CN105261622B - 一种成像探测器的制造方法 - Google Patents
一种成像探测器的制造方法 Download PDFInfo
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- CN105261622B CN105261622B CN201410243357.2A CN201410243357A CN105261622B CN 105261622 B CN105261622 B CN 105261622B CN 201410243357 A CN201410243357 A CN 201410243357A CN 105261622 B CN105261622 B CN 105261622B
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000003384 imaging method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 239000011148 porous material Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 29
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 34
- 239000004642 Polyimide Substances 0.000 claims 1
- 239000012790 adhesive layer Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 11
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000002194 amorphous carbon material Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910006990 Si1-xGex Inorganic materials 0.000 description 1
- 229910007020 Si1−xGex Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Micromachines (AREA)
Abstract
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CN201410243357.2A CN105261622B (zh) | 2014-06-03 | 2014-06-03 | 一种成像探测器的制造方法 |
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CN105261622A CN105261622A (zh) | 2016-01-20 |
CN105261622B true CN105261622B (zh) | 2017-12-22 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108238581A (zh) * | 2016-12-23 | 2018-07-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN113720450A (zh) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | 一种基于cmos工艺的红外探测器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101713688A (zh) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | 一种mems非制冷双波段红外探测器及其制备方法 |
CN102360120A (zh) * | 2011-09-30 | 2012-02-22 | 上海丽恒光微电子科技有限公司 | 数字微镜器件及其形成方法 |
CN202735005U (zh) * | 2012-05-31 | 2013-02-13 | 上海丽恒光微电子科技有限公司 | 压力传感器、振荡器及超声波传感器 |
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US6858514B2 (en) * | 2002-03-29 | 2005-02-22 | Sharp Laboratories Of America, Inc. | Low power flash memory cell and method |
CN101927976B (zh) * | 2009-09-30 | 2013-09-25 | 浙江大立科技股份有限公司 | 微桥结构红外探测器以及制造方法 |
WO2011130284A2 (en) * | 2010-04-12 | 2011-10-20 | Vakil, Ketan S. | Uncooled infrared detector and methods for manufacturing the same |
US8659816B2 (en) * | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
CN102354052B (zh) * | 2011-09-30 | 2013-07-10 | 上海丽恒光微电子科技有限公司 | 数字微镜器件及其形成方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101713688A (zh) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | 一种mems非制冷双波段红外探测器及其制备方法 |
CN102360120A (zh) * | 2011-09-30 | 2012-02-22 | 上海丽恒光微电子科技有限公司 | 数字微镜器件及其形成方法 |
CN202735005U (zh) * | 2012-05-31 | 2013-02-13 | 上海丽恒光微电子科技有限公司 | 压力传感器、振荡器及超声波传感器 |
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Effective date of registration: 20230608 Address after: 323000 room 307, block B, building 1, No.268 Shiniu Road, nanmingshan street, Liandu District, Lishui City, Zhejiang Province Patentee after: Zhejiang Core Microelectronics Co.,Ltd. Address before: 201203 501b, building 5, No. 3000, Longdong Avenue, Pudong New Area, Shanghai Patentee before: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. |
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Denomination of invention: A Manufacturing Method for Imaging Detectors Effective date of registration: 20230724 Granted publication date: 20171222 Pledgee: China Construction Bank Corporation Lishui Development Zone Branch Pledgor: Zhejiang Core Microelectronics Co.,Ltd. Registration number: Y2023980049558 |
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