JP5889118B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP5889118B2 JP5889118B2 JP2012133516A JP2012133516A JP5889118B2 JP 5889118 B2 JP5889118 B2 JP 5889118B2 JP 2012133516 A JP2012133516 A JP 2012133516A JP 2012133516 A JP2012133516 A JP 2012133516A JP 5889118 B2 JP5889118 B2 JP 5889118B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- gap
- young
- film
- modulus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000005498 polishing Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 29
- 239000000126 substance Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 description 25
- 238000004088 simulation Methods 0.000 description 11
- 239000002002 slurry Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920000620 organic polymer Polymers 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
図1(b)は、第1実施形態の半導体装置1の模式断面図である。
グラフbは、図8(c)の状態のCMP中に、露出した絶縁膜(シリコン酸化膜)21表面にスラリー中の粒子が押し付けられた際に空隙15上端に加わる応力を表す。
グラフcは、図8(c)の状態のCMP中に、配線層16と絶縁膜21との間の段差部17にスラリー中の粒子が押し付けられた際に空隙15上端に加わる応力を表す。
図3(b)は、第2実施形態の半導体装置2の模式断面図である。
図5(b)は、第3実施形態の半導体装置3の模式断面図である。
図6(b)は、第4実施形態の半導体装置4の模式断面図である。
Claims (5)
- 基板と、
前記基板上に設けられた複数の回路要素と、前記回路要素間に設けられた空隙とを有する下地構造と、
前記下地構造の上に設けられ、前記空隙の上端を覆う第1の絶縁膜と、
前記第1の絶縁膜上に設けられ、前記第1の絶縁膜のヤング率よりも低く、30GPa以下のヤング率を有する第2の絶縁膜と、
前記第2の絶縁膜上に設けられ、前記第2の絶縁膜よりもヤング率が高い第3の絶縁膜と、
前記第3の絶縁膜に埋め込まれた配線層と、
を備えた半導体装置。 - 基板と、
前記基板上に設けられた複数の回路要素と、前記回路要素間に設けられた空隙とを有する下地構造と、
前記下地構造の上に設けられ、前記空隙の上端を覆う第1の絶縁膜と、
前記第1の絶縁膜上に設けられ、前記第1の絶縁膜及びシリコン酸化膜よりもヤング率が低い第2の絶縁膜と、
を備えた半導体装置。 - 前記第2の絶縁膜上に設けられ、前記第2の絶縁膜よりもヤング率が高い第3の絶縁膜をさらに備えた請求項2記載の半導体装置。
- 前記基板は、前記下地構造が設けられた第1の領域と、前記下地構造を介さずに前記第1の絶縁膜が前記基板上に設けられた第2の領域とを有し、
前記第2の絶縁膜は、前記第1の領域上の少なくとも一部の領域に局所的に設けられている請求項1〜3のいずれか1つに記載の半導体装置。 - 基板と、
前記基板上に設けられた複数の回路要素と、前記回路要素間に設けられた空隙とを有する下地構造と、
前記下地構造の上に設けられ、前記空隙の上端を覆う第1の絶縁膜と、
前記第1の絶縁膜上に設けられ、前記第1の絶縁膜及びシリコン酸化膜よりもヤング率が低い第2の絶縁膜と、
を有するウェーハの表面をCMP(chemical mechanical polishing)法により研磨する半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012133516A JP5889118B2 (ja) | 2012-06-13 | 2012-06-13 | 半導体装置及びその製造方法 |
US13/765,941 US8823079B2 (en) | 2012-06-13 | 2013-02-13 | Semiconductor device and method for manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012133516A JP5889118B2 (ja) | 2012-06-13 | 2012-06-13 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013258302A JP2013258302A (ja) | 2013-12-26 |
JP5889118B2 true JP5889118B2 (ja) | 2016-03-22 |
Family
ID=49755094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012133516A Expired - Fee Related JP5889118B2 (ja) | 2012-06-13 | 2012-06-13 | 半導体装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8823079B2 (ja) |
JP (1) | JP5889118B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI613709B (zh) * | 2013-02-20 | 2018-02-01 | 財團法人工業技術研究院 | 半導體元件結構及其製造方法與應用其之畫素結構 |
WO2017073317A1 (ja) * | 2015-10-27 | 2017-05-04 | 株式会社村田製作所 | 圧電デバイス、及び圧電デバイスの製造方法 |
US9922940B2 (en) | 2016-02-22 | 2018-03-20 | Toshiba Memory Corporation | Semiconductor device including air gaps between interconnects and method of manufacturing the same |
JP6485393B2 (ja) * | 2016-03-15 | 2019-03-20 | 信越半導体株式会社 | シリコンウェーハの評価方法及びシリコンウェーハの製造方法 |
CN108878363B (zh) * | 2017-05-12 | 2021-07-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3384487B2 (ja) | 2000-02-21 | 2003-03-10 | 日本電気株式会社 | 絶縁膜の形成方法および多層配線 |
JP4513249B2 (ja) * | 2001-09-28 | 2010-07-28 | Jsr株式会社 | 銅ダマシン構造の製造方法 |
JP3648480B2 (ja) | 2001-12-26 | 2005-05-18 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP4417202B2 (ja) | 2004-08-19 | 2010-02-17 | Necエレクトロニクス株式会社 | 半導体装置 |
JP2006302950A (ja) | 2005-04-15 | 2006-11-02 | Renesas Technology Corp | 不揮発性半導体装置および不揮発性半導体装置の製造方法 |
JP5329786B2 (ja) | 2007-08-31 | 2013-10-30 | 株式会社東芝 | 研磨液および半導体装置の製造方法 |
JP5172567B2 (ja) | 2008-09-25 | 2013-03-27 | 株式会社東芝 | 膜形成用組成物、絶縁膜、半導体装置およびその製造方法 |
JP2010087160A (ja) | 2008-09-30 | 2010-04-15 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置 |
JP2010147410A (ja) | 2008-12-22 | 2010-07-01 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
WO2010125682A1 (ja) * | 2009-04-30 | 2010-11-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US20120007165A1 (en) * | 2010-07-12 | 2012-01-12 | Samsung Electronics Co., Ltd. | Semiconductor devices |
JP5696679B2 (ja) | 2012-03-23 | 2015-04-08 | 富士通株式会社 | 半導体装置 |
-
2012
- 2012-06-13 JP JP2012133516A patent/JP5889118B2/ja not_active Expired - Fee Related
-
2013
- 2013-02-13 US US13/765,941 patent/US8823079B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130334590A1 (en) | 2013-12-19 |
JP2013258302A (ja) | 2013-12-26 |
US8823079B2 (en) | 2014-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5889118B2 (ja) | 半導体装置及びその製造方法 | |
US9865545B2 (en) | Plurality of substrates bonded by direct bonding of copper recesses | |
JP4222979B2 (ja) | 半導体装置 | |
KR100720261B1 (ko) | 반도체 소자 및 그의 제조 방법 | |
US10381358B2 (en) | Semiconductor device and manufacturing method thereof | |
JP2010287831A (ja) | 半導体装置およびその製造方法 | |
JP2006344900A (ja) | 半導体装置 | |
JP2007157893A (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
US20090026525A1 (en) | Memory and method for fabricating the same | |
JP2006121023A (ja) | フラッシュメモリ素子の製造方法 | |
US20100001328A1 (en) | Semiconductor device having an anti-pad peeling-off structure | |
US6621117B2 (en) | Semiconductor device having memory cell and peripheral circuitry with dummy electrode | |
US20050236670A1 (en) | Soi single crystalline chip structure | |
CN111463167A (zh) | 半导体元件及其制造方法 | |
US9761490B2 (en) | Method for forming contact holes in a semiconductor device | |
JP2007129030A (ja) | 半導体装置及びその製造方法 | |
JP2011091130A (ja) | 半導体装置 | |
JP2008084936A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2008147352A (ja) | 半導体装置およびその製造方法 | |
TWI794747B (zh) | 半導體裝置及其製造方法 | |
JP5488728B2 (ja) | パッド、半導体装置、半導体装置の製造方法及び試験方法 | |
JP2008085102A (ja) | 半導体装置およびその製造方法 | |
KR101793160B1 (ko) | 반도체 소자 제조 방법 | |
JP2006179916A (ja) | パッシベーション層を有する半導体素子 | |
US7642190B2 (en) | Method of forming thin insulating layer in MRAM device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140825 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150612 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150622 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150729 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160118 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160216 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5889118 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |