JP5800251B2 - Ｌｅｄ素子 - Google Patents

Ｌｅｄ素子 Download PDF

Info

Publication number: JP5800251B2
Authority: JP; Japan
Prior art keywords: layer; led element; semiconductor layer; semiconductor; ingan
Prior art date: 2013-01-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2013270303A

Other languages

English (en)

Japanese (ja)

Other versions

JP2014160806A (ja

Inventor

晃平三好

月原　政志

政志月原

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Ushio Denki KK

Original Assignee

Ushio Denki KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2013-01-23

Filing date

2013-12-26

Publication date

2015-10-28

2013-12-26 Application filed by Ushio Denki KK filed Critical Ushio Denki KK

2013-12-26 Priority to JP2013270303A priority Critical patent/JP5800251B2/ja

2014-01-23 Priority to US14/762,387 priority patent/US9818907B2/en

2014-01-23 Priority to KR1020157015805A priority patent/KR101665902B1/ko

2014-01-23 Priority to CN201480005614.7A priority patent/CN104937731B/zh

2014-01-23 Priority to PCT/JP2014/051363 priority patent/WO2014115800A1/ja

2014-09-04 Publication of JP2014160806A publication Critical patent/JP2014160806A/ja

2015-10-28 Application granted granted Critical

2015-10-28 Publication of JP5800251B2 publication Critical patent/JP5800251B2/ja

Status Active legal-status Critical Current

2033-12-26 Anticipated expiration legal-status Critical

Links

Images

Landscapes

Led Devices (AREA)

JP2013270303A 2013-01-23 2013-12-26 Ｌｅｄ素子 Active JP5800251B2 (ja)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
JP2013270303A JP5800251B2 (ja)	2013-01-23	2013-12-26	Ｌｅｄ素子
US14/762,387 US9818907B2 (en)	2013-01-23	2014-01-23	LED element
KR1020157015805A KR101665902B1 (ko)	2013-01-23	2014-01-23	Led 소자
CN201480005614.7A CN104937731B (zh)	2013-01-23	2014-01-23	Led元件
PCT/JP2014/051363 WO2014115800A1 (ja)	2013-01-23	2014-01-23	Ｌｅｄ素子

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2013010554		2013-01-23
JP2013010554		2013-01-23
JP2013270303A JP5800251B2 (ja)	2013-01-23	2013-12-26	Ｌｅｄ素子

Publications (2)

Publication Number	Publication Date
JP2014160806A JP2014160806A (ja)	2014-09-04
JP5800251B2 true JP5800251B2 (ja)	2015-10-28

Family

ID=51612280

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2013270303A Active JP5800251B2 (ja)	2013-01-23	2013-12-26	Ｌｅｄ素子

Country Status (2)

Country	Link
JP (1)	JP5800251B2 (zh)
TW (1)	TWI535054B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6135954B2 (ja) *	2015-10-22	2017-05-31	ウシオ電機株式会社	窒化物半導体発光素子
CN112436076A (zh) *	2020-11-20	2021-03-02	湘能华磊光电股份有限公司	一种led外延结构及生长方法

2013
- 2013-12-26 JP JP2013270303A patent/JP5800251B2/ja active Active
2014
- 2014-01-08 TW TW103100646A patent/TWI535054B/zh active

Also Published As

Publication number	Publication date
JP2014160806A (ja)	2014-09-04
TWI535054B (zh)	2016-05-21
TW201432937A (zh)	2014-08-16

Similar Documents

Publication	Publication Date	Title
JP5533744B2 (ja)	2014-06-25	Ｉｉｉ族窒化物半導体発光素子
JP5737111B2 (ja)	2015-06-17	Ｉｉｉ族窒化物半導体発光素子
JP5634368B2 (ja)	2014-12-03	半導体装置
US20090166606A1 (en)	2009-07-02	Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof
US9755107B2 (en)	2017-09-05	Group III nitride semiconductor light-emitting device
JP6482573B2 (ja)	2019-03-13	窒化物半導体発光素子
JP5861947B2 (ja)	2016-02-16	半導体発光素子及びその製造方法
JP2007305851A (ja)	2007-11-22	窒化物半導体発光素子
JP2008244307A (ja)	2008-10-09	半導体発光素子および窒化物半導体発光素子
JP6128138B2 (ja)	2017-05-17	半導体発光素子
JP5983684B2 (ja)	2016-09-06	Ｌｅｄ素子
US9818907B2 (en)	2017-11-14	LED element
JP5229048B2 (ja)	2013-07-03	Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP5800251B2 (ja)	2015-10-28	Ｌｅｄ素子
JP2014183285A (ja)	2014-09-29	発光素子
JP5800252B2 (ja)	2015-10-28	Ｌｅｄ素子
JP2008227103A (ja)	2008-09-25	ＧａＮ系半導体発光素子
WO2014115800A1 (ja)	2014-07-31	Ｌｅｄ素子
JP6071044B2 (ja)	2017-02-01	半導体発光素子及びその製造方法
JP2016225525A (ja)	2016-12-28	窒化物半導体発光素子
US9508895B2 (en)	2016-11-29	Group III nitride semiconductor light-emitting device and production method therefor
JP5340351B2 (ja)	2013-11-13	窒化物半導体装置
JP2014082396A (ja)	2014-05-08	窒化物半導体発光素子
JP2005252309A (ja)	2005-09-15	窒化ガリウム系半導体発光素子の製造方法

Legal Events

Date	Code	Title	Description
2015-04-23	A621	Written request for application examination	Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150423
2015-04-23	A871	Explanation of circumstances concerning accelerated examination	Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20150423
2015-06-03	A975	Report on accelerated examination	Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20150602
2015-07-28	TRDD	Decision of grant or rejection written
2015-08-03	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150731
2015-09-03	A61	First payment of annual fees (during grant procedure)	Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150813
2015-09-04	R150	Certificate of patent or registration of utility model	Ref document number: 5800251 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150
2018-08-07	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2019-08-06	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2020-08-05	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2021-08-04	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2023-08-09	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250