻溶液和温度即可。
较佳地，金属层50与半导体堆叠层20之间设有镜面反射层，该镜面反射层主要是用于增加朝向出光面的出光。
需要说明的是，实施例一和实施例二中发光二极管的结构只是示例性的，本申请还适用于其他结构的发光二极管。
根据本申请的一个方面，提供了一种发光装置。参见图11和图12，该发光装置包括支架S100、设置在支架S100上的发光二极管S200以及用于封装发光二极管S200的封装层S300。发光二极管S200为上述实施例所描述的发光二极管，这里对于发光二极管S200的描述就不再一一赘述。
较佳地，支架S100可选的为平面型，或者，支架S100上用于安装有发光二极管S200的区域周围设置有反射杯，该反射杯限定出用于容纳发光二极管S200的空间。
较佳地，封装层S300包括透明胶、反射胶、黑胶、其他不透光胶的一种或者组合。
由以上的技术方案可知，利用保护层13覆盖金属线12的顶部和侧壁，防止金属线12因与外界环境接触而被氧化或者腐蚀，提高偏振元件的耐热性和可靠性。保护层13包括位于金属线12顶部的第一部分保护层131和位于金属线12侧壁的第二部分保护层132，使所有金属线12顶部的第一部分保护层131连成一体，相邻金属线12侧壁处的第二部分保护层132之间存在间隙14，可进一步提高偏振元件的偏光性能。
进一步地，保护层13由无机材料制成，其与蓝膜之间的粘附力较弱，且其顶部相连形成一个整体结构，避免金属线12在翻面工艺过程中被剥离，提高偏振元件的耐剥离性。
进一步地，金属线12侧壁处的第二部分保护层132的厚度在金属线高度方向呈梯度变化，以使相邻金属线12间区域的折射率呈梯度变化，减小光线的反射损耗，提高偏振元件的出光效率。
以上所述仅是本申请的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本申请的保护范围。

Claims (16)

  1. 一种偏振元件，其特征在于，包括：
    透明基板和若干条金属线，所述若干条金属线以预设间距平行布置在所述透明基板的安装面上；每条所述金属线沿与安装面平行的方向延伸预定长度；
    保护层，包括第一部分保护层和第二部分保护层；所述第一部分保护层覆盖每条所述金属线的顶部，所有金属线的所述第一部分保护层连成一体；所述第二部分保护层覆盖每条所述金属线的侧壁，相邻金属线的所述第二部分保护层之间留有间隙。
  2. 根据权利要求1所述的偏振元件，其特征在于，所述第二部分保护层的厚度D 1等于或者小于相邻所述金属线间的间距D 2的40%。
  3. 根据权利要求1所述的偏振元件，其特征在于，所述第二部分保护层的厚度在金属线高度方向上逐渐增大。
  4. 根据权利要求1所述的偏振元件，其特征在于，所述第二部分保护层的厚度在金属线高度方向上先逐渐减小后逐渐增大。
  5. 根据权利要求1所述的偏振元件，其特征在于，所述第一部分保护层的厚度D 3等于或者大于10nm，且小于或者等于500nm。
  6. 根据权利要求1所述的偏振元件，其特征在于，所述保护层的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝或者氧化钛的一种或多种。
  7. 根据权利要求1所述的偏振元件，其特征在于，所述保护层包括原子层沉积层、高密度等离子体化学气相沉积层或者等离子体化学气相沉积层。
  8. 根据权利要求1所述的偏振元件，其特征在于，所述保护层至少包括第一叠层和第二叠层；所述第一叠层为原子层沉积层；所述第二叠层为高密度等离子体化学气相沉积层或者等离子体化学气相沉积层。
  9. 一种发光二极管，其特征在于，包括：
    半导体堆叠层，具有一出光面，所述出光面用于出射所述半导体堆叠层中发光层的至少部分光线；
    偏振元件，设在所述出光面；所述偏振元件包括透明基板、若干条金属线和保护层，所述若干条金属线以预设间距平行布置在所述透明基板上；每条所述金属线沿与出光面平行的方向延伸预定长度；所述保护层包括第一部分保护层和第二部分保护层；所述第一部分保护层覆盖每条所述金属线的顶部，所有金属线的所述第一部分保护层连成一体；所述第二部分保护层覆盖每条所述金属线的侧壁，相邻金属线的所述第二部分保护层之间留有间隙。
  10. 根据权利要求9所述的发光二极管，其特征在于，所述偏振元件与所述出光面之间还包括有波长转换层、透明绝缘层或者透明导电层。
  11. 根据权利要求9所述的发光二极管，其特征在于，所述第二部分保护层的厚度D 1等于或者小于相邻所述金属线间的间距D 2的40%。
  12. 根据权利要求9所述的发光二极管，其特征在于，所述第二部分保护层的厚度在金属线高度方向上逐渐增大。
  13. 根据权利要求9所述的发光二极管，其特征在于，所述第二部分保护层的厚度在金属线高度方向上先逐渐减小后逐渐增大。
  14. 根据权利要求9所述的发光二极管，其特征在于，所述保护层的材料包括氧化硅、氮化硅、氮氧化硅、氧化铝或者氧化钛的一种或多种。
  15. 根据权利要求9所述的发光二极管，其特征在于，所述保护层至少包括第一叠层和第二叠层；所述第一叠层为原子层沉积层；所述第二叠层为高密度等离子体化学气相沉积层或者等离子体化学气相沉积层。
  16. 一种发光装置，其特征在于，包括支架、设置在所述支架上的发光二极管以及用于封装所述发光二极管的封装层；所述发光二极管为权利要求9~15中任一项所述的发光二极管。
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