JP5890614B2 - 接続方法及び接続構造体並びに接続構造体の製造方法 - Google Patents
接続方法及び接続構造体並びに接続構造体の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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Description
ガラス基板とICチップとを異方性導電フィルムを介して接続し、接続構造体を製造した。ガラス基板としては、基板電極がファインピッチに形成されたものを使用した。ICチップとしては、ガラス基板の基板電極に対向する位置にバンプが形成されたものを使用した。
〔Niメッキ樹脂粒子の調整〕
3μmのジビニルベンゼン系樹脂粒子(5g)に、パラジウム触媒を浸漬法により担持させた。次いで、この樹脂粒子に対し、硫酸ニッケル六水和物、次亜リン酸ナトリウム、クエン酸ナトリウム、トリエタノールアミン及び硝酸タリウムから調製された無電解ニッケルメッキ液(pH12、メッキ液温50℃)を用いて無電解ニッケルメッキを行った。これにより、種々のリン含有量を有するニッケルメッキ層(金属層)が表面に形成されたニッケル被覆樹脂粒子を導電粒子として得た。得られた導電粒子の平均粒径は、3〜4μmの範囲であった。
ビスA型フェノキシ樹脂(商品名YP50、東都化成株式会社製)25質量部、ビスフェノールA型液状エポキシ樹脂(商品名EP828、ジャパンエポキシレジン株式会社製)35質量部、イミダゾール系潜在性硬化剤(商品名PHX3941HP、旭化成株式会社製)40質量部、エポキシ系シランカップリング剤(商品名A−187、モメンティブ・パフォーマンス・マテリアルズ株式会社製)1質量部
加圧圧力が設定圧力である60MPaに達した時点で電磁石コイルに対して通電を開始してヘッド部を磁化させる以外は、実施例1と同様にして接続構造体を作製した。実施例2の接続構造体の模式断面図を図3に示す。
ディレイタイムを0.2秒とする以外は、実施例1と同様にして接続構造体を作製した。実施例3の接続構造体の模式断面図を図2に示す。
ディレイタイムを1秒とする以外は、実施例1と同様にして接続構造体を作製した。実施例4の接続構造体の模式断面図を図2に示す。
ディレイタイムを2秒とする以外は、実施例1と同様にして接続構造体を作製した。実施例5の接続構造体の模式断面図を図4に示す。
ディレイタイムを5秒とする以外は、実施例1と同様にして接続構造体を作製した。実施例5の接続構造体の模式断面図を図4に示す。
電磁石コイルに対して通電を行わないことによりヘッド部を磁化させない以外は、実施例1と同様にして接続構造体を作製した。比較例1の接続構造体の模式断面図を図5に示す。
実施例1と同様の導電性粒子含有層のみからなる異方性導電フィルムを用いる以外は、実施例1と同様にして接続構造体を作製した。比較例2の接続構造体の模式断面図を図6に示す。
導電性粒子含有層に含有させる導電性粒子を、実施例1の導電性粒子に替えて、導電性の非磁性材料であるAu及び導電性の磁性材料であるNiの合金であるAu/Niメッキ被膜に覆われてなるAu/Niメッキ樹脂粒子(平均粒径4μmにより構成される導電性粒子(商品名AUL704、積水化学工業社製)35質量部とする以外は、実施例1と同様にして接続構造体を作製した。比較例3の接続構造体の模式断面図を図5に示す。
実施例1〜6、比較例1〜3の接続構造体に対し、30Vの電圧を印加し(2端子法)、製造直後の接続構造体の隣接端子間の絶縁性を、絶縁抵抗値を測定し、以下の基準に従って評価した。
A:1.0×109Ω以上、B:1.0×106Ω以上1.0×109Ω未満、C:1.0×106Ω未満
実施例1〜6、比較例1〜3の接続構造体に対し、接続前にガラス基板の基板電極上にある導電性粒子の数(接続前粒子数)を次の式(1)により算出した。
接続前粒子数=導電性粒子含有層における導電性粒子の粒子(面)密度(個/mm2)×端子の面積(mm2) ・・(1)
粒子捕捉率=(接続後粒子数/接続前粒子数)×100 ・・(2)
Claims (7)
- 基板と電子部品とを異方性導電接続する接続方法において、
導電性粒子が含まれない絶縁性の接着剤組成物からなる絶縁性接着剤層と、絶縁性の接着剤組成物に、少なくとも表面が導電性の磁性材料からなる導電性粒子が分散されている導電性粒子含有層とが積層されてなる異方性導電接着部材を介して前記基板上に前記電子部品を仮配置する仮配置工程と、
熱加圧によって前記基板と前記電子部品とを前記異方性導電接着部材を介して圧着接続する接続工程とを有し、
前記接続工程では、熱加圧における加圧圧力が設定圧力に達した時点から0.2秒以上5秒以下を経過後に、磁化を開始して前記異方性導電接着部材に対して前記絶縁性接着剤層側から磁力を作用させる接続方法。 - 前記接続工程では、熱加圧における加圧圧力が設定圧力に達した時点から0.2秒以上1秒以下を経過後に、磁化を開始して前記異方性導電接着部材に対して前記絶縁性接着剤層側から磁力を作用させる請求項1に記載の接続方法。
- 前記仮配置工程では、前記異方性導電接着部材を、前記導電性粒子含有層を前記基板に対向させるようにして該基板上に配置した後、該異方性導電接着部材上に前記電子部品を仮配置し、
前記接続工程では、周囲に電磁石コイルを備えた磁性材料からなるヘッド部を有する熱加圧ツールの加熱した該ヘッド部を前記電子部品の上面に押し当てて加圧し、前記電磁石コイルに対して通電を行うことにより該ヘッド部を磁化させて前記磁力を作用させる請求項1又は2に記載の接続方法。 - 前記基板は、周囲に電磁石コイルを備えた磁性材料からなる支持台上に載置されており、
前記仮配置工程では、前記異方性導電接着部材を、前記絶縁性接着剤層を前記基板に対向させるようにして該基板上に配置した後、該異方性導電接着部材上に前記電子部品を仮配置し、
前記接続工程では、
ヘッド部を有する熱加圧ツールの加熱した該ヘッド部を前記電子部品の上面に押し当てて加圧し、前記電磁石コイルに対して通電を行うことにより前記支持台を磁化させて前記磁力を作用させる請求項1乃至3の何れか1項に記載の接続方法。 - 前記磁性材料は、ニッケルである請求項1乃至4の何れか1項記載の接続方法。
- 前記異方性導電接着部材は、前記絶縁性接着剤層及び前記導電性粒子含有層が何れもフィルム状に形成されてなる請求項1乃至5の何れか1項記載の接続方法。
- 基板と電子部品とが異方性導電接続されてなる接続構造体の製造方法において、
導電性粒子が含まれない絶縁性の接着剤組成物からなる絶縁性接着剤層と、絶縁性の接着剤組成物に、少なくとも表面が導電性の磁性材料からなる導電性粒子が分散されている導電性粒子含有層とが積層されてなる異方性導電接着部材を介して前記基板上に前記電子部品を仮配置する仮配置工程と、
熱加圧によって前記基板と前記電子部品とを前記異方性導電接着部材を介して圧着接続する接続工程とを有し、
前記接続工程では、熱加圧における加圧圧力が設定圧力に達した時点から0.2秒以上5秒以下を経過後に、磁化を開始して前記異方性導電接着部材に対して前記絶縁性接着剤層側から磁力を作用させる接続構造体の製造方法。
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