JP5751544B2 - 非冷却マイクロボロメータを製造する際に使用するシリコン・オン・インシュレーター(soi)相補型金属酸化物半導体(cmos)ウェーハ - Google Patents
非冷却マイクロボロメータを製造する際に使用するシリコン・オン・インシュレーター(soi)相補型金属酸化物半導体(cmos)ウェーハ Download PDFInfo
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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Description
この出願は、2010年4月12日に出願され、譲受人に譲渡された「非冷却赤外線検知装置アレイ及びその製造方法」と題する米国仮特許出願第61/322,982号の優先権とその利益を請求するものであり、本明細書に参照により組み入れた。
本発明は、一般に赤外線検出器の分野に関するものであり、より詳しくは、ガラス工場で定義されたシリコン・オン・インシュレーター(SOI)相補型金属酸化物半導体(CMOS)ウェーハから製造される、非冷却赤外線検出器に関するものである。
従来の非冷却赤外線検出器はピクセルのアレイを有し得るが、そのおのおのは、熱電変換素子の機能を実行するために、単一のダイオードを含み得る。一般に、単一のダイオードは、ターンオン電圧を有し得、当該ターンオン電圧は、熱吸収層の温度に依存する。単一のダイオードが定電流を伝導する場合、単一のダイオードを横切る電位差は熱吸収層によって変換された熱によって変わり得る。そのため、単一のダイオードの電位差は、受け取られた赤外線の強度を測定するために使用され得る。
前記方法は、前記壁構造体から前記ピクセル構造体を分離するために正面のピクセル空間を定義するように、前記ピクセルマスクおよび前記壁マスクによって被覆されていない前記誘電体層の一部を通り、かつ前記ピクセルマスク及び壁マスクによって被覆されていない前記絶縁層の一部を通って垂直エッチングを行う工程、前記ピクセルマスクと前記壁マスクを除去する工程、および前記基板上かつ前記ピクセル構造体の下にウェルを形成するために異方性シリコンエッチングを行う工程を含み、前記ウェルは、前記基板層と前記壁構造体から熱的にピクセル構造体を分離するために前記正面のピクセル空間を連結する背面部ピクセル空間を定義する。
Claims (9)
- 非冷却マイクロボロメータを製造する際に使用するシリコン・オン・インシュレーター(SOI)相補型金属酸化物半導体(CMOS)ウェーハであって、前記SOI−CMOSウェーハは、
基板層;
前記基板層上に形成された絶縁層であって、ピクセル領域と、該ピクセル領域を囲む壁領域とを有する絶縁層;
前記絶縁層の前記ピクセル領域上に形成されたピクセル構造体であって、前記絶縁層の前記ピクセル領域上に形成された複数のダイオード、及び複数のダイオードにわたって形成されるとともに前記複数のダイオードと直列接続している金属層を含み、前記金属層は吸収を改善するための内部反射面として機能するピクセル構造体;
前記ピクセル構造体に隣接して、かつ前記絶縁層の壁領域上に形成された壁構造体;
前記ピクセル構造体と前記壁構造体を被覆する誘電体層;
前記誘電体層内に形成されたピクセルマスクであって、およびドライエッチング工程の間に前記ピクセル構造体を保護するために形成されたピクセルマスク;
および
前記誘電体層内に形成された壁マスクであって、および前記ドライエッチング工程の間に前記壁構造体を保護するために形成され、それによって、前記ドライエッチング工程の後に前記壁構造体と前記ピクセル構造体の間に定義された空間を解放する壁マスクを備えてなるSOI−CMOSウェーハ。 - 前記ピクセルマスクが、正方形形状を含み、そして
前記壁マスクは、前記ピクセルマスクを囲むが、前記ピクセルマスクと接触しない正方形のフレームを含む請求項1記載のSOI−CMOSウェーハ。 - 前記ピクセルマスクが、前記壁マスクより前記基板層に接近している請求項2記載のSOI−CMOSウェーハ。
- 前記誘電体層が、
前記誘電体層の範囲内且つ前記ピクセルマスクの下に形成された傘層を含み、それによって前記傘層が、ドライエッチング工程の間に前記ピクセルマスクによって保護される請求項1記載のSOI−CMOSウェーハ。 - 前記傘層が、前記壁構造体の一部を被覆するために延びる請求項4記載のSOI−CMOSウェーハ。
- 前記傘層の下に、かつ前記ピクセル構造体に隣接して形成された犠牲層であって、前記ドライエッチング工程の前に、前記傘層を支持し、および前記ドライエッチング工程の間に前記傘構造体を保護する犠牲層をさらに含む請求項4記載のSOI−CMOSウェーハ。
- 前記誘電体層が、前記ピクセル構造体と前記壁構造体との間で定義される空間を充填してなる請求項1記載のSOI−CMOSウェーハ。
- 前記絶縁層上に形成され、前記ピクセル構造体と前記壁構造体を接続する支持アーム構造体、および
前記誘電体層内に形成された支持アームマスクであって、および前記ドライエッチング工程の間に前記支持アーム構造体を保護する支持アームマスクをさらに備える請求項1記載のSOI−CMOSウェーハ。 - 前記支持アームマスクが、前記ピクセルマスクより前記基板に接近している請求項8記
載のSOI−CMOSウェーハ。
Applications Claiming Priority (3)
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US32298210P | 2010-04-12 | 2010-04-12 | |
US61/322,982 | 2010-04-12 | ||
PCT/US2011/032136 WO2011130284A2 (en) | 2010-04-12 | 2011-04-12 | Uncooled infrared detector and methods for manufacturing the same |
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JP2013529295A JP2013529295A (ja) | 2013-07-18 |
JP5751544B2 true JP5751544B2 (ja) | 2015-07-22 |
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US (1) | US8941064B2 (ja) |
EP (2) | EP2559067B1 (ja) |
JP (1) | JP5751544B2 (ja) |
KR (1) | KR101528968B1 (ja) |
CN (1) | CN102884627B (ja) |
CA (1) | CA2800847C (ja) |
HK (1) | HK1176745A1 (ja) |
IL (1) | IL222342A (ja) |
WO (1) | WO2011130284A2 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5143176B2 (ja) * | 2010-03-31 | 2013-02-13 | 株式会社東芝 | 赤外線撮像素子およびその製造方法 |
TWI439679B (zh) * | 2011-08-03 | 2014-06-01 | Univ Nat Chiao Tung | 電校式輻射計 |
US9646874B1 (en) | 2013-08-05 | 2017-05-09 | Sandia Corporation | Thermally-isolated silicon-based integrated circuits and related methods |
TWI512955B (zh) * | 2013-08-26 | 2015-12-11 | Ind Tech Res Inst | 半導體元件結構、紅外線感測元件與其製作方法 |
US9219185B2 (en) | 2013-12-19 | 2015-12-22 | Excelitas Technologies Singapore Pte. Ltd | CMOS integrated method for the fabrication of thermopile pixel with umbrella absorber on semiconductor substrate |
US9373772B2 (en) * | 2014-01-15 | 2016-06-21 | Excelitas Technologies Singapore Pte. Ltd. | CMOS integrated method for the release of thermopile pixel on a substrate by using anisotropic and isotropic etching |
US9324760B2 (en) | 2014-01-21 | 2016-04-26 | Excelitas Technologies Singapore Pte. Ltd | CMOS integrated method for fabrication of thermopile pixel on semiconductor substrate with buried insulation regions |
CN105261622B (zh) * | 2014-06-03 | 2017-12-22 | 上海丽恒光微电子科技有限公司 | 一种成像探测器的制造方法 |
WO2015187886A1 (en) * | 2014-06-04 | 2015-12-10 | Flir Systems, Inc. | Systems and methods for enhanced bolometer response |
TWI569427B (zh) * | 2014-10-22 | 2017-02-01 | 精材科技股份有限公司 | 半導體封裝件及其製法 |
US9726547B2 (en) | 2014-11-25 | 2017-08-08 | Globalfoundries Inc. | Microbolometer devices in CMOS and BiCMOS technologies |
US11105684B2 (en) * | 2015-12-16 | 2021-08-31 | Mikrosens Elektronik San. Ve Tic. | Microbolometer structure |
TWI615985B (zh) | 2015-12-25 | 2018-02-21 | 財團法人工業技術研究院 | 光感測元件及其製造方法 |
CN106932105A (zh) * | 2015-12-31 | 2017-07-07 | 上海丽恒光微电子科技有限公司 | 一种红外探测器及其制备方法 |
US10128302B2 (en) * | 2016-01-28 | 2018-11-13 | Ams Sensors Uk Limited | IR detector array device |
US11211305B2 (en) | 2016-04-01 | 2021-12-28 | Texas Instruments Incorporated | Apparatus and method to support thermal management of semiconductor-based components |
US10787303B2 (en) | 2016-05-29 | 2020-09-29 | Cellulose Material Solutions, LLC | Packaging insulation products and methods of making and using same |
US11078007B2 (en) | 2016-06-27 | 2021-08-03 | Cellulose Material Solutions, LLC | Thermoplastic packaging insulation products and methods of making and using same |
US10074639B2 (en) | 2016-12-30 | 2018-09-11 | Texas Instruments Incorporated | Isolator integrated circuits with package structure cavity and fabrication methods |
US20180315808A1 (en) * | 2017-04-28 | 2018-11-01 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Organic light emitting (oled) display panels, and the manufacturing methods and display devices thereof |
US11056382B2 (en) * | 2018-03-19 | 2021-07-06 | Globalfoundries U.S. Inc. | Cavity formation within and under semiconductor devices |
US10727161B2 (en) * | 2018-08-06 | 2020-07-28 | Texas Instruments Incorporated | Thermal and stress isolation for precision circuit |
CN110627014B (zh) * | 2019-09-19 | 2022-09-23 | 中国科学院上海微***与信息技术研究所 | 一种在衬底上制作悬浮红外热堆的方法 |
CN114112055B (zh) * | 2021-03-26 | 2023-07-07 | 北京北方高业科技有限公司 | 一种基于cmos工艺的红外探测器及其制备方法 |
CN113720455A (zh) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | 基于cmos工艺的红外探测器 |
Family Cites Families (17)
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JP4011851B2 (ja) * | 1997-12-18 | 2007-11-21 | 三菱電機株式会社 | 赤外線固体撮像素子 |
JP3366590B2 (ja) * | 1998-02-04 | 2003-01-14 | 科学技術振興事業団 | 温度測定装置、熱型赤外線イメージセンサ及び温度測定方法 |
JP3589997B2 (ja) | 2001-03-30 | 2004-11-17 | 株式会社東芝 | 赤外線センサおよびその製造方法 |
JP4865957B2 (ja) | 2001-05-17 | 2012-02-01 | 三菱電機株式会社 | 熱型赤外線固体撮像装置の製造方法 |
JP3675770B2 (ja) | 2002-03-22 | 2005-07-27 | 株式会社東芝 | 熱型赤外線撮像素子 |
JP4028441B2 (ja) | 2003-06-18 | 2007-12-26 | 株式会社東芝 | 赤外線固体撮像素子およびその製造方法 |
US20050224714A1 (en) * | 2004-04-08 | 2005-10-13 | Tayfun Akin | Ultra low-cost uncooled infrared detector arrays in CMOS |
WO2006132155A1 (ja) * | 2005-06-06 | 2006-12-14 | Matsushita Electric Industrial Co., Ltd. | 電子デバイス及びその製造方法 |
JP4372097B2 (ja) | 2005-12-27 | 2009-11-25 | 株式会社東芝 | 赤外線センサ、赤外線カメラ、赤外線センサの駆動方法および赤外線カメラの駆動方法 |
JP4775128B2 (ja) | 2006-06-15 | 2011-09-21 | 日産自動車株式会社 | 赤外線検出装置 |
DE102006028435A1 (de) | 2006-06-21 | 2007-12-27 | Robert Bosch Gmbh | Sensor und Verfahren zu seiner Herstellung |
KR100928200B1 (ko) * | 2007-10-31 | 2009-11-25 | 한국전자통신연구원 | 바이폴라 트랜지스터 기반의 비냉각형 적외선 센서 및 그의제조 방법 |
KR100925214B1 (ko) * | 2007-11-29 | 2009-11-06 | 한국전자통신연구원 | 볼로미터 및 그 제조 방법 |
JP2009174917A (ja) | 2008-01-22 | 2009-08-06 | Oki Semiconductor Co Ltd | 赤外線検出素子、及び赤外線検出素子の製造方法 |
JP2009229260A (ja) | 2008-03-24 | 2009-10-08 | Toshiba Corp | 赤外線センサ素子 |
JP4975669B2 (ja) * | 2008-03-25 | 2012-07-11 | 株式会社東芝 | 赤外線検出器およびこの赤外線検出器を備えた固体撮像素子 |
JP2010032410A (ja) | 2008-07-30 | 2010-02-12 | Toshiba Corp | イメージセンサおよびその製造方法 |
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IL222342A0 (en) | 2012-12-31 |
WO2011130284A3 (en) | 2012-02-23 |
EP2559067A4 (en) | 2015-06-10 |
KR101528968B1 (ko) | 2015-06-15 |
US8941064B2 (en) | 2015-01-27 |
EP3024028A1 (en) | 2016-05-25 |
KR20130007618A (ko) | 2013-01-18 |
CA2800847C (en) | 2015-11-24 |
WO2011130284A2 (en) | 2011-10-20 |
CA2800847A1 (en) | 2011-10-20 |
EP2559067B1 (en) | 2019-11-06 |
EP3024028B1 (en) | 2023-03-08 |
CN102884627B (zh) | 2015-12-16 |
US20110248374A1 (en) | 2011-10-13 |
JP2013529295A (ja) | 2013-07-18 |
EP2559067A2 (en) | 2013-02-20 |
IL222342A (en) | 2016-10-31 |
HK1176745A1 (zh) | 2013-08-02 |
CN102884627A (zh) | 2013-01-16 |
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